Библиотека института физики им. Л.В. Киренского СО РАН

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Каталог книг и брошюр библиотеки ИФ СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volova T. G., Kiselev E. G., Shishatskaya E. I., Zhila N. O., Boyandin A. N., Syrvacheva D. A., Vinogradova O. N., Kalacheva G. S., Vasiliev A. D., Peterson I. V.
Заглавие : Cell growth and accumulation of polyhydroxyalkanoates from CO2 and H2 of a hydrogen-oxidizing bacterium, Cupriavidus eutrophus B-10646
Место публикации : Bioresource Technol. - 2013. - Vol. 146. - P.215-222. - ISSN 0960-8524, DOI 10.1016/j.biortech.2013.07.070
Ключевые слова (''Своб.индексиров.''): autotrophic synthesis--cupriavidus eutrophus--polyhydroxyalkanoates
Аннотация: Synthesis of polyhydroxyalkanoates (PHAs) by a new strain of Cupriavidus - Cupriavidus eutrophus B-10646 - was investigated under autotrophic growth conditions. Under chemostat, at the specific flow rate D=0.1h-1, on sole carbon substrate (CO2), with nitrogen, sulfur, phosphorus, potassium, and manganese used as growth limiting elements, the highest poly(3-hydroxybutyrate) [P(3HB)] yields were obtained under nitrogen deficiency. In batch autotrophic culture, in the fermenter with oxygen mass transfer coefficient 0.460h-1, P(3HB) yields reached 85% of dry cell weight (DCW) and DCW reached 50g/l. Concentrations of supplementary PHA precursor substrates (valerate, hexanoate, ?-butyrolactone) and culture conditions were varied to produce, for the first time under autotrophic growth conditions, PHA ter- and tetra-polymers with widely varying major fractions of 3-hydroxybutyrate, 4-hydroxybutyrate, 3-hydroxyvalerate, and 3-hydroxyhexanoate monomer units. Investigation of the high-purity PHA specimens showed significant differences in their physicochemical and physicomechanical properties. В© 2013 Elsevier Ltd.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Yakovchuk V. Y., Velikanov D. A.
Заглавие : Influence of semimetal spacer on magnetic properties in NiFe/Bi/NiFe trilayer films
Место публикации : Phys. Lett. A. - 2007. - Vol. 363, Is. 1-2. - P.164-167. - ISSN 0375-9601, DOI 10.1016/j.physleta.2006.10.088
Примечания : Cited References: 19
Предметные рубрики: BISMUTH
SYSTEM
Ключевые слова (''Своб.индексиров.''): semimetal spacer--magnetization--spin accumulation--trilayer film--magnetization--semimetal spacer--spin accumulation--trilayer film
Аннотация: The results of experimental study of magnetic properties in permalloy/bismuth/permalloy trilayer films synthesized for the first time are presented. Measurements of magnetic field and temperature dependences of magnetization have shown that the interlayer coupling depends on bismuth spacer thickness. The dependence of saturation magnetization of the system on semimetal thickness has been found. Possible mechanisms responsible for the observed features of behavior are discussed. (c) 2006 Elsevier B.V. All rights reserved.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov A. S., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Tarasov I. A., Yakovlev I. A., Ovchinnikov S. G., Volkov N. V.
Заглавие : Spin accumulation effect in fabricated planar device based on epitaxial Fe3Si/p-Si structure
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Research Institute of Agriculture and Ecology of the Arctic, Siberian Federal Univercity
Место публикации : International school/workshop on actual problems of condensed matter physics: Program. Book of abstracts/ ed. S. G. Ovchinnikov. - Norilsk, 2018. - P.24. - ISBN 978-5-904603-08-3
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Bondarev I. A., Rautskii M. V., Lukyanenko A. V., Tarasov I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Room temperature spin accumulation effect in boron doped Si created by epitaxial Fe3Si/p-Si Schottky contact
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243046, 16-42-242036, 16-42-243060]
Место публикации : J. Surf. Ingestig. - 2018. - Vol. 12, Is. 4. - P.633-637. - ISSN 1027-4510, DOI 10.1134/S1027451018040171. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 16-42-243046, 16-42-242036 and 16-42-243060.
Предметные рубрики: HYBRID STRUCTURES
CURRENT-VOLTAGE
FILMS
TRANSPORT
SILICON
Ключевые слова (''Своб.индексиров.''): spintronics--hybrid structures--schottky diode--hanle effect--spin--accumulation
Аннотация: To study spin-dependent transport phenomena in Fe3Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. IaEuro'V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe3Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe3Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Rautskii M. V., Bondarev I. A., Smolyakov D. A., Tarasov I. A., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G., Baron F. A., Volkov N. V.
