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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Вальков, Валерий Владимирович, Федосеев, Александр Дмитриевич
Заглавие : Теплоемкость и магнитосопротивление слаболегированного двумерного антиферромагнетика в неколлинеарной фазе
Место публикации : Изв. РАН. Сер. физич. - 2013. - Т. 77, № 3. - С. 387-389. - DOI 10.7868/S0367676513030381
Аннотация: Исследован энергетический спектр подвижных носителей заряда в двумерном антиферромагнетике, помещенном во внешнее магнитное поле. Показано, что учет скоса магнитных подрешеток модифицирует эффективную массу подвижных носителей заряда слаболегированного антиферромагнетика. Этот факт существенным образом сказывается на транспортных и термодинамических свойствах системы. Обнаружено явление перехода в полуметаллическую фазу под воздействием внешнего магнитного поля.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Никитин, Станислав Евгеньевич, Попков, Сергей Иванович, Петров, Михаил Иванович, Терентьев, Константин Юрьевич, Семенов, Сергей Васильевич, Шайхутдинов, Кирилл Александрович
Заглавие : Особенности магнетосопротивления двухслойного монокристаллического манганита La1,4Sr1,6Mn2O7
Коллективы : Сибирский молодежный семинар по высокотемпературной сверхпроводимости и физике наноструктур – ОКНО 2014 (X; 13 - 14 ноября 2014 г.; Новосибирск)
Место публикации : Вестник НГУ. Физика: Новосибирский государственный университет, 2015. - Т. 10, Вып. 1. - С. 63-66. - ISSN 1818-7994
Примечания : Библиогр.: 8
Ключевые слова (''Своб.индексиров.''): манганиты лантана--положительное магнетосопротивление--manganite--positive magnetoresistance
Аннотация: Представлены результаты исследования магнетосопротивления на двухслойном монокристаллическом манганите лантана La1,4Sr1,6Mn2O7 при пропускании транспортного тока вдоль оси с ( j ‖ c ) и приложении внешнего магнитного поля H ‖ j и H ⊥ j. В монокристалле La1,4Sr1,6Mn2O7 в случае, когда H ⊥ j, помимо присущего всем замещенным манганитам лантана отрицательного магнетосопротивления в температурном диапазоне T 60 K, обнаружен эффект положительного магнетосопротивления. Механизм возникновения данного эффекта принципиально отличается от эффекта колоссального магнетосопротивления, присущего всем манганитам лантана. Мы считаем, что появление положительного магнетосопротивления вызвано спин-зависимым туннелированием носителей между марганец-кислородными бислоями, при данной конфигурации «магнитное поле - ток», и может быть объяснено особенностями магнитной структуры данных составов.We investigate magnetoresistance of single-crystal bilayer lanthanum manganite La1.4Sr1.6Mn2O7 at a transport current flowing along the crystal c axis and in external magnetic fields applied parallel to the crystal c axis or ab plane. It is demonstrated that the La1.4Sr1.6Mn2O7 manganite exhibits the positive magnetoresistance effect in the magnetic field applied in the ab plane of the sample at the temperatures T 60 K. The mechanism of this effect is shown to be fundamentally different from the colossal magnetoresistance effect typical of lanthanum manganites. The positive magnetoresistance originates from spin-dependent tunneling of carriers between the manganese-oxygen bilayers and can be explained by features of the magnetic structure of the investigated compounds.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Tarasov A. S., Volochaev M. N., Rautskii M. V., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Tambasova E. V.
Заглавие : Weak localization and size effects in thin In2O3 films prepared by autowave oxidation
Коллективы : Russian Foundation for Basic Research [16-32-00302 MOJI_a, 15-02-00948-A, 16-03-00069-A]; Council for Grants of the President of the Russian Federation [SP-317.2015.1]; Program of Foundation for Promotion of Small Enterprises in Science and Technology ("UMNIK" Program) [6662GammaY2015, 9607GammaY/2015]
Место публикации : Physica E: Elsevier Science, 2016. - Vol. 84. - P.162-167. - ISSN 1386-9477, DOI 10.1016/j.physe.2016.06.005. - ISSN 1873-1759(eISSN)
Примечания : Cited References:70. - This study was supported by the Russian Foundation for Basic Research (Grants # 16-32-00302 MOJI_a, # 15-02-00948-A, # 16-03-00069-A), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the Program of Foundation for Promotion of Small Enterprises in Science and Technology (No. 6662 Gamma Y2015, 9607 Gamma Y/2015) ("UMNIK" Program). Electron microscopic studies were performed on the equipment of CCU KSC SB RAS.
