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1.


   
    Unit for measuring the magnetic characteristics of thin ferromagnetic films / S. Kleshnina, B. Belyaev, N. Boev [et al.] // Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology, USBEREIT 2020 : proceedings. - 2020. - Ст. 9117609. - P. 326-329, DOI 10.1109/USBEREIT48449.2020.9117609. - Cited References: 7. - This work was supported by the Ministry of Education and Science of 075 11 2019-054
Кл.слова (ненормированные):
thin magnetic films -- measuring unit -- magnetic characteristics -- ferromagnetic resonance
Аннотация: Studying the properties of ferromagnetic films helps in solving the fundamental problems of the physics of magnetic phenomena and in developing the theory of ferromagnetism. Modern software and hardware, along with reliable diagnostic methods are used to research and design thin-film devices. In this regard, the development of devices and methods for measuring the magnetic characteristics of thin ferromagnetic films is an essential task. The aim of the work is to develop an unit for local measurements of the magnetic characteristics of thin ferromagnetic films, which has the ability to change the degree of locality of measurements over a wide range and has high sensitivity at the same time. The article reviews a new unit for measuring the magnetic characteristics of thin ferromagnetic films. The unit allows measuring the value and direction of the anisotropy field on a local area of the film. A block diagram and description of a new unit, as well as methods of measurements are shown in the article. The experimentally obtained distribution of the anisotropy field over the area of the studied sample of Ni 80 Fe 20 film is shown in this work. The experimental results confirm the compliance of the new unit with the declared characteristics. The unit can be used for non-destructive quality control and for measuring uniformity of thin ferromagnetic films magnetic characteristics.

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Держатели документа:
Laboratory of Electrodynamics and Microwave Electronics, Kirensky Institute of Physics, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Kleshnina, S. A.; Клешнина, Софья Андреевна; Belyaev, B. A.; Беляев, Борис Афанасьевич; Boev, N. M.; Боев, Никита Михайлович; Izotov, A. V.; Изотов, Андрей Викторович; Burmitskikh, A. V.; Бурмитских, Антон Владимирович; Gorchakovsky, A.; Горчаковский, Александр Антонович; Ural Symposium on Biomedical Engineering, Radioelectronics and Information Technology(2020 ; 14-15 May ; Yekaterinburg, Russia); Institute of Electrical and Electronics Engineers
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2.


   
    Coexistence of the electric polarization and conductive current in the bismuth–neodymium ferrite garnet films / S. S. Aplesnin, A. N. Masyugin, M. N. Volochaev, T. Ishibashi // J. Mater. Sci. Mater. Electron. - 2021. - Vol. 32. - P. 3766-3781, DOI 10.1007/s10854-020-05121-9. - Cited References: 42 . - ISSN 0957-4522
Кл.слова (ненормированные):
Bismuth -- Bismuth compounds -- Dielectric materials -- Epitaxial films -- Ferroelectricity -- Gallium compounds -- Garnets -- Hysteresis -- Iron compounds -- Neodymium -- Neodymium compounds -- Piezoelectricity -- Single crystals -- Substrates
Аннотация: The Nd1Bi2Fe5O12/Nd2Bi1Fe4Ga1O12 polycrystalline films on the glass substrate and the Nd0.5Bi2.5Fe5O12 epitaxial films on the single-crystal gadolinium gallium garnet substrate have been investigated by impedance and dielectric spectroscopy. The inductive contribution to the impedance and two relaxation channels related to ferroelectric domains and migration polarization have been established. The magnetocapacitance and magnetoimpedance have been determined. The conductive and polarization currents and the phase difference between them for the films of two types have been determined. The critical temperatures of the polarization disappearance and hysteresis I–V have been found. A model of the polarization caused by the piezoelectric effect and flexoelectric interaction has been proposed. I–V hysteresis is explained by the presence of ferroelectric domains near the interface and is associated with the hysteresis of the electric polarization.

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Держатели документа:
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Department of Materials Science and Technology, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan

Доп.точки доступа:
Aplesnin, S. S.; Masyugin, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Ishibashi, T.
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3.


