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1.
Admittance spectroscopy of
dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.]> // Mater. Sci. Semicond. Process. - 2021. -
Vol. 126
. - Ст. 105663,
DOI
10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors
--
Magnetoimpedance
--
Impurities
--
Implantation
Аннотация:
A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation
Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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2.
Advanced characterization of
FeNi-based films for the development of magnetic field sensors with tailored functional parameters / S. V. Komogortsev, I. G. Vazhenina, S. A. Kleshnina [et al.]> // Sensors. - 2022. -
Vol. 22
,
Is. 9
. - Ст. 3324,
DOI
10.3390/s22093324. - Cited References: 35. - This research was funded by the Russian Science Foundation (RSF), project no. 22-29-00980, https://rscf.ru/en/project/22-29-00980/ (accessed on 20 March 2022) . - ISSN 1424-8220
Кл.слова (ненормированные):
magnetic field sensors
--
thin films
--
multilayered structures
--
magnetic anisotropy
--
anisotropy distribution
--
ferromagnetic resonance
--
magnetoimpedance
--
high frequency applications
Аннотация:
Magnetometry and ferromagnetic resonance are used to quantitatively study magnetic anisotropy with an easy axis both in the film plane and perpendicular to it. In the study of single-layer and multilayer permalloy films, it is demonstrated that these methods make it possible not only to investigate the average field of perpendicular and in-plane anisotropy, but also to characterize their inhomogeneity. It is shown that the quantitative data from direct integral and local measurements of magnetic anisotropy are consistent with the direct and indirect estimates based on processing of the magnetization curves. The possibility of estimating the perpendicular magnetic anisotropy constant from the width of stripe domains in a film in the transcritical state is demonstrated. The average in-plane magnetic anisotropy field of permalloy films prepared by magnetron sputtering onto a Corning glass is almost unchanged with the thickness of a single-layer film. The inhomogeneity of the perpendicular anisotropy field for a 500 nm film is greater than that for a 100 nm film, and for a multilayer film with a total permalloy thickness of 500 nm, it is greater than that for a homogeneous film of the same thickness.
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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Institute of Physics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Magnetism of Solid State, Institute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federation
Laboratory of Advanced Magnetic Materials, Institute of Metal Physics UD RAS, Ekaterinburg, 620108, Russian Federation
Доп.точки доступа:
Komogortsev, S. V.; Комогорцев, Сергей Викторович; Vazhenina, I. G.; Важенина, Ирина Георгиевна; Kleshnina, S. A.; Клешнина, Софья Андреевна; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Lepalovskij, V. N.; Pasynkova, A. A.; Svalov, A. V.
}
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3.
Anisotropy of the
magnetoimpedance
in hybrid hetero structure FeNi/SiO2/p-Si / A. V. Lukyanenko [et al.]> //
Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P. 111. - This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043
Материалы конференции
Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Gustaitsev, A. O.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Volkov, N. V.; Волков, Никита Валентинович; "Spin physics, spin chemistry, and spin technology", Internnational conference(2015 ; Jun. ; 1-5 ; Saint Peterburg); Физико-технический институт им. А.Ф. Иоффе РАН; Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН; "Инно-мир", центр межрегионального инновационного развития
}
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4.
Bias-voltage-controlled ac and
dc magnetotransport phenomena in hybrid structures / N. V. Volkov [et al.]> //
J. Magn. Magn. Mater. - 2015. -
Vol. 383
. - P. 69-72,
DOI
10.1016/j.jmmm.2014.11.014. - Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043. . - ISSN 0304-8853
Перевод заглавия:
Контролируемые напряжением смещения магнитотранспортные явления, наблюдаемые на постоянном и переменном токе в гибридных структурах
РУБ
Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SILICON
SPINTRONICS
FIELD
Кл.слова (ненормированные):
Spintronics
--
Hybrid structures
--
Magnetoresistance
--
Magnetoimpedance
--
Photoinduced magnetoresistance
Аннотация:
We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.
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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Ministry of Education and Science of the Russian Federation [02.G25.31.0043]; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
}
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5.