Предметные рубрики: SOLID-STATE SYNTHESIS
INDIUM TIN OXIDE
DOPED ZNO FILMS
OPTICAL-PROPERTIES
MAGNETIC-FIELD
NEGATIVE MAGNETORESISTANCE
CARBON NANOTUBES
TEMPERATURE
SEMICONDUCTOR
TRANSPORT
Ключевые слова (''Своб.индексиров.''): thin indium oxide films--weak localization--electron-electron--interaction--disordered semiconductors--nanostructured films--phase-coherent length
Аннотация: The negative magnetoresistance of thin In2O3 films, obtained by an autowave oxidation reaction, was detected within a temperature range of 4.2-80 K. The magnetoresistance was -1.35% at a temperature of 4.2 K and an external magnetic field of 1 T. A weak localization theory was used to explain the negative magnetoresistance and to determine the phase-coherence length in a temperature range of 4.2-80 K. The phase-coherence length was found to oscillate as the temperatures increased to around 30 K. From the maximum and minimum values of the oscillation of the phase-coherence length, it was suggested that the In2O3 film has two structure characteristic parameters. Transmission electron microscopy showed the structure of the thin In2O3 film to have structural features of a crystal phase- amorphous phase. It was found that the crystalline phase characteristic size was consistent with the maximum phase-coherence length and the amorphous phase characteristic size was consistent with the minimum phase-coherence length. It has been suggested that the temperature measurements of the magnetoresistance and the theory of weak localization can be used to evaluate the structural features of nanocomposite or nanostructured thin films. (C) 2016 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Semenov S. V., Balaev D. A., Petrov M. I.
Заглавие : Universal behavior and temperature evolution of the magnetoresistance hysteresis in granular high-temperature superconductors Y-Ba-Cu-O
Место публикации : Phys. Solid State. - 2021. - Vol. 63, Is. 7. - P.1069-1080. - ISSN 1063-7834, DOI 10.1134/S1063783421070192. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 80. - The authors are grateful to D.M. Gokhfeld for discussion of the results. The measurements of the transport properties were performed in part on a PPMS-6000 system of the Center for Collective Use, Krasnoyarsk Scientific Center, Siberian Branch of the Russian Academy of Sciences
Предметные рубрики: CRITICAL-CURRENT-DENSITY
CURRENT-VOLTAGE CHARACTERISTICS
MAGNETIC-FLUX COMPRESSION
Аннотация: Regularities in the behavior of the magnetoresistance hysteresis R(H) in the granular yttrium high-temperature superconductors (HTSs) have been established. For this purpose, a comparative analysis of the magnetotransport properties has been carried out on the granular HTS samples, which exhibit (i) approximately the same magnetic properties and temperatures of the onset of the superconducting transition (90.5–93.5 K, which is characteristic of HTS grains) and (ii) different critical transport currents JC (which is characteristic of grain boundaries). Despite a significant (by more than an order of magnitude) spread of the JC values for the three samples, a universal behavior of the magnetoresistance hysteresis has been found, which is apparently inherent in all the granular Y–Ba–Cu–O compounds. The R(H) hysteresis is extremely broad and, in a fairly wide external field range, the dependence of the magnetoresistance hysteresis width ΔН on the field Hdec (the external field for the decreasing hysteresis branch is Н = Hdec) is almost linear: ΔH ≈ Hdec. This behavior is observed over the entire temperature range of implementation of the superconducting state (the investigations have been carried out at temperatures of 77–88 and 4.2 K). The result obtained has been explained by considering the effective field in grain boundaries, which is a superposition of the external field and the field induced by the magnetic moments of grains. The field induced by grains, in turn, significantly increases in the region of grain boundaries due to the magnetic flux compression (the grain boundary length is shorter than the HTS grain size by several orders of magnitude). The aforesaid has been confirmed by the analysis of the R(H) hysteresis for the Y–Ba–Cu–O- and CuO-based HTS composite, in which the grain boundary length is purposefully increased; as a result, the flux compression is less pronounced and the R(H) hysteresis narrows.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Petrakovskii G. A., Vasil'ev V. N., Sablina K. A.
