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Вид документа : Однотомное издание
Шифр издания :
Заглавие : International workshop on actual problems of condensed matter physics : Program. Book of abstracts
Выходные данные : Krasnoyarsk, 2017
Колич.характеристики :30 с
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics (27 Mar. - 1 Apr. 2017; Krasnoyarsk/ Cheremushki) :
Содержание : Magnetic and transport properties of the epitaxial Fe3Si film on a Si substrate/ I. A. Bondarev. The magnetic anisotropy of the Fe and Fe(1-x)Si(x) thin films depend on/ I. A. Yakovlev [и др.]. Inverted opals as the Josephson networks of weak links/ S. I. Popkov [и др.]. Electronic structure and Fermi surface within the cluster perturbation theory in X-operators representation/ S. Nikolaev, V. I. Kuz'min, S. G. Ovchinnikov. DFT investigation of electronic and optical magnetic properties of one dimensional transition metal halide structuresTmHaI3/ A. S. Fedorov [и др.]. Effect of interatomic exchange interaction on spin crossover and Mott-Hubbard transition under high pressure and the physical properties of the low Earth’s mantle/ S. G. Ovchinnikov [и др.]. Extremely high magnetic-field sensitivity of charge transport in the Mn/SiO2/p-Si hybrid structure/ I. A. Tarasov [и др.]. Marnetic-field sensitivity of charge transport in silicon-based hybrid structures/ N. V. Volkov [et al.]. Fabrication of multi-terminal planar devices based on epitaxial Fe1-xSix films grown on Si(111)/ A. V. Lukyanenko, A. S. Tarasov, I. A. Tarasov [et al.] ; A. V. Luyanenko [и др.]. Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hibrid structure with the Scottky barrier/ M. V. Rautskii [и др.]. Small angle X-ray scattering and atomic structure of aptamer biomolecules/ R. Moryachkov [и др.]. Iron silicides and pure iron epitaxial and highly-textured nanostructures on silicon: growth and their physical properties/ I. A. Tarasov [и др.]. Magnetic nanoparticles and DNA-aptamers conjugates for diagnostics and therapy of cancer/ A. E. Sokolov [и др.]. The microscopic origin of ferromagnetism in Fe silicides/ I. S. Sandalov [и др.].
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Вид документа : Однотомное издание
Шифр издания :
Автор(ы) : Iskhakov R. S., Frolov G. I., Zhigalov V. S., Prokof'ev D. E., Burkova L. V.
Заглавие : From superparamagnetic to magnetically ordered state in Co-Sm-О nanocrystalline films
Место публикации : Physics of Metals and Metallogra phy. - 2006. - Vol. 102, Suppl. 1. - P.S61-S63. - DOI 10.1134/S0031918X06140158
Примечания : Библиогр.: 11
Аннотация: Transition of the system of Co nanoparticles from a superparamagnetic state into the region of cooperative magnetic ordering caused by effects of magnetic interaction between particles has been analyzed. The possibility of the preparation of materials with soft magnetic properties and higher electrical resistivity was shown.
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Вид документа : Однотомное издание
Шифр издания :
Заглавие : Euro-asian symposium "Trends in magnetism" (EASTMAG-2004) : Abstract book
Выходные данные : Krasnoyarsk, 2004
Колич.характеристики :418 с
Коллективы : Российская академия наук, Сибирское отделение РАН, Институт физики им. Л.В. Киренского Сибирского отделения РАН, Красноярский государственный университет, Красноярский государственный технический университет, Институт физики металлов Уральского отделения РАН, Научный совет по физике конденсированных сред РАН, Научный совет РАН по физике низких температур, Красноярский научный центр Сибирского отделения РАН, Euro-asian symposium "Trends in magnetism" (2; 2004 ; Aug. 24-27; Krasnoyarsk), "Trends in magnetism", Euro-Asian Symposium (2; 2004 ; Aug. 24-27; Krasnoyarsk)
Примечания : Bibliogr. at the end of the articles - Auth. ind. :
Содержание : Fundamental magnetic properties ; Transport phenomena and spin electronics ; Magnetism and strongly correleted electron systems ; Spin glasses, disordered magnetic systems ; Dynamics of spin systems and magnetic resonances ; Magnetooptics and X-ray magnetooptics ; Magnetic mechanism of the superconductivity ; Domain structure and magnetization processes ; Thin magnetic films and multilayers ; Magnetic particles and nanocrystalline materials ; Molecular magnetism ; Magnetic storage/memory and applications
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Вид документа : Однотомное издание (Препринт)
Шифр издания :
Автор(ы) : Berzhansky V. N., Gavrichkov S. A., Drokin N. A., Ivanov V. I., Kononov V. P., Pirogova A. M., Chernov V. K., Chzhan A. V., Shishkov A. G., Edelman I. S.
