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    Новый метод получения прозрачных проводящих пленок оксида индия (III) и оксида индия-олова / Н. П. Фадеева, С. В. Сайкова, Е. В. Пикурова [и др.] // Журн. СФУ. Химия. - 2021. - Т. 14, № 1. - С. 45-58 ; J. Sib. Fed. Univ. Chem., DOI 10.17516/1998-2836-0215. - Библиогр.: 36. - Работа выполнена при поддержке РФФИ (грант № 18-33-00504) и стипендии Президента Российской Федерации (СП-2235.2019.1). В работе использованы приборы ЦКП СФУ и Красноярского регионального центра коллективного пользования ФИЦ КНЦ СО РАН . - ISSN 1998-2836. - ISSN 2313-6049
   Перевод заглавия: А new method of obtaining transparent conducting films of indium (III) oxide and indium-tin oxide

РУБ Chemistry, Multidisciplinary
Рубрики:
ITO THIN-FILMS
ELECTRICAL-PROPERTIES
DEPOSITION
Кл.слова (ненормированные):
пленки -- оксид индия -- оксид индия-олова -- анионообменный синтез -- films -- indium oxide -- indium tin oxide -- anion resin exchange synthesis
Аннотация: В работе получены седиментационно устойчивые золи гидроксидов индия (III) и олова (IV) методом анионообменного синтеза, заключающимся в обменной реакции между ОН‑ионами анионообменной смолы и анионами металлосодержащих растворов. Синтезированные гидрозоли использованы для получения проводящих пленок оксида индия (III) In2O3 и оксида индия, легированного оловом In2O3:Sn, с поверхностным сопротивлением 4 кОм/кв, толщинами 200–500 нм и прозрачностью более 85 %. Подобраны режимы нанесения прекурсоров на стеклянные подложки модифицированным спрей-методом и методом центрифугирования. Пленки исследованы с помощью РФА, СЭМ, оптической микроскопии и спектрофотометрии.
In the work, sedimentation-stable sols of indium (III) and tin (IV) hydroxides were obtained by the Anion Resin Exchange Precipitation, which consists of the exchange reaction between the OH ions of the anion exchange resin and the anions of metal-containing solutions. The synthesized hydrosols were used to obtain conducting films of indium (III) In2O3 oxide and indium oxide doped with Tin In2O3: Sn, with a surface resistance of 4 kOhm/sq, thicknesses of 200-500 urn and a transparency of more than 85 %. The modes of applying precursors to glass substrates by the modified spray method and centrifugation method are selected. Films were studied using XRD, SEM, optical microscopy and spectrophotometry.

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Институт химии и химической технологии ФИЦ КНЦ СО РАН Российская Федерация, Красноярск
Сибирский федеральный университет Российская Федерация, Красноярск
ФИЦ «Красноярский научный центр СО РАН» Российская Федерация, Красноярск
Институт физики им. Л. В. Киренского ФИЦ КНЦ СО РАН Российская Федерация, Красноярск

Доп.точки доступа:
Фадеева, Н. П.; Сайкова, С. В.; Пикурова, Е. В.; Воронин, А. С.; Фадеев, Ю. В.; Самойло, А. С.; Тамбасов, Игорь Анатольевич; Tambasov, I. A.

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    Weak localization and size effects in thin In2O3 films prepared by autowave oxidation / I. A. Tambasov [et al.] // Physica E. - 2016. - Vol. 84. - P. 162-167, DOI 10.1016/j.physe.2016.06.005. - Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS. . - ISSN 1386-9477. - ISSN 1873-1759
   Перевод заглавия: Слабая локализация и размерные эффекты в тонких пленках In2O3 приготовленные автоволновым окислением