Заглавие : Two-phase paramagnetic-ferromagnetic state of La0.7Pb0.3MnO3 single-crystal lanthanum manganite
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2002. - Vol. 44, Is. 7. - P1350-1354. - ISSN 1063-7834, DOI 10.1134/1.1494635
Примечания : Cited References: 17
Предметные рубрики: COLOSSAL MAGNETORESISTANCE
MAGNETIC-RESONANCE
DOPED MANGANITES
LA1-XCAXMNO3
SEPARATION
TRANSITION
RELAXATION
EPR
Аннотация: Two phases, paramagnetic and ferromagnetic, were shown by the magnetic resonance method to coexist below the temperature T-C in La0.7Pb0.3MnO3 single crystals exhibiting colossal magnetoresistance. The magnetic resonance spectra were studied in the frequency range 10-78 GHz. The specific features in the behavior of the spectral parameters were observed to be the strongest at the temperatures corresponding to the maximum magnetoresistance in the crystals. The concentration ratios of the paramagnetic and ferromagnetic phases in the samples were found to be sensitive to variations in temperature and external magnetic field. This behavior suggests realization of the electronic phase separation mechanism in the system under study. (C) 2002 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Patrin G. S., Petrakovskii G. A., Sablina K. A., Ovchinnikov S. G., Varnakov S. N.
Заглавие : Tunneling magnetoresistance in a Eu0.7Pb0.3MnO3 (single crystal)-Fe (film) structure
Место публикации : Tech. Phys. Lett.: AMER INST PHYSICS, 2003. - Vol. 29, Is. 3. - P200-202. - ISSN 1063-7850, DOI 10.1134/1.1565633
Примечания : Cited References: 7
Аннотация: We have studied the magnetoresistive properties of a structure comprising single crystal manganite Eu0.7Pb0.3MnO3 covered with an epitaxial iron film. At temperatures below T-C of the manganite crystal, the structure exhibits positive magnetoresistance. The behavior of the resistance as a function of the magnetic field is characteristic of a tunneling junction with ferromagnetic electrodes separated by a thin insulating film. The observed effect is related to the formation of a transition layer at the manganite-Fe interface, which is depleted of oxygen and possesses dielectric properties. The sensitivity of the resistance with respect to the magnetic field is determined both by the negative magnetoresistance of the manganite crystal and by the tunneling contribution to the conductivity, whereby the tunneling current depends on the mutual orientation of magnetic moments of the electrodes (Eu0.7Pb0.3MnO3 crystal and Fe film). (C) 2003 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Balaev A. D.
Заглавие : Tunnel Conductivity and Tunnel Magnetoresistance of the Fe-SiO Films: Interplay of the Magnetotransport and Magnetic Properties
Место публикации : Phys. Solid State. - 2019. - Vol. 61, Is. 7. - P.1203-1210. - ISSN 1063-7834, DOI 10.1134/S1063783419070047. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 48
Предметные рубрики: GIANT MAGNETORESISTANCE
GRANULAR FILMS
TEMPERATURE
TRANSPORT
Аннотация: The electrical properties of a system of nanogranular amorphous Fe–SiO films with a SiO concentration between 0 and 92 vol % have been investigated. The samples with a low SiO content are characterized by the metal-type conductivity. With an increase in the dielectric content x in the films, the concentration transition from the metal to tunneling conductivity occurs at x ≈ 0.6. At the same concentration, the ferromagnet–superparamagnet transition is observed, which was previously investigated by the magnetic method. The temperature dependences of the electrical resistivity ρ(T) for the compositions corresponding to the dielectric region obey the law ρ(T) ~ exp(2(C/kT)1/2), which is typical of the tunneling conductivity. The estimation of the metal grain sizes from the tunneling activation energy C has shown good agreement with the sizes obtained previously by analyzing the magnetic properties. In the dielectric region of the compositions, the giant magnetoresistive effect attaining 25% at low temperatures has been obtained.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kiselev N. I., Mankov Yu. I., Pynko V. G.
Заглавие : Transverse magnetoresistance of single-crystal Ni films
Место публикации : Fiz. Tverd. Tela. - 1989. - Vol. 31, Is. 4. - P.243-246. - ISSN 0367-3294
Примечания : Cited References: 7
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Yurkin G. Yu., Patrin G. S., Velikanov D. A., Beletsky V. V.
