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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P.708-713. - ISSN 1063-7834, DOI 10.1134/S1063783420040034. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080.
Предметные рубрики: LIGHT-EMITTING-DIODES
PHASE-FORMATION
AG
AL
DIFFUSION
SUPPRESSION
INTERFACE
SURFACE
GROWTH
HEAT
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ivanova N. B., Kazak N. V., Markov V. V., Ovchinnikov S. G., Rudenko V. V., Abd-Elmeguid M. M.
Заглавие : Analysis of the electrical and optical properties of VBO3 single crystals and Fe1-xVxBO3 solid solutions on the basis of a many-electron model of energy band structure
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2004. - Vol. 46, Is. 8. - P1462-1468. - ISSN 1063-7834, DOI 10.1134/1.1788779
Примечания : Cited References: 32. - One of the authors (M.M.A.) would like to thank the Deutsche Forschungsgemeinschaft (SFB608) for financial support. This study was supported by the Russian Foundation for Basic Research (project no. 03-02-16286), the program "Integration" (project no. B0017), and the program of the Division of Physical Sciences of the Russian Academy of Sciences "Strongly Correlated Electrons"
Предметные рубрики: MAGNETIC-PROPERTIES
CALCITE STRUCTURE
PHASE-TRANSITION
FERRIC BORATE
HIGH-PRESSURE
FEBO3
FE1-XCRXBO3
FERROMAGNET
MOSSBAUER
SPECTRA
Аннотация: A many-electron model of the energy band structure of VBO3 and of Fe1 - xVxBO3 solid solutions is proposed with strong electron correlations taken into account. Experimental optical absorption spectra and data on the resistivity are discussed in the framework of the suggested model. Variation in the magnetic and electronic properties of VBO3 and Fe1 - xVxBO3 under high pressure is predicted. For VBO3, a Mott-Hubbard (insulator-metal) transition is expected in the high-pressure phase. In Fe1 - xVxBO3 solid solutions, a nontrivial variation in the properties is predicted, leading to the appearance of a different magnetic state. (C) 2004 MAIK "Nauka / Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Udod L. V., Sitnikov M. N.
Заглавие : Electronic transition, ferroelectric and thermoelectric properties of bismuth pyrostannate Bi2(Sn0.85Cr0.15)2O7
Место публикации : Ceram. Int. - 2018. - Vol. 44, Is. 2. - P.1614-1620. - ISSN 02728842 (ISSN), DOI 10.1016/j.ceramint.2017.10.082
Примечания : Cited References: 41. - The authors would like to thank M. Molokeev for the clarification of x-ray spectra. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project № 16–52-00045 bel_a.
Ключевые слова (''Своб.индексиров.''): dielectric properties--ferroelectric properties--impedance--thermopower--electrical properties
Аннотация: The ferroelectric properties of bismuth pyrostannate Bi2(Sn0.85Cr0.15)2O7 in the high-temperature region are established. The linear thermal expansion coefficient, electrical resistance, impedance, I−V characteristics, capacitance, loss-angle tangent, charge, and thermopower of the investigated material are measured in the temperature range of 300−700 K at frequencies of 102−106 Hz. Anomalies of the thermal expansion coefficient and hodograph spectrum variation in the region of polymorphic phase transitions are observed. The high resistance and change of the hopping conductivity for the tunnel-emission are found. The hysteresis in the electric field dependence of polarization is established. The change in the thermopower sign with temperature is revealed. The obtained experimental data are explained in the framework of the model of migration polarization by charged chromium ions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Krylov A. S., Shipilovskikh S. A., Krylova S. N., Slyusarenko N. V., Timofeeva M., Kenzhebayeva Yu. A., Bachinin S. V., Yushina I. D., Cherepakhin A. V., Shestakov N. P., Nemtsev I. V., Vtyurin A. N., Milichko V. A.
