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Magnetoimpedance, Jahn-Teller transitions upon electron doping of manganese sulfide / S. S. Aplesnin, M. N. Sitnikov, A. M. Kharkov [et al.] // J. Magn. Magn. Mater. - 2020. - Vol. 513. - Ст. 167104, DOI 10.1016/j.jmmm.2020.167104. - Cited References: 42. - This study was supported by youth project_Reshetnev Siberian State University of Science and Technology . - ISSN 0304-8853
Кл.слова (ненормированные):
Impedance -- Prehistory of magnetic susceptibility -- Magnetoimpedance -- Fermi glass -- Orbital magnetic moment -- Electron paramagnetic resonance -- IR spectra -- JT transitions -- Conductivity
Аннотация: The effect of a magnetic field on the electrical and magnetic properties of manganese sulfide upon electron doping in the YbxMn1−xS (0.05 ˂ x ˂ 0.2) compound has been investigated. The change in the conductivity type from the Poole–Frenkel to Mott law have been established using the I–V characteristics and the change in the carrier type upon temperature and concentration variations has been observed. The effect of the sample prehistory on the conductivity, impedance, and magnetic susceptibility under the action of a magnetic field in a wide temperature range has been found. The trivalent state of ytterbium ions has been determined using the electron paramagnetic resonance study. The dynamic JT transitions temperature are found by IR method and by the electron paramagnetic resonance. Anomalies of carrier mobility and magneto-impedance were found in the vicinity of the Jahn-Teller transitions. The experimental data are explained by the localization of electrons with the formation of the interstitial orbital momenta and an orbital momentum into the site. The sample prehistory is related to the lifting of the orbital angular moments degeneracy and the direction of the axis of distortion of the octahedrons in a magnetic field.

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Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok, 50, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Kharkov, A. M.; Konovalov, S. O.; Vorotinov, A. M.; Воротынов, Александр Михайлович
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Optically tunable magnetoimpedance in Fe/Al2O3/p-Si / M. V. Rautskii, D. A. Smolyakov, I. A. Bondarev [et al.] // The Fifth Asian School-Conference on Physics and Technology of Nanostructured Materials : Proceedings. - VLadivostok : Dalnauka Publishing, 2020. - Ст. IV.31.11p. - P. 120. - The work was partially supported by the Ministry of Education and Science, Fundamental research program of the Presidium of the RAS no. 32 «Nanostructures: physics, chemistry, biology, basics of technologies». The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project № 18-42-243022. . - ISBN 978-5-8044-1698-1

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Доп.точки доступа:
Rautskii, M. V.; Рауцкий, Михаил Владимирович; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Bondarev, I. A.; Бондарев, Илья Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Masyugin, A. N.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Kosyrev, N. N.; Косырев, Николай Николаевич; Volkov, N. V.; Волков, Никита Валентинович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Asian School-Conference on Physics and Technology of Nanostructured Materials(5 ; 2020 ; 30 Jul - 3 Aug ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(5 ; 2013 ; 30 июля - 3 авг. ; Владивосток)
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Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect / D. A. Smolyakov, A. S. Tarasov, M. A. Bondarev [et al.] // Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст. 105663, DOI 10.1016/j.mssp.2021.105663. - Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) . - ISSN 1369-8001
Кл.слова (ненормированные):
Semiconductors -- Magnetoimpedance -- Impurities -- Implantation
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.

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Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences660036, Russian Federation
Lobachevsky State University, Nizhny Novgorod603950, Russian Federation

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, M. A.; Бондарев, Михаил Александрович; Nikolskaya, A. A.; Vasiliev, V. K.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович
}
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Magnetoresistance and magnetoimpedance in LuxMn1-xS solid solutions paramagnetic state / S. S. Aplesnin [и др.] // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст. K.O5. - P. 305-306. - Cited References: 2. - The reported study was funded by Russian Foundation for Basic Research No. 18-32-00079 mol_a, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science No. 18-42 240001 r_a, tothe research project: ”Inversion ofthe sign ofthe components ofthe magnetoelectrictensor onthe temperature in films of bismuth garnet ferrite replaced by neodymium” . - ISBN 978-5-9500855-7-4