Заглавие : Transport properties of FeSi with cobalt impurities
Место публикации : TRENDS IN MAGNETISM. - 2011. - Vol. 168-169. - С. 493-496. - ISSN 10120394 (ISSN); 9783037850213 (ISBN), DOI 10.4028/www.scientific.net/SSP.168-169.493
Ключевые слова (''Своб.индексиров.''): iron monosilicide--kondo effect--magnetization--resistivity--spindependent scattering--superparamagnetic cluster--cobalt--crystals--electric resistance--electron energy loss spectroscopy--kondo effect--magnetic field effects--magnetic properties--magnetization--magnetoresistance--scattering--superparamagnetism--transport properties--cobalt--electric conductivity--electron scattering--impurities--kondo effect--magnetism--magnetization--experimental investigations--kondo models--magnetoresistance properties--resistivity--si crystals--spin dependent scattering--superparamagnetic clusters--crystal impurities--crystal impurities
Аннотация: The results of experimental investigations of Fe1-xCo xSi crystals in the impurity limit are presented in this article. We made an attempt to study changes of magnetic properties and conductivity in mixed Fe1-xCoxSi crystals in the impurity limit. Magnetoresistance properties are well described in the framework of Kondo model. The presence of Co-subsystem leads to the occurrence of spin-dependent channel in electron scattering conduction.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Velikanov D. A., Balaev A. D., Balaev D. A., Yanushkevich K. I., Galyas A. I., Demidenko O. F., Bandurina O. N.
Заглавие : Transport properties and ferromagnetism of Co(x)Mn(1-x)Ssulfides
Разночтения заглавия :авие SCOPUS: Transport properties and ferromagnetism of Co x Mn 1 - X S sulfides
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 106, Is. 4. - P765-772. - ISSN 1063-7761, DOI 10.1134/S1063776108040158
Примечания : Cited References: 39
Предметные рубрики: GIANT VOLUME MAGNETOSTRICTION
COLOSSAL MAGNETORESISTANCE
MAGNETIC SEMICONDUCTORS
ELECTRICAL-PROPERTIES
ROOM-TEMPERATURE
ALPHA-MNS
SPINTRONICS
TRANSITION
FEXMN1-XS
FIELDS
Ключевые слова (''Своб.индексиров.''): coulomb interactions--current voltage characteristics--electromotive force--ferromagnetism--magnetic susceptibility--magnetization--thermoelectricity--transport properties--charge susceptibility--external magnetic fields--temperature intervals--thermoelectromotive force--cobalt compounds
Аннотация: We have studied the resistivity and thermoelectromotive force (thermo emf) in a temperature range of T = 80-1000 K, the magnetic susceptibility and magnetization in a temperature range of T= 4.2-300 K at an external magnetic field of up to 70 kOe, and the structural characteristics of CoxMn1 - S-x sulfides (0
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volochaev M. N., Granovsky A. B., Zhilova O. V., Kalinin Y. E., Ryl'kov V. V., Sumets M. P., Makagonov V. A., Pankov S. Y., Sitnikov A. V., Fadeev E., Lahderanta E., Foshin V.
Заглавие : Transport and magnetic phenomena in ZnO-С thin-film heterostructures
Место публикации : Superlattices Microstruct. - 2020. - Vol. 140. - Ст.106449. - ISSN 07496036 (ISSN), DOI 10.1016/j.spmi.2020.106449
Примечания : Cited References: 36. - The work was supported by the Ministry of Education and Science of Russia (project No. 3.1867.2017/4.6 ) and the RFBR (project No. 19-07-00471). The work was partially funded by the Academy of Finland
Аннотация: ZnO- and C-based heterostructures were fabricated by the layer-by-layer deposition technique using the ion-beam sputtering process. Structure, electrical and magnetic properties of fabricated heterostructures are discussed. The two-phase (ZnO and C) films are evolved into a multilayer structure, consisting of amorphous carbon and crystalline ZnO layers when the bilayer thickness increases. When carbon is added to ZnO, its electrical resistivity reduces. The conduction mechanism changes from the variable-range hopping in a narrow energy band to the nearest neighbors hopping in ZnO–C films with a thickness of h ˂ 150 nm. The temperature dependence of conductivity changes from the Arrhenius-like to logarithmic law, indicating that the strong charge localization turns into a weak one when the film thickness is about 150 nm. The negative magnetoresistance of up to 1% was detected at 77 K. The film ferromagnetism at the temperature of 10 K was not found.