Заглавие : Application of DUT-4 MOF structure switching for optical and electrical humidity sensing
Колич.характеристики :6 с
Место публикации : Dalton Trans. - 2024. - Vol. 53, Is. 8. - P.3459-3464. - ISSN 14779226 (ISSN), DOI 10.1039/D4DT00038B. - ISSN 14779234 (eISSN)
Примечания : Cited References: 37. - The authors acknowledge the support by the state assignment of the Kirensky Institute of Physics FRC KSC SB RAS, also this work was financially supported by the RFBR (Russian Foundation for Basic Research), project no. 21-52-12018. S. A. S. acknowledges the financial support by the Russian Science Foundation (chemical part, Grant No. 22-73-10069 "Design and application of flexible metal organic frameworks for photonics devices"). V.A.M. acknowledges the Priority 2030 Federal Academic Leadership Program Ivan Sergeev (student in ITMO Univ.) for supporting in IV curve analysis. Raman, FTIR and SEM experiments were performed in the Center for Common Use of the Krasnoyarsk Scientific Center SB RAS (Krasnoyarsk, Russia)
Аннотация: The threshold structural transformation of the DUT-4 metal–organic framework (MOF) from an ordered to distorted phase during exposure to ambient conditions has been revealed. The in situ X-ray diffraction analysis, in situ Raman and FTIR spectroscopy, scanning electron microscopy and synchronous thermal analysis have been used for investigation. The reversible effect of exposure time and humidity on such a phase transition has been confirmed. We also demonstrated that the observed phase transition correlated well with changes in the optical and electronic properties of DUT-4, paving the way to a new family of MOF-based phase change materials for optoelectronic applications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aver'yanov E. M.
Заглавие : Influence of the dimension of a polycrystalline film and the optical anisotropy of crystallites on the effective dielectric constant of the film
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2016. - Vol. 58, Is. 8. - P.1634-1641. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783416080035
Примечания : Cited References: 41
Предметные рубрики: EFFECTIVE REFRACTIVE-INDEX
CONJUGATED POLYMER
POLY(P-PHENYLENE VINYLENE)
SPECTROSCOPIC ELLIPSOMETRY
ELECTRICAL-CONDUCTIVITY
LOCAL-FIELD
THIN-FILMS
DISPERSION
POLYFLUORENE
DEVICES
Аннотация: The dimension D of a polycrystalline film and the optical anisotropy m = εz/εx of uniaxial crystallites with the principal components εx = εy and εz of the tensor of the dielectric constant have been shown to produce a strong influence on the effective dielectric constant εD* and the effective refractive index nD* = (εD*)1/2 of the film in the optical transparency region, as well as on the boundaries of the intervals BDl ≤ εD* ≤ BDu. The intervals Δ2(m) = B2l–B2u and Δ3(m) = B3l–B3u are separated by a gap for m in the range 1 m 2, whereas the theoretical dependence ε2*(m) is separated by a gap from the interval Δ3(m) for m in the range 1 m 4. This is confirmed by a comparison of the experimental (noP) and theoretical (nD*) ordinary refractive indices for uniaxial polycrystalline films of the conjugated polymer poly(p-phenylene vinylene) (PPV) with uniaxial crystallites and appropriate values of m. In the visible transparency region of the PPV films with a change in m(λ) in the range 2 m(λ) 3 due to the dependence of the components εx,z(λ) on the light wavelength λ, the refractive indices noP2(λ) 3 near the electronic absorption band of the crystallites, the values of εoP(λ) lie in the region of the overlap of the intervals Δ2(m) and Δ3(m). The boundaries mc of the range 1 m mc are determined, for which the interval Δ2(m) is separated by a gap from the dependences ε3*(m) corresponding to the effective medium theory with spherical crystallites and hierarchical models of a polycrystal, as well as from the proposed new dependence ε3*(m).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Drokin N. A., Poluboyarov V. A.
Заглавие : Impedance spectroscopy study of the electrical properties of cation-substituted barium hexaaluminate ceramics
Место публикации : Phys. Solid State. - 2018. - Vol. 60, Is. 2. - P.274-280. - ISSN 1063-7834, DOI 10.1134/S1063783418020063. - ISSN 1090-6460(eISSN)
Примечания : Cited References:18
Предметные рубрики: DIELECTRIC-RELAXATION
LIQUID-CRYSTALS
SPECTRA
Аннотация: We report on the behavior of frequency and temperature dependences of the impedance of a measuring cell in the form of a parallel-plate capacitor filled with barium hexaaluminate ceramics with four aluminum cations replaced by iron (BaO · 2Fe2O3 · 4Al2O3). The measurements have been performed in the frequency range of 0.5–108 Hz at temperatures of 20-375°C. A technique for determining the electrical properties of the investigated ceramics is proposed, which is based on an equivalent electric circuit allowing the recorded impedance spectra to be approximated with sufficiently high accuracy. The established spectral features are indicative of the presence of two electric relaxation times different from each other by three orders of magnitude. This fact is explained by the difference between the charge transport processes in the bulk of crystallites and thin intercrystallite spacers, for which the charge activation energies have been determined.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Drokin N. A., Kiiko V. S., Pavlov A. V., Malkin A. I.
