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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures
Место публикации : J. Magn. Magn. Mater. - 2018. - Vol. 451. - P.143-158. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2017.11.008
Примечания : Cited References: 31. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects № 17-02-00302, 16-42-242036 and 16-42-243046.
Ключевые слова (''Своб.индексиров.''): hybrid structures--magnetoresistance--magnetoimpedance--photo-magneto-electric effect--magnetoelectronics
Аннотация: Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Hsu, Hua-Shu, Chang Y.-Y., Chin Y.-Y., Lin H.-J., Chen C.-T., Sun S.-J., Zharkov S. M., Lin C.-R., Ovchinnikov S. G.
Заглавие : Exchange bias in graphitic C/Co composites
Место публикации : Carbon: Elsevier, 2017. - Vol. 114. - P.642-648. - ISSN 00086223 (ISSN), DOI 10.1016/j.carbon.2016.12.060
Примечания : Cited References: 54. - The authors would like to thank the Ministry of Science and Technology of the Republic of China, Taiwan, for financially supporting this research under Contract No. MOST 104-2112-M-153 -002 -MY3 (Hua-Shu Hsu), MOST 103-2112-M-213-004-MY3 (Hong-Ji Lin), and MOST 104-2112-M-390-001 (Shih-Jye Sun). We are thankful also to the President of Russia Program of support the leading scientific schools, grant NSh-7559,2016.2 (SGO).
Ключевые слова (''Своб.индексиров.''): carbides--carbon--dichroism--high resolution transmission electron microscopy--magnetoelectronics--transmission electron microscopy--x ray absorption--electronics production--exchange bias effects--experimental evidence--magnetic interactions--potential materials--spintronics application--theoretical modeling--x-ray magnetic circular dichroism--magnetic materials
Аннотация: The exchange bias (EB) effect, which is the shift of the hysteresis loop of a ferromagnet in direct contact with an antiferromagnet, is highly advantageous for the development of spintronics applications. Carbon (C) has been considered as a potential material in next generation electronics production as well as spintronics devices beyond silicon. Here we show experimental evidence for an EB in C/Co composites. The significant EB needs thermal annealing to occur. X-ray absorption spectra and transmission electron microscopy data of these samples reveal that Co carbides in as grown samples decompose and form graphitic C/Co interfaces after annealing. Using x-ray magnetic circular dichroism we have detected the C spins that are responsible for the EB. These results inspire a theoretical model to investigate the magnetic interactions in graphitic C/Co interfaces and interpret the observed results. © 2016 Elsevier Ltd
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Rautskii M. V., Eremin E. V., Patrin G. S., Kim P. D., Lee C. G.
Заглавие : Response of a manganite-based magnetic tunnel structure to microwave radiation
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.125-128. - ISBN 978, DOI 10.4028/www.scientific.net/SSP.190.125. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): magnetic tunnel structure--microwave detection effect--spintronics--current flowing--current-in-plane geometry--magnetic tunnels--magnetization dynamics--microwave detection--non-linearity--rectification effects--spin-polarized currents--voltage signals--magnetic materials--magnetoelectronics--manganese oxide--microwaves--magnetism
Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a significant voltage signal due to the rectification effect. The measurements were carried out using current-in-plane geometry with a current flowing parallel to the interfaces in the structure. A value of the microwave-induced voltage strongly depends on a bias current and can be driven by a magnetic field. The rectification effect is discussed both in "Classical" terms of nonlinearity of the current-voltage characteristic and using a mechanism that involves the interplay between the spinpolarized current and magnetization dynamics in the magnetic tunnel structure. В© (2012) Trans Tech Publications.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shaykhutdinov K. A., Popkov S. I., Semenov S. V., Balaev D. A., Dubrovskiy A. A., Sablina K. A., Sapronova N. V., Volkov N. V.
Заглавие : Low-temperature resistance and magnetoresistance hysteresis in polycrystalline (La0.5Eu0.5)(0.7)Pb0.3MnO3
Разночтения заглавия :авие SCOPUS: Low-temperature resistance and magnetoresistance hysteresis in polycrystalline (La0.5Eu0.5)0.7Pb 0.3MnO3
Место публикации : J. Appl. Phys.: AMER INST PHYSICS, 2011. - Vol. 109, Is. 5. - Ст.53711. - ISSN 0021-8979, DOI 10.1063/1.3559303
Примечания : Cited References: 20. - This study was partially supported by the Russian Foundation for Basic Research, Project No. 08-02-00259a and the Lavrentyev Competition of the Young Scientists' Projects of the Siberian Branch of the Russian Academy of Sciences, Project No. 12.
