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Khodenkov, S. A.
Band-pass filters based on photonic crystal / S. A. Khodenkov, I. A. Yushkov // J. Phys. Conf. Ser. - 2017. - Vol. 917, Is. 6. - Ст. 062043, DOI 10.1088/1742-6596/917/6/062043. - Cited References: 5. - This study was supported by the Ministry of Education and Science of the Russian Federation, grant МК-9119.2016.8. . - ISSN 1742-6588
Кл.слова (ненормированные):
Amplitude frequency characteristics -- Connection coefficients -- Glass substrates -- High contrast -- High frequency HF -- Periodic interchange -- Relative bandwidth -- Ultra-wideband filters
Аннотация: Multilayer photonic crystal structures with bleaching layers are being investigated. In order to calculate the characteristics of ultra-wideband filters on their basis, T-lines lossless model was used. Amplitude-frequency characteristics for the synthesized filters of 5th, 11th and 17th orders are given. It is proved that by a significant increase in filter N order, the difference between the connection coefficients of central resonators' layers' becomes negligible. This makes it possible to develop 27-order filter, in which almost half of the layers are realized by periodic interchange of only two identical high-contrast materials. The investigated band-pass filters, including the ones on a glass substrate, have high frequency-selective properties at a relative bandwidth of 80%.

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Доп.точки доступа:
Yushkov, I. A.; Юшков, И. А.; International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures(4 ; 2017 ; 3-6 April ; Saint Petersburg); Saint Petersburg OPEN, International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures(4 ; 2017 ; 3-6 Apr. ; Saint Petersburg)
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Narrow bandwidth thermal emission with Tamm plasmon polaritons / Z. -Y. Yang [et al.] // JSAP-OSA Joint Symposia : Abstracts. - 2017. PM - Plasmonics. - Ст. 5p_A410_6. - Библиогр.: 4

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Доп.точки доступа:
Yang, Z. -Y.; Ishii, S.; Yokoyama, T.; Dao, T. D.; Sun, M. -G.; Pankin, P. S.; Timofeev, I. V.; Тимофеев, Иван Владимирович; Nagao, T.; Chen, K. -P.; JSAP-OSA Joint Symposia(2017 ; 18-21 Sept. ; Fukuoka, Japan); Japan Society of Applied Physics; Optical Society of America
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Refractory titanium nitride two-dimensional structures with extremely narrow surface lattice resonances at telecommunication wavelengths / V. I. Zakomirnyi [et al.] // Appl. Phys. Lett. - 2017. - Vol. 111, Is. 12. - Ст. 123107, DOI 10.1063/1.5000726. - Cited References: 54. - This work was supported by the RF Ministry of Education and Science, the State contract with Siberian Federal University for scientific research in 2017–2019. Numerical calculations were performed using the MVS-1000M system at the Institute of Computational Modeling of the Siberian Branch of the Russian Academy of Sciences. . - ISSN 0003-6951
Кл.слова (ненормированные):
Bandwidth -- Nanoparticles -- Nanostructures -- Optical properties -- Plasmons -- Q factor measurement -- Refractory materials -- Titanium compounds -- Diffractive grating -- Electromagnetic response -- Localized surface plasmon -- Low cost fabrication -- Plasmonic nanoparticle -- Telecommunication bandwidth -- Telecommunication wavelengths -- Two-dimensional structures -- Titanium nitride
Аннотация: Regular arrays of plasmonic nanoparticles have brought significant attention over the last decade due to their ability to support localized surface plasmons (LSPs) and exhibit diffractive grating behavior simultaneously. For a specific set of parameters (i.e., period, particle shape, size, and material), it is possible to generate super-narrow surface lattice resonances (SLRs) that are caused by interference of the LSP and the grating Rayleigh anomaly. In this letter, we propose plasmonic structures based on regular 2D arrays of TiN nanodisks to generate high-Q SLRs in an important telecommunication range, which is quite difficult to achieve with conventional plasmonic materials. The position of the SLR peak can be tailored within the whole telecommunication bandwidth (from ≈ 1.26 μm to ≈ 1.62 μm) by varying the lattice period, while the Q-factor is controlled by changing nanodisk sizes. We show that the Q-factor of SLRs can reach a value of 2 × 103, which is the highest reported Q-factor for SLRs at telecommunication wavelengths so far. Tunability of optical properties, refractory behavior, and low-cost fabrication of TiN nanoparticles paves the way for manufacturing cheap nanostructures with extremely stable and adjustable electromagnetic response at telecommunication wavelengths for a large number of applications.

