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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Фадеева Н. П., Сайкова С. В., Пикурова Е. В., Воронин А. С., Фадеев Ю. В., Самойло А. С., Тамбасов, Игорь Анатольевич
Заглавие : Новый метод получения прозрачных проводящих пленок оксида индия (III) и оксида индия-олова
Место публикации : Журн. СФУ. Химия. - 2021. - Т. 14, № 1. - С. 45-58. - ISSN 1998-2836, DOI 10.17516/1998-2836-0215; J. Sib. Fed. Univ. Chem. - ISSN 2313-6049(eISSN)
Примечания : Библиогр.: 36. - Работа выполнена при поддержке РФФИ (грант № 18-33-00504) и стипендии Президента Российской Федерации (СП-2235.2019.1). В работе использованы приборы ЦКП СФУ и Красноярского регионального центра коллективного пользования ФИЦ КНЦ СО РАН
Предметные рубрики: ITO THIN-FILMS
ELECTRICAL-PROPERTIES
DEPOSITION
Аннотация: В работе получены седиментационно устойчивые золи гидроксидов индия (III) и олова (IV) методом анионообменного синтеза, заключающимся в обменной реакции между ОН‑ионами анионообменной смолы и анионами металлосодержащих растворов. Синтезированные гидрозоли использованы для получения проводящих пленок оксида индия (III) In2O3 и оксида индия, легированного оловом In2O3:Sn, с поверхностным сопротивлением 4 кОм/кв, толщинами 200–500 нм и прозрачностью более 85 %. Подобраны режимы нанесения прекурсоров на стеклянные подложки модифицированным спрей-методом и методом центрифугирования. Пленки исследованы с помощью РФА, СЭМ, оптической микроскопии и спектрофотометрии.In the work, sedimentation-stable sols of indium (III) and tin (IV) hydroxides were obtained by the Anion Resin Exchange Precipitation, which consists of the exchange reaction between the OH ions of the anion exchange resin and the anions of metal-containing solutions. The synthesized hydrosols were used to obtain conducting films of indium (III) In2O3 oxide and indium oxide doped with Tin In2O3: Sn, with a surface resistance of 4 kOhm/sq, thicknesses of 200-500 urn and a transparency of more than 85 %. The modes of applying precursors to glass substrates by the modified spray method and centrifugation method are selected. Films were studied using XRD, SEM, optical microscopy and spectrophotometry.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bikbaev R. G., Vetrov S. Ya., Timofeev I. V.
Заглавие : Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons
Место публикации : J. Opt. Soc. Am. B. - 2019. - Vol. 36, Is. 10. - P.2817-2823. - ISSN 07403224 (ISSN), DOI 10.1364/JOSAB.36.002817
Примечания : Cited References: 44. - The reported study was funded by RFBR according to the research project No 18-32-00053 and financial support RFBR and MOST according to the research project No 19-52-52006.
Аннотация: We demonstrate the possibility of using transparent conducting oxides [aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium tin oxide (ITO)] to form Tamm plasmon polaritons in the near-infrared spectral range where the permittivity of oxides is near zero. The spectral properties of the structures are investigated in the framework of the temporal coupled-mode theory and confirmed by the transfer matrix method. It is found that in the critical coupling conditions, the maximal Q-factor of a Tamm plasmon polariton is achieved when a photonic crystal is conjugated with the AZO film, while at the conjugation with the ITO films, the broadest spectral line is obtained. The sensitivity of the wavelength and spectral width of the Tamm plasmon polariton to changes in the oxide film thickness, bulk concentration of a dopant, and angle of incidence is demonstrated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrusheva T. N., Snezhko N. Yu., Belousov A. L., Rizhenkov A. V., Mikhlin Y. L., Kirik S. D., Bondarenko G. N., Zharkov S. M., Romanov A. A.
Заглавие : Transparent conductive ITO coatings obtained by pyrolysis of metal extracts
Место публикации : J. Appl. Chem. Sci. Int. - 2015. - Vol. 3, Is. 1. - P.21-28. - ISSN 2395-3705
Ключевые слова (''Своб.индексиров.''): indium-tin oxide--thin films--extraction-pyrolysis technique--liquid precursors--nanocrystalline structure
Аннотация: Thin films of indium-tin oxide (ITO) have been prepared by pyrolysis of liquid organic-extracts of indium and tin. The films were deposited on glass substrate in the atmospheric condition. Extraction-pyrolytic method adopted here uses cheap starting materials and provides the required stoichiometric ratio by mixing the stable liquid precursors in appropriate concentration. Thermal decomposition processes are induced in the narrow temperature range of 350–400°C. The zirconium-yttrium oxide (ZYO) sublayer was deposited on glass substrate in advance to provide homo epitaxial growth. This would induce reduction in intrinsic stress of the films due to matching in thermal expansion coefficient with ITO film. XPS studies showed the absence of impurity elements in these extraction-pyrolytic technique derived ITO films and the spectra is quite similar to that for ITO films deposited in vacuum environment. ITO film has a nanocrystalline structure with grain size of about 6 nm.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aleksandrov K. S., Vasiliev A. D., Zvegintsev S. A., Krivomazov S. N., Petrov M. I., Khrustalev B. P.