   
    Magnetoresistive effect in the cobalt-doped bismuth ferrite films / O. B. Romanova, S. S. Aplesnin, M. N. Sitnikov [et al.] // J. Mater. Sci.: Mater. Electron. - 2020. - Vol. 31, Is. 10. - P. 7946-7952, DOI 10.1007/s10854-020-03333-7. - Cited References: 39 . - ISSN 0957-4522. - ISSN 1573-482X
РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
BIFEO3 THIN-FILMS
   ELECTRICAL-PROPERTIES

   COFE/CU MULTILAYERS

   GIANT MAGNETORESISTANCE

Аннотация: Bismuth ferrite films have been synthesized by the burst-mode deposition of the BiFe0.8Co0.2O3 solid solutions onto object glasses. The surface morphology of the BiFe0.8Co0.2O3 films has been examined. The effect of electron doping implemented by substitution of cobalt for iron in the BiFe0.8Co0.2O3 films on their magnetic, electrical, and galvanomagnetic properties has been investigated at temperatures of 77-600 K in magnetic fields of up to 12 kOe. The negative magnetoresistance has been observed, which changes its sign in the region of formation of magnetically heterogeneous states and attain its maximum value above room temperature. It has been established that the magnetoresistance is caused by the competition of electron hoppings and localization of electrons in a magnetic field. Using the Hall measurements, the carrier type has been determined. A model of the change in the curriers sign upon heating due to the shift of the chemical potential relative to the impurity subband has been proposed.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.
Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, BELARUS.

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Udod, L. V.; Удод, Любовь Викторовна; Begisheva, O. B.; Demidenko, O. F.
}
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4.


   
    Thermometry and up-conversion luminescence of Ln3+ (Ln = Er, Ho, Tm)-doped double molybdate LiYbMo2O8 / X. Y. Yun, J. Zhou, Y. H. Zhu [et al.] // J. Mater. Sci.: Mater. Electron. - 2020. - Vol. 31, Is. 21. - P. 18370-18380, DOI 10.1007/s10854-020-04382-8. - Cited References: 41. - This work is supported by the National Natural Science Foundation of China (No. 21576002 and 61705003) and Beijing Technology and Business University Research Team Construction Project (No. PXM2019_014213_000007) . - ISSN 0957-4522. - ISSN 1573-482X
   Перевод заглавия: Термометрия и апконверсионная люминесценции двойного молибдата LiYbMo2O8, легированного Ln (3+) (Ln = Er, Ho, Tm)
РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
TEMPERATURE SENSING BEHAVIOR
   OPTICAL THERMOMETRY

   EMISSION

   PHOSPHOR

Аннотация: The discovery of stable and highly sensitive up-conversion (UC) phosphors using the fluorescence intensity ratio (FIR) is a significant challenge in the field of optical temperature sensor. Er3+/Ho3+/Tm3+-doped LiYbMo2O8 UC phosphors with excellent luminescence properties were successfully synthesized through a high-temperature solid-state reaction, and the crystal structure and UC luminescence properties were discussed in detail. The UC process has been investigated by spectra pump power dependence and further explained via the energy level diagram. All emission processes about Er3+ ions and Ho3+ ions are two-photon processes and the blue emission process about Tm3+ ions is a combination of two-photon process and three-photon process. Thermal sensing performances depended on FIR technology were estimated and the sensitivities of LiYb1−xMo2O8:xLn3+ included absolute sensitivity (Sa) and relative sensitivity (Sr) can produce particular change rules with the temperature, which can serve as excellent candidates for applications in optical temperature sensing. With the increase of temperature, the maximum values of Sr of LiYb1−xMo2O8:xLn3+ are 1.16% K−1 (0.05Er3+), 0.25% K−1 (0.01Ho3+), and 0.51% K−1 (0.01Tm3+), respectively. In addition, the Sa value of LiYb0.95Mo2O8:0.05Er3+ phosphor will reach the maximum (1.08% K−1) at 475 K, while the maximum values of Sa of LiYb0.99Mo2O8:0.01Ho3+ and LiYb0.99Mo2O8:0.01Tm3+ are 0.16% K−1, 0.14% K−1.