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12.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Badía-Romano L., Rubín J., Magén C., Bartolomé F., Sesé J., Ibarra M.R., Bartolomé J., Hierro-Rodriguez A., Martín J.I., Alameda J.M., Bürgler D.E., Varnakov S. N., Komogortsev S. V., Ovchinnikov S. G.
Заглавие : Thermomagnetic behaviour and compositional irreversibility on (Fe/Si)3 multilayer films
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2014. - Vol. 364. - P.24-33. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.04.029. - ISSN 1873-4766
Примечания : Cited References: 52. - The financial support of the Spanish MINECOMAT2011-23791, FIS2008-06249, the President of Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, 14-0290404, Aragonese DGA-IMANA E34 (cofunded by Fondo Social Europeo) and that received from the European Union FEDER funds is acknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. Authors would like to acknowledge the use of Servicio General de Apoyo a la Investigación-SAI, Universidad de Zaragoza.
Предметные рубрики: SPUTTERED FE/SI SUPERLATTICES
INTERLAYER EXCHANGE
GIANT MAGNETORESISTANCE
MAGNETIC-PROPERTIES
SILICIDE FORMATION
EPITAXIAL-GROWTH
ROOM-TEMPERATURE
IRON DISILICIDE
TRILAYER FILMS
THIN-FILMS
Ключевые слова (''Своб.индексиров.''): fe-si multilayer--chemical transformation--fe silicide--interlayer exchange coupling--magnetic domain--in situ annealing
Аннотация: This work presents the correlation between the morphology and magnetic properties of (Fe/Si)3 multilayers with different Fe layer thicknesses and fixed Si spacer thickness in a broad temperature range (View the MathML source5T800K). Films were prepared by thermal evaporation under ultrahigh vacuum onto a buffer layer of Fe/Ag deposited on a GaAs(001) substrate. Transmission electron microscopy reveals good epitaxial growth and phase transformations in the c-FeSi phase formed during deposition as well as upon subsequent annealing of the sample up to 800 K. Remanence to saturation magnetization MR/MS ratios and saturation fields are related to several types of interlayer exchange coupling. 90°-coupling and a superposition of 90° and antiferromagnetic interlayer exchange coupling are found depending on the Fe layer thickness. Magnetization curves were investigated as a function of temperature by in situ annealing. They show an irreversible thermal process as temperature increases from 300 to 450 K that is correlated to the formation of a ferromagnetic silicide phase. At higher temperature this phase transforms into a paramagnetic Fe–Si phase.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Holmstrom E., Eriksson O., Sandalov I.
Заглавие : Theory of spin filtering through quantum dots
Место публикации : Phys. Rev. B: AMER PHYSICAL SOC, 2003. - Vol. 67, Is. 20. - Ст.205310. - ISSN 1098-0121, DOI 10.1103/PhysRevB.67.205310
Примечания : Cited References: 28
Предметные рубрики: DEPENDENT TUNNELING JUNCTIONS
NARROW ENERGY BANDS
ELECTRON CORRELATIONS
MAGNETORESISTANCE
BARRIER
POLARIZATION
Аннотация: Using a nonequilibrium diagram technique for Hubbard operator Green functions combined with a generalization of the transfer Hamiltonian formalism, we calculate the transport through a magnetic quantum dot system with spin-dependent couplings to the contacts. In specific regimes of the parameter space the spin-dependent tunnel current becomes more than 99.95% spin polarized, suggesting that a device thus constructed can be used in spin-filter applications. First-principles electronic structure calculations show the existence of nanostructured systems, such as, e.g., MgO/Fe/Pd(5)/Fe/MgO (001), with the desired properties in the direction of the current.
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14.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Kuzubov A. A., Kuklin A. V., Lee H., Kovaleva E. A., Sakai S., Entani S., Naramoto H., Sorokin P. B.