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Begisheva, O. B.; Sitnikov, M. N.; Yukhno, M. Yu.; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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Influence of Induced Electrical Polarization on the Magnetoresistance and Magnetoimpedance in the Spin‐Disordered TmxMn1−xS Solid Solution / S. S. Aplesnin [et al.] // Phys. Status Solidi B. - 2019. - Vol. 256, Is. 10. - Ст. 1900043, DOI 10.1002/pssb.201900043. - Cited References: 25 . - ISSN 0370-1972
Кл.слова (ненормированные):
Debye model -- infrared spectroscopy -- magnetoresistance, magnetoimpedance -- thermal expansion coefficient -- thermionic current
Аннотация: The transport properties of the TmxMn1–xS (x ≤ 0.15) solid solutions in the temperature range of 200–600 K have been investigated. The temperatures of lattice polaron pinning accompanied by the lattice strain, condensation of the infrared modes, and thermionic emission have been determined. The change of the carrier sign with temperature has been found from the Hall coefficient data and dragging of electrons by phonons, from the thermopower data. The dependence of the magnetoresistance on the concentration, current, and voltage has been established from the I–V characteristics measured without field and in an applied magnetic field of H = 8 kOe in the temperature range of 300–500 K. The functional temperature dependence of the carrier relaxation time has been determined using the impedance data. The concentration region with the magnetoimpedance sign varying with frequency and temperature has been found. The increase in the relaxation time of the induced electric polarization with increasing concentration of thulium ions has been observed. The experimental data have been interpreted in the framework of the Debye and Maxwell–Wagner models, as well as the theoretical model for the Rashba spin–orbit interaction.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50, bld. 38, Krasnoyarsk, 660036, Russian Federation
Reshetnev Siberian State University of Science and Technology, “Krasnoyarskiy rabochiy” Ave., 31, Krasnoyarsk, 660037, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Kharkov, A. M.; Masyugin, A. N.; Kretinin, V. V.; Fisenko, O. B.; Gorev, M. V.; Горев, Михаил Васильевич
}
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    Magnetoimpedance Effect in a SOI-Based Structure / D. A. Smolyakov [et al.] // Semiconductors. - 2019. - Vol. 53, Is. 14. - P. 98-100, DOI 10.1134/S1063782619140215. - Cited References: 10. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 “Nanostructures: physics, chemistry, biology, basics of technologies”. . - ISSN 1063-7826. - ISSN 1090-6479
   Перевод заглавия: Эффект магнитоимпеданса в структуре на основе КНИ
Рубрики:
NANOSTRUCTURE DEVICES
Кл.слова (ненормированные):
magnetoimpedance -- spintronics -- silicone on insulator -- nanosized semiconductors -- interface states
Аннотация: This paper presents the results of the study the transport properties of the SOI-based structure. Measurements were carried out on an alternating current with an external magnetic field in a wide temperature range. The influence of the magnetic field was found. We associate this effect with the influence on the surface states located at the interface, this appears as a change of the energy of their levels. This effect is enhanced by the nanoscale of the silicon channel.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036 Russia
Siberian State University of Science and Technology, Krasnoyarsk, 660014 Russia

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич
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Smolyakov, D. A.
High magnetic field magnetoimpedance effect in a mis structure / D. A. Smolyakov, A. S. Tarasov, I. A. Yakovlev // Euro-asian symposium "Trends in magnetism" (EASTMAG-2019) : Book of abstracts / чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 1. - Ст. A.P23. - P. 117. - Cited References: 1. - This study was supported by the Russian Foundation for Basic Research, project no.18-32-00035 . - ISBN 978-5-9500855-7-4

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russia
Siberian Federal University, Krasnoyarsk, Russia

