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Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures / N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2018. - Vol. 451. - P. 143-158, DOI 10.1016/j.jmmm.2017.11.008. - Cited References: 31. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects № 17-02-00302, 16-42-242036 and 16-42-243046. . - ISSN 0304-8853
Кл.слова (ненормированные):
Hybrid structures -- Magnetoresistance -- Magnetoimpedance -- Photo-magneto-electric effect -- Magnetoelectronics
Аннотация: Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Bondarev, I. A.; Бондарев, Илья Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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    Exchange bias in graphitic C/Co composites / H. -S. Hsu [et al.] // Carbon. - 2017. - Vol. 114. - P. 642-648, DOI 10.1016/j.carbon.2016.12.060. - Cited References: 54. - The authors would like to thank the Ministry of Science and Technology of the Republic of China, Taiwan, for financially supporting this research under Contract No. MOST 104-2112-M-153 -002 -MY3 (Hua-Shu Hsu), MOST 103-2112-M-213-004-MY3 (Hong-Ji Lin), and MOST 104-2112-M-390-001 (Shih-Jye Sun). We are thankful also to the President of Russia Program of support the leading scientific schools, grant NSh-7559,2016.2 (SGO). . - ISSN 0008-6223
   Перевод заглавия: Обменное смещение в графитовом композитном материале C/Co
Кл.слова (ненормированные):
Carbides -- Carbon -- Dichroism -- High resolution transmission electron microscopy -- Magnetoelectronics -- Transmission electron microscopy -- X ray absorption -- Electronics production -- Exchange bias effects -- Experimental evidence -- Magnetic interactions -- Potential materials -- Spintronics application -- Theoretical modeling -- X-ray magnetic circular dichroism -- Magnetic materials
Аннотация: The exchange bias (EB) effect, which is the shift of the hysteresis loop of a ferromagnet in direct contact with an antiferromagnet, is highly advantageous for the development of spintronics applications. Carbon (C) has been considered as a potential material in next generation electronics production as well as spintronics devices beyond silicon. Here we show experimental evidence for an EB in C/Co composites. The significant EB needs thermal annealing to occur. X-ray absorption spectra and transmission electron microscopy data of these samples reveal that Co carbides in as grown samples decompose and form graphitic C/Co interfaces after annealing. Using x-ray magnetic circular dichroism we have detected the C spins that are responsible for the EB. These results inspire a theoretical model to investigate the magnetic interactions in graphitic C/Co interfaces and interpret the observed results. © 2016 Elsevier Ltd

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Держатели документа:
Department of Applied Physics, National Pingtung University, 4-18, Minsheng Road, Pingtung, Taiwan
National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu, Taiwan
Department of Applied Physics, National University of Kaohsiung, 700, Kaohsiung University Road, Kaohsiung, Taiwan
Kirensky Institute of Physics SB RAS, Akademgorodok 50, Bld. 38, Krasnoyarsk, Russian Federation
Siberian Federal University, 79 Svobodny pr., Krasnoyarsk, Russian Federation

Доп.точки доступа:
Hsu, Hua-Shu; Chang, Y.-Y.; Chin, Y.-Y.; Lin, H.-J.; Chen, C.-T.; Sun, S.-J.; Zharkov, S. M.; Жарков, Сергей Михайлович; Lin, C.-R.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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Response of a manganite-based magnetic tunnel structure to microwave radiation / N. V. Volkov [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 125-128, DOI 10.4028/www.scientific.net/SSP.190.125 . - ISBN 978. - ISBN 9783037854365
Кл.слова (ненормированные):
Magnetic tunnel structure -- Microwave detection effect -- Spintronics -- Current flowing -- Current-in-plane geometry -- Magnetic tunnels -- Magnetization dynamics -- Microwave detection -- Non-Linearity -- Rectification effects -- Spin-polarized currents -- Voltage signals -- Magnetic materials -- Magnetoelectronics -- Manganese oxide -- Microwaves -- Magnetism
Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a significant voltage signal due to the rectification effect. The measurements were carried out using current-in-plane geometry with a current flowing parallel to the interfaces in the structure. A value of the microwave-induced voltage strongly depends on a bias current and can be driven by a magnetic field. The rectification effect is discussed both in "Classical" terms of nonlinearity of the current-voltage characteristic and using a mechanism that involves the interplay between the spinpolarized current and magnetization dynamics in the magnetic tunnel structure. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Петр Дементьевич; Lee, C. G.; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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Low-temperature resistance and magnetoresistance hysteresis in polycrystalline (La0.5Eu0.5)(0.7)Pb0.3MnO3 / K. A. Shaykhutdinov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 5. - Ст. 53711, DOI 10.1063/1.3559303. - Cited References: 20. - This study was partially supported by the Russian Foundation for Basic Research, Project No. 08-02-00259a and the Lavrentyev Competition of the Young Scientists' Projects of the Siberian Branch of the Russian Academy of Sciences, Project No. 12. . - ISSN 0021-8979