Заглавие : Theoretical investigation of the interfaces and mechanisms of induced spin polarization of 1D narrow zigzag graphene- and h-BN nanoribbons on a SrO-terminated LSMO(001) surface
Коллективы : Ministry of Education and Science of the Russian Federation [K2-2015-033]; Russian Science Foundation [14-13-00139]; Japanese Science Foundation (JSPS KAKENHI) [16H3875]
Место публикации : J. Phys. Chem. A: American Chemical Society, 2017. - Vol. 121, Is. 3. - P.680-689. - ISSN 1089-5639, DOI 10.1021/acs.jpca.6b09696
Примечания : Cited References:74. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow; and the ICC of Novosibirsk State University for providing the computing resources. P.B.S. acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2015-033). The Russian Science Foundation (Grant No 14-13-00139) supported the work of the Russian team. The Japanese Science Foundation (JSPS KAKENHI, Grant No 16H3875) supported the work of the Japanese team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
AUGMENTED-WAVE METHOD
GIANT MAGNETORESISTANCE
Аннотация: The structure of the interfaces and the mechanisms of induced spin polarization of 1D infinite and finite narrow graphene- and h-BN zigzag nanoribbons placed on a SrO-terminated La1-xSrxMnO3 (LSMO) (001) surface were studied using density functional theory (DFT) electronic structure calculations. It was found that the pi-conjugated nanofragments are bonded to the LSMO(001) surface by weak disperse interactions. The types of coordination of the fragments, the strength of bonding, and the rate of spin polarization depend upon the nature of the fragments. Infinite and finite graphene narrow zigzag nanoribbons are characterized by the lift of the spin degeneracy and strong spin polarization caused by interface-induced structural asymmetry and oxygen-mediated indirect exchange interactions with Mn ions of LSMO support. Spin polarization changes the semiconducting nature of infinite graphene nanoribbons to half-metallic state with visible spin-up density of states at the Fermi level. The h-BN nanoribbon binding energy is weaker than graphene nanoribbon ones with noticeably shorter interlayer distance. The asymmetry effect and indirect exchange interactions cause spin polarization of h-BN nanoribbon as well with formation of embedded states inside the band gap. The results show a possibility to use one-atom thick nanofragments to design LSMO-based heterostructures for spintronic nanodevices with h-BN as an inert spacer to develop different potential barriers.
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15.

Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Volochaev M. N., Zhilova O. V., Pankov S. Yu., Sitnikov A. V., Makagonov V. A., Babkina I. V.
Заглавие : The structure, electrical and magnetoresistance properties of heterogeneous films [In2O3/(Co40Fe40B20)34(SiO2)66]92
Коллективы : International Young Researchers' Conference on Physics, Technologies and Innovation
Место публикации : AIP Conf. Proc. - 2019. - Vol. 2174: 6th International Young Researchers' Conference on Physics, Technologies and Innovation, PTI 2019 (20-23 May 2019) Conference code: 155607. - Ст.020274. - , DOI 10.1063/1.5134425
Примечания : Cited References: 11. - This work was supported by the Ministry of Education and Science of the Russian Federation as the project part of the state task (No 3.1867.2017/4.6)
Аннотация: The [In2O3/(Co40Fe40B20)34(SiO2)66]92 thin films were obtained by ion beam sputtering. X-ray and TEM studies of the structure and phase composition showed that the [In2O3/(Co40Fe40B20)34(SiO2)66]92 films characterized by multilayer structure, where (Co40Fe40B20)34(SiO2)66 nanocomposite layers and In2O3 spacers are amourphous. It is shown that the introduction of In2O3 spacers in (Co40Fe40B20)34(SiO2)66 nanocomposite leads to decreasing in specific resistance due to creation continues conductivity layers of low-resistance In2O3. All investigated samples characterized by the presence of magnetoresistance both at 77 K and at room temperature, which is characteristic of ferromagnetic metal-dielectric nanocomposites.
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16.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Rautskii M. V., Lukyanenko A. V., Baron F. A., Bondarev I. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : The optically induced and bias-voltage-driven magnetoresistive effect in a silicon-based device
Место публикации : J. Surf. Invest.: MAIK Nauka-Interperiodica / Springer, 2015. - Vol. 9, Is. 5. - P.984-994. - ISSN 1027-4510, DOI 10.1134/S1027451015050432
Примечания : Cited References: 32. - This work was supported by the Russian Foundation for Basic Research, project nos. 14-02-00234-a and 14-02-31156; the Russian Ministry of Education and Science, state task no. 16.663.2014K; and the Russian Ministry of Education and Science, project no. 02.G25.31.0043.