Effect of magnetic
and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device / D. Smolyakov, A. Tarasov, L. Shanidze [et al.]> // Phys. Status Solidi A. - 2022. -
Vol. 219
. Is. 1. - Ст. 2100459,
DOI
10.1002/pssa.202100459. - Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886 . - ISSN 1862-6300. - ISSN 1862-6319
Перевод заглавия:
Влияние магнитного и электрического полей на сопротивление на переменном токе транзисторного устройства на основе кремния на изоляторе
РУБ
Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
NANOSTRUCTURES
Кл.слова (ненормированные):
impurities states
--
magnetoimpedance
--
magnetoresistance
--
pseudo-MOSFET
--
semiconductors
--
SOI structure
--
transistor
Аннотация:
Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated.
Magnetoimpedance
value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.
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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Pr Svobodny 79, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50, Krasnoyarsk 660036, Russia.
Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, Lev; Шанидзе, Лев Викторович; Bondarev, I. A.; Бондарев, Илья Александрович; Baron, F. A.; Барон, Филипп Алексеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
}
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6.
Electrical properties of
the polycrystalline BiFe0.95Co0.05O3 films / O. B. Romanova, V. V. Kretinin, S. S. Aplesnin [et al.]> // Phys. Solid State. - 2021. -
Vol. 63
. Is. 6. - P. 897-903,
DOI
10.1134/S1063783421060184. - Cited References: 34. - This study was supported by the Russian Foundation for Basic Research and the Belarusian Republican Foundation for Basic Research, project no. 20-52-00005 . - ISSN 1063-7834. - ISSN 1090-6460
РУБ
Physics, Condensed Matter
Рубрики:
BiFeO3 THIN-FILMS
PHASE-SEPARATION
CRYSTAL
MODEL
Кл.слова (ненормированные):
semiconductor films
--
magnetoresistance
--
magnetoimpedance
--
magnetization
Аннотация:
Semiconductor BiFe0.95Co0.05O3 thin-film compounds have been synthesized by a burst technique. The film surface morphology and the effect of electronic doping via substitution of cobalt ions for trivalent iron on the optical, magnetic, and kinetic properties have been investigated in the temperature range of 77-600 K in magnetic fields of up to 12 kOe. Two electron relaxation channels have been found in the impedance spectrum in the frequency range of 0.1-1000 kHz. The negative magnetoresistance in the anomalous magnetization region and the maximum
magnetoimpedance
in the vicinity of the surface phase transition have been established. Using the Hall measurements, carrier types dominating in the magnetoresistance and
magnetoimpedance
effects have been determined. The magnetization anomalies have been explained in the model of superparamagnetic clusters and the magnetoresistance, by the carrier scattering by spin fluctuations.
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Публикация на русском языке
Электрофизические свойства поликристаллических пленок BiFe0.95Co0.05O3 [Текст] / О. Б. Романова, В. В. Кретинин, С. С. Аплеснин [и др.] // Физ. тверд. тела. - 2021. - Т. 63 Вып. 6. - С. 721-728
Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.
Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS.
Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Kretinin, V. V.; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Udod, L. V.; Удод, Любовь Викторовна; Yanushkevich, K. I.; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarusian Republican Foundation for Basic Research [20-52-00005]
}
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7.
Impedance and
magnetoimpedance
in Mn/SiO2/P-Si HYBRID structures [Текст] / N. V. Dorofeev [и др.]> //
Moscow int. Symp. on Magnet. (MISM-2014) : Book of abstracts. - 2014. - Ст. 1PO-K-3. - P. 536 . - ISBN 978-5-91978-025-0
Материалы конференции
,
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Доп.точки доступа:
Dorofeev, N. V.; Дорофеев, Николай Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Volkov, N. V.; Волков, Никита Валентинович; Moscow International Symposium on Magnetism(6 ; 2014 ; 29 June-3 July ; Moscow); Московский государственный университет им. М.В. Ломоносова
}
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8.
Influence of Induced
Electrical Polarization on the Magnetoresistance and
Magnetoimpedance
in the Spin‐Disordered TmxMn1−xS Solid Solution / S. S. Aplesnin [et al.]> // Phys. Status Solidi B. - 2019. -
Vol. 256
,
Is. 10
. - Ст. 1900043,
DOI
10.1002/pssb.201900043. - Cited References: 25 . - ISSN 0370-1972
Кл.слова (ненормированные):
Debye model
--
infrared spectroscopy
--
magnetoresistance,
magnetoimpedance
--
thermal expansion coefficient
--
thermionic current
Аннотация:
The transport properties of the TmxMn1–xS (x ≤ 0.15) solid solutions in the temperature range of 200–600 K have been investigated. The temperatures of lattice polaron pinning accompanied by the lattice strain, condensation of the infrared modes, and thermionic emission have been determined. The change of the carrier sign with temperature has been found from the Hall coefficient data and dragging of electrons by phonons, from the thermopower data. The dependence of the magnetoresistance on the concentration, current, and voltage has been established from the I–V characteristics measured without field and in an applied magnetic field of H = 8 kOe in the temperature range of 300–500 K. The functional temperature dependence of the carrier relaxation time has been determined using the impedance data. The concentration region with the
magnetoimpedance
sign varying with frequency and temperature has been found. The increase in the relaxation time of the induced electric polarization with increasing concentration of thulium ions has been observed. The experimental data have been interpreted in the framework of the Debye and Maxwell–Wagner models, as well as the theoretical model for the Rashba spin–orbit interaction.