Доп.точки доступа:
Ovchinnikov, S. G. \чл. конс. ком.\; Овчинников, Сергей Геннадьевич; Volkov, N. V. \чл. конс. ком.\; Волков, Никита Валентинович; Dzebisashvili, D. M. \чл. прогр. ком.\; Дзебисашвили, Дмитрий Михайлович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Смоляков, Дмитрий Александрович; Российская академия наук; Уральское отделение РАН; Институт физики металлов им. М. Н. Михеева Уральского отделения РАН; Уральский федеральный университет им. первого Президента России Б.Н. Ельцина; Российский фонд фундаментальных исследований; Euro-Asian Symposium "Trends in MAGnetism"(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(7 ; 2019 ; Sept. ; 8-13 ; Ekaterinburg)
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Advanced characterization of FeNi-based films for the development of magnetic field sensors with tailored functional parameters / S. V. Komogortsev, I. G. Vazhenina, S. A. Kleshnina [et al.] // Sensors. - 2022. - Vol. 22, Is. 9. - Ст. 3324, DOI 10.3390/s22093324. - Cited References: 35. - This research was funded by the Russian Science Foundation (RSF), project no. 22-29-00980, https://rscf.ru/en/project/22-29-00980/ (accessed on 20 March 2022) . - ISSN 1424-8220
Кл.слова (ненормированные):
magnetic field sensors -- thin films -- multilayered structures -- magnetic anisotropy -- anisotropy distribution -- ferromagnetic resonance -- magnetoimpedance -- high frequency applications
Аннотация: Magnetometry and ferromagnetic resonance are used to quantitatively study magnetic anisotropy with an easy axis both in the film plane and perpendicular to it. In the study of single-layer and multilayer permalloy films, it is demonstrated that these methods make it possible not only to investigate the average field of perpendicular and in-plane anisotropy, but also to characterize their inhomogeneity. It is shown that the quantitative data from direct integral and local measurements of magnetic anisotropy are consistent with the direct and indirect estimates based on processing of the magnetization curves. The possibility of estimating the perpendicular magnetic anisotropy constant from the width of stripe domains in a film in the transcritical state is demonstrated. The average in-plane magnetic anisotropy field of permalloy films prepared by magnetron sputtering onto a Corning glass is almost unchanged with the thickness of a single-layer film. The inhomogeneity of the perpendicular anisotropy field for a 500 nm film is greater than that for a 100 nm film, and for a multilayer film with a total permalloy thickness of 500 nm, it is greater than that for a homogeneous film of the same thickness.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Institute of Physics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Department of Magnetism of Solid State, Institute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, 620002, Russian Federation
Laboratory of Advanced Magnetic Materials, Institute of Metal Physics UD RAS, Ekaterinburg, 620108, Russian Federation

Доп.точки доступа:
Komogortsev, S. V.; Комогорцев, Сергей Викторович; Vazhenina, I. G.; Важенина, Ирина Георгиевна; Kleshnina, S. A.; Клешнина, Софья Андреевна; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Lepalovskij, V. N.; Pasynkova, A. A.; Svalov, A. V.
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Magnetic properties of FeNi/Cu-based lithographic rectangular multilayered elements for magnetoimpedance applications / G. Yu. Melnikov, I. G. Vazhenina, R. S. Iskhakov [et al.] // Sensors. - 2023. - Vol. 23, Is. 13. - Ст. 6165, DOI 10.3390/s23136165. - Cited References: 72. - This research was funded by the Russian Science Foundation (RSF), project no. 22-29-00980, https://rscf.ru/project/22-29-00980/ (accessed on 1 July 2023). - Authors acknowledge the possibility to use the Krasnoyarsk Regional Center of Research Equipment of the Federal Research Center “Krasnoyarsk Science Center SB RAS” for ferromagnetic resonance studies. We thank A.A. Yuvchenko and V.N. Lepalovskij for special support. The authors wish to thank the anonymous referees for their comments and suggestions . - ISSN 1424-8220
Кл.слова (ненормированные):
magnetic multilayers -- permalloy -- magnetic properties -- ferromagnetic resonance -- spin-wave resonance -- magnetoimpedance -- magnetic field sensors
Аннотация: The rectangular elements in magnetoimpedance (MI) configuration with a specific nanocomposite laminated structure based on FeNi and Cu layers were prepared by lift-off lithographic process. The properties of such elements are controlled by their shape, the anisotropy induced during the deposition, and by effects associated with the composite structure. The characterizations of static and dynamic properties, including MI measurements, show that these elements are promising for sensor applications. We have shown that competition between the shape anisotropy and the in-plane induced anisotropy of the element material is worth taking into account in order to understand the magnetic behavior of multilayered rectangular stripes. A possibility of the dynamic methods (ferromagnetic and spin-wave resonance) to describe laminated planar elements having a non-periodic modulation of both structure and magnetic parameters of a system is demonstrated. We show that the multilayered structure, which was originally designed to prevent the development of a “transcritical” state in magnetic layers and to reach the required thickness, also induces the effects that hinder the achievement of the goal, namely an increase in the perpendicular magnetic anisotropy energy.