РУБ Nanoscience & Nanotechnology + Physics, Condensed Matter
Рубрики:
SOLID-STATE SYNTHESIS
   INDIUM TIN OXIDE
   DOPED ZNO FILMS
   OPTICAL-PROPERTIES
   MAGNETIC-FIELD
   NEGATIVE MAGNETORESISTANCE
   CARBON NANOTUBES
   TEMPERATURE
   SEMICONDUCTOR
   TRANSPORT
Кл.слова (ненормированные):
Thin indium oxide films -- Weak localization -- Electron-electron -- interaction -- Disordered semiconductors -- Nanostructured films -- Phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Svobodny Prospect 79, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk Worker 31, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Tambasova, E. V.; Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
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Bikbaev, R. G.
Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons / R. G. Bikbaev, S. Ya Vetrov, I. V. Timofeev // J. Opt. Soc. Am. B. - 2019. - Vol. 36, Is. 10. - P. 2817-2823, DOI 10.1364/JOSAB.36.002817. - Cited References: 44. - The reported study was funded by RFBR according to the research project No 18-32-00053 and financial support RFBR and MOST according to the research project No 19-52-52006. . - ISSN 0740-3224
Кл.слова (ненормированные):
Aluminum oxide -- II-VI semiconductors -- Indium compounds -- Infrared devices -- Optical films -- Phonons -- Photons -- Plasmons -- Q factor measurement -- Tin oxides -- Transfer matrix method -- Transparent conducting oxides -- Zinc oxide
Аннотация: We demonstrate the possibility of using transparent conducting oxides [aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium tin oxide (ITO)] to form Tamm plasmon polaritons in the near-infrared spectral range where the permittivity of oxides is near zero. The spectral properties of the structures are investigated in the framework of the temporal coupled-mode theory and confirmed by the transfer matrix method. It is found that in the critical coupling conditions, the maximal Q-factor of a Tamm plasmon polariton is achieved when a photonic crystal is conjugated with the AZO film, while at the conjugation with the ITO films, the broadest spectral line is obtained. The sensitivity of the wavelength and spectral width of the Tamm plasmon polariton to changes in the oxide film thickness, bulk concentration of a dopant, and angle of incidence is demonstrated.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Vetrov, S. Ya.; Ветров, Степан Яковлевич; Timofeev, I. V.; Тимофеев, Иван Владимирович; Бикбаев, Рашид Гельмединович
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Transparent conductive ITO coatings obtained by pyrolysis of metal extracts / T. N. Patrusheva [et al.] // J. Appl. Chem. Sci. Int. - 2015. - Vol. 3, Is. 1. - P. 21-28 . - ISSN 2395-3705
Кл.слова (ненормированные):
Indium-tin oxide -- thin films -- extraction-pyrolysis technique -- liquid precursors -- nanocrystalline structure
Аннотация: Thin films of indium-tin oxide (ITO) have been prepared by pyrolysis of liquid organic-extracts of indium and tin. The films were deposited on glass substrate in the atmospheric condition. Extraction-pyrolytic method adopted here uses cheap starting materials and provides the required stoichiometric ratio by mixing the stable liquid precursors in appropriate concentration. Thermal decomposition processes are induced in the narrow temperature range of 350–400°C. The zirconium-yttrium oxide (ZYO) sublayer was deposited on glass substrate in advance to provide homo epitaxial growth. This would induce reduction in intrinsic stress of the films due to matching in thermal expansion coefficient with ITO film. XPS studies showed the absence of impurity elements in these extraction-pyrolytic technique derived ITO films and the spectra is quite similar to that for ITO films deposited in vacuum environment. ITO film has a nanocrystalline structure with grain size of about 6 nm.