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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50, bld. 38, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, “Krasnoyarskiy rabochiy” Ave., 31, Krasnoyarsk, 660037, Russian Federation
Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Kharkov, A. M.; Masyugin, A. N.; Kretinin, V. V.; Fisenko, O. B.; Gorev, M. V.; Горев, Михаил Васильевич
}
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9.
Influence of metal
magnetic state and metal-insulator-semiconductor structure composition on
magnetoimpedance
effect caused by interface states / D. A. Smolyakov [et al.]> // Thin Solid Films. - 2019. -
Vol. 671
. - P. 18-21,
DOI
10.1016/j.tsf.2018.12.026. - Cited References: 15. - This study was supported by the Russian Foundation for Basic Research , project no. 18-32-00035 and supported in part by the Russian Foundation for Basic Research , Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-243022, and the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences , project II.8.70, and the Presidium of the Russian Academy of Sciences , Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies». . - ISSN 0040-6090
Кл.слова (ненормированные):
Magnetoimpedance
--
Spintronics
--
Metal/insulator/semiconductor structures
--
Nanosized semiconductors
Аннотация:
This article presents the results of a study of the transport properties of metal/insulator/semiconductor (MIS) hybrid structures in alternating current (ac) mode. We prepared a series of samples with different layers of metal, insulator, and semiconductor. We prepared a series of samples with different layers of metal, insulator and semiconductor. Ferromagnetic Fe and non-magnetic Cu and Mn were chosen as metals, the insulators were SiO2 and Al2O3, and n- and p-type Si substrates were used as semiconductors. Temperature dependence of the real part of the impedance showed peculiar peaks below 40К for different combinations of metals, insulators and semiconductors. For all samples the effect of the magnetic field on the transport properties was studied. At low temperatures, the magnetic field shifts peaks toward higher temperatures. Metal magnetic state does not significantly affect this phenomenon. Changing the type of the insulator and its thickness also did not cause any significant effect. However, the effect was observed for samples with different composition. Moreover, the type of conductivity of the substrate, as well as the type of metal, determines the value of
magnetoimpedance
. The main role in the
magnetoimpedance
effect is played by recharge of the energy states localized at the insulator/semiconductor interface. This mechanism allows obtaining a MI effect even in “nonmagnetic” MIS structures;
magnetoimpedance
can be either positive or negative, depending on temperature and frequency. We suggest that the observed ac magnetotransport phenomena could be used for creating magnetic field sensors, working on new principles.
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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Masyugin, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Bondarev, I. A.; Бондарев, Илья Александрович; Kosyrev, N. N.; Косырев, Николай Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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10.
Magnetic properties of
FeNi/Cu-based lithographic rectangular multilayered elements for
magnetoimpedance
applications / G. Yu. Melnikov, I. G. Vazhenina, R. S. Iskhakov [et al.]> // Sensors. - 2023. -
Vol. 23
,
Is. 13
. - Ст. 6165,
DOI
10.3390/s23136165. - Cited References: 72. - This research was funded by the Russian Science Foundation (RSF), project no. 22-29-00980, https://rscf.ru/project/22-29-00980/ (accessed on 1 July 2023). - Authors acknowledge the possibility to use the Krasnoyarsk Regional Center of Research Equipment of the Federal Research Center “Krasnoyarsk Science Center SB RAS” for ferromagnetic resonance studies. We thank A.A. Yuvchenko and V.N. Lepalovskij for special support. The authors wish to thank the anonymous referees for their comments and suggestions . - ISSN 1424-8220
Кл.слова (ненормированные):
magnetic multilayers
--
permalloy
--
magnetic properties
--
ferromagnetic resonance
--
spin-wave resonance
--
magnetoimpedance
--
magnetic field sensors
Аннотация:
The rectangular elements in
magnetoimpedance
(MI) configuration with a specific nanocomposite laminated structure based on FeNi and Cu layers were prepared by lift-off lithographic process. The properties of such elements are controlled by their shape, the anisotropy induced during the deposition, and by effects associated with the composite structure. The characterizations of static and dynamic properties, including MI measurements, show that these elements are promising for sensor applications. We have shown that competition between the shape anisotropy and the in-plane induced anisotropy of the element material is worth taking into account in order to understand the magnetic behavior of multilayered rectangular stripes. A possibility of the dynamic methods (ferromagnetic and spin-wave resonance) to describe laminated planar elements having a non-periodic modulation of both structure and magnetic parameters of a system is demonstrated. We show that the multilayered structure, which was originally designed to prevent the development of a “transcritical” state in magnetic layers and to reach the required thickness, also induces the effects that hinder the achievement of the goal, namely an increase in the perpendicular magnetic anisotropy energy.