Заглавие : BT-30 Ceramic Electrophysical Properties
Место публикации : Refract. Ind. Ceram. - 2020. - Vol. 61, Is. 3. - P.341-348. - ISSN 1083-4877 (ISSN), DOI 10.1007/s11148-020-00484-2. - ISSN 1573-9139 (eISSN)
Примечания : Cited References: 12
Аннотация: A total complex resistance (impedance) method is used to study the electrophysical characteristics of (BeO + TiO2)-ceramics modified with TiO2 micro- and nanoparticles in an amount of 30 wt.% (BT-30). Dispersion of the actual ε′ and imaginary ε′′ components of the dielectric permittivity component and specific conductivity in the frequency range from 100 Hz to 100 MHz from room temperature to the boiling point of liquid nitrogen are determined. High values of ε′ and ε′′ in the low-frequency range are typical for structurally inhomogeneous materials due to the accumulation of electric charges at the surface and within microcrystals. Two dielectric relaxation processes associated with electrical conductivity within the body and at the surface of ceramics are detected for the first time. An increase in conductivity with an increase in the microwave field frequency above 1 MHz is explained by the appearance of a current relaxation component. The activation energy of the static resistance of ceramic specimens is determined as a function of the reciprocal temperature that depends little on the weight content of TiO2 nanoparticles and varies in the range of 0.024 – 0.10 eV This also confirms the existence of two independent conduction processes, weakly dependent on the nanoparticle content in the ceramic composition. With placement of ceramic in a high-frequency electric field, spatial charges are formed, the field of which contributes to creation of additional polarization and dielectric losses.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Galyas A. I., Yanushkevich K. I., Sokolov V. V.
Заглавие : Cation-substituted TmXMn1-XS solid solutions with special magnetic and electrical properties
Коллективы : International Conference on Magnetism
Место публикации : 20th Int. Conf. on Magnetism (ICM-2015): book of abstracts. - 2015. - P.241
Предметные рубрики: Semiconductor spintronics
Материалы конференции
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kazak N. V., Ivanova N. B., Rudenko V. V., Ovchinnikov S. G., Vasil'Ev A. D., Knyazev Yu. V.
Заглавие : Conductivity study of Co3O2BO3 and Co 3-xFexO2BO3 oxyborates
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Solid State Phenomena. - 2009. - Vol. 152-153. - С. 104-107. - ISSN 10120394 (ISSN); 390845168X (ISBN); 9783908451686 (ISBN), DOI 10.4028/www.scientific.net/SSP.152-153.104
Ключевые слова (''Своб.индексиров.''): doped cobaltite--electrical conductivity--ludwigite--variable-range hopping--crystal structure--electric conductivity--magnetic materials--single crystals--crystal structure--electric conductivity--magnetic materials--magnetism--single crystals--electrical conductivity--electrical resistivity--experimental data--mott variable-range hopping--oxyborates--temperature regions--variable-range hopping--doped cobaltite--ludwigite--variable range hopping--cobalt--cobalt
Аннотация: Single crystals of cobalt oxyborates Co3O2BO 3 and Co3-xFexO2BO3 were synthesized. The crystal structure and electric properties were investigated. The difference in the electrical resistivity behaviors was found. For parent Co3O2BO3 nor simple activation law, nor Mott variable range hopping (VRH) are acquirable to describe the experimental data in wide temperature region. In contrast for Co3-xFex O 2BO3 Mott's variable-range hopping conductivity clearly dominates.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dudnikov V. A., Ovchinnikov S. G., Orlov Yu.S., Kazak N. V., Michel C. R., Patrin G. S., Yurkin G.Yu.