Ключевые слова (''Своб.индексиров.''): magnetoresistance--magnetotransport properties--photoconductivity--bias voltage
Аннотация: The giant change in photoconductivity of a device based on the Fe/SiO2/p-Si structure in magnetic field is reported. As the magnetic field increases to 1 T, the conductivity changes by a factor of more than 25. The optically induced magnetoresistance effect is strongly dependent of the applied magnetic field polarity, as well as of sign and value of a bias voltage across the device. The main mechanism of the magnetic field effect is related to the Lorentz force, which deflects the trajectories of photogenerated carriers, thereby changing their recombination rate. The structural asymmetry of the device leads to the asymmetry of the dependence of recombination on the magnetic field polarity: recombination of carriers deflected in the bulk of semiconductor is relatively slow, while recombination of carriers at the SiO2/p-Si interface is faster. In the latter case, the interface states serve as effective recombination centers. The bias voltage sign specifies the type of carriers, whose trajectories pass near the interface, providing the main contribution to the magnetoresistance effect. The bias voltage controls the electric field accelerating carriers and, thus, affects the hole and electron trajectories. Moreover, when the bias voltage exceeds a certain threshold value, the electron impact ionization regime is implemented. The magnetic field suppresses impact ionization by enhancing recombination, which makes the largest contribution to the magnetoresistance of the device. The investigated device can be used as a prototype of silicon chips controlled simultaneously by optical radiation, magnetic field, and bias voltage. © 2015, Pleiades Publishing, Ltd.
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aplesnin S. S., Ryabinkina L. I., Romanova O. B., Har'kov A. M., Gorev M. V., Balaev A. D., Eremin E. V., Bovina A. F.
Заглавие : The magnetoelastic effect in CoxMn1-xS solid solutions
Коллективы :
Разночтения заглавия :авие SCOPUS: The magnetoelastic effect in Cox Mn1 - x S solid solutions
Место публикации : Solid State Commun.: PERGAMON-ELSEVIER SCIENCE LTD, 2010. - Vol. 150, Is. 13-14. - P564-567. - ISSN 0038-1098, DOI 10.1016/j.ssc.2010.01.009
Примечания : Cited References: 13. - This work was supported by the Russian Foundation for Basic Research projects no. 08-02-00364-a, no. 08-02-90031, no. F08037, F08-229, and no. 09-02-00554-a.
Предметные рубрики: YVO3 SINGLE-CRYSTAL
SPIN-STATE
TRANSITION
TRANSPORT
PHYSICS
LACOO3
Ключевые слова (''Своб.индексиров.''): semiconductors--x-ray scattering--galvanomagnetic effects--thermal expansion--semiconductors--x-ray scattering--galvanomagnetic effects--thermal expansion--semiconductors--x-ray scattering--coefficient of thermal expansion--magnetoelastic effects--orbital ordering--temperature hysteresis--temperature range--zero magnetic fields--crystallization--electric resistance--magnetic field effects--magnetoresistance--manganese--manganese compounds--neon--organic polymers--scattering--semiconductor quantum dots--solid solutions--solidification--thermal stress--x ray scattering--thermal expansion
Аннотация: The magnetization of cation-substituted CoxMn(1-x)S sulfides upon cooling in zero magnetic field and in a field in the temperature range 4-300 K has been measured and the resistance versus magnetic field (up to 10 kOe) dependences have been obtained. Magnetoresistance and temperature hysteresis of magnetization versus prehistory are found at the magnetic field H 0.1 T and at T 240 K. The interrelation between the magnetic and elastic subsystems of the CoxMn1-xS solid solutions has been established. A jump in the coefficient of thermal expansion is observed at the Neel temperature. The features of the physical properties are explained by orbital ordering. (C) 2010 Elsevier Ltd. All rights reserved.
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18.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Shaykhutdinov K. A., Tsikalov V. S., Petrov M. I., Balaev D. A., Semenov S. V.