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Patrusheva, T. N.; Патрушева, Тамара Николаевна; Snezhko, N. Yu.; Belousov, A. L.; Rizhenkov, A. V.; Mikhlin, Y. L.; Михлин, Юрий Леонидович; Kirik, S. D.; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Zharkov, S. M.; Жарков, Сергей Михайлович; Romanov, A. A.
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Tin-based high-temperature superconductor / K. S. Aleksandrov [et al.] // JETP Letters. - 1989. - Vol. 49, Is. 12. - P. 756-758. - Cited References: 8 . - ISSN 0021-3640

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Публикация на русском языке Высокотемпературный сверхпроводник на основе олова [Текст] / К. С. Александров [и др.] // Письма в Журн. эксперим. и теор. физ. - 1989. - Т. 49 Вып. 12. - С. 658-660

Доп.точки доступа:
Aleksandrov, K. S.; Александров, Кирилл Сергеевич; Vasiliev, A. D.; Васильев, Александр Дмитриевич; Zvegintsev, S. A.; Звегинцев, Сергей Анатольевич; Krivomazov, S. N.; Petrov, M. I.; Петров, Михаил Иванович; Khrustalev, B. P.; Хрусталев, Борис Петрович
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The Fermi surface and the role of electronic correlations in Sm2-xCexCuO4 / M. M. Korshunov [et al.] // J. Phys.: Condens. Matter. - 2010. - Vol. 22, Is. 1. - Ст. 15701, DOI 10.1088/0953-8984/22/1/015701. - Cited References: 35. - We would like to thank A A Kordyuk and I Eremin for useful discussions. The authors acknowledge support from RFBR (grants 08-02-00021, 10-02-00662, 08-02-91200 and 07-02-00226), the RAS programs on 'Low temperature quantum phenomena', 'Quantum physics of condensed matter' and 'Strongly correlated electrons solids', President of Russia (grants MK-614.2009.2 (IN) and MK-3227.2008.2 (ZP)), Scientific School (grant SS-1929.2008.2), Interdisciplinary UB-SB RAS project, Dynasty Foundation (ZP) and Russian Science Support Foundation (IN). . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
T-C SUPERCONDUCTOR
   IN-GAP STATES
   SPIN CORRELATIONS
   BAND
   LA2-XSRXCUO4
   EXCITATIONS
   TRANSITION
   EVOLUTION
   SM2CUO4
   OXIDES
Кл.слова (ненормированные):
Antiferromagnetics -- Doping evolution -- Electron-doped -- Electronic correlation -- Emery model -- Experimental data -- Generalized tight bindings -- High-T -- Hybrid scheme -- Magnetic orders -- Spin-liquid -- Tight binding model -- Two-regime -- Antiferromagnetism -- Cerium -- Cerium compounds -- Copper oxides -- Corundum -- Doping (additives) -- Fermi surface -- Fermions -- Tin -- Surfaces
Аннотация: Using a LDA + GTB (local density approximation + generalized tight-binding) hybrid scheme we investigate the band structure of the electron-doped high-T-c material Sm2-xCexCuO4. Parameters of the minimal tight-binding model for this system (the so-called three-band Emery model) were obtained within the NMTO (Nth-order muffin-tin orbital) method. The doping evolution of the dispersion and the Fermi surface in the presence of electronic correlations was investigated in two regimes of magnetic order: short-range (spin-liquid) and long-range (antiferromagnetic metal). Each regime is characterized by the specific topologies of the Fermi surfaces and we discuss their relation to recent experimental data.