РУБ Physics, Applied
Рубрики:
RESISTIVITY MINIMUM
MANGANITES
FILMS
Кл.слова (ненормированные):
Antiferromagnets -- Electrical resistances -- Ferromagnets -- Field dependence -- Inter-grain -- Lanthanum manganites -- Low temperatures -- Low-temperature resistance -- Polycrystalline -- Temperature dependence -- Tunnel contacts -- Antiferromagnetic materials -- Europium -- Ferromagnetic materials -- Ferromagnetism -- Hysteresis -- Lead -- Magnetic field effects -- Magnetoelectronics -- Magnetoresistance -- Magnets -- Manganese oxide -- Paramagnetism -- Superconducting materials -- Electric resistance
Аннотация: The behavior of temperature dependences of electrical resistance and magnetoresistance of polycrystalline substituted lanthanum manganite (La0.5Eu0.5)(0.7)Pb0.3MnO3 at low temperatures was thoroughly studied. A broad hysteresis was found in the field dependences of electrical resistance in the low-temperature region. Above 40 K, no hysteresis feature was observed. The temperature T = 40 K corresponds to the temperature of minimum electrical resistance and the temperature T-N to the antiferromagnet-paramagnet phase transition of the material of the intergrain boundaries. In this work we propose a model which explains the observed features of the rho(T) and rho(H) curves at temperatures below T-N by the formation of a network of ferromagnet-antiferromagnet-ferromagnet tunnel contacts. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559303]

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Держатели документа:
[Shaykhutdinov, K. A.
Popkov, S. I.
Semenov, S. V.
Balaev, D. A.
Dubrovskiy, A. A.
Sablina, K. A.
Sapronova, N. V.
Volkov, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Shaykhutdinov, K. A.
Balaev, D. A.
Dubrovskiy, A. A.
Volkov, N. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation
Siberian Federal University, Krasnoyarsk 660041, Russian Federation

Доп.точки доступа:
Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Popkov, S. I.; Попков, Сергей Иванович; Semenov, S. V.; Семенов, Сергей Васильевич; Balaev, D. A.; Балаев, Дмитрий Александрович; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Sablina, K. A.; Саблина, Клара Александровна; Sapronova, N. V.; Volkov, N. V.; Волков, Никита Валентинович
}
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Interlayer coupling in Co/Ge/Co trilayers / A. V. Kobyakov [et al.] // Solid State Phenomena. - 2011. - Vol. 168-169. - P. 273-276, DOI 10.4028/www.scientific.net/SSP.168-169.273 . - ISSN 1012-0394
Кл.слова (ненормированные):
electron magnetic resonance -- interlayer coupling -- magnetization -- magnetoresistance -- semiconductor spacer -- trilayer films -- electric resistance -- magnetic field effects -- magnetization -- magnetoelectronics -- magnetoresistance -- magnetic resonance -- magnetism -- magnetization -- magnetoresistance -- electron magnetic resonance -- exchange constants -- interlayer coupling -- semiconductor spacer -- squid magnetometry -- temperature dependent -- trilayer film -- trilayers -- magnetic resonance -- cobalt
Аннотация: The interlayer coupling in Co/Ge/Co trilayer films has been experimentally studied by the SQUID magnetometry and electron magnetic resonance. It has been found that the interlayer coupling is temperature-dependent. The values of the exchange constants have been determined.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Kobyakov, A. V.; Кобяков, Александр Васильевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Турпанов, Игорь Александрович; Li, L. A.; Ли, Людмила Алексеевна; Patrin, K. G.; Патрин, Константин Геннадьевич; Yushkov, V. I.; Юшков, Василий Иванович; Petrakovskaya, E. A.; Петраковская, Элеонора Анатольевна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg)
}
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Contributions from Inter-grain Boundaries to the Magneto-resistive Effect in Polycrystalline High-T (C) Superconductors. The Underlying Reason of Different Behavior for YBCO and BSCCO Systems / D. A. Balaev [et al.] // J. Supercond. Nov. Magn. - 2011. - Vol. 24, Is. 7. - P. 2129-2136, DOI 10.1007/s10948-011-1166-9. - Cited References: 30. - This work is supported by program N5 of RAS, project N7. . - ISSN 1557-1939