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Держатели документа:
Institute of Nanotechnology, Spectroscopy and Quantum Chemistry, Siberian Federal University, Krasnoyarsk, Russian Federation
Division of Theoretical Chemistry and Biology, School of Biotechnology, KTH Royal Institute of Technology, Stockholm, Sweden
Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, IL, United States
Institute of Computational Modeling, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, Russian Federation
L. V. Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Zakomirnyi, V. I.; Rasskazov, I. L.; Gerasimov, V. S.; Герасимов, Валерий Сергеевич; Ershov, A. E.; Ершов, Александр Евгеньевич; Polyutov, S. P.; Karpov, S. V.; Карпов, Сергей Васильевич
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Khodenkov, S. A.
Investigation of frequency-selective properties of microwave wideband bandpass filters / S. A. Khodenkov, N. M. Boev // J. Phys. Conf. Ser. - 2017. - Vol. 929, Is. 1. - Ст. 012025, DOI 10.1088/1742-6596/929/1/012025. - Cited References: 8. - This study was supported by the Ministry of Education and Science of the Russian Federation, grant МК-9119.2016.8 of the President of the Russian Federation for State Support of Young Russian Scientists. . - ISSN 1742-6588
Кл.слова (ненормированные):
Resonators -- Frequency-selective properties -- High frequency HF -- Microwave structures -- Multimode resonators -- Quarter wave resonators -- Relative bandwidth -- Single-mode resonators
Аннотация: A new approach allowing to improve frequency-selective properties for a fixed order of N filter is suggested. In all the studies, conducted with the help of numerical electrodynamic analysis of 3D models of microstrip filters based on a multimode resonator, the same substrate with dielectric constant ϵ=2.8 and thickness h=2 mm (material - FLAN) was used in calculations. The central bandpass frequency of microwave structures f 0≈1.4 GHz was registered and as well as relative bandwidth Δf/f o≈80%. The strip conductor of central multimode resonator in six studied filters of the sixth and eighth orders has the shape of an irregular meander being electromagnetically connected with four single-mode resonators, a pair of which is located to the left of it, and the other pair is to the right. It is shown that in single-mode quarter-wave resonators building-up the number of portions of identical parallel strip conductors, connected to a screen at one end and connected with each other by a strip conductor jumper, can increase the power of suppression at low-frequency stop band by more than 15 dB, as well as near high-frequency slope of passband by more than 10 dB. Therefore, the level of maximums of return losses in the passband of wideband bandpass filter ranges within a few dB.

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Доп.точки доступа:
Boev, N. M.; Боев, Никита Михайлович; International Conference PhysicA.SPb 2016(1 - 3 November 2016 ; Saint-Petersburg, Russian Federation)
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    Narrow bandwidth luminescence in Sr2Li(Al,Ga)O4:Eu2+ by selective site occupancy engineering for high definition displays / J. Qiao, Y. Zhou, M. S. Molokeev [et al.] // Laser Photon. Rev. - 2021. - Vol. 15, Is. 11. - Ст. 2100392, DOI 10.1002/lpor.202100392. - Cited References: 39. - J.Q. and Y.Z. contributed equally to this work. This research was supported by the National Natural Science Foundation of China (grant nos. 51972118 and 51961145101), International Cooperation Project of National Key Research and Development Program of China (2021YFE0105700), Guangzhou Science & Technology Project (202007020005), the State Key Laboratory of Luminescent Materials and Devices (Skllmd-2021-09), and the Local Innovative and Research Teams Project of Guangdong Pearl River Talents Program (2017BT01×137). This work is also funded by RFBR according to the research project no. 19-52-80003 . - ISSN 1863-8880
   Перевод заглавия: Узкополосная люминесценция в Sr2Li (Al, Ga) O4: Eu2+, полученная с помощью выборочной заселенности позиций в кристалле, для дисплеев высокой четкости
Кл.слова (ненормированные):
chemical substitution -- green-emitting phosphor -- narrow-band emission -- site engineering
Аннотация: It remains a critical challenge to develop narrow-band emitters for wide color gamut displays. Herein, it is designed by the selective site occupancy engineering and an unprecedented narrow-band green-emitting phosphor is prepared through chemical substitution. By introducing Ga3+ ions into Sr2LiAlO4:Eu2+ phosphor, the distribution of Eu2+ ions in Sr1 and Sr2 sites is effectively controlled, and only one type of luminescent centers Eu2+(Sr1) is remained in Sr2LiAl0.6Ga0.4O4:Eu2+ due to the compression effect of Sr2O8 polyhedra. Sr2LiAl0.6Ga0.4O4:Eu2+ phosphor presents an extremely narrow-band green emission centered at 512 nm with a full-width at half-maximum of only 40 nm. The wide color gamut (107% National Television System Committee) of the as-fabricated white liquid crystal displays and the vivid figures captured from the projector demonstrate the potential application of narrow-band emitter for wide-color gamut displays. This work provides the design principles of realizing narrow-band emission by selective site occupancy engineering and can set the stage for the exploring of Eu2+-activated phosphor for high definition displays.