Заглавие : Synthesis and physical properties of chalcogenide chromium spinel films : препринт. № 455Ф
Выходные данные : Красноярск: ИФ СО АН СССР, 1987
Колич.характеристики :48 с
Коллективы : Академия наук СССР, Сибирское отделение АН СССР, Институт физики им. Л.В. Киренского Сибирского отделения АН СССР
Примечания : Библиогр. :
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Вид документа : Однотомное издание (Препринт)
Шифр издания : В37/M17
Автор(ы) : Greben'kova Yu., Sokolov A. Е., Molokeev M. S., Stepanova E., Chichkov V. I., Andreev N. V., Edelman I. S.
Заглавие : Magnetic and magneto-optical properties of the Pr0.8Sr0.2MnO3 and Pr0.6Sr0.4MnO3 thin films : препринт. 854Ф
Выходные данные : Krasnoyarsk, 2014
Колич.характеристики :16 с
Коллективы : Институт физики им. Л.В. Киренского Сибирского отделения РАН, Национальный исследовательский технологический университет "МИСИС", Уральский Федеральный университет им. Первого Президента России Б.Н. Ельцина
Примечания : Bibliogr. :
ГРНТИ : 29.19.16 + 29.19.37 + 29.31.21
Предметные рубрики: Тонкие пленки-- Свойства магнитные
Тонкие пленки-- Свойства оптические
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Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Volochaev M. N., Zhilova O. V., Pankov S. Yu., Sitnikov A. V., Makagonov V. A., Babkina I. V.
Заглавие : The structure, electrical and magnetoresistance properties of heterogeneous films [In2O3/(Co40Fe40B20)34(SiO2)66]92
Коллективы : International Young Researchers' Conference on Physics, Technologies and Innovation
Место публикации : AIP Conf. Proc. - 2019. - Vol. 2174: 6th International Young Researchers' Conference on Physics, Technologies and Innovation, PTI 2019 (20-23 May 2019) Conference code: 155607. - Ст.020274. - , DOI 10.1063/1.5134425
Примечания : Cited References: 11. - This work was supported by the Ministry of Education and Science of the Russian Federation as the project part of the state task (No 3.1867.2017/4.6)
Аннотация: The [In2O3/(Co40Fe40B20)34(SiO2)66]92 thin films were obtained by ion beam sputtering. X-ray and TEM studies of the structure and phase composition showed that the [In2O3/(Co40Fe40B20)34(SiO2)66]92 films characterized by multilayer structure, where (Co40Fe40B20)34(SiO2)66 nanocomposite layers and In2O3 spacers are amourphous. It is shown that the introduction of In2O3 spacers in (Co40Fe40B20)34(SiO2)66 nanocomposite leads to decreasing in specific resistance due to creation continues conductivity layers of low-resistance In2O3. All investigated samples characterized by the presence of magnetoresistance both at 77 K and at room temperature, which is characteristic of ferromagnetic metal-dielectric nanocomposites.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Аверьянов, Евгений Михайлович
Заглавие : Новые методы исследования ориентационного порядка одноосных молекулярных пленок на основе оптических данных
Место публикации : Жидк. кристаллы и их практич. использ. - 2020. - Т. 20, № 1. - С. 41-46. - ISSN 1991-3966, DOI 10.18083/LCAppl.2020.1.41; Liq. Cryst. Appl.