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Держатели документа:
Beijing Technol & Business Univ, Sch Sci, Beijing 100048, Peoples R China.
RAS, Fed Res Ctr, Kirensky Inst Phys, Lab Crystal Phys,KSC,SB, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia.

Доп.точки доступа:
Yun, Xiangyan; Zhou, Jun; Zhu, Yaohui; Molokeev, M. S.; Молокеев, Максим Сергеевич; Jia, Yetong; Wei, Chao; Xu, Denghui; Sun, Jiayue
}
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5.


    Zobov, V. E.
    On the control of the spread of quantum information in multiple quantum NMR spectroscopy of solids / V. E. Zobov, A. A. Lundin // Proceedings of the International Conference "Micro- and Nanoelectronics – 2021". ICMNE – 2021 : book of abstracts : Oct. 4-8, 2021, Moscow - Zvenigorod, Russia. - 2021. - Ст. q3-02. - P. 149. - Cited References: 5
   Перевод заглавия: О контроле распространением квантовой информации в многоквантовой ЯМР спектроскопии твердых тел

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Доп.точки доступа:
Lundin, A. A.; Лундин, Андрей Арнольдович; Зобов, Владимир Евгеньевич; "Micro- and Nano-Electronics", International Conference(2021 ; Oct. ; Zvenigorod); "Микро- и наноэлектроника", международная конференция(2021 ; окт. ; Звенигород); Квантовая информатика, симпозиум(2021 ; окт. ; Звенигород)Российская академия наук; Физико-технологический институт имени К.А. Валиева РАН
}
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6.


    Zobov, V. E.
    Sequences of selective rotation operators for three group clustering on qutrits by means quantum annealing / V. E. Zobov, I. S. Pichkovskiy // Proceedings of the International Conference "Micro- and Nanoelectronics – 2021". ICMNE – 2021. - 2021. - Ст. q3-02. - P. 149. - Cited References: 4
   Перевод заглавия: Последовательности селективных операторов поворотов для кластеризации на три группы на кутритах посредством квантового отжига

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Доп.точки доступа:
Pichkovskiy, I. S.; Зобов, Владимир Евгеньевич; "Micro- and Nano-Electronics", International Conference(2021 ; Oct. ; Zvenigorod); "Микро- и наноэлектроника", международная конференция(2021 ; окт. ; Звенигород)Квантовая информатика, симпозиум(2021 ; окт. ; Звенигород); Российская академия наук; Физико-технологический институт имени К.А. Валиева РАН
}
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7.


   
    Tunable meta-surface antenna array with holographic beamforming / K. V. Lemberg, A. N. Kosmynin, D. A. Stupnitsky [et al.] // 7th All-Russian Microwave Conference (RMC) : proceedings : IEEE, 2020. - P. 159-161, DOI 10.1109/RMC50626.2020.9312354. - Cited references: 11 . - ISBN 978-1-7281-8078-6
Аннотация: The paper describes tunable meta-surface antenna arrays operation principle. In such an arrays beamforming is carried out by modulating the coupling coefficients between a wave traveling along the surface and electrically small radiators. It is shown that the law of coupling coefficient modulation can be calculated using the principles of holography on the basis of the given “reference” (corresponding to the excitation of the meta-surface) and “object” (corresponding to the required radiation pattern) waves. The results of numerical simulation of the X-band linear antenna array with liquid crystal control elements, which using the described beamforming principle, are presented.

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Публикация на русском языке Антенная решетка на основе управляемой метаповерхности с голографическим принципом диаграммообразования [Текст] / К. В. Лемберг, А. Н. Космынин, Д. А. Ступницкий [и др.]