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Держатели документа:
[Korshunov, M. M.] Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany
[Korshunov, M. M.
Zakharova, E. V.
Ovchinnikov, S. G.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Nekrasov, I. A.] Russian Acad Sci, Inst Electrophys, Ekaterinburg 620016, Russia
[Pchelkina, Z. V.] Russian Acad Sci, Inst Met Phys, Ekaterinburg 620219, Russia
[Ovchinnikov, S. G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Max-Planck-Institut fur Physik Komplexer Systeme, D-01187 Dresden, Germany
L v Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Institute for Electrophysics, Russian Academy of Sciences, Ekaterinburg 620016, Russian Federation
Institute for Metal Physics, Russian Academy of Sciences, Ekaterinburg 620219, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Korshunov, M. M.; Коршунов, Максим Михайлович; Zakharova, E. V.; Nekrasov, I. A.; Pchelkina, Z. V.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
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    Synthesis, crystal structure and green luminescence in zero-dimensional tin halide (C8H14N2)2SnBr6 / B. Su, G. Song, M. S. Molokeev [et al.] // Inorg. Chem. - 2020. - Vol. 59, Is. 14. - P. 9962–9968, DOI 10.1021/acs.inorgchem.0c01103. - Cited References: 33. - This work is supported by the National Natural Science Foundation of China (51961145101, 51722202, and 51972118), Fundamental Research Funds for the Central Universities (D2190980), Guangzhou Science & Technology Project (202007020005), and the Guangdong Provincial Science & Technology Project (No. 2018A050506004), and the Local Innovative and Research Teams Project of Guangdong Pearl River Talents Program (2017BT01X137). This work is also funded by RFBR according to Research Project No. 19-52-80003 . - ISSN 0020-1669
   Перевод заглавия: Синтез, кристаллическая структура и зеленая люминесценция в нульмерном галогениде олова (C8H14N2)2SnBr6
Аннотация: Organic-inorganic hybrid metal halides with broad-band emission are currently receiving an increasing interest for their unique light emission properties. Here we report a novel lead-free zero-dimensional (0D) tin halide, (C8H14N2)2SnBr6, in which isolated [SnBr6]4- octahedrons are cocrystallized with organic cations, 1,3-bis(aminomethyl)benzene (C8H14N22+). Upon photoexcitation, the bulk crystals exhibit broad-band green emission peaking at 507 nm with a full width at half-maximum (fwhm) of 82 nm (0.395 eV), a Stokes shift of 157 nm (1.09 eV), and a photoluminescence quantum yield (PLQY) of 36 ± 4%. Combined structural analysis and density functional theory (DFT) calculations indicate that the excited state structural distortion of [SnBr6]4- octahedral units account for the formation of this green emission. The relatively small Stokes shift and narrow fwhm of the emission are hence caused by the reduced distortion of [SnBr6]4- octahedrons and rigid molecular structure. The discovery of lead-free (C8H14N2)2SnBr6 and insight into the mechanism of green emission provide an essential platform toward unveiling the relationship between structure and property for 0D metal halide perovskites.

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Держатели документа:
State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, School of Materials Science and Technology, South China University of Technology, Guangzhou, 510640, China
Technical Institute of Physics and Chemistry, University of Chinese Academy of Sciences, Beijing, 100190, China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation

Доп.точки доступа:
Su, B.; Song, G.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Lin, Z.; Xia, Z.
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Superconductivity near liquid nitrogen temperature in the Sn-Ba-Sr-Y-Cu-O system / K. S. Aleksandrov [et al.] // Physica C-Superconductivity and its Applications. - 1989. - Vol. 161, Is. 4. - P. 493-496, DOI 10.1016/0921-4534(89)90087-7 . - ISSN 0921-4534
Кл.слова (ненормированные):
Ceramic Materials -- Tin Compounds -- Bulk Superconductivity -- High Temperature Superconductors -- Oxide Superconductors -- Tin Barium Strontium Yttrium Copper Oxide -- Superconducting Materials
Аннотация: A high-Tc phase was found in the Sn-Ba-Sr-Y-Cu-O system. DC susceptibility data of Sn2Ba2Sr0.5Y0.5Cu3Ox show a single transition to bulk superconductivity with an onset temperature of 86 K. В© 1989.

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Доп.точки доступа:
Aleksandrov, K. S.; Александров, Кирилл Сергеевич; Khrustalev, B. P.; Хрусталев, Борис Петрович; Krivomazov, S. N.; Петров, Михаил Иванович; Petrov, M. I.; Vasilyev, A. D.; Zwegintsev, S. A.
}
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Structural, optical, and electronic properties of Cu-doped TiNxOy grown by ammonothermal atomic layer deposition / F. A. Baron, Y. L. Mikhlin, M. S. Molokeev [et al.] // ACS Appl. Mater. Interfaces. - 2021. - Vol. 13, Is. 27. - P. 32531-32541, DOI 10.1021/acsami.1c08036. - Cited References: 69. - This research was funded by the RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (project code 20-42-240013) and by the grant of the Government of the Russian Federation for Creation of World Tier Laboratories (contract no. 075-15-2019-1886) . - ISSN 1944-8244. - ISSN 1944-8252