Примечания : Библиогр.: 7
Аннотация: Установлена связь компонент ε(1,2)j(ω) диэлектрической функции εj(ω) = ε1j(ω) + iε2j(ω) для одноосной молекулярной пленки в области изолированной полосы поглощения света, поляризованного вдоль (j = ||) и нормально (j = ⊥) оптической оси пленки, с параметром ориентационного порядка S дипольных моментов молекулярных переходов, отвечающих данной полосе поглощения. Развиты новые методы определения S, подтвержденные для пленки органического полупроводника PTCDA нанометровой толщины с известными зависимостями ε(1,2)j(ω) в областях прозрачности и низкочастотного электронного поглощения. Показано влияние ориентационного порядка и анизотропии динамических диполь-дипольных межмолекулярных взаимодействий (эффектов локального поля) на положение максимумов полос ε2j(ω).The components ε(1,2)j(ω) of the dielectric function εj(ω) = ε1j(ω) + iε2j(ω) for uniaxial molecular film in the region of an isolated absorption band of the light polarized along (j = ||) and across (j = ⊥) the film optical axis were considered. The connection of the components with the orientation order parameter S of the dipole moments of molecular transitions corresponding to a given absorption band was established. New methods for determining S are developed. They are confirmed for the organic semiconductor PTCDA film of nanoscale thickness with the known dependences ε(1,2)j(ω) in the transparency and low-frequency electron absorption regions. The effect of the orientation order and anisotropy of dynamic dipole-dipole intermolecular interactions (local-field effects) on the maxima position of the ε2j(ω) bands was shown.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhigalov V. S., Bykova L. E., Myagkov V. G., Pavlova A. N., Volochaev M. N., Matsynin A. A., Patrin G. S.
Заглавие : CoPt-Al2O3 nanocomposite films: synthesis, structure, and magnetic properties
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [18-42-243009 r_mol_a, 19-43-240003 r_a]; Foundation for Assistance to Small Innovative Enterprises in Science and Technology [11843GU/2017, 0033636]
Место публикации : J. Surf. Ingestig. - 2020. - Vol. 14, Is. 1. - P.47-53. - ISSN 1027-4510, DOI 10.1134/S102745102001022X. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 29. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research projects no. 18-42-243009 r_mol_a and no. 19-43-240003 r_a, and the Foundation for Assistance to Small Innovative Enterprises in Science and Technology, contract no. 11843GU/2017, code 0033636, U.M.N.I.K. competition.
Предметные рубрики: SOLID-STATE SYNTHESIS
GRANULAR THIN-FILMS
THERMITE SYNTHESIS
PHASE
Аннотация: The structure and magnetic properties of CoPt–Al2O3 nanocomposite films synthesized by the annealing of Al/(Co3O4 + Pt) bilayers on a MgO(001) substrate at 650°C in vacuum are investigated. The synthesized composite films contain ferromagnetic CoPt grains with an average size of 25–45 nm enclosed in a nonconducting Al2O3 matrix. The saturation magnetization (Ms ~ 330 G) and coercivity (Hc ≈ 6 kOe) of the films are measured in the film plane and perpendicular to it. The obtained films are characterized by a spatial rotational magnetic anisotropy, which makes it possible to arbitrarily set the easy magnetization axis in the film plane or perpendicular to it using a magnetic field stronger than the coercivity (H ˃ Hc).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Structural phase transformations during a solid-state reaction in a bilayer Al/Fe thin-film nanosystem
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 1. - P.200-205. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783420010059
Примечания : Cited References: 36. - This study was supported by the Russian Foundation for Basic Research, project no. 18-03-01173a
Аннотация: The processes of phase formation during a solid-state reaction between Fe and Al nanolayers have been investigated by the in situ electron diffraction method. It is established that the solid-state reaction at the interface between iron and aluminum nanolayers begins at ≈100°C with the formation of a disordered Al solid solution in α-Fe. It is shown that intermetallic phases (FeAl6 and/or Fe2Al5, FeAl, and Fe3Al) are successively formed upon further heating.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Moiseenko E. T., Altunin R. R., Zharkov S. M.