Доп.точки доступа:
Lemberg, K. V.; Лемберг, Константин Вячеславович; Kosmynin, A. N.; Stupnitsky, D. A.; Grushevsky, E. O.; Грушевский, Евгений Олегович; Podshivalov, I. V.; Подшивалов, Иван Валерьевич; All-Russian Microwave Conference(7 ; 2020 ; Nov. ; 25-27 ; Moscow); Institute of Electrical and Electronics Engineers
}
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8.


    Muraev, P. S.
    Quantum transport in a one-dimensional flux rhombic lattice / P. S. Muraev, A. R. Kolovsky // Quantum Electron. - 2021. - Vol. 51, Is. 6. - P. 502-505, DOI 10.1070/QEL17559. - Cited References: 19. - This work was supported by the Russian Science Foundation (Grant No. 19-12-00167) . - ISSN 1063-7818. - ISSN 1468-4799
РУБ Engineering, Electrical & Electronic + Quantum Science & Technology + Physics, Applied

Кл.слова (ненормированные):
quantum transport -- rhombic lattice -- pseudoclassical approach
Аннотация: We analyse stationary current of the bosonic particles in a flux rhombic lattice connecting two particle reservoirs. For vanishing interparticle interactions the current is shown to monotonically decrease as the flux is increased and become strictly zero for the Peierls phase equal to π. Nonzero interactions modify this dependence and for moderate interaction strength the current is found to be independent of the flux value.

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Публикация на русском языке Мураев, Павел Сергеевич. Квантовый перенос в одномерной вихревой ромбической решетке [Текст] / П. С. Мураев, А. Р. Коловский // Квант. электроника. - 2021. - Т. 51 № 6. - С. 502-505

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Akad Gorodok 50,Stroenie 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Prosp Svobodnyi 79, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Kolovsky, A. R.; Коловский, Андрей Радиевич; Мураев, Павел Сергеевич; Russian Science Foundation [19-12-00167]
}
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9.


    Zobov, V. E.
    Exponential bound on heating rate in periodically driven spin systems / V. E. Zobov, M. M. Kucherov // Proceedings of the International Conference "Micro- and Nanoelectronics – 2018". ICMNE – 2018 : book of abstracts : October 1-5, 18, Moscow – Zvenigorod, Russia. - 2018. - Ст. q3-03. - P. 150, DOI 10.29003/m209.ICMNE-2018. - Cited References: 3 . - ISBN 978-5-317-05917-0

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Доп.точки доступа:
Kucherov, M. M.; Зобов, Владимир Евгеньевич; "Micro- and Nano-Electronics", International Conference(2018 ; Oct. ; Zvenigorod); "Микро- и наноэлектроника", международная конференция(2018 ; окт. ; Звенигород)Квантовая информатика, симпозиум(2018 ; окт. ; Звенигород); Российская академия наук; Физико-технологический институт имени К.А. Валиева РАН
}
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10.


    Govorun, I. V.
    New method for observation ferromagnetic resonance spectra / I. V. Govorun, A. A. Leksikov // 14th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2018 : Proceedings. - 2018. - P. 41-44, DOI 10.1109/APEIE.2018.8545359. - Cited References: 8 . - ISBN 9781538670545
Рубрики:
Magnetomechanical effects
   Magnetic films

   Magnetic fields

Кл.слова (ненормированные):
Microstrip resonator -- coupling coefficient -- ferromagnetic resonance -- damping pole
Аннотация: A new method for observation of ferromagnetic resonance spectra is demonstrated. Its operation based on the registering a damping pole in the frequency response of two-resonator microstrip structure containing a sample under investigation. A damping pole arises due to mutual compensation of capacitive (electric) and inductive (magnetic) interactions between the resonators and this compensation get broken in the ferromagnetic resonance.

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Держатели документа:
Krasnoyarsk Scientific Center, SB, RAS, Krasnoyarsk, Russian Federation
L. V. Kirensky Institute of Physics, SB, RAS, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Leksikov, A. A.; Лексиков, Александр Александрович; International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering(14 ; 2 - 6 October 2018 ; Novosibirsk, Russia); Institute of Electrical and Electronics Engineers
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