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Держатели документа:
Institute of Natural Sciences and Mathematics, Ural Federal University, 620002 Ekaterinburg, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
School of Space and Information Technology, Siberian Federal University, 660041 Krasnoyarsk, Russia
Applied Physics Department, Reshetnev Siberian State University of Science and Technology, 660037 Krasnoyarsk, Russia

Доп.точки доступа:
Melnikov, Grigory Yu.; Vazhenina, I. G.; Важенина, Ирина Георгиевна; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Boev, N. M.; Боев, Никита Михайлович; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Svalov, Andrey V.; Kurlyandskaya, Galina V.
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10.

Magnetoimpedance in manganese sulfide substituted with lutetium / M. N. Sitnikov, S. S. Aplesnin, A. M. Kharkov [et al.] // Phys. Solid State. - 2023. - Vol. 65, Is. 2. - P. 211-217, DOI 10.21883/PSS.2023.02.55402.527. - Cited References: 28. - This study was supported by a grant of the President of the Russian Federation No. MK-620.2021.1.2 . - ISSN 1063-7834. - ISSN 1090-6460
Кл.слова (ненормированные):
Semiconductors -- impedance -- magnetoimpedance -- attenuation of ultrasound
Аннотация: The components of the impedance, the impedance of the LuxMn1–xS (x ˃ 0.2) solid solution in the temperature range of 80-500 K and the frequency of 100-106 Hz were studied. A change in the sign of the magnetoimpedance in concentration and temperature is found. The contribution of the reactive and active components to the magnetoimpedance is determined. The correlation of magnetoimpedance temperatures with the temperatures of the maximum attenuation of ultrasound and electrosound has been established. The frequency dependences of the reactive part of the impedance are described in the Cole-Cole model.

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Публикация на русском языке Магнитоимпеданс в сульфиде марганца, замещенного лютецием [Текст] / М. Н. Ситников, С. С. Аплеснин, А. М. Харьков [и др.] // Физ. тверд. тела. - 2023. - Т. 65 Вып. 2. - С. 219-225

Держатели документа:
Siberian State University of Science and Technology, Krasnoyarsk, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia

Доп.точки доступа:
Sitnikov, M. N.; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Kharkov, A. M.; Abdelbaki, H.; Zelenov, F. V.
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11.

    Magnetoresistance and magnetoimpedance in holmium manganese sulfides / O. B. Romanova, S. S. Aplesnin, M. N. Sitnikov [et al.] // Appl. Phys. A. - 2022. - Vol. 128, Is. 2. - Ст. 124, DOI 10.1007/s00339-021-05198-x. - Cited References: 46. - Funding was provided by Russian Foundation for Fundamental Investigations (20-42-243002) . - ISSN 0947-8396. - ISSN 1432-0630
   Перевод заглавия: Магнитосопротивление и магнитоимпеданс в гольмиевом сульфиде марганца