Заглавие : In situ electron diffraction and resistivity characterization of solid state reaction process in Cu/Al bilayer thin films
Место публикации : Metall. Mat. Trans. A. - 2020. - Vol. 51, Is. 3. - P.1428-1436. - ISSN 10735623 (ISSN), DOI 10.1007/s11661-019-05602-5
Примечания : Cited References: 52. - The authors wish to thank the financial support from the Russian Science Foundation (Grant #18-13-00080)
Аннотация: Solid state reaction processes in Cu/Al thin films have been studied using the methods of in situ electron diffraction and electrical resistivity measurements. The solid state reaction in the Cu/Al thin films has been found to begin already at 88 °C with the formation of the Al2Cu phase in the process of thermal heating in vacuum. The phase sequence at the solid state reaction in the films under study has been determined to be the following: Al2Cu → AlCu → Al4Cu9. A model has been suggested for describing the initial formation stage of intermetallic compounds at the solid state reaction in Cu/Al thin films. According to this model, at the initial stage, the intermetallic compounds are formed as separate crystallites at the interface in the Cu/Al thin films. The suggested model can be applied both to the formation of the first phase, Al2Cu, and to the subsequent phases: AlCu and Al4Cu9. For the Al4Cu9 phase the temperature coefficient of the electrical resistivity has been determined to be equal to αAl4Cu9= 1.1 × 10−3 K−1.
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11.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Krakhalev M. N., Prishchepa O. O., Feyzer K. A., Sutormin V. S., Loiko V. A., Konkolovich A. V., Miskevich A. A., Zyryanov V. Ya.
Заглавие : Electro-optical response of PDLC films with conical boundary conditions
Коллективы : EuroDisplay international conference, Society for Information Displays, Белорусский государственный университет информатики и радиоэлектроники
Место публикации : EuroDisplay 2019: book of abstracts of International conference. - 2019. - Ст.O-31. - P.63
Примечания : Cited References: 3
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lukyanenko A. V., Tarasov A. S., Shanidze L. V., Yakovlev I. A., Zelenov F. V., Masugin A. N., Ivanov A. B., Baron F. A., Volkov N. V.
Заглавие : Synthesis and transport properties of FET based on Heusler alloy thin films formed by rapid thermal annealing
Коллективы : International School and Conference on optoelectronics, photonics, engineering and nanostructures
Место публикации : J. Phys.: Conf. Ser. - 2019. - Vol. 1410. - Ст.012017. - ISSN 1742-6588, DOI 10.1088/1742-6596/1410/1/012017. - ISSN 1742-6596 (eISSN)
Примечания : Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 17-02-00302 and supported in part by the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences, project II.8.70, and the Presidium of the Russian Academy of Sciences, Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies».
Аннотация: In this work we show a preparation technique of Co2FeSi full-Heusler alloy thin films on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The films of the Co2FeSi alloy were formed by a silicidation reaction, caused by RTA, between the ultrathin SOI (001) layer and the Fe/Co layers deposited on it. It is assumed that this technology is compatible with the process of formation of a half-metal source-drain in an advanced CMOS and SOI technology and will be applicable for the manufacture of a source-drain of a field-effect transistor. Schottky barrier field-effect transistors (FET) with a back-gate, based on silicon nanowires with source and drain of a Co2FeSi film, synthesized on an SOI substrate, were manufactured. The transport properties of the device were investigated.
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13.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Loiko V. A., Zyryanov V. Ya., Konkolovich A. V., Miskevich A. A., Prishchepa O. O., Shabanov A. V., Krakhalev M. N.
Заглавие : Spectral dependences of transmittance and polarizing ability of stretched PDLC films with homogeneous and inhomogeneous interface anchoring
Коллективы : EuroDisplay international conference, Society for Information Displays, Белорусский государственный университет информатики и радиоэлектроники
Место публикации : EuroDisplay 2019: book of abstracts of International conference. - 2019. - Ст.O-9. - P.25
Примечания : Cited References: 2
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14.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Samoshkina Yu. E., Rautskii M. V., Neznakhin D. S., Stepanova E. A., Andreev N., Chichkov V. I.
Заглавие : Inhomogeneity of magnetic states in polycrystalline Sr doped PrMnO3 films
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст.H.P10. - P.88-89. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 3
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15.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Chekanova L. A., Denisova E. A., Komogortsev S. V., Iskhakov R. S., Nemtsev I. V., Volochaev M. N.
Заглавие : Nanocomposite FeCo films based on arabinogalactan: synthesis and magnetic properties
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст.J.P36. - P.250-251. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 5. - This work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 18-42-240006
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bhagat, Babli, Semisalova, Anna, Meckenstock, Ralf, Farle M.