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Держатели документа:
Institute of Natural Sciences and Mathematics, Ural Federal University, 620002 Ekaterinburg, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
School of Space and Information Technology, Siberian Federal University, 660041 Krasnoyarsk, Russia
Applied Physics Department, Reshetnev Siberian State University of Science and Technology, 660037 Krasnoyarsk, Russia
Доп.точки доступа:
Melnikov, Grigory Yu.; Vazhenina, I. G.; Важенина, Ирина Георгиевна; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Boev, N. M.; Боев, Никита Михайлович; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Svalov, Andrey V.; Kurlyandskaya, Galina V.
}
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11.
Magnetic-field-driven electron transport
in ferromagnetic/ insulator/ semiconductor hybrid structures / N. V. Volkov [et al.]> // J. Magn. Magn. Mater. - 2017. -
Vol. 440
: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 140-143,
DOI
10.1016/j.jmmm.2016.12.092. - Cited References:27. - This study was supported by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund, Project nos. 16-42-242036 and 16-42-243046, the Russian Ministry of Education and Science, state assignment no. 16.663.2014K. . - ISSN 0304-8853. - ISSN 1873-4766
РУБ
Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SPINTRONICS
BREAKDOWN
SILICON
SPIN
Кл.слова (ненормированные):
Hybrid structures
--
Magnetoresistance
--
Magnetoimpedance
--
Photovoltage
Аннотация:
Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic
magnetoimpedance
(MI), dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed 10(6)% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral device reaches the value of 10(4)% in a field of 1 T. We believe that in case with the Schottky diode MR and MI effects are originate from magnetic field influence on impact ionization process by two different ways. First, the trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon to a higher energy. As a result, the activation energy for impact ionization significantly increases and consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in magnetic field) can be responsible for giant LMPE.
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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-242036, 16-42-243046]; Russian Ministry of Education and Science [16.663.2014K]; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
}
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12.
Magnetic-field-driven electron transport
in ferromagnetic/insulator/semiconductor hybrid structures / N. V. Volkov [et al.]> //
VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. I4.4. - P. 214. - References: 3 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
hybrid structures
--
magnetoresistance
--
magnetoimpedance
Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
Нет сведений об экземплярах
}
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13.
Magneto-transport phenomena in
metal/SiO2/n(p)-Si hybrid structures / N. V. Volkov [et al.]> // J. Magn. Magn. Mater. - 2018. -
Vol. 451
. - P. 143-158,
DOI
10.1016/j.jmmm.2017.11.008. - Cited References: 31. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects № 17-02-00302, 16-42-242036 and 16-42-243046. . - ISSN 0304-8853
Кл.слова (ненормированные):
Hybrid structures
--
Magnetoresistance
--
Magnetoimpedance
--
Photo-magneto-electric effect
--
Magnetoelectronics
Аннотация:
Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic
magnetoimpedance
, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.
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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Bondarev, I. A.; Бондарев, Илья Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
}
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14.
Magnetoimpedance
and magnetocapacitance
of anion-substituted manganese chalcogenides / S. S. Aplesnin [et al.]> // J. Appl. Phys. - 2017. -
Vol. 121
,
Is. 7
. - Ст. 075701,
DOI
10.1063/1.4976097. - Cited References: 26. - The reported study was funded by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project No. 17-42-240079 r_sibir_a. This study was supported by the Russian Foundation for Basic Research project No. 16-52-00045 Bel_a and government work No. 114090470016. . - ISSN 0021-8979
Кл.слова (ненормированные):
Activation energy
--
Chalcogenides
--
Inorganic compounds
--
Manganese
--
Neel temperature
--
Carrier relaxation time
--
Impedance spectroscopy
--
Low and high frequencies
--
Magnetically ordered state
--
Magneto-resistive effect
--
Magnetocapacitance
--
Pyroelectric current
--
Temperature dependence
--
Temperature distribution
Аннотация:
The magnetoresistive effect in MnSe1−XTeX manganese chalcogenides with a substitute concentration of X = 0.1 is studied by impedance spectroscopy. The
magnetoimpedance
above the Neel temperature is found. The obtained experimental data are explained in the framework of the model of existence of magnetic nanoareas of two types. Two activation energies in the low- and high-frequency regions are determined from the frequency and temperature dependences of the permittivity described in the Debye model. The extrema found in the temperature dependence of the pyroelectric current are consistent with the maxima in the temperature dependence of magnetization. Temperature dependence of the carrier relaxation time is established. The magnetocapacitance of the MnSe1−XTeX solid solutions is found. The change in the carrier type above the Neel temperature and the temperature of the transition to the magnetically ordered state in the MnTe nanoarea is established.
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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, M. F. Reshetnev Corporation, Krasnoyarsk, Russian Federation
Scientific-Practical Materials Research Center NAS, Minsk, Belarus
Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Romanova, O. B.; Романова, Оксана Борисовна; Korolev, V. V.; Sitnikov, M. N.; Yanushkevich, K. I.
}
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15.
Magnetoimpedance
Effect in
a SOI-Based Structure / D. A. Smolyakov [et al.]> // Semiconductors. - 2019. -
Vol. 53
,
Is. 14
. - P. 98-100,
DOI
10.1134/S1063782619140215. - Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”. . - ISSN 1063-7826. - ISSN 1090-6479
Перевод заглавия:
Эффект магнитоимпеданса в структуре на основе КНИ
Рубрики:
NANOSTRUCTURE DEVICES
Кл.слова (ненормированные):
magnetoimpedance
--
spintronics
--
silicone on insulator
--
nanosized semiconductors
--
interface states
Аннотация:
This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.
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РИНЦ
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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036 Russia
Siberian State University of Science and Technology, Krasnoyarsk, 660014 Russia
Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич
}
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16.
Magnetoimpedance
in manganese
sulfide substituted with lutetium / M. N. Sitnikov, S. S. Aplesnin, A. M. Kharkov [et al.]> // Phys. Solid State. - 2023. -
Vol. 65
,
Is. 2
. - P. 211-217,
DOI
10.21883/PSS.2023.02.55402.527. - Cited References: 28. - This study was supported by a grant of the President of the Russian Federation No. MK-620.2021.1.2 . - ISSN 1063-7834. - ISSN 1090-6460
Кл.слова (ненормированные):
Semiconductors
--
impedance
--
magnetoimpedance
--
attenuation of ultrasound
Аннотация:
The components of the impedance, the impedance of the LuxMn1–xS (x ˃ 0.2) solid solution in the temperature range of 80-500 K and the frequency of 100-106 Hz were studied. A change in the sign of the
magnetoimpedance
in concentration and temperature is found. The contribution of the reactive and active components to the
magnetoimpedance
is determined. The correlation of
magnetoimpedance
temperatures with the temperatures of the maximum attenuation of ultrasound and electrosound has been established. The frequency dependences of the reactive part of the impedance are described in the Cole-Cole model.
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Публикация на русском языке
Магнитоимпеданс в сульфиде марганца, замещенного лютецием [Текст] / М. Н. Ситников, С. С. Аплеснин, А. М. Харьков [и др.] // Физ. тверд. тела. - 2023. - Т. 65 Вып. 2. - С. 219-225
Держатели документа:
Siberian State University of Science and Technology, Krasnoyarsk, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
Доп.точки доступа:
Sitnikov, M. N.; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Kharkov, A. M.; Abdelbaki, H.; Zelenov, F. V.
}
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17.
Magnetoimpedance
of Silicon-Based
Hybrid Structures with a Schottky Barrier / A. O. Gustaitsev [et al.]> //
VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P1.31. - P. 92. - References: 3 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
hybrid structures
--
Schottky barrier
--
Schottky diode
--
magnetoimpedance
--
spintronic devices
Доп.точки доступа:
Gustaitsev, A. O.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Volkov, N. V.; Волков, Никита Валентинович; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
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}
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18.