Заглавие : Contribution of Co3+ ions to the high-temperature magnetic and electrical properties of GdCoO3
Место публикации : J. Exp. Theor. Phys.: MAIK Nauka-Interperiodica / Springer, 2012. - Vol. 114, Is. 5. - P.841-849. - ISSN 1063-7761, DOI 10.1134/S106377611203003X
Примечания : Cited References: 28. - This work was supported by the Ural Branch of the Russian Academy of Sciences and Siberian Branch of the Russian Academy of Sciences (project no. 40), the Russian Foundation for Basic Research (project nos. 09-02-00171-a, 10-02-00251), program 2.3 of the Department of Physical Sciences of Russian Academy of Sciences, and Nonprofit Dinastiya Foundation.
Предметные рубрики: SPIN-STATE
RCOO3 R
TRANSITIONS
COBALTITES
LACOO3
OXIDES
SM
EU
ND
Аннотация: The temperature dependence of the static magnetization of polycrystalline rare-earth cobaltite GdCoO3 is measured in the temperature range 2-800 K. The magnetic behaviors of GdCoO3 and Gd3+ are found to be different at temperatures above room temperature, which is caused by the appearance of a contribution from Co3+ ions at high temperatures. The temperature dependence of the magnetic susceptibility of GdCoO3 is determined by the magnetization of rare-earth gadolinium ions and the additional paramagnetic contribution induced by the thermally excited magnetic terms of Co3+ ions. The LDA + GTB method is used to calculate the electronic structure of GdCoO3 in the temperature range 0-300 K with allowance for strong electron correlations. The energy spectrum of GdCoO3 is found to have intragap states that decrease the dielectric gap width with increasing temperature.
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Samoshkina Yu. E., Edelman I. S., Rautskii M. V., Molokeev M. S.
Заглавие : Correlation between magneto-optical and transport properties of Sr doped manganite films
Место публикации : J. Alloys Compd. - 2019. - Vol. 782. - P.334-342. - ISSN 09258388 (ISSN) , DOI 10.1016/j.jallcom.2018.12.158
Примечания : Cited References: 51. - The authors are grateful to A.V. Malakhovskii (Kirensky Institute of Physics, Federal Research Center KSC SB RAS) for fruitful discussions of the magneto-optics data and V.I. Chichkov and N.V. Andreev (National University of Science and Technology MISiS) for the preparation of the manganite films. The work was supported partly by Russian Academy of Sciences , [grant number 0356-2017-0030 ], and the Russian Foundation for Basic Research , [grant number 16-32-00209 ].
Ключевые слова (''Своб.индексиров.''): thin films--manganites--crystal structure--electrical transport--electronic properties--magnetic circular dichroism
Аннотация: The features of electronic structure of La0.7Sr0.3MnO3 Pr0.8Sr0.2MnO3, and Pr0.6Sr0.4MnO3 polycrystalline films of different thickness have been investigated using magnetic circular dichroism (MCD) in the range of 1.1–4.2 eV. The temperature behavior of the samples electrical resistance were also has been studied. It was found that films with high Sr content (0.3 and 0.4) act as high-temperature semiconductors, while the maximum in the temperature dependences of resistivity these films indicates the transition of the samples to the metallic state at some temperature TM-S, which is different for different sample thickness. The films with the lower Sr content (0.2) act as insulators in the used temperature range. The MCD spectra have been decomposed to the Gaussian-shaped lines, and the temperature dependence of intensity of each line has been analyzed in comparison with temperature dependence of the films magnetization and with their electric conductivity type. Different temperature behavior of the intensity of four specified Gaussian-lines was revealed for semiconductor films. In the case of insulating Pr0.8Sr0.2MnO3 samples, the intensity of three specified Gaussian lines changes with the temperature in the same way as the magnetization changed. It was established that the lanthanide (La, Pr) type does not affect the MCD spectra shape for the films with the same electrical conductivity type. Besides, the correlation between the MCD data of the films and their conductivity type was revealed. Due to the detailed analysis of the specified Gaussian lines with taking into account the well-known in the literature absorption bands, lying outside the studied spectral region, the MCD bands for the studied manganite films have been identified with electronic transitions of a different nature.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Loseva G. V., Ovchinnikov S. G., Chernov V. K., Ivanova N. B., Kiselev N. I., Bovina A. V.