РУБ Physics, Applied + Physics, Condensed Matter
Рубрики:
HIGH-TEMPERATURE SUPERCONDUCTORS
   PHASE-SLIP
   TRANSPORT-PROPERTIES
   TRANSITION
   FIELD
   COMPOSITES
   BULK
   TAPES
   YBA2CU3O7-DELTA
   DISSIPATION
Кл.слова (ненормированные):
BSCCO -- YBCO -- Intergrain boundaries -- Magnetoresistance -- BSCCO -- Intergrain boundaries -- Magnetoresistance -- YBCO -- BSCCO -- BSCCO system -- Comparative studies -- High Tc superconductors -- High-field -- Inter-grain -- Irreversibility lines -- Magneto-resistive effect -- Polycrystalline -- Resistive transition -- Standard measurements -- Weak pinning -- YBCO -- Bismuth -- Electric resistance -- Grain boundaries -- High temperature superconductors -- Lead -- Magnetic fields -- Magnetoelectronics -- Magnetoresistance -- Magnetos -- Superconductivity -- Yttrium barium copper oxides -- Semiconductor metal boundaries
Аннотация: In order to clarify the mechanisms in charge of broadening of resistive transition R(T) in magnetic fields of bismuth-based polycrystalline high-T (C) superconductor (HTSC), a comparative study of Bi1.8Pb0.3Sr1.9Ca2Cu3O (x) (BSCCO) and YBa2Cu3O7-delta (YBCO) have been performed. Magnetoresistive effects and irreversibility line obtained from magnetic measurements have been studied. It was established that (1) for YBCO, the smooth part of R(T) dependence unambiguously corresponds to dissipation in the intergrain boundaries for arbitrary magnetic fields; (2) for polycrystalline BSCCO, the smooth part of R(T) dependences correspond to dissipation within intergrain boundary subsystem in the field range H <10(2) Oe only, while standard measurements of R(T) dependences in magnetic field range H > 10(2) Oe reflect the dissipation processes occurring both in intergrain boundary and HTSC grain subsystems; (3) for the high-field range, the contribution from intergrain boundaries of BSCCO can be distinguished from magnetoresistance R(H) dependences obtained at high enough current density on textured samples. It is proposed that various magneto-resistive properties of these classical HTSC systems are due comparatively weak pinning in BSCCO.

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Держатели документа:
[Balaev, D. A.
Popkov, S. I.
Semenov, S. V.
Bykov, A. A.
Dubrovskiy, A. A.
Shaikhutdinov, K. A.
Petrov, M. I.] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Balaev, D. A.
Popkov, S. I.
Sabitova, E. I.
Dubrovskiy, A. A.
Shaikhutdinov, K. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
L.V. Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Semenov, S. V.; Семенов, Сергей Васильевич; Bykov, A. A.; Быков, Алексей Анатольевич; Sabitova, E. I.; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Petrov, M. I.; Петров, Михаил Иванович
}
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Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry / N. V. Volkov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст. 123924. - P. , DOI 10.1063/1.3600056 . - ISSN 0021-8979
Кл.слова (ненормированные):
Channel switching -- Comparative analysis -- Fe films -- Fe layer -- Ferromagnetic films -- High temperature -- Hybrid structure -- Inversion layer -- Metal-insulator-semiconductors -- Negative magneto-resistance -- Planar geometries -- Positive magnetoresistance -- Schottky barriers -- Semiconductor substrate -- Temperature variation -- Weak localization -- Critical currents -- Electric resistance -- Ferromagnetic materials -- Geometry -- Magnetic fields -- Magnetoelectronics -- Magnetoresistance -- Metal insulator boundaries -- Metal insulator transition -- MIS devices -- Schottky barrier diodes -- Silicon -- Silicon compounds -- Switching circuits -- Transport properties -- Semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович
}
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Magnetoresistance of substituted lanthanum manganites La0.7Ca0.3MnO3 upon nonequilibrium overheating of carriers / K. A. Shaykhutdinov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 8. - Ст. 83711, DOI 10.1063/1.3573666. - Cited References: 15. - This study was partially supported by the Russian Foundation for Basic Research, project no. 08-02-00259a, and the Lavrent'ev's Competition of Young Scientists of the Siberian Branch of the RAS, project no. 12. . - ISSN 0021-8979