РУБ Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
PHASE-SEPARATION
IMPEDANCE
Кл.слова (ненормированные):
Sulfides -- I-V characteristics -- Electrical polarization -- Magnetoresistance -- Magnetoimpedance
Аннотация: The structure, transport characteristics, real and imaginary parts of the impedance components and electric polarization of the HoXMn1-XS (X = 0.1 and 0.2) system have been investigated in the temperature range of 80-500 K in magnetic fields of up to 12 kOe. The morphology of synthesized samples has been studied. The influence of the magnetic field on the transport characteristics, on both direct and alternating currents of holmium manganese sulfides, have been established. The negative effects of DC magnetoresistance in the region of the magnetic phase transition and positive AC magnetoimpedance up to 4% in the paramagnetic region have been established. The critical temperatures of the existence of the electric polarization have been determined. At a substitution concentration of X = 0.1, the activation character of the relaxation time versus temperature has been found. The diffusion contribution for the composition with X = 0.2 has been established by the impedance hodograph.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Udod, L. V.; Удод, Любовь Викторовна; Kharkov, A. M.; Russian Foundation for Fundamental InvestigationsRussian Foundation for Basic Research (RFBR) [20-42-243002]
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12.

Magnetoresistance and IR spectrum of impurity states in the Ce3Fe5O12 film / S. S. Aplesnin, A. N. Masyugin, V. V. Kretinin [et al.] // Phys. Solid State. - 2021. - Vol. 63, Is. 2. - P. 242-247, DOI 10.1134/S1063783421020025. - Cited References: 28. - This study was supported by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, project no. 18-42-240001 “Inversion of the Sign of Magnetoelectric Tensor Components with Temperature in the Neodymium-Doped Bismuth Iron Garnet Films” . - ISSN 1063-7834
Кл.слова (ненормированные):
magnetoimpedance -- IR spectroscopy -- cerium iron garnet -- thin films
Аннотация: In polycrystalline cerium iron garnet films, the gap in the electron excitation spectrum and electronic transitions between di- and tetravalent iron and cerium impurity ions have been established from the IR absorption spectra. The temperatures of delocalization of the ferrous states of iron have been found from the impedance spectroscopy, electrical resistance, and IR spectroscopy data. The difference between the ac and dc magnetoresistances has been established and explained using a model of a dielectrically inhomogeneous medium.

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Публикация на русском языке Магнетосопротивление и ИК-спектр примесных состояний в пленке Ce3Fe5O12 [Текст] / С. С. Аплеснин, А. Н. Масюгин, В. В. Кретинин [и др.] // Физ. тверд. тела. - 2021. - Т. 63 Вып. 2. - С. 218-223

Держатели документа:
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Masyugin, A. N.; Kretinin, V. V.; Konovalov, S. O.; Shestakov, N. P.; Шестаков, Николай Петрович
}
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13.

    Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device / D. Smolyakov, A. Tarasov, L. Shanidze [et al.] // Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст. 2100459, DOI 10.1002/pssa.202100459. - Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886 . - ISSN 1862-6300. - ISSN 1862-6319
   Перевод заглавия: Влияние магнитного и электрического полей на сопротивление на переменном токе транзисторного устройства на основе кремния на изоляторе

РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
NANOSTRUCTURES
Кл.слова (ненормированные):
impurities states -- magnetoimpedance -- magnetoresistance -- pseudo-MOSFET -- semiconductors -- SOI structure -- transistor
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Pr Svobodny 79, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, Lev; Шанидзе, Лев Викторович; Bondarev, I. A.; Бондарев, Илья Александрович; Baron, F. A.; Барон, Филипп Алексеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
}
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14.

Electrical properties of the polycrystalline BiFe0.95Co0.05O3 films / O. B. Romanova, V. V. Kretinin, S. S. Aplesnin [et al.] // Phys. Solid State. - 2021. - Vol. 63. Is. 6. - P. 897-903, DOI 10.1134/S1063783421060184. - Cited References: 34. - This study was supported by the Russian Foundation for Basic Research and the Belarusian Republican Foundation for Basic Research, project no. 20-52-00005 . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
BiFeO3 THIN-FILMS
   PHASE-SEPARATION
   CRYSTAL
   MODEL
Кл.слова (ненормированные):
semiconductor films -- magnetoresistance -- magnetoimpedance -- magnetization
Аннотация: Semiconductor BiFe0.95Co0.05O3 thin-film compounds have been synthesized by a burst technique. The film surface morphology and the effect of electronic doping via substitution of cobalt ions for trivalent iron on the optical, magnetic, and kinetic properties have been investigated in the temperature range of 77-600 K in magnetic fields of up to 12 kOe. Two electron relaxation channels have been found in the impedance spectrum in the frequency range of 0.1-1000 kHz. The negative magnetoresistance in the anomalous magnetization region and the maximum magnetoimpedance in the vicinity of the surface phase transition have been established. Using the Hall measurements, carrier types dominating in the magnetoresistance and magnetoimpedance effects have been determined. The magnetization anomalies have been explained in the model of superparamagnetic clusters and the magnetoresistance, by the carrier scattering by spin fluctuations.