Заглавие : Correlation between the magnetic and electrical properties of the (VS)(x)(Fe2O3)(2-x) oxysulfide system
Разночтения заглавия :us: Correlation between the magnetic and electrical properties of the (VS)x(Fe2O3)2-x oxysulfide system
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2000. - Vol. 42, Is. 4. - P730-733. - ISSN 1063-7834, DOI 10.1134/1.1131281
Примечания : Cited References: 7
Аннотация: The correlation between the magnetic and electrical properties of the (VS)(x)(Fe2O3)(2-x) (0.9 x 1.25) oxysulfide solid solutions has been studied. The crossover of conductivity from the semimetallic to semiconducting type is accompanied by changes in the magnetic susceptibility, which are characteristic of the transition from delocalized to localized electrons. For x
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Galyas A. I., Demidenko O. F., Makovetskii G. I., Yanushkevich K. I., Ryabinkina L. I., Romanova O. B.
Заглавие : Crystal structure and electrical properties of Gd (x) Mn1-x S and Ti (x) Mn1-x Se solid solutions
Коллективы :
Разночтения заглавия :авие SCOPUS: Crystal structure and electrical properties of GdxMn1 - xS and TixMn1 - xSe solid solutions
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2010. - Vol. 52, Is. 4. - P687-690. - ISSN 1063-7834, DOI 10.1134/S1063783410040037
Примечания : Cited References: 10. - This study was supported by the Belarussian Republican Foundation for Fundamental Research (project no. F04-182), the Russian Foundation for Basic Research-Belarussian Republican Foundation for Fundamental Research (project no. 08-02-90031), the Russian Foundation for Basic Research (project nos. 09-02-00554-a and 09-02-92001-NNS-a), and the Federal Agency for Education of the Russian Federation (the State Program "Development of the Scientific Potential of the Higher School," project no. 2.1.1/401).
Предметные рубрики: MNSE
SULFIDES
CO
Аннотация: Regions of the existence of sulfide Gd (x) Mn1 - x S and selenide Ti (x) Mn1 - x Se solid solutions have been identified. Their electrical and thermoelectric properties have been studied in the temperature range 80-900 K. It has been established that the substitution of Gd2+ and Ti2+ ions for Mn2+ cations initiates reversal of the type of charge carrier with respect to the starting compounds MnS and MnSe. The cation substitution in solid solutions brings about a change from the hole conduction (alpha 0) characteristic of the manganese monosulfide and monoselenide to the electronic conduction (alpha 0).
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Samoshkina Yu. E., Rautskii M. V., Stepanova E. A., Neznakhin D. S., Andreev N. V., Chichkov V. I.
Заглавие : Determination of the existence region of a Griffith-like phase in Pr1–xSrxMnO3/YSZ films
Коллективы : Russian Foundation for Basic Research [16-32-00209mol_a]; Council for Grants from the President of the Russian Federation [NSh7559.2016.2]; RF Ministry of Education and Sciences [3.61212017/8.9]
Место публикации : J. Exp. Theor. Phys. - 2017. - Vol. 125, Is. 6. - P.1090-1095. - ISSN 1063-7761, DOI 10.1134/S106377611712007X. - ISSN 1090-6509(eISSN)
Примечания : Cited References:34. - This study was supported by the Russian Foundation for Basic Research (project no. 16-32-00209mol_a) and the Council for Grants from the President of the Russian Federation (NSh7559.2016.2). E. A. Stepanova and D. S. Neznakhin were supported by the RF Ministry of Education and Sciences (State target no. 3.61212017/8.9).
Предметные рубрики: COLOSSAL MAGNETORESISTANCE
ELECTRICAL-PROPERTIES
RARE-EARTH
Аннотация: We have studied the temperature dependences of the magnetic susceptibility and the electron magnetic resonance in Pr1–xSrxMnO3/YSZ polycrystalline films (x = 0.2, 0.4). The paramagnetic properties of samples indicate the presence of short-range-order ferromagnetic correlations above the phase transition temperature (Tc ). The existence region of such correlations has been considered using the Griffith theory.
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15.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Udod L. V., Aplesnin S. S., Sitnikov M. N., Molokeev M. S.
Заглавие : Dielectric and electrical properties of polymorphic bismuth pyrostannate Bi2Sn2O7
Коллективы : Russian Foundation for Basic Research [09-02-00125-a, 14-02-92003 NNS_a, 14-02-90010_Bel_a, 14-12-00124]
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 56, Is. 7. - P.1315-1319. - ISSN 1063-7834, DOI 10.1134/S1063783414070336. - ISSN 1090-6460
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research (project nos. 09-02-00125-a, 14-02-92003 NNS_a, 14-02-90010_Bel_a, and 14-12-00124).