Заглавие : The magnetic-field-driven effect of microwave detection in a manganite granular system
Место публикации : J. Phys. D. - 2008. - Vol. 41, Is. 1. - Ст.15004. - ISSN 0022-3727, DOI 10.1088/0022-3727/41/1/015004
Примечания : Cited References: 24
Предметные рубрики: IDENTICAL METALS
TUNNEL-JUNCTIONS
MAGNETORESISTANCE
RECTIFICATION
SPINTRONICS
TEMPERATURE
PEROVSKITES
Ключевые слова (''Своб.индексиров.''): bias currents--curie temperature--electric power generation--granular materials--magnetic field effects--microwave irradiation--voltage measurement--direct current voltage--magnetic tunnel junctions--metal insulator metal junctions--nonmagnetic metals--manganites
Аннотация: We demonstrate the microwave detection effect in a granular La0.7Ca0.3MnO3 sample. Dc voltage generated by the sample in response to microwave irradiation below the Curie temperature is found to be dependent on the applied magnetic field. The magnetic field dependence of the dc voltage has a broad peak resembling an absorption line. The detection effect depends substantially on the magnetic history of the sample; however, identical measurement conditions provide reproducibility of the experimental results. The detected dc voltage increases linearly with microwave power and strongly depends on a bias current through the sample. According to the results of systematic measurements, there exist two contributions to a value of the detected output signal. The first is magneto-independent; it can be explained in the framework of a mechanism used traditionally for description of the rectification effect in metal-insulator-metal junctions with nonmagnetic metals. The other is magneto-dependent; it originates from the interplay between the spin-dependent current through magnetic tunnel junctions and spin dynamics of the grains, which form these junctions in the sample.
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19.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Romanova O. B., Aplesnin S. S., Korolev V. V., Kretinin, V. V., Yanushkevich K. I.
Заглавие : The influence of magnetic field on the frequency dependence of the impedance in the anion–substituted manganese chalcogenides
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН
Место публикации : VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016): abstracts/ ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk: KIP RAS SB, 2016. - Ст.P4.4. - P.232. - ISBN 978-5-904603-06-9 (Шифр -478014040)
Примечания : This work was financially supported by RFFI №15–42–04099 and assignment №114090470016.
Ключевые слова (''Своб.индексиров.''): chalcogenides--impedance--relaxation--magnetoresistance
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuklin A. V., Kuzubov A. A., Kovaleva E. A., Lee, Hyosun, Sorokin, Pavel B., Sakai, Seiji, Entani, Shiro, Naramoto, Hiroshi, Avramov P. V.
Заглавие : The direct exchange mechanism of induced spin polarization of low-dimensional π-conjugated carbon- and h-BN fragments at LSMO(001) MnO-terminated interfaces
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [14-13-00139]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.23-29. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.096. - ISSN 1873-4766(eISSN)
Примечания : Cited References:70. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow and the ICC of Novosibirsk State University for providing the computing resources. Russian Science Foundation (Grant No 14-13-00139) supported the work of Russian team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
THIN-FILMS
GIANT MAGNETORESISTANCE
METALLIC
Ключевые слова (''Своб.индексиров.''): graphene nanoribbons--dft--lsmo thin films--induced spin polarization--h-bn nanoribbons--half-metal
Аннотация: Induced spin polarization of π-conjugated carbon and h-BN low dimensional fragments at the interfaces formed by deposition of pentacene molecule and narrow zigzag graphene and h-BN nanoribbons on MnO2-terminated LSMO(001) thin film was studied using GGA PBE+U PAW D3-corrected approach. Induced spin polarization of π-conjugated low-dimensional fragments is caused by direct exchange with Mn ions of LSMO(001) MnO-derived surface. Due to direct exchange, the pentacene molecule changes its diamagnetic narrow-band gap semiconducting nature to the ferromagnetic semiconducting state with 0.15 eV energy shift between spin-up and spin-down valence bands and total magnetic moment of 0.11 μB. Direct exchange converts graphene nanoribbon to 100% spin-polarized half-metal with large amplitude of spin-up electronic density at the Fermi level. The direct exchange narrows the h-BN nanoribbon band gap from 4.04 to 1.72 eV in spin-up channel and converts the h-BN ribbon semiconducting diamagnetic nature to a semiconducting magnetic one. The electronic structure calculations demonstrate a possibility to control the spin properties of low-dimensional π-conjugated carbon and h-BN fragments by direct exchange with MnO-derived LSMO(001) surface for spin-related applications.
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