Заглавие : Tin-based high-temperature superconductor
Место публикации : JETP Letters. - 1989. - Vol. 49, Is. 12. - P.756-758. - ISSN 0021-3640
Примечания : Cited References: 8
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Korshunov M. M., Zakharova E. V., Nekrasov I. A., Pchelkina Z. V., Ovchinnikov S. G.
Заглавие : The Fermi surface and the role of electronic correlations in Sm2-xCexCuO4
Коллективы :
Разночтения заглавия :авие SCOPUS: The Fermi surface and the role of electronic correlations in Sm 2-xCexCuO4
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 2010. - Vol. 22, Is. 1. - Ст.15701. - ISSN 0953-8984, DOI 10.1088/0953-8984/22/1/015701
Примечания : Cited References: 35. - We would like to thank A A Kordyuk and I Eremin for useful discussions. The authors acknowledge support from RFBR (grants 08-02-00021, 10-02-00662, 08-02-91200 and 07-02-00226), the RAS programs on 'Low temperature quantum phenomena', 'Quantum physics of condensed matter' and 'Strongly correlated electrons solids', President of Russia (grants MK-614.2009.2 (IN) and MK-3227.2008.2 (ZP)), Scientific School (grant SS-1929.2008.2), Interdisciplinary UB-SB RAS project, Dynasty Foundation (ZP) and Russian Science Support Foundation (IN).
Предметные рубрики: T-C SUPERCONDUCTOR
IN-GAP STATES
SPIN CORRELATIONS
BAND
LA2-XSRXCUO4
EXCITATIONS
TRANSITION
EVOLUTION
SM2CUO4
OXIDES
Ключевые слова (''Своб.индексиров.''): antiferromagnetics--doping evolution--electron-doped--electronic correlation--emery model--experimental data--generalized tight bindings--high-t--hybrid scheme--magnetic orders--spin-liquid--tight binding model--two-regime--antiferromagnetism--cerium--cerium compounds--copper oxides--corundum--doping (additives)--fermi surface--fermions--tin--surfaces
Аннотация: Using a LDA + GTB (local density approximation + generalized tight-binding) hybrid scheme we investigate the band structure of the electron-doped high-T-c material Sm2-xCexCuO4. Parameters of the minimal tight-binding model for this system (the so-called three-band Emery model) were obtained within the NMTO (Nth-order muffin-tin orbital) method. The doping evolution of the dispersion and the Fermi surface in the presence of electronic correlations was investigated in two regimes of magnetic order: short-range (spin-liquid) and long-range (antiferromagnetic metal). Each regime is characterized by the specific topologies of the Fermi surfaces and we discuss their relation to recent experimental data.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Su B., Song G., Molokeev M. S., Lin Z., Xia Z.
Заглавие : Synthesis, crystal structure and green luminescence in zero-dimensional tin halide (C8H14N2)2SnBr6
Место публикации : Inorg. Chem. - 2020. - Vol. 59, Is. 14. - P.9962–9968. - ISSN 00201669 (ISSN), DOI 10.1021/acs.inorgchem.0c01103
Примечания : Cited References: 33. - This work is supported by the National Natural Science Foundation of China (51961145101, 51722202, and 51972118), Fundamental Research Funds for the Central Universities (D2190980), Guangzhou Science & Technology Project (202007020005), and the Guangdong Provincial Science & Technology Project (No. 2018A050506004), and the Local Innovative and Research Teams Project of Guangdong Pearl River Talents Program (2017BT01X137). This work is also funded by RFBR according to Research Project No. 19-52-80003
Аннотация: Organic-inorganic hybrid metal halides with broad-band emission are currently receiving an increasing interest for their unique light emission properties. Here we report a novel lead-free zero-dimensional (0D) tin halide, (C8H14N2)2SnBr6, in which isolated [SnBr6]4- octahedrons are cocrystallized with organic cations, 1,3-bis(aminomethyl)benzene (C8H14N22+). Upon photoexcitation, the bulk crystals exhibit broad-band green emission peaking at 507 nm with a full width at half-maximum (fwhm) of 82 nm (0.395 eV), a Stokes shift of 157 nm (1.09 eV), and a photoluminescence quantum yield (PLQY) of 36 ± 4%. Combined structural analysis and density functional theory (DFT) calculations indicate that the excited state structural distortion of [SnBr6]4- octahedral units account for the formation of this green emission. The relatively small Stokes shift and narrow fwhm of the emission are hence caused by the reduced distortion of [SnBr6]4- octahedrons and rigid molecular structure. The discovery of lead-free (C8H14N2)2SnBr6 and insight into the mechanism of green emission provide an essential platform toward unveiling the relationship between structure and property for 0D metal halide perovskites.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aleksandrov K. S., Khrustalev B. P., Krivomazov S. N., Петров, Михаил Иванович, Vasilyev A. D., Zwegintsev S. A.