Предметные рубрики: STRONG MAGNETIC-FIELD
DOPED MANGANITES
MAGNETORESISTANCE
Bi2O3
Аннотация: The Bi2Sn2O7 compound existing simultaneously in two polymorphic modifications, namely, orthorhombic and cubic, has been synthesized for the first time by solid-phase synthesis. The dielectric and electrical properties of the compound have been studied in the temperature range 100 K ˂ T ˂ 500 K. Anomalies in the temperature dependences of the electrical resistivity and the permittivity (imaginary and real parts) have been found at both low and high temperatures. These features are explained in terms of the model of martensitic phase transitions.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Udod L. V., Sitnikov M. N., Romanova O. B.
Заглавие : Dielectric and transport properties, electric polarization at the sequential structural phase transitions in iron-substituted bismuth pyrostannate
Место публикации : Ceram. Int. - 2021. - Vol. 47, Is. 2. - P.1704-1711. - ISSN 02728842 (ISSN), DOI 10.1016/j.ceramint.2020.08.287
Примечания : Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research project № 20-52-00005 Bel_a
Аннотация: The electrical characteristics including the electrical resistance, impedance, I–V characteristics, capacitance, dissipation factor, and thermoelectric power of the Bi2Sn2-хFeхO7 (х = 0.1, 0.2) stannates have been investigated in the temperature range of 100–600 K at frequencies of 102–106 Hz. The paramagnetic contribution of electrons to the dynamic magnetic susceptibility has been established. The conductivity mechanism of the compounds has been found from the I–V characteristics and the change in the carrier sign has been determined from the thermoelectric power. The hysteresis of the I–V curves, charge transfer currents and polarization current have been observed in the Bi2Sn1·8Fe0·2O7 compound. A nonlinear field dependence of the polarization in the orthorhombic phase has been found. The correlation between the obtained characteristics and the phase structure transitions has been established. Two relaxation channels and activation energy have been found using the Debye model. The hysteretic I–V characteristics have been explained using a model of the electronic structure and the dipole and migration polarization.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Knyazev, Yu. V., Kazak N. V., Platunov M. S., Ivanova N. B., Bezmaternykh L. N., Arauzo A., Bartolome J., Ovchinnikov S. G.
Заглавие : Disorder- and correlation-induced charge carriers localization in oxyborate MgFeBO4, Mg0.5Co0.5FeBO4, CoFeBO4 single crystals
Место публикации : J. Alloys Compd.: Elsevier Science, 2015. - Vol. 642. - P.232-237. - ISSN 0925, DOI 10.1016/j.jallcom.2015.04.056. - ISSN 18734669(eISSN)
Примечания : Cited References:32. - This work has been financed by Council for Grants of the President of the Russian Federation (Project Nos. NSh-2886.2014.2, SP-938.2015.5), Russian Foundation for Basic Research (Project Nos. 13-02-00958-a, 13-02-00358-a, 14-02-31051-mol-a). The work of one of coauthors (M.S.P.) was supported by the grant of KSAI "Krasnoyarsk Regional Fund of Supporting Scientific and Technological Activities'' and by the Program of Foundation for Promoting the Development of Small Enterprises in Scientific and Technical Sphere ("UMNIK'' program). Financial support from the Spanish MINECO MAT11/23791 and DGA IMANA project E-34 is acknowledged.