РУБ Physics, Applied

Кл.слова (ненормированные):
Field dependence -- Lanthanum manganites -- Low thermal conductivity -- Manganite materials -- Negative differential resistivity -- Non equilibrium -- Non-Linearity -- Nonequilibrium heating -- Polycrystalline -- Positive magnetoresistance -- Transport currents -- Electric resistance -- Electron gas -- Heating -- Lanthanum -- Lanthanum alloys -- Magnetic fields -- Magnetoelectronics -- Magnetoresistance -- Manganese oxide -- Manganites -- Thermal conductivity -- Current voltage characteristics
Аннотация: Current-voltage characteristics of the polycrystalline substituted lanthanum manganite La0.7Ca0.3MnO3 were experimentally studied at T - 77.4 K in magnetic fields up to 13 kOe. In these characteristics, a portion of negative differential resistivity was observed above a certain threshold value of critical current density j caused, in our opinion, by nonequilibrium heating of the electron gas due to low thermal conductivity of the manganite material. Because of the nonlinearity of the current-voltage characteristics, the field dependences of resistivity rho( H) appear extremely sensitive to the value of a transport current. In this case, the rho( H) dependences reveal both ordinary negative and positive magnetoresistance. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3573666]

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Держатели документа:
[Shaykhutdinov, K. A.
Semenov, S. V.
Popkov, S. I.
Balaev, D. A.
Bykov, A. A.
Dubrovskiy, A. A.
Petrov, M. I.
Volkov, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Shaykhutdinov, K. A.
Popkov, S. I.
Balaev, D. A.
Dubrovskiy, A. A.
Volkov, N. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Semenov, S. V.; Семенов, Сергей Васильевич; Popkov, S. I.; Попков, Сергей Иванович; Balaev, D. A.; Балаев, Дмитрий Александрович; Bykov, A. A.; Быков, Алексей Анатольевич; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Petrov, M. I.; Петров, Михаил Иванович; Volkov, N. V.; Волков, Никита Валентинович
}
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Relaxation of low-temperature magnetoresistance and magnetization of polycrystalline (La0.5Eu0.5)(0.7)Pb0.3MnO3 / K. A. Shaykhutdinov [et al.] // J. Phys. D. - 2011. - Vol. 44, Is. 25. - Ст. 255001, DOI 10.1088/0022-3727/44/25/255001. - Cited References: 34. - This work was partially supported by the Lavrentyev Competition of the Young Scientist's Projects of the Siberian Branch of the Russian Academy of Sciences, Project No 12. The authors are grateful to A D Balaev and V M Sosnin for useful discussions on the results. . - ISSN 0022-3727

РУБ Physics, Applied
Рубрики:
INSULATOR-METAL TRANSITION
   GRANULAR FILMS
   NANOPARTICLES
   PR0.7CA0.3MNO3
   PERCOLATION
   MANGANITES
Кл.слова (ненормированные):
Antiferromagnetic boundaries -- Characteristic value -- Ferromagnetic domains -- Ferromagnetic metal -- Lanthanum manganites -- Logarithmic law -- Low temperatures -- Magneto-resistive effect -- Polycrystalline -- Relative orientation -- Relaxation of magnetization -- Temperature fluctuation -- Time evolutions -- Time interval -- Tunnel magnetoresistance -- Antiferromagnetism -- Electric resistance -- Europium -- Ferromagnetic materials -- Ferromagnetism -- Grain boundaries -- Grain size and shape -- Lanthanum compounds -- Lead -- Magnetic domains -- Magnetic moments -- Magnetoelectronics -- Magnetoresistance -- Manganese oxide -- Magnetization
Аннотация: Hysteresis and relaxation of magnetoresistance and magnetization of substituted (La0.5Eu0.5)(0.7)Pb0.3MnO3 lanthanum manganite in a low-temperature region (< 40 K) are investigated. It is shown that at these temperature features of the magnetoresistive effect are determined mainly by spin-dependent tunnelling of carriers via insulating grain boundaries. As was demonstrated previously, the grain boundaries may be antiferromagnetically ordered. Therefore, relaxation of magnetization and resistance is determined by the processes of relative orientation of the magnetic moments of ferromagnetic domains neighbouring the antiferromagnetic boundary of ferromagnetic domains under the action of temperature fluctuations. It is shown that relaxation follows the logarithmic law within the time interval t similar to 10(2)-3x10(3) s. A comparison between time evolutions of the magnetic moment and resistance shows that magnetoresistance and magnetization are related as delta R = delta M-n, where n = 2.5. The obtained value n is close to the characteristic value n = 2 for tunnel magnetoresistance of granular ferromagnetic metal/insulator systems.