Magnetoimpedance
of the
Fe/SiO2/N-SiI hybrid structure under optical irradiation [Текст] / A. S. Tarasov [и др.]> //
Moscow Int. Symp. on Magnet. (MISM-2014) : Book of abstracts. - 2014. - Ст. 1PO-K-15. - P. 548 . - ISBN 978-5-91978-025-0
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Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Bondarev, I. A.; Бондарев, Илья Александрович; Volkov, N. V.; Волков, Никита Валентинович; Moscow International Symposium on Magnetism(6 ; 2014 ; 29 June-3 July ; Moscow); Московский государственный университет им. М.В. Ломоносова
}
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19.
Magnetoimpedance
, Jahn-Teller transitions
upon electron doping of manganese sulfide / S. S. Aplesnin, M. N. Sitnikov, A. M. Kharkov [et al.]> // J. Magn. Magn. Mater. - 2020. -
Vol. 513
. - Ст. 167104,
DOI
10.1016/j.jmmm.2020.167104. - Cited References: 42. - This study was supported by youth project_Reshetnev Siberian State University of Science and Technology . - ISSN 0304-8853
Кл.слова (ненормированные):
Impedance
--
Prehistory of magnetic susceptibility
--
Magnetoimpedance
--
Fermi glass
--
Orbital magnetic moment
--
Electron paramagnetic resonance
--
IR spectra
--
JT transitions
--
Conductivity
Аннотация:
The effect of a magnetic field on the electrical and magnetic properties of manganese sulfide upon electron doping in the YbxMn1−xS (0.05 ˂ x ˂ 0.2) compound has been investigated. The change in the conductivity type from the Poole–Frenkel to Mott law have been established using the I–V characteristics and the change in the carrier type upon temperature and concentration variations has been observed. The effect of the sample prehistory on the conductivity, impedance, and magnetic susceptibility under the action of a magnetic field in a wide temperature range has been found. The trivalent state of ytterbium ions has been determined using the electron paramagnetic resonance study. The dynamic JT transitions temperature are found by IR method and by the electron paramagnetic resonance. Anomalies of carrier mobility and magneto-impedance were found in the vicinity of the Jahn-Teller transitions. The experimental data are explained by the localization of electrons with the formation of the interstitial orbital momenta and an orbital momentum into the site. The sample prehistory is related to the lifting of the orbital angular moments degeneracy and the direction of the axis of distortion of the octahedrons in a magnetic field.
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Держатели документа:
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok, 50, Krasnoyarsk, 660036, Russian Federation
Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Kharkov, A. M.; Konovalov, S. O.; Vorotinov, A. M.; Воротынов, Александр Михайлович
}
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20.
Magnetoresistance and IR
spectrum of impurity states in the Ce3Fe5O12 film / S. S. Aplesnin, A. N. Masyugin, V. V. Kretinin [et al.]> // Phys. Solid State. - 2021. -
Vol. 63
,
Is. 2
. - P. 242-247,
DOI
10.1134/S1063783421020025. - Cited References: 28. - This study was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-240001 “Inversion of the Sign of Magnetoelectric Tensor Components with Temperature in the Neodymium-Doped Bismuth Iron Garnet Films” . - ISSN 1063-7834
Кл.слова (ненормированные):
magnetoimpedance
--
IR spectroscopy
--
cerium iron garnet
--
thin films
Аннотация:
In polycrystalline cerium iron garnet films, the gap in the electron excitation spectrum and electronic transitions between di- and tetravalent iron and cerium impurity ions have been established from the IR absorption spectra. The temperatures of delocalization of the ferrous states of iron have been found from the impedance spectroscopy, electrical resistance, and IR spectroscopy data. The difference between the ac and dc magnetoresistances has been established and explained using a model of a dielectrically inhomogeneous medium.
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Публикация на русском языке
Магнетосопротивление и ИК-спектр примесных состояний в пленке Ce3Fe5O12 [Текст] / С. С. Аплеснин, А. Н. Масюгин, В. В. Кретинин [и др.] // Физ. тверд. тела. - 2021. - Т. 63 Вып. 2. - С. 218-223
Держатели документа:
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Masyugin, A. N.; Kretinin, V. V.; Konovalov, S. O.; Shestakov, N. P.; Шестаков, Николай Петрович
}
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