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    Усиление эффекта нелинейной дифракции Рамана-Ната в двумерных нелинейных структурах / А. М. