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 Найдено в других БД:Каталог книг и брошюр библиотеки ИФ СО РАН (24)Каталог журналов библиотеки ИФ СО РАН (12)
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1.

Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Kleshnina S. A., Belyaev B. A., Boev N. M., Izotov A. V., Burmitskikh A. V., Gorchakovsky A.
Заглавие : Unit for measuring the magnetic characteristics of thin ferromagnetic films
Коллективы : Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, Institute of Electrical and Electronics Engineers
Место публикации : Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2020: proceedings. - 2020. - Ст.9117609. - P.326-329. - , DOI 10.1109/USBEREIT48449.2020.9117609
Примечания : Cited References: 7. - This work was supported by the Ministry of Education and Science of 075 11 2019-054
Аннотация: Studying the properties of ferromagnetic films helps in solving the fundamental problems of the physics of magnetic phenomena and in developing the theory of ferromagnetism. Modern software and hardware, along with reliable diagnostic methods are used to research and design thin-film devices. In this regard, the development of devices and methods for measuring the magnetic characteristics of thin ferromagnetic films is an essential task. The aim of the work is to develop an unit for local measurements of the magnetic characteristics of thin ferromagnetic films, which has the ability to change the degree of locality of measurements over a wide range and has high sensitivity at the same time. The article reviews a new unit for measuring the magnetic characteristics of thin ferromagnetic films. The unit allows measuring the value and direction of the anisotropy field on a local area of the film. A block diagram and description of a new unit, as well as methods of measurements are shown in the article. The experimentally obtained distribution of the anisotropy field over the area of the studied sample of Ni 80 Fe 20 film is shown in this work. The experimental results confirm the compliance of the new unit with the declared characteristics. The unit can be used for non-destructive quality control and for measuring uniformity of thin ferromagnetic films magnetic characteristics.
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2.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Udod L. V., Sitnikov M. N., Romanova O. B.
Заглавие : Dielectric and transport properties, electric polarization at the sequential structural phase transitions in iron-substituted bismuth pyrostannate
Место публикации : Ceram. Int. - 2021. - Vol. 47, Is. 2. - P.1704-1711. - ISSN 02728842 (ISSN), DOI 10.1016/j.ceramint.2020.08.287
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research project № 20-52-00005 Bel_a
Аннотация: The electrical characteristics including the electrical resistance, impedance, I–V characteristics, capacitance, dissipation factor, and thermoelectric power of the Bi2Sn2-хFeхO7 (х = 0.1, 0.2) stannates have been investigated in the temperature range of 100–600 K at frequencies of 102–106 Hz. The paramagnetic contribution of electrons to the dynamic magnetic susceptibility has been established. The conductivity mechanism of the compounds has been found from the I–V characteristics and the change in the carrier sign has been determined from the thermoelectric power. The hysteresis of the I–V curves, charge transfer currents and polarization current have been observed in the Bi2Sn1·8Fe0·2O7 compound. A nonlinear field dependence of the polarization in the orthorhombic phase has been found. The correlation between the obtained characteristics and the phase structure transitions has been established. Two relaxation channels and activation energy have been found using the Debye model. The hysteretic I–V characteristics have been explained using a model of the electronic structure and the dipole and migration polarization.
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3.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Drokin N. A., Kiiko V. S., Pavlov A. V., Malkin A. I.
Заглавие : BT-30 Ceramic Electrophysical Properties
Место публикации : Refract. Ind. Ceram. - 2020. - Vol. 61, Is. 3. - P.341-348. - ISSN 1083-4877 (ISSN), DOI 10.1007/s11148-020-00484-2. - ISSN 1573-9139 (eISSN)
Примечания : Cited References: 12
Аннотация: A total complex resistance (impedance) method is used to study the electrophysical characteristics of (BeO + TiO2)-ceramics modified with TiO2 micro- and nanoparticles in an amount of 30 wt.% (BT-30). Dispersion of the actual ε′ and imaginary ε′′ components of the dielectric permittivity component and specific conductivity in the frequency range from 100 Hz to 100 MHz from room temperature to the boiling point of liquid nitrogen are determined. High values of ε′ and ε′′ in the low-frequency range are typical for structurally inhomogeneous materials due to the accumulation of electric charges at the surface and within microcrystals. Two dielectric relaxation processes associated with electrical conductivity within the body and at the surface of ceramics are detected for the first time. An increase in conductivity with an increase in the microwave field frequency above 1 MHz is explained by the appearance of a current relaxation component. The activation energy of the static resistance of ceramic specimens is determined as a function of the reciprocal temperature that depends little on the weight content of TiO2 nanoparticles and varies in the range of 0.024 – 0.10 eV This also confirms the existence of two independent conduction processes, weakly dependent on the nanoparticle content in the ceramic composition. With placement of ceramic in a high-frequency electric field, spatial charges are formed, the field of which contributes to creation of additional polarization and dielectric losses.
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4.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Babkina I. V., Volochaev M. N., Zhilova O. V., Kalinin, Yu. E., Makagonov V. A., Pankov, S. Yu., Sitnikov A. V.
Заглавие : Electrical properties of thin In2O3/C films
Коллективы : Russian Federation Ministry of Science and Higher Education [3.1867, 2017/4.6]
Место публикации : Inorg. Mater. - 2020. - Vol. 56, Is. 4. - P.374-381. - ISSN 0020-1685, DOI 10.1134/S0020168520040019. - ISSN 1608-3172(eISSN)
Примечания : Cited References: 26. - This work was supported by the Russian Federation Ministry of Science and Higher Education (state research target, project no. 3.1867, 2017/4.6).
Предметные рубрики: SEMICONDUCTORS
GAS
Аннотация: We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In2O3 granules distributed at random over amorphous carbon. The electrical transport properties of the In2O3/C thin films depend on their thickness. In the temperature range 80-300 K, the dominant electrical transport mechanism in the In2O3/C thin films of thickness h 70 nm sequentially changes from variable range hopping between localized states in a narrow energy band near the Fermi level (between 80 and 120 K) to nearest neighbor hopping (between 120 and 250 K) and then to variable range hopping between localized states in the conduction band tail (between 250 and 300 K). The films of thickness h 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In2O3 nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient.
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5.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dudnikov V. A., Orlov Yu. S., Solovyov, Leonid A., Vereshchagin, Sergey N., Gavrilkin, Sergey Yu., Tsvetkov, Alexey Yu., Velikanov D. A., Gorev M. V., Novikov, Sergey V., Ovchinnikov S. G.
Заглавие : Effect of multiplicity fluctuation in cobalt ions on crystal structure, magnetic and electrical properties of NdCoO3 and SmCoO3
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-02-00022]
Место публикации : Molecules. - 2020. - Vol. 25, Is. 6. - Ст.1301. - ISSN 1420-3049(eISSN), DOI 10.3390/molecules25061301
Примечания : Cited References: 56. - This work is supported by the Russian Science Foundation grant 18-02-00022.
Предметные рубрики: SPIN-STATE TRANSITIONS
CO3+ ION
CONDUCTIVITY
TEMPERATURE
BEHAVIOR
Аннотация: The structural, magnetic, electrical, and dilatation properties of the rare-earth NdCoO3 and SmCoO3 cobaltites were investigated. Their comparative analysis was carried out and the effect of multiplicity fluctuations on physical properties of the studied cobaltites was considered. Correlations between the spin state change of cobalt ions and the temperature dependence anomalies of the lattice parameters, magnetic susceptibility, volume thermal expansion coefficient, and electrical resistance have been revealed. A comparison of the results with well-studied GdCoO3 allows one to single out both the general tendencies inherent in all rare-earth cobaltites taking into account the lanthanide contraction and peculiar properties of the samples containing Nd and Sm.
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6.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Markevich I. A., Selyutin G. E., Drokin N. A., Selyutin A. G.
Заглавие : Electrical and mechanical properties of the high-permittivity ultra-high-molecular-weight polyethylene-based composite modified by carbon nanotubes
Место публикации : Tech. Phys. - 2020. - Vol. 65, Is. 7. - P.1106-1113. - ISSN 10637842 (ISSN), DOI 10.1134/S1063784220070129
Примечания : Cited References: 39
Аннотация: A composite based on ultra-high-molecular-weight polyethylene (UHMWPE) added with 1 wt % of multiwalled carbon nanotubes (MWCNTs) with a high permittivity (ε = 4.5) and a low dielectric loss (tanδ = 10–2) in the frequency range from 100 Hz to 100 MHz has been synthesized, and its main mechanical characteristics have been studied. The material has a low (22 MPa) breaking strength, a high (700%) tensile elongation, and an abrasion resistance higher than that of pure UHMWPE by 37%. It is shown using the X-ray diffraction and differential scanning calorimetry data that the changes in the mechanical properties of the composite are related to the changes in the polymer matrix structure under the action of the high-intensity ultrasonic radiation used for embedding MWCNTs into the polymer.
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7.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Nikolaev S. V., Orlov Yu. S., Dudnikov V. A.
Заглавие : Electronic Structure and Conductivity of a Disordered A1–xBx Binary Alloy in the Cluster Approach for the Hubbard Model
Место публикации : J. Exp. Theor. Phys. - 2020. - Vol. 131, Is. 5. - P.823-837. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776120100131
Примечания : Cited References: 27. - This study was supported by the Foundation “Basis” for development of theoretical physics and mathematics, Russian Foundation for Basic Research (project no. 19-03-00017), Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science according to the research project “Electronic correlation effects and multiorbital physics in iron-based materials and cuprates” (no. 19-42-240007) and research project “Features of electron-phonon coupling in high-temperature superconductors with strong electronic correlations” (no. 18-42-240017)
Аннотация: We propose a method for calculating the electronic band structure of disordered systems with strong electron correlations. Various approaches to the description of electrical conductivity of disordered systems are considered. Calculations are based on determining the one-particle Green function of the system, which is averaged over different configurations of a cluster, on the Boltzmann formalism, and the Kubo linear response theory. As the basic model, we use the Hubbard model for an A –xBx binary alloy.
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8.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Фадеева Н. П., Сайкова С. В., Пикурова Е. В., Воронин А. С., Фадеев Ю. В., Самойло А. С., Тамбасов, Игорь Анатольевич
Заглавие : Новый метод получения прозрачных проводящих пленок оксида индия (III) и оксида индия-олова
Место публикации : Журн. СФУ. Химия. - 2021. - Т. 14, № 1. - С. 45-58. - ISSN 1998-2836, DOI 10.17516/1998-2836-0215; J. Sib. Fed. Univ. Chem. - ISSN 2313-6049(eISSN)
Примечания : Библиогр.: 36. - Работа выполнена при поддержке РФФИ (грант № 18-33-00504) и стипендии Президента Российской Федерации (СП-2235.2019.1). В работе использованы приборы ЦКП СФУ и Красноярского регионального центра коллективного пользования ФИЦ КНЦ СО РАН
Предметные рубрики: ITO THIN-FILMS
ELECTRICAL-PROPERTIES
DEPOSITION
Аннотация: В работе получены седиментационно устойчивые золи гидроксидов индия (III) и олова (IV) методом анионообменного синтеза, заключающимся в обменной реакции между ОН‑ионами анионообменной смолы и анионами металлосодержащих растворов. Синтезированные гидрозоли использованы для получения проводящих пленок оксида индия (III) In2O3 и оксида индия, легированного оловом In2O3:Sn, с поверхностным сопротивлением 4 кОм/кв, толщинами 200–500 нм и прозрачностью более 85 %. Подобраны режимы нанесения прекурсоров на стеклянные подложки модифицированным спрей-методом и методом центрифугирования. Пленки исследованы с помощью РФА, СЭМ, оптической микроскопии и спектрофотометрии.In the work, sedimentation-stable sols of indium (III) and tin (IV) hydroxides were obtained by the Anion Resin Exchange Precipitation, which consists of the exchange reaction between the OH ions of the anion exchange resin and the anions of metal-containing solutions. The synthesized hydrosols were used to obtain conducting films of indium (III) In2O3 oxide and indium oxide doped with Tin In2O3: Sn, with a surface resistance of 4 kOhm/sq, thicknesses of 200-500 urn and a transparency of more than 85 %. The modes of applying precursors to glass substrates by the modified spray method and centrifugation method are selected. Films were studied using XRD, SEM, optical microscopy and spectrophotometry.
