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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tsikalov V. S., Patrin G. S., Kim P. D., Seong-Cho Y., Kim D. H., Chau N.
Заглавие : Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure
Коллективы : RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]
Место публикации : J. Phys. D. - 2009. - Vol. 42, Is. 6. - Ст.65005. - ISSN 0022-3727, DOI 10.1088/0022-3727/42/6/065005
Примечания : Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS).
Ключевые слова (''Своб.индексиров.''): colossal magnetoresistance--electric resistance--electronic structure--magnetic field effects--magnetoelectronics--manganese--manganites--oxide minerals--schottky barrier diodes--semiconductor junctions--silicides--tunnel junctions--tunnels--bottom layers--channel switching--conducting channels--conducting layers--current-driven--current-in-plane geometries--depletion layers--ferromagnetic state--layered structures--low-resistance contacts--magnetic tunnel junctions--magneto-transport properties--manganese silicides--manganite films--new mechanisms--positive magnetoresistances--positive mr--potential barriers--spin-polarized--tunnel structures--voltage-current characteristics--current voltage characteristics
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Lee C. G., Kim P. D., Eremin E. V., Patrin G. S.
Заглавие : Optically driven conductivity and magnetoresistance in a manganite-based tunnel structure
Коллективы : Russian Foundation for Basic Research [08-02-00259-a, 08-02-00397-a]; Division of Physical Sciences of the RAS; [2.4.2]
Место публикации : J. Phys. D. - 2009. - Vol. 42, Is. 20. - Ст.205009. - ISSN 0022-3727, DOI 10.1088/0022-3727/42/20/205009
Примечания : Cited References: 13. - This study was supported by the Russian Foundation for Basic Research (Projects Nos 08-02-00259-a and 08-02-00397-a) and the Division of Physical Sciences of the RAS, Programme 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of the Siberian Branch of the RAS).
Предметные рубрики: JUNCTIONS
Ключевые слова (''Своб.индексиров.''): conducting layers--current-in-plane geometry--dielectric layer--electron hole pairs--interband absorption--magnetic tunnel junction--magnetic tunnels--multilayer structures--optical radiations--photoinduced change--potential barriers--radiation power density--threshold characters--tunnel structures--electric resistance--lanthanum--light--magnetic field effects--magnetoelectronics--magnetoresistance--manganese compounds--oxide minerals--photovoltaic effects--semiconductor junctions--transport properties--vehicular tunnels--wind tunnels--tunnel junctions
Аннотация: In the multilayer structure, La(0.7)Sr(0.3)MnO(3)/depleted manganite layer/MnSi, the photovoltaic effect has been discovered. The depleted manganite layer in the structure is dielectric and serves as a potential barrier between the ferromagnetic conducting La(0.7)Sr(0.3)MnO(3) and MnSi layers by the formation of a magnetic tunnel junction. The photoinduced changes in the transport properties of the magnetic tunnel structure have been observed in the current-in-plane geometry. The changes are reversible and saturate at radiation power densities over 30 mW cm(-2). The photovoltaic effect has a threshold character: it reveals only at h nu 1.17 eV. Most likely, the effect of optical radiation is related to the formation of electron-hole pairs due to interband absorption of light in the dielectric layer. A photocurrent through the tunnel junctions separating the conducting layers causes a redistribution of the current channels between the conducting layers, which influences the conductivity and the magnetoresistance of the structure.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Rautskii M. V., Eremin E. V., Patrin G. S., Kim P. D., Lee C. G.
Заглавие : Response of a manganite-based magnetic tunnel structure to microwave radiation
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.125-128. - ISBN 978, DOI 10.4028/www.scientific.net/SSP.190.125. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): magnetic tunnel structure--microwave detection effect--spintronics--current flowing--current-in-plane geometry--magnetic tunnels--magnetization dynamics--microwave detection--non-linearity--rectification effects--spin-polarized currents--voltage signals--magnetic materials--magnetoelectronics--manganese oxide--microwaves--magnetism
Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a significant voltage signal due to the rectification effect. The measurements were carried out using current-in-plane geometry with a current flowing parallel to the interfaces in the structure. A value of the microwave-induced voltage strongly depends on a bias current and can be driven by a magnetic field. The rectification effect is discussed both in "Classical" terms of nonlinearity of the current-voltage characteristic and using a mechanism that involves the interplay between the spinpolarized current and magnetization dynamics in the magnetic tunnel structure. В© (2012) Trans Tech Publications.
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