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Публикация на русском языке Электрофизические свойства поликристаллических пленок BiFe0.95Co0.05O3 [Текст] / О. Б. Романова, В. В. Кретинин, С. С. Аплеснин [и др.] // Физ. тверд. тела. - 2021. - Т. 63 Вып. 6. - С. 721-728

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian State Univ Sci & Technol, Krasnoyarsk 660014, Russia.
Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, BELARUS.

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Kretinin, V. V.; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Udod, L. V.; Удод, Любовь Викторовна; Yanushkevich, K. I.; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarusian Republican Foundation for Basic Research [20-52-00005]
}
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15.

Magnetoresistance, magnetoimpedance, magnetothermopower, and photoconductivity in silver-doped manganese sulfides / O. B. Romanova [et al.] // J. Appl. Phys. - 2019. - Vol. 125, Is. 17. - Ст. 175706, DOI 10.1063/1.5085701. - Cited References: 29. - This study was supported by the Russian Foundation for Basic Research (Project No. 18-52-00009 Bel_a). The reported study was funded by the Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science (Project No. 18-42-240001 r_a), to the research project: "Inversion of the Sign of the Components of the Magnetoelectric Tensor on the Temperature in Films of Bismuth Garnet Ferrite Replaced by Neodymium." This study was carried out in the framework of the state task No. 3.5743.2017/6.7. . - ISSN 0021-8979. - ISSN 1089-7550

РУБ Physics, Applied
Рубрики:
MAGNETIC-PROPERTIES
RESISTIVITY
Аннотация: New multifunction materials in the AgXMn1‒XS (Х = 0.05) system have been synthesized and investigated in the temperature range of 77‒500 K in magnetic fields up to 12 kOe. Near the temperature of the magnetic transition (ТN = 176 K), the anomalous behavior of the temperature dependence of magnetization has been observed and has been attributed to the formation of ferrons. An analysis of the infrared spectroscopy data and I‒V characteristics has revealed the spin-polaron subband splitting. Several conductivity channels have been found from the impedance spectra. The temperature and magnetic field dependences of the carrier relaxation time have been obtained. The magnetoresistance (−21%), magnetoimpedance (−65%), magnetothermopower (−40%), and photoconductivity effects have been detected. The majority carrier type, density, and mobility have been determined from the Hall-effect measurement data. The observed effects have been explained using a ferron model.
Синтезированы и исследованы новые многофункциональные материалы системы AgXMn1-XS (Х=0.05) в интервале температур 77-500К в магнитных полях до 12 кЭ. В близи температуры магнитного перехода (ТN=176К) наблюдается аномальное поведение температурной зависимости намагниченности, вызванное образованием ферронов. Найдено расщепление спин-поляронной подзоны из ИК спектроскопии и вольт-амперных характеристик. Установлено несколько каналов проводимости из спектров импеданса, отличающихся частоте. Определена зависимость времени релаксации носителей заряда от температуры и магнитного поля. Обнаружено четыре эффекта: магнитосопротивление (-21%), магнитоимпеданс (-65%), магнитотермоЭДС (-40%) и фотопроводимость. Найдены: тип, концентрация и подвижность основных носителей заряда из холловских измерений. Обнаруженные эффекты объясняются в модели ферронов.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Dept Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
Siberian State Univ Sci & Technol, Dept Phys, Krasnoyarsk 660014, Russia.
Sci Pract Mat Res Ctr NAS, Minsk 220072, BELARUS.

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Udod, L. V.; Удод, Любовь Викторовна; Sitnikov, M. N.; Kretinin, V. V.; Yanushkevich, K. I.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Russian Foundation for Basic Research [18-52-00009 Bel_a]; Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science [18-42-240001 r_a]
}
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16.