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9.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Botvich A. N., Shkuryaev M. P., Vtyurin A. N.
Заглавие : Local electric-field effects and 2nd-harmonic generation in langmuir-blodgett-films
Коллективы : International conference on electrical and related properties of organic solids
Место публикации : Molecular crystals and liquid crystals science and technology : section A- Molecular crystals and liquid crystals. - 1993. - Vol. 230. - P.259-264. - ISSN 0140-6566
Примечания : Cited References: 8
Аннотация: Local electric field of light waves in Langmuir-Blodgett film is calculated, and its effect on optical second harmonic generation (SHG) is estimated. Strong dependence of SHG intensity on the film thickness is explained.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Pazniak H., Stevens M., Dahlqvist M., Zingsem B., Kibkalo L., Felek M., Varnakov S. N., Farle M., Rosen J., Wiedwald U.
Заглавие : Phase stability of nanolaminated epitaxial (Cr1-xFex)2AlC MAX phase thin films on MgO(111) and Al2O3(0001) for use as conductive coatings
Место публикации : ACS Appl. Nano Mat. - 2021. - Vol. 4, Is. 12. - P.13761-13770. - ISSN 25740970 (ISSN), DOI 10.1021/acsanm.1c03166
Примечания : Cited References: 51. - This work has been supported by the Deutsche Forschungsgemeinschaft (DFG) within CRC/TRR 270, project B02 (Project-ID 405553726). The calculations were carried out using supercomputer resources provided by the Swedish National Infrastructure for Computing (SNIC) at the National Supercomputer Centre (NSC) and the High Performance Computing Center North (HPC2N) partially funded by the Swedish Research Council through grant agreement no. 2018-05973. J.R. acknowledges funding from the Knut and Alice Wallenberg Foundation. Support by the Interdisciplinary Center for Analytics on the Nanoscale (ICAN) of the University of Duisburg-Essen (DFG RIsources reference: RI_00313), a DFG-funded core facility (Project nos. 233512597 and 324659309), is gratefully acknowledged. M.F. acknowledges co-funding by the government of the Russian Federation (agreement no. 075-15-2019-1886)
Аннотация: In this study, we model the chemical stability in the (Cr1-xFex)2AlC MAX phase system using density functional theory, predicting its phase stability for 0 ‹ x ‹ 0.2. Following the calculations, we have successfully synthesized nanolaminated (Cr1-xFex)2AlC MAX phase thin films with target Fe contents of x = 0.1 and x = 0.2 by pulsed laser deposition using elemental targets on MgO(111) and Al2O3(0001) substrates at 600 °C. Structural investigations by X-ray diffraction and transmission electron microscopy reveal MAX phase epitaxial films on both substrates with a coexisting (Fe,Cr)5Al8 intermetallic secondary phase. Experiments suggest an actual maximum Fe solubility of 3.4 at %, corresponding to (Cr0.932Fe0.068)2AlC, which is the highest Fe doping level achieved so far in volume materials and thin films. Residual Fe is continuously distributed in the (Fe,Cr)5Al8 intermetallic secondary phase. The incorporation of Fe results in the slight reduction of the c lattice parameter, while the a lattice parameter remains unchanged. The nanolaminated (Cr0.932Fe0.068)2AlC thin films show a metallic behavior and can serve as promising candidates for highly conductive coatings.
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