РУБ Nanoscience & Nanotechnology + Materials Science, Multidisciplinary
Рубрики:
OXYNITRIDE THIN-FILMS
TITANIUM-NITRIDE
CONFORMAL TIN
Кл.слова (ненормированные):
atomic layer deposition -- titanium oxynitride -- copper doping -- surface segregation -- thin film
Аннотация: Copper-doped titanium oxynitride (TiNxOy) thin films were grown by atomic layer deposition (ALD) using the TiCl4 precursor, NH3, and O2 at 420 °C. Forming gas was used to reduce the background oxygen concentration and to transfer the copper atoms in an ALD chamber prior to the growth initiation of Cu-doped TiNxOy. Such forming gas-mediated Cu-doping of TiNxOy films had a pronounced effect on their resistivity, which dropped from 484 ± 8 to 202 ± 4 μΩ cm, and also on the resistance temperature coefficient (TCR), which decreased from 1000 to 150 ppm °C–1. We explored physical mechanisms causing this reduction by performing comparative analysis of atomic force microscopy, X-ray photoemission spectroscopy, X-ray diffraction, optical spectra, low-temperature transport, and Hall measurement data for the samples grown with and without forming gas doping. The difference in the oxygen concentration between the films did not exceed 6%. Copper segregated to the TiNxOy surface where its concentration reached 0.72%, but its penetration depth was less than 10 nm. Pronounced effects of the copper doping by forming gas included the TiNxOy film crystallite average size decrease from 57–59 to 32–34 nm, considerably finer surface granularity, electron concentration increase from 2.2(3) × 1022 to 3.5(1) × 1022 cm–3, and the electron mobility improvement from 0.56(4) to 0.92(2) cm2 V–1 s–1. The DC resistivity versus temperature R(T) measurements from 4.2 to 300 K showed a Cu-induced phase transition from a disordered to semimetallic state. The resistivity of Cu-doped TiNxOy films decreased with the temperature increase at low temperatures and reached the minimum near T = 50 K revealing signatures of the quantum interference effects similar to 2D Cu thin films, and then, semimetallic behavior was observed at higher temperatures. In TiNxOy films grown without forming gas, the resistivity decreased with the temperature increase as R(T) = – 1.88T0.6 + 604 μΩ cm with no semimetallic behavior observed. The medium range resistivity and low TCR of Cu-doped TiNxOy make this material an attractive choice for improved matching resistors in RF analog circuits and Si complementary metal–oxide–semiconductor integrated circuits.

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Держатели документа:
KSC SB RAS, Inst Chem & Chem Technol, Fed Res Ctr, Krasnoyarsk 660036, Russia.
KSC SB RAS, Kirensky Inst Phys, Fed Res Ctr, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia.

Доп.точки доступа:
Baron, F. A.; Барон, Филипп Алексеевич; Mikhlin, Yurii L.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Rautskiy, M. V.; Рауцкий, Михаил Владимирович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Shanidze, L. V.; Шанидзе, Лев Викторович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Konovalov, Stepan O.; Zelenov, Fyodor, V; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation of World Tier Laboratories [075-15-2019-1886]
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10.

DROKIN, N. A.
PHOTOCONDUCTIVITY IN TIN-DOPED MAGNETITE / N. A. DROKIN, E. Y. AKSENOVA, Y. A. MAMALUI // Fiz. Tverd. Tela. - 1984. - Vol. 26, Is. 6. - P. 1837-1838. - Cited References: 5 . - ISSN 0367-3294

РУБ Physics, Condensed Matter

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Доп.точки доступа:
AKSENOVA, E. Y.; MAMALUI, Y. A.
}
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