Smolyakov, D. A.
Bias-controlled magnetoimpedance effect in a mis structure / D. A. Smolyakov, A. O. Gustaitsev, N. V. Volkov // Moscow Int. Symp. on Magnet. (MISM-2014) : Book of abstracts. - 2014. - Ст. 1PO-K-8. - P. 541 . - ISBN 978-5-91978-025-0

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Доп.точки доступа:
Gustaitsev, A. O.; Густайцев Артур Олегович; Volkov, N. V.; Волков, Никита Валентинович; Смоляков, Дмитрий Александрович; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
}
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17.

    The bias-controlled magnetoimpedance effect in a MIS structure / D. A. Smolyakov [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2015. - Vol. 233-234: Achievements in Magnetism. - P. 451-455, DOI 10.4028/www.scientific.net/SSP.233-234.451 . - ISSN 1662-9779. - ISSN 978-3-038
   Перевод заглавия: Контролируемый напряжением смещения эффект магнитоимпеданса в МДП структуре
Кл.слова (ненормированные):
Bias -- Magnetoimpedance -- MIS-structure -- Magnetic fields -- Schottky barrier diodes -- Temperature distribution -- Applied magnetic fields -- Bias -- Giant magneto impedance effect -- Lower temperatures -- Magneto-impedance -- Magneto-impedance effects -- MIS structure -- Temperature dependence -- Magnetism
Аннотация: We report the giant magnetoimpedance effect in a ferromagnetic metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/n-Si structure. It was established that the applied magnetic field strongly influences the impedance of the structure in the temperature range 10—30 K. In this range, there is the pronounced peak in the temperature dependence of the real part of the impedance at frequencies from 10 Hz to 1 MHz. The effect of the magnetic field manifests itself as a shift of the peak of the real part of the impedance. Under the action of a bias voltage of 5 V, the peak of the real part of the impedance similarly shifts toward lower temperatures with and without applied magnetic field. © (2015) Trans Tech Publications, Switzerland.

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Доп.точки доступа:
Perov, N. \ed.\; Semisalova, A. \ed.\; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Gustaitsev, A. O.; Volkov, N. V.; Волков, Никита Валентинович; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
}
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18.

Anisotropy of the magnetoimpedance in hybrid hetero structure FeNi/SiO2/p-Si / A. V. Lukyanenko [et al.] // Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P. 111. - This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043

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Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Gustaitsev, A. O.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Volkov, N. V.; Волков, Никита Валентинович; "Spin physics, spin chemistry, and spin technology", Internnational conference(2015 ; Jun. ; 1-5 ; Saint Peterburg); Физико-технический институт им. А.Ф. Иоффе РАН; Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН; "Инно-мир", центр межрегионального инновационного развития
}
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19.

    Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures / N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2015. - Vol. 383. - P. 69-72, DOI 10.1016/j.jmmm.2014.11.014. - Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043. . - ISSN 0304-8853
   Перевод заглавия: Контролируемые напряжением смещения магнитотранспортные явления, наблюдаемые на постоянном и переменном токе в гибридных структурах

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SILICON
SPINTRONICS
FIELD
Кл.слова (ненормированные):
Spintronics -- Hybrid structures -- Magnetoresistance -- Magnetoimpedance -- Photoinduced magnetoresistance
Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Ministry of Education and Science of the Russian Federation [02.G25.31.0043]; Moscow International Symposium on Magnetism(6 ; 2014 ; June-July ; Moscow)
}
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20.

The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier / N. V. Volkov [et al.] // Appl. Phys. Lett. - 2014. - Vol. 104, Is. 22. - Ст. 222406, DOI 10.1063/1.4881715. - Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043. . - ISSN 0003-6951. - ISSN 1077-3118

РУБ Physics, Applied
Рубрики:
MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
Russian Acad Sci, Inst Automat & Control Proc, Far East Branch, Vladivostok 690041, Russia
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Gustaitsev, A. O.; Balashov, V. V.; Korobtsov, V .V.; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
}
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