Предметные рубрики: RESISTIVITY MINIMUM
MANGANITES
FILMS
Ключевые слова (''Своб.индексиров.''): antiferromagnets--electrical resistances--ferromagnets--field dependence--inter-grain--lanthanum manganites--low temperatures--low-temperature resistance--polycrystalline--temperature dependence--tunnel contacts--antiferromagnetic materials--europium--ferromagnetic materials--ferromagnetism--hysteresis--lead--magnetic field effects--magnetoelectronics--magnetoresistance--magnets--manganese oxide--paramagnetism--superconducting materials--electric resistance
Аннотация: The behavior of temperature dependences of electrical resistance and magnetoresistance of polycrystalline substituted lanthanum manganite (La0.5Eu0.5)(0.7)Pb0.3MnO3 at low temperatures was thoroughly studied. A broad hysteresis was found in the field dependences of electrical resistance in the low-temperature region. Above 40 K, no hysteresis feature was observed. The temperature T = 40 K corresponds to the temperature of minimum electrical resistance and the temperature T-N to the antiferromagnet-paramagnet phase transition of the material of the intergrain boundaries. In this work we propose a model which explains the observed features of the rho(T) and rho(H) curves at temperatures below T-N by the formation of a network of ferromagnet-antiferromagnet-ferromagnet tunnel contacts. (C) 2011 American Institute of Physics. [doi:10.1063/1.3559303]
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kobyakov A. V., Patrin G. S., Turpanov I. A., Li L. A., Patrin K. G., Yushkov V. I., Petrakovskaya E. A., Rautskii M. V.
Заглавие : Interlayer coupling in Co/Ge/Co trilayers
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Solid State Phenomena. - 2011. - Vol. 168-169. - P.273-276. - ISSN 10120394 ; 9783037850213, DOI 10.4028/www.scientific.net/SSP.168-169.273
Ключевые слова (''Своб.индексиров.''): electron magnetic resonance--interlayer coupling--magnetization--magnetoresistance--semiconductor spacer--trilayer films--electric resistance--magnetic field effects--magnetization--magnetoelectronics--magnetoresistance--magnetic resonance--magnetism--magnetization--magnetoresistance--electron magnetic resonance--exchange constants--interlayer coupling--semiconductor spacer--squid magnetometry--temperature dependent--trilayer film--trilayers--magnetic resonance--cobalt
Аннотация: The interlayer coupling in Co/Ge/Co trilayer films has been experimentally studied by the SQUID magnetometry and electron magnetic resonance. It has been found that the interlayer coupling is temperature-dependent. The values of the exchange constants have been determined.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Popkov S. I., Semenov S. V., Bykov A. A., Sabitova E. I., Dubrovskiy A. A., Shaikhutdinov K. A., Petrov M. I.
Заглавие : Contributions from Inter-grain Boundaries to the Magneto-resistive Effect in Polycrystalline High-T (C) Superconductors. The Underlying Reason of Different Behavior for YBCO and BSCCO Systems
Разночтения заглавия :авие SCOPUS: Contributions from inter-grain boundaries to the magneto-resistive effect in polycrystalline high-TC superconductors. the underlying reason of different behavior for YBCO and BSCCO systems
Место публикации : J. Supercond. Nov. Magn: SPRINGER, 2011. - Vol. 24, Is. 7. - P2129-2136. - ISSN 1557-1939, DOI 10.1007/s10948-011-1166-9
Примечания : Cited References: 30. - This work is supported by program N5 of RAS, project N7.