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Держатели документа:
State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices, School of Materials Science and Engineering, South China University of Technology, Guangzhou, 510641, China
Laboratory of Crystal Physics, Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Department of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021, Russian Federation
School of Physics and Optoelectronics, South China University of Technology, Guangzhou, 510641, China

Доп.точки доступа:
Qiao, J.; Zhou, Y.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Zhang, Q.; Xia, Z.
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Investigation of microstrip ultra-wideband bandpass filters / B. A. Belyaev, S. A. Khodenkov, N. A. Shepeta [et al.] // J. Phys. Conf. Ser. - 2020. - Vol. 1488, Is. 1. - Ст. 012012DOI 10.1088/1742-6596/1488/1/012012. - Cited References: 16. - This study was supported by the Ministry of Education and Science of the Russian Federation, State assignment
Кл.слова (ненормированные):
Bandpass filters -- Bandwidth -- Control systems -- Microwave filters -- Resonators -- Thermoelectric equipment -- Ultra-wideband (UWB)
Аннотация: Ultra-wideband microwave filters with high frequency-selective properties have been developed by means of electrodynamic numerical analysis of 3D models. Microstrip structures, which are studied theoretically and experimentally, use one multimode resonator and a pair of single-mode resonators. There is fairly good agreement between the calculated data and the data taken on the experimental sample. The relative bandwidth of the manufactured microstrip filter is 60%.

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Держатели документа:
Electrodynamics and Microwave Electronics Laboratory, Kirensky Institute of Physics, 38 bld., Krasnoyarsk 50, Akademgorodok, 660036, Russian Federation
Department of Radiophysics and Special Radioelectronic Devices, Reshetnev Siberian State University of Science and Technology, 31 Krasnoyarsky Rabochy Av., Krasnoyarsk, 660037, Russian Federation
Department of Electronics and Telecommunications, Reshetnev Siberian State University of Science and Technology, 31 Krasnoyarsky Rabochy Av., Krasnoyarsk, 660037, Russian Federation

Доп.точки доступа:
Belyaev, B. A.; Беляев, Борис Афанасьевич; Khodenkov, S. A.; Shepeta, N. A.; Chyurikova, T. I.; Malyshev, D. O.; International Scientific Conference on Electronic Devices and Control Systems(20-22 November 2019 ; Tomsk, Russian Federation)
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Narrow bandwidth thermal emission with Tamm plasmon polaritons / Z. -Y. Yang [et al.] // Optics InfoBase Conference Papers : Optical Society of America, 2017. - Vol. Part F78-JSAP 2017: JSAP-OSA Joint Symposia, JSAP 2017 (18 September 2017 through 21 September 2017, ) Conference code: 138968. - Cited References: 4

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Доп.точки доступа:
Yang, Z. -Y.; Ishii, S.; Yokoyama, T.; Dao, T. D.; Sun, M. -G.; Pankin, P. S.; Timofeev, I. V.; Тимофеев, Иван Владимирович; Nagao, T.; Chen, K. -P.; JSAP-OSA Joint Symposia(2017 ; 18-21 Sept. ; Fukuoka, Japan)
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Belyaev, B. A.
An X-band magnetically tunable bandpass filter based on novel waveguide cavity resonator / B. A. Belayev, K. V. Lemberg, A. M. Serzhantov // Asia-Pacific Microwave Conference Proceedings, APMC 2016 : Institute of Electrical and Electronics Engineers Inc., 2017, DOI 10.1109/APMC.2016.7931355. - Cited References: 12
Кл.слова (ненормированные):
Bandpass filters -- Cavity resonators -- Waveguides -- Operating modes -- Relative bandwidth -- Tunable band-pass filters -- Tunable frequency -- Tunable wave-guides -- Two-pole filters -- Unloaded quality factors -- Waveguide cavity resonators -- Waveguide filters
Аннотация: This paper presents a ferrite tunable waveguide filter showing high Qu and high tunability in X-band. A new type of waveguide cavity resonator with an H102 operating mode was proposed for the creation of a low-loss, two-pole filter. The filter results in an insertion loss of 3.6-4.1 dB over the tuning range 8.74-9.63 GHz with a relative bandwidth of 0.92-0.79% and biasing magnetic field 0-600 Oe. This design demonstrates an unloaded quality factor of 380-396 over the tunable frequency range. © 2016 IEEE.