Предметные рубрики: WARWICKITE
Fe2OBO3
FeBO3
Ключевые слова (''Своб.индексиров.''): transition metal alloys and compounds--disordered system--semiconductors--electrical transport
Аннотация: The temperature dependence of the resistivity of single crystalline Mg1−xCoxFeBO4 samples with x = 0.0, 0.5, 1.0 is investigated for the temperature range (210–400 K). The conduction was found to be governed by Mott variable-range hopping (VRH) in the low-temperature range (T = 210–270 K) and by thermo-activation mechanism in the high-temperature range (T = 280–400 K). Microscopic electronic parameters, such as the density of the localized states near the Fermi level, localization length, the hopping length, and the activation energy have been obtained. The change of the activation energy observed at high-temperature range was attributed to local structure distortions around Fe and Co atoms. The complicated behavior of charge transfer mechanisms is discussed based on two approaches: atomic disorder and electron correlations.Температурная зависимость сопротивления монокристаллических образцов Mg1- XCoxFeBO4 с х = 0,0; 0.5, 1.0 исследована в интервале температур (210-400 К). Было установлено, что проводимость регулируется Мотт-переменной длиной прыжка (VRH) в области низких температур (T = 210-270 К) и термо-активационным механизмом в области высоких температур (Т = 280-400 К). Микроскопические электронные параметры, такие как плотность локализованных состояний вблизи уровня Ферми, длины локализации, длина прыжка, и энергия активации были получены. Изменение энергии активации наблюдается при высокой температурном Диапазоне, что было связано с локальными искажениями структуры вокруг Fe и Co атомов. Сложный механизм поведения переноса заряда обсуждается на основе двух подходов: атомный беспорядок и электронная корреляция.
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18.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Patrin G.S., Yurkin G.Yu., Beletsky V.V., Volkov N.V., Velikanov D.A.
Заглавие : Doping dependence of magnetic and electrical properties in Fe1-xCoxSi
Коллективы : Institute of Physics, Joint European Magnetic Symposia
Место публикации : 5th Joint Europ. Magn. Symp. (JEMS-2010): Book of abstracts. - 2010. - С. 153
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Beletskii V. V., Velikanov D. A., Volkov N. V., Yurkin G. Yu.
Заглавие : Effect of cobalt impurity ions on the magnetic and electrical properties of iron monosilicide crystals
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 112, Is. 2. - P303-309. - ISSN 1063-7761, DOI 10.1134/S1063776111010146
Примечания : Cited References: 23
Предметные рубрики: GAP FORMATION
FESI
Ключевые слова (''Своб.индексиров.''): concentration dependence--electrical property--energy structures--experimental data--experimental investigations--field dependence--impurity ions--kondo models--magnetic and electrical properties--si crystals--cobalt--crystal impurities--crystals--magnetic susceptibility--electric properties
Аннотация: The results of experimental investigations of Fe1 - x Co (x) Si crystals in the impurity limit with x = 0.001, 0.005, and 0.01 are reported. The temperature and field dependences of the magnetic susceptibility have been studied. According to the experimental data, the introduction of cobalt impurity leads to a change in the energy structure, which is most pronounced in a change in the electrical properties. The temperature, field, and concentration dependences of the resistivity have been measured. The results have been interpreted in the framework of the Kondo model.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Myagkov V. G., Ivanenko A. A., Bykova L. E., Yozhikova E. V., Maksimov I. A., Ivanov V. V.
Заглавие : Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation
Коллективы : Ministry of Education and Science of the Russian Federation [14.513.11.0023]
Место публикации : Semiconductors: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 48, Is. 2. - P.207-211. - ISSN 1063-7826, DOI 10.1134/S1063782614020286. - ISSN 1090-6479
Примечания : Cited References: 42. - This study was supported by the Ministry of Education and Science of the Russian Federation, Federal Targeted Program "Research and Development in Priority Fields of Development of the Science and Technology Complex of Russia for 2007-2013", state contract no. 14.513.11.0023.
Предметные рубрики: GAS SENSOR RESPONSE
INDIUM OXIDE-FILMS
THIN-FILMS
HIGH-PERFORMANCE
TIN OXIDE
TRANSPARENT CONDUCTORS
SUBSTRATE-TEMPERATURE
ROOM-TEMPERATURE
TRANSISTORS
PHOTOREDUCTION
Аннотация: Indium-oxide films are synthesized by the autowave-oxidation reaction. It is shown that, upon exposure to optical radiation, the resistance of the films sharply decreases and the maximal relative change in the resistance is 52% at room temperature. Two resistance relaxation rates after termination of the irradiation, 15 Omega s(-1) during the first 30 s and 7 Omega s(-1) over the remaining time, are determined. The data of infrared spectroscopy of the films show that exposure to optical radiation induces a 2.4% decrease in the transmittance at a wavelength of 6.3 mu m. It is found that, after termination of the irradiation, the transmittance gradually increases with a rate of 0.006% s(-1). It is suggested that photoreduction is the dominant mechanism responsible for changes in the electrical and optical properties of the In2O3 films.
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