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTORS
PHASE-SLIP
TRANSPORT-PROPERTIES
TRANSITION
FIELD
COMPOSITES
BULK
TAPES
YBA2CU3O7-DELTA
DISSIPATION
Ключевые слова (''Своб.индексиров.''): bscco--ybco--intergrain boundaries--magnetoresistance--bscco--intergrain boundaries--magnetoresistance--ybco--bscco--bscco system--comparative studies--high tc superconductors--high-field--inter-grain--irreversibility lines--magneto-resistive effect--polycrystalline--resistive transition--standard measurements--weak pinning--ybco--bismuth--electric resistance--grain boundaries--high temperature superconductors--lead--magnetic fields--magnetoelectronics--magnetoresistance--magnetos--superconductivity--yttrium barium copper oxides--semiconductor metal boundaries
Аннотация: In order to clarify the mechanisms in charge of broadening of resistive transition R(T) in magnetic fields of bismuth-based polycrystalline high-T (C) superconductor (HTSC), a comparative study of Bi1.8Pb0.3Sr1.9Ca2Cu3O (x) (BSCCO) and YBa2Cu3O7-delta (YBCO) have been performed. Magnetoresistive effects and irreversibility line obtained from magnetic measurements have been studied. It was established that (1) for YBCO, the smooth part of R(T) dependence unambiguously corresponds to dissipation in the intergrain boundaries for arbitrary magnetic fields; (2) for polycrystalline BSCCO, the smooth part of R(T) dependences correspond to dissipation within intergrain boundary subsystem in the field range H 10(2) Oe only, while standard measurements of R(T) dependences in magnetic field range H 10(2) Oe reflect the dissipation processes occurring both in intergrain boundary and HTSC grain subsystems; (3) for the high-field range, the contribution from intergrain boundaries of BSCCO can be distinguished from magnetoresistance R(H) dependences obtained at high enough current density on textured samples. It is proposed that various magneto-resistive properties of these classical HTSC systems are due comparatively weak pinning in BSCCO.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Varnakov S. N., Ovchinnikov S. G., Zharkov S. M.
Заглавие : Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry
Место публикации : J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст.123924. - P. - ISSN 0021-8979, DOI 10.1063/1.3600056
Ключевые слова (''Своб.индексиров.''): channel switching--comparative analysis--fe films--fe layer--ferromagnetic films--high temperature--hybrid structure--inversion layer--metal-insulator-semiconductors--negative magneto-resistance--planar geometries--positive magnetoresistance--schottky barriers--semiconductor substrate--temperature variation--weak localization--critical currents--electric resistance--ferromagnetic materials--geometry--magnetic fields--magnetoelectronics--magnetoresistance--metal insulator boundaries--metal insulator transition--mis devices--schottky barrier diodes--silicon--silicon compounds--switching circuits--transport properties--semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shaykhutdinov K. A., Semenov S. V., Popkov S. I., Balaev D. A., Bykov A. A., Dubrovskiy A. A., Petrov M. I., Volkov N. V.
Заглавие : Magnetoresistance of substituted lanthanum manganites La0.7Ca0.3MnO3 upon nonequilibrium overheating of carriers
Разночтения заглавия :авие SCOPUS: Magnetoresistance of substituted lanthanum manganites La 0.7Ca 0.3MnO 3 upon nonequilibrium overheating of carriers
Место публикации : J. Appl. Phys.: AMER INST PHYSICS, 2011. - Vol. 109, Is. 8. - Ст.83711. - ISSN 0021-8979, DOI 10.1063/1.3573666
Примечания : Cited References: 15. - This study was partially supported by the Russian Foundation for Basic Research, project no. 08-02-00259a, and the Lavrent'ev's Competition of Young Scientists of the Siberian Branch of the RAS, project no. 12.
Ключевые слова (''Своб.индексиров.''): field dependence--lanthanum manganites--low thermal conductivity--manganite materials--negative differential resistivity--non equilibrium--non-linearity--nonequilibrium heating--polycrystalline--positive magnetoresistance--transport currents--electric resistance--electron gas--heating--lanthanum--lanthanum alloys--magnetic fields--magnetoelectronics--magnetoresistance--manganese oxide--manganites--thermal conductivity--current voltage characteristics
Аннотация: Current-voltage characteristics of the polycrystalline substituted lanthanum manganite La0.7Ca0.3MnO3 were experimentally studied at T - 77.4 K in magnetic fields up to 13 kOe. In these characteristics, a portion of negative differential resistivity was observed above a certain threshold value of critical current density j caused, in our opinion, by nonequilibrium heating of the electron gas due to low thermal conductivity of the manganite material. Because of the nonlinearity of the current-voltage characteristics, the field dependences of resistivity rho( H) appear extremely sensitive to the value of a transport current. In this case, the rho( H) dependences reveal both ordinary negative and positive magnetoresistance. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3573666]
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shaykhutdinov K. A., Balaev D. A., Semenov S. V., Popkov S. I., Dubrovskiy A. A., Sapronova N. V., Volkov N. V.