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Доп.точки доступа:
Lemberg, K. V.; Serzhantov, A. M.; Сержантов, Алексей Михайлович; Беляев, Борис Афанасьевич; Asia-Pacific Microwave Conference(2016 ; Dec. ; New Delhi)
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Vyunishev, A. M.
Theory of noncollinear frequency doubling of transform limited pulses in non-steady-state regime / A. M. Vyunishev, V. G. Arkhipkin, A. S. Chirkin // J. Opt. Soc. Am. B. - 2016. - Vol. 33, Is. 11. - P. 2308-2312, DOI 10.1364/JOSAB.33.002308. - Cited References: 22. - Council of the President of the Russian Federation (MK-2908.2015.2); Russian Foundation for Basic Research (RFBR) (15-02-03838); Krasnoyarsk Regional Fund for Science and Technical Activity Support. - The authors thank I. V. Timofeev for the fruitful discussions and theoretical support. . - ISSN 0740-3224
Кл.слова (ненормированные):
Band structure -- Frequency doublers -- Gaussian beams -- Nonlinear optics -- Phase matching -- Analytical expressions -- Frequency-doubling -- Interaction geometries -- Intersection angles -- Parametric interactions -- Phase matching conditions -- Spectral bandwidth -- Transform-limited pulse -- Harmonic generation
Аннотация: Noncollinear second-harmonic generation from two ultrashort pulses intersecting in a nonlinear medium is studied in spectral and time domains. We derive analytical expressions for the second-harmonic (SH) amplitude in crystals of finite thickness neglecting diffraction. The contribution from characteristics of the fundamental radiation and interaction geometry to the process is analyzed. In addition, refined phase-matching conditions are obtained. We find that the spectral bandwidth is determined by the intersection angle and can be enlarged. The SH pulse duration can be optimized by varying the fundamental beam size and the intersection angle. It is found that the SH beam excited by a Gaussian fundamental beam becomes elliptical. It is shown that the fundamental pulse duration can be readily characterized with single pulses by means of measuring the ellipticity of the SH beam profile. The approach developed can potentially be used to calculate parametric interactions of fundamental pulses with an arbitrary spectrum. © 2016 Optical Society of America.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Department of Photonics and Laser Technology, Siberian Federal University, Krasnoyarsk, Russian Federation
Laboratory for Nonlinear Optics and Spectroscopy, Siberian Federal University, Krasnoyarsk, Russian Federation
Faculty of Physics and International Laser Center, M.V. Lomonosov Moscow State University, Moscow, Russian Federation

Доп.точки доступа:
Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Chirkin, A. S.; Вьюнышев, Андрей Михайлович
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10.

Influence of magnetic ordering on the resistivity anisotropy of alpha-MnS single crystal / S. S. Aplesnin [et al.] // Solid State Commun. - 2004. - Vol. 129, Is. 3. - P. 195-197 ; Solid State Commun. - 2004. - Vol. 129, Is. 3. - P. 195-197, DOI 10.1016/j.ssc.2003.09.028. - Cited References: 7 . - ISSN 0038-1098. - Вариант Sopus

РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
anisotropy of resistivity -- optical gap -- D. Anisotropy of resistivity -- D. Optical gap -- Antiferromagnetism -- Band structure -- Bandwidth -- Diffractometers -- Electron transitions -- Fermi level -- Hamiltonians -- Light absorption -- Magnetic anisotropy -- Magnetization -- Single crystals -- Spectroscopic analysis -- X ray diffraction analysis -- Coulomb repulsion -- Resistivity anisotropy -- Semiconducting manganese compounds -- D. Anisotropy of resistivity -- D. Optical gap -- Antiferromagnetism -- Band structure -- Bandwidth -- Diffractometers -- Electron transitions -- Fermi level -- Hamiltonians -- Light absorption -- Magnetic anisotropy -- Magnetization -- Single crystals -- Spectroscopic analysis -- X ray diffraction analysis -- Coulomb repulsion -- Resistivity anisotropy -- Semiconducting manganese compounds
Аннотация: The resistivity and the optical absorbtion spectra of single crystal alpha-MnS are studied in the temperature range 80-300 K along two directions [100] and [111]. Strong anisotropy of the resistivity, and the shift of absorbtion spectra band edge below T < 160 K are explained in terms of model involving delocalized holes in 3d-band manganese ions interacting with localized spins by using the sd-model. (C) 2003 Elsevier Ltd. All rights reserved.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
Siberian Branch, Academcumpus, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation
Siberian Branch, Academcumpus, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Petrakovskii, G. A.; Петраковский, Герман Антонович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Abramova, G. M.; Абрамова, Галина Михайловна; Kiselev, N. I.; Romanova, O. B.; Романова, Оксана Борисовна

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