Заглавие : Reversal of uniaxial magnetic anisotropy in Fe/GaAs (110) films driven by surface relaxation: An in situ ferromagnetic resonance study
Коллективы : Deutsche Forschungsgemeinschaft (DFG, German Research Foundation)German Research Foundation (DFG) [RO 5030/2-1, 405553726-TRR 270]; Government of the Russian Federation [075-15-2019-1886]
Место публикации : AIP Adv. - 2020. - Vol. 10, Is. 7. - Ст.075219. - ISSN 2158-3226(eISSN), DOI 10.1063/5.0004261
Примечания : Cited References: 32. - This work was supported by Deutsche Forschungsgemeinschaft (DFG, German Research Foundation): Project Nos. RO 5030/2-1 and 405553726-TRR 270, and by the Government of the Russian Federation (Research Grant No. 075-15-2019-1886). The authors acknowledge Florian Romer for initial funding and training and are thankful to Benjamin Zingsem for helping in data fitting and to Ulf Wiedwald for AFM measurements.
Предметные рубрики: EPITAXIAL FE FILMS
GAAS(001)
GAAS
RECONSTRUCTION
LAYERS
Аннотация: We report an in situ study of the time evolution of magnetic anisotropy constants of an uncapped 4 nm [~ 27 monolayers (ML)] Fe film epitaxially grown on a GaAs (110) substrate at room temperature under ultra-high vacuum (UHV) conditions. The structural and chemical properties are monitored by low energy electron diffraction and Auger spectroscopy with a sensitivity of 0.01 ML. The in situ UHV ferromagnetic resonance (FMR) study over a period of 6 days in 10-9 Pa reveals that there is a slow magneto-morphological transition of the Fe film surface at room temperature. The resonance field measured in situ in the [110] direction initially changes at a rate of 0.3 mT/h within 30 h after deposition and later at 0.1 mT/h over 80 h. We determine the time-dependent changes in the in-plane and out-of-plane anisotropy constants and find a sign change in the uniaxial in-plane anisotropy in the first 24 h due to morphological changes at the surface. The in situ FMR measurements and the Auger analysis allow us to exclude changes in the magnetization and anisotropy due to the contamination and oxidation of the Fe film.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Ivanenko A. A., Bykova L. E., Zhigalov V. S., Volochaev M. N., Velikanov D. A., Matsynin A. A., Bondarenko G. N.
Заглавие : Solid-state synthesis, magnetic and structural properties of interfacial B2-FeRh(001) layers in Rh/Fe(001) films
Место публикации : Sci. Rep. - 2020. - Vol. 10, Is. 1. - Ст.10807. - ISSN 20452322 (ISSN), DOI 10.1038/s41598-020-67837-2
Примечания : Cited References: 65. - The authors thank L.A. Solovyov for their help on the orientation relationships measurements and I.V. Nemtsev for assisting with the measurements of the samples’ composition. This work was supported by RFBR together with the Government of the Krasnoyarsk Territory, the Krasnoyarsk Regional Fund of Science (project № 19-43-240003). The work is partially based upon the experiments performed on Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS»
Предметные рубрики: Magnetic properties and materials
Аннотация: Here we first report results of the start of the solid-state reaction at the Rh/Fe(001) interface and the structural and magnetic phase transformations in 52Rh/48Fe(001), 45Rh/55Fe(001), 68Rh/32Fe(001) bilayers from room temperature to 800 °C. For all bilayers the non-magnetic nanocrystalline phase with a B2 structure (nfm-B2) is the first phase that is formed on the Rh/Fe(001) interface near 100 °C. Above 300 °C, without changing the nanocrystalline B2 structure, the phase grows into the low-magnetization modification αlʹ (MSl ~ 825 emu/cm3) of the ferromagnetic αʹ phase which has a reversible αlʹ ↔ αʺ transition. After annealing 52Rh/48Fe(001) bilayers above 600 °C the αlʹ phase increases in grain size and either develops into αhʹ with high magnetization (MSh ~ 1,220 emu/cm3) or remains in the αlʹ phase. In contrast to αlʹ, the αhʹ ↔ αʺ transition in the αhʹ films is completely suppressed. When the annealing temperature of the 45Rh/55Fe(001) samples is increased from 450 to 800 °C the low-magnetization nanocrystalline αlʹ films develop into high crystalline perfection epitaxial αhʹ(001) layers, which have a high magnetization of ~ 1,275 emu/cm3. αhʹ(001) films do not undergo a transition to an antiferromagnetic αʺ phase. In 68Rh/32Fe(001) samples above 500 °C non-magnetic epitaxial γ(001) layers grow on the Fe(001) interface as a result of the solid-state reaction between the epitaxial αlʹ(001) and polycrystalline Rh films. Our results demonstrate not only the complex nature of chemical interactions at the low-temperature synthesis of the nfm-B2 and αlʹ phases in Rh/Fe(001) bilayers, but also establish their continuous link with chemical mechanisms underlying reversible αlʹ ↔ αʺ transitions.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Voronin A. S., Evsevskaya N. P., Kuznetsov, Yu M., Luk'yanenko A. V., Tambasova E. V., Gornakov M. O., Dorokhin, M., V, Loginov, Yu Yu