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Держатели документа:
[Shaykhutdinov, K. A.
Balaev, D. A.
Semenov, S. V.
Popkov, S. I.
Dubrovskiy, A. A.
Sapronova, N. V.
Volkov, N. V.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation

Доп.точки доступа:
Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Balaev, D. A.; Балаев, Дмитрий Александрович; Semenov, S. V.; Семенов, Сергей Васильевич; Popkov, S. I.; Попков, Сергей Иванович; Dubrovskiy, A. A.; Дубровский, Андрей Александрович; Sapronova, N. V.; Volkov, N. V.; Волков, Никита Валентинович
}
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10.

Magnetoresistance hysteresis of bulk textured Bi1.8Pb0.3Sr1.9Ca2Cu3Ox + Ag ceramics and its anisotropy / D. A. Balaev [et al.] // Physica C. - 2010. - Vol. 470, Is. 1. - P. 61-67, DOI 10.1016/j.physc.2009.10.007. - Cited References: 24. - Authors thanks to I.L. Belozerova for help in preparation of textured ceramics. This work was supported by program N5 of RAS, project N7, and in part in frames of young scientist projects of Siberian Federal University, project N6. . - ISSN 0921-4534

РУБ Physics, Applied
Рубрики:
CRITICAL-CURRENT ANISOTROPY
   HIGH-TEMPERATURE SUPERCONDUCTOR
   CRITICAL-CURRENT DENSITY
   MAGNETIC HYSTERESIS
   TAPES
   FLUX
   YBA2CU3O7-DELTA
   FIELD
Кл.слова (ненормированные):
Magnetoresistance -- Anisotropy -- Scaling -- Magnetization -- Bi2223 -- BSCCO -- Anisotropy -- Bi2223 -- BSCCO -- Magnetization -- Magnetoresistance -- Scaling -- Bi-2223 -- BSCCO -- External fields -- Granular superconductors -- Magnetic induction -- Parameters characterizing -- Anisotropy -- Calcium -- Ceramic materials -- Crystallites -- Electric resistance -- Hysteresis -- Lead -- Magnetic moments -- Magnetoelectronics -- Magnetoresistance -- Nanocrystalline alloys -- Silver -- Superconducting materials -- Superconductivity -- Magnetic field effects
Аннотация: Magnetoresistance of bulk textured Bi1.8Pb0.3Sr1.9Ca2Cu3Ox + Ag ceramics has been studied in the magnetic fields applied parallel and perpendicular to a-b planes of Bi2223 crystallites. Besides well known anisotropy of magnetoresistance of textured superconductors (R-H parallel to c > RH parallel to a-b), anisotropic hysteresis of R(H) dependences was investigated. Parameters characterizing hysteretic R(H) curves differ for the cases H parallel to c and H parallel to a-b. This behavior is explained within the model of a granular superconductor where the total magnetic induction in the intercrystallite boundaries is superposition of the external field and the magnetic field induced by dipole magnetic moments of neighbor crystallites. (C) 2009 Elsevier B.V. All rights reserved.

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Держатели документа:
[Gokhfeld, D. M.] RAS, SD, LV Kirensky Phys Inst, High Magnet Fields Lab, Krasnoyarsk 660036, Russia
[Balaev, D. A.
Semenov, S. V.
Shaykhutdinov, K. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
L.V. Kirensky Institute of Physics, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Popkov, S. I.; Попков, Сергей Иванович; Semenov, S. V.; Семенов, Сергей Васильевич; Bykov, A. A.; Быков, Алексей Анатольевич; Shaykhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Petrov, M. I.; Петров, Михаил Иванович
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