Заглавие : Superconductivity near liquid nitrogen temperature in the Sn-Ba-Sr-Y-Cu-O system
Место публикации : Physica C-Superconductivity and its Applications. - 1989. - Vol. 161, Is. 4. - P.493-496. - ISSN 0921-4534, DOI 10.1016/0921-4534(89)90087-7
Ключевые слова (''Своб.индексиров.''): ceramic materials--tin compounds--bulk superconductivity--high temperature superconductors--oxide superconductors--tin barium strontium yttrium copper oxide--superconducting materials
Аннотация: A high-Tc phase was found in the Sn-Ba-Sr-Y-Cu-O system. DC susceptibility data of Sn2Ba2Sr0.5Y0.5Cu3Ox show a single transition to bulk superconductivity with an onset temperature of 86 K. В© 1989.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Baron F. A., Mikhlin, Yurii L., Molokeev M. S., Rautskiy M. V., Tarasov I. A., Volochaev M. N., Shanidze L. V., Lukyanenko A. V., Smolyarova T. E., Konovalov, Stepan O., Zelenov, Fyodor, V, Tarasov A. S., Volkov N. V.
Заглавие : Structural, optical, and electronic properties of Cu-doped TiNxOy grown by ammonothermal atomic layer deposition
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-240013]; Government of the Russian Federation for Creation of World Tier Laboratories [075-15-2019-1886]
Место публикации : ACS Appl. Mater. Interfaces. - 2021. - Vol. 13, Is. 27. - P.32531-32541. - ISSN 1944-8244, DOI 10.1021/acsami.1c08036. - ISSN 1944-8252(eISSN)
Примечания : Cited References: 69. - This research was funded by the RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (project code 20-42-240013) and by the grant of the Government of the Russian Federation for Creation of World Tier Laboratories (contract no. 075-15-2019-1886)
Предметные рубрики: OXYNITRIDE THIN-FILMS
TITANIUM-NITRIDE
CONFORMAL TIN
Аннотация: Copper-doped titanium oxynitride (TiNxOy) thin films were grown by atomic layer deposition (ALD) using the TiCl4 precursor, NH3, and O2 at 420 °C. Forming gas was used to reduce the background oxygen concentration and to transfer the copper atoms in an ALD chamber prior to the growth initiation of Cu-doped TiNxOy. Such forming gas-mediated Cu-doping of TiNxOy films had a pronounced effect on their resistivity, which dropped from 484 ± 8 to 202 ± 4 μΩ cm, and also on the resistance temperature coefficient (TCR), which decreased from 1000 to 150 ppm °C–1. We explored physical mechanisms causing this reduction by performing comparative analysis of atomic force microscopy, X-ray photoemission spectroscopy, X-ray diffraction, optical spectra, low-temperature transport, and Hall measurement data for the samples grown with and without forming gas doping. The difference in the oxygen concentration between the films did not exceed 6%. Copper segregated to the TiNxOy surface where its concentration reached 0.72%, but its penetration depth was less than 10 nm. Pronounced effects of the copper doping by forming gas included the TiNxOy film crystallite average size decrease from 57–59 to 32–34 nm, considerably finer surface granularity, electron concentration increase from 2.2(3) × 1022 to 3.5(1) × 1022 cm–3, and the electron mobility improvement from 0.56(4) to 0.92(2) cm2 V–1 s–1. The DC resistivity versus temperature R(T) measurements from 4.2 to 300 K showed a Cu-induced phase transition from a disordered to semimetallic state. The resistivity of Cu-doped TiNxOy films decreased with the temperature increase at low temperatures and reached the minimum near T = 50 K revealing signatures of the quantum interference effects similar to 2D Cu thin films, and then, semimetallic behavior was observed at higher temperatures. In TiNxOy films grown without forming gas, the resistivity decreased with the temperature increase as R(T) = – 1.88T0.6 + 604 μΩ cm with no semimetallic behavior observed. The medium range resistivity and low TCR of Cu-doped TiNxOy make this material an attractive choice for improved matching resistors in RF analog circuits and Si complementary metal–oxide–semiconductor integrated circuits.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : DROKIN N. A., AKSENOVA E. Y., MAMALUI Y. A.
Заглавие : PHOTOCONDUCTIVITY IN TIN-DOPED MAGNETITE
Место публикации : Fiz. Tverd. Tela: MEZHDUNARODNAYA KNIGA, 1984. - Vol. 26, Is. 6. - P1837-1838. - ISSN 0367-3294
Примечания : Cited References: 5
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