Заглавие : Experimental study of the thermal conductivity of single-walled carbon nanotube-based thin films
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of the Krasnoyarsk Territory; Krasnoyarsk Territorial Foundation for Support of Scientific and RD Activity [18-42-243010]; Russian FederationRussian Federation [SP-2235.2019.1]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 6. - P.1090-1094. - ISSN 1063-7834, DOI 10.1134/S1063783420060311. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 21. - This study was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activity, project Study of the Thermal Conductivity and Structural Features in Nanostructured Oxide Thin Films Promising for Thermoelectric Applications no. 18-42-243010 and the Scholarships of the President of the Russian Federation (SP-2235.2019.1).
Предметные рубрики: THERMOELECTRIC PROPERTIES
TRANSPORT-PROPERTIES
Аннотация: The single-walled carbon nanotube-based thin films with a thickness from 11 ± 3 to 157 ± 18 nm have been formed using vacuum filtration. The thermal conductivity of the thin films as a function of thickness and temperature up to 450 K has been studied by the 3ω technique. It has been found that, in the region of 49 nm, the supplied heat from a gold strip started propagating with the high efficiency to the thin film plane. The thermal conductivity of the thin films with a thickness of 49 ± 8 nm was measured using the 3ω technique for bulk samples. It has been found that the thermal conductivity of the single-walled carbon nanotube-based thin films strongly depends on their thickness and temperature. The thermal conductivity sharply (by a factor of ~60) increases with an increase in thickness from 11 ± 3 to 65 ± 4 nm. In addition, it has been observed that the thermal conductivity of the thin film with a thickness of 157 ± 18 nm rapidly decreases from 211 ± 11 to 27.5 ± 1.4 W m–1 K–1 at 300 and 450 K, respectively.
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19.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Bondarev I. A., Romanenko A. I.
Заглавие : α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
Место публикации : J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P.851-861. - ISSN 1027-4510, DOI 10.1134/S1027451020040357. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70)
Предметные рубрики: β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Podorozhnyak, Sergey A., Chzhant, Anatoly, V, Maltsevt, Vadim K., Krayuhin, Ivan N., Patrin G. S., Sakash, Irina Yu
Заглавие : Structural changes of Co caused a change of the solution pH during chemical deposition
Место публикации : J. Sib. Fed. Univ. Math. Phys. - 2020. - Vol. 13, Is. 4. - P.451-458. - ISSN 1997-1397, DOI 10.17516/1997-1397-2020-13-4-451-458; Журн. СФУ. Матем. и физика. - ISSN 2313-6022(eISSN)
Примечания : Cited References: 10
Предметные рубрики: COBALT
MICROSTRUCTURE
Аннотация: The phase transformations of the Co lattice are discussed, which determine the anomalous changes in the magnetic properties of chemically deposited Co-P films obtained at various pH values. The coercivity of the H-c films obtained at low pH values exceeds 1 kOe and decreases to several units Oe in the films obtained at high pH values. It is shown that the observed changes in the magnetic properties of Co-P films are caused by the transition of the cobalt crystal lattice to the nanocrystalline state.Обсуждаются фазовые превращения решетки Co, которые определяют аномальные изменения магнитных свойств химически осажденных пленок Co-P, полученных при различных значениях pH. Коэрцитивная сила пленок, полученных при низких значениях pH, превышает 1 кЭ и снижается до нескольких единиц Э в пленках, полученных при высоких значениях pH. Показано, что наблюдаемые изменения магнитных свойств пленок Co-P вызваны переходом кристаллической решетки кобальта в нанокристаллическое состояние.
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