Заглавие : Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [18-42-243022]; Russian Foundation for Basic Research [18-32-00035]; Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences [II.8.70]; Fundamental research program of the Presidium of the RAS [32]
Место публикации : Semicond. Sci. Technol. - 2019. - Vol. 34, Is. 3. - Ст.035024. - ISSN 0268-1242, DOI 10.1088/1361-6641/ab0327. - ISSN 1361-6641(eISSN)
Примечания : Cited References: 56. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project. 18-42-243022 and supported in part by the Russian Foundation for Basic Research by project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 "Nanostructures: physics, chemistry, biology, basics of technologies"
Предметные рубрики: ALLOYS
Ключевые слова (''Своб.индексиров.''): spin accumulation--interface states--hybrid structures--hanle effect--iron silicide
Аннотация: Spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM). Electrical characterization of a prepared Fe3Si/p-Si diode allowed the determination of possible reasons for the pronounced spin signal. Analysis of the forward bias I-V curve revealed a Schottky barrier at the Fe3Si/p-Si interface with a height of φBp = 0.57 eV. Then, using impedance spectroscopy, we observed interface states localized in the band gap of silicon with energy of E LS = 40 meV. Such states most probably cause the observed spin signal. We believe that in our experiment, spin-dependent hole extraction was performed via the interface states resulting in the minority spin accumulation in the silicon valence band. The observed effect paves the way to the development of different spintronic devices based on FM/SC structures without dielectric tunneling barriers.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Baron F. A., Ovchinnikov S. G., Jiang H.-W., Wang K. L.
Заглавие : Effects of magnetic field on the source current of deep-submicron MOSFET baised at accumulation
Коллективы : "Trends in Nanomechanics and Nanoengineering", workshop, Сибирский федеральный университет, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : Workshop "Trends in Nanomechanics and Nanoengineering": book of abstracts/ предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P.20
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Bondarev I. A., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magnetotransport phenomena and spin accumulation in MIS structures
Коллективы : International Russian-Chinese Symposium "New Materials and Technologies"
Место публикации : J. Phys.: Conf. Ser. - 2019. - Vol. 1347, Is. 1. - Ст.012006. - ISSN 1742-6588, DOI 10.1088/1742-6596/1347/1/012006. - ISSN 1742-6596 (eISSN)
Примечания : Cited References: 32. - The reported study was funded by Russian Foundation for Basic Research, project No 17-02-00302.
Аннотация: The present work is devoted to magnetic transport in Fe/SiO2/p-Si, Mn/SiO2/p-Si and Fe3Si/p-Si hybrid structure. For Mn/SiO2/p-Si diode extremely large values of magnetoresistance were observed (105 % for AC and 107 % for DC) which is explained by impact ionization process that can be suppressed by the magnetic field. Lateral photovoltaic effect in Fe/SiO2/p-Si have also shown a strong dependence on the magnetic field in low-temperature region (the relative change of photovoltage exceeded 103 %). In Fe3Si/p-Si spin accumulation was found via 3-terminal Hanle measurements. We believe that the magnetic field affects electric transport through Lorentz force and through the interface states which are localized at the insulator/semiconductor or metal/semiconductor interfaces. Such states play a decisive role in magnetotrasnport as their energy can be controlled by a magnetic field. In Fe3Si/p-Si they also participate in spin-dependent tunneling, causing spin injection from the Fe3Si film into the silicon.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Luk'yanenko A. V., Bondarev I. A., Yakovlev I. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Spin accumulation in the Fe3Si/n-Si epitaxial structure and related electric bias effect
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk krai; Krasnoyarsk Territorial Foundation [18-42-243022]; Grant of the Government of the Russian Federation for Creation of World Level Laboratories [075-15-2019-1886]
Место публикации : Tech. Phys. Lett. - 2020. - Vol. 46, Is. 7. - P.665-668. - ISSN 1063-7850, DOI 10.1134/S1063785020070135. - ISSN 1090-6533(eISSN)
Примечания : Cited References: 17. - This study was supported by the Russian Foundation for Basic Research, the Government of Krasnoyarsk krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities (project no. 18-42-243022), and a Grant of the Government of the Russian Federation for Creation of World Level Laboratories (agreement no. 075-15-2019-1886)
Предметные рубрики: TRANSPORT
Аннотация: The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Andryushchenko T. A., Lyashchenko S. A., Varnakov S. N., Ovchinnikov S. G., Shvetsov D. V., Yakovlev I. A.
Заглавие : Electron charge accumulation by island surfaces of Cr-Mn based MAX phase thin films on MgO
Коллективы : International Baltic Conference on Magnetism, Балтийский федеральный университет им. И. Канта
Место публикации : V International Baltic Conference on Magnetism. IBCM: Book of abstracts. - 2023. - P.129
Примечания : Cited References: 2. - РФН № 21-12-00226
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