Заглавие : Relaxation of low-temperature magnetoresistance and magnetization of polycrystalline (La0.5Eu0.5)(0.7)Pb0.3MnO3
Разночтения заглавия :авие SCOPUS: Relaxation of low-temperature magnetoresistance and magnetization of polycrystalline (La 0.5Eu 0.5) 0.7Pb 0.3MnO 3
Место публикации : J. Phys. D. - 2011. - Vol. 44, Is. 25. - Ст.255001. - ISSN 0022-3727, DOI 10.1088/0022-3727/44/25/255001
Примечания : Cited References: 34. - This work was partially supported by the Lavrentyev Competition of the Young Scientist's Projects of the Siberian Branch of the Russian Academy of Sciences, Project No 12. The authors are grateful to A D Balaev and V M Sosnin for useful discussions on the results.
Предметные рубрики: INSULATOR-METAL TRANSITION
GRANULAR FILMS
NANOPARTICLES
PR0.7CA0.3MNO3
PERCOLATION
MANGANITES
Ключевые слова (''Своб.индексиров.''): antiferromagnetic boundaries--characteristic value--ferromagnetic domains--ferromagnetic metal--lanthanum manganites--logarithmic law--low temperatures--magneto-resistive effect--polycrystalline--relative orientation--relaxation of magnetization--temperature fluctuation--time evolutions--time interval--tunnel magnetoresistance--antiferromagnetism--electric resistance--europium--ferromagnetic materials--ferromagnetism--grain boundaries--grain size and shape--lanthanum compounds--lead--magnetic domains--magnetic moments--magnetoelectronics--magnetoresistance--manganese oxide--magnetization
Аннотация: Hysteresis and relaxation of magnetoresistance and magnetization of substituted (La0.5Eu0.5)(0.7)Pb0.3MnO3 lanthanum manganite in a low-temperature region ( 40 K) are investigated. It is shown that at these temperature features of the magnetoresistive effect are determined mainly by spin-dependent tunnelling of carriers via insulating grain boundaries. As was demonstrated previously, the grain boundaries may be antiferromagnetically ordered. Therefore, relaxation of magnetization and resistance is determined by the processes of relative orientation of the magnetic moments of ferromagnetic domains neighbouring the antiferromagnetic boundary of ferromagnetic domains under the action of temperature fluctuations. It is shown that relaxation follows the logarithmic law within the time interval t similar to 10(2)-3x10(3) s. A comparison between time evolutions of the magnetic moment and resistance shows that magnetoresistance and magnetization are related as delta R
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Popkov S. I., Semenov S. V., Bykov A. A., Shaykhutdinov K. A., Gokhfeld D. M., Petrov M. I.
Заглавие : Magnetoresistance hysteresis of bulk textured Bi1.8Pb0.3Sr1.9Ca2Cu3Ox + Ag ceramics and its anisotropy
Коллективы :
Место публикации : Physica C. - 2010. - Vol. 470, Is. 1. - P.61-67. - ISSN 0921-4534, DOI 10.1016/j.physc.2009.10.007
Примечания : Cited References: 24. - Authors thanks to I.L. Belozerova for help in preparation of textured ceramics. This work was supported by program N5 of RAS, project N7, and in part in frames of young scientist projects of Siberian Federal University, project N6.
Предметные рубрики: CRITICAL-CURRENT ANISOTROPY
HIGH-TEMPERATURE SUPERCONDUCTOR
CRITICAL-CURRENT DENSITY
MAGNETIC HYSTERESIS
TAPES
FLUX
YBA2CU3O7-DELTA
FIELD
Ключевые слова (''Своб.индексиров.''): magnetoresistance--anisotropy--scaling--magnetization--bi2223--bscco--anisotropy--bi2223--bscco--magnetization--magnetoresistance--scaling--bi-2223--bscco--external fields--granular superconductors--magnetic induction--parameters characterizing--anisotropy--calcium--ceramic materials--crystallites--electric resistance--hysteresis--lead--magnetic moments--magnetoelectronics--magnetoresistance--nanocrystalline alloys--silver--superconducting materials--superconductivity--magnetic field effects
Аннотация: Magnetoresistance of bulk textured Bi1.8Pb0.3Sr1.9Ca2Cu3Ox + Ag ceramics has been studied in the magnetic fields applied parallel and perpendicular to a-b planes of Bi2223 crystallites. Besides well known anisotropy of magnetoresistance of textured superconductors (R-H parallel to c RH parallel to a-b), anisotropic hysteresis of R(H) dependences was investigated. Parameters characterizing hysteretic R(H) curves differ for the cases H parallel to c and H parallel to a-b. This behavior is explained within the model of a granular superconductor where the total magnetic induction in the intercrystallite boundaries is superposition of the external field and the magnetic field induced by dipole magnetic moments of neighbor crystallites. (C) 2009 Elsevier B.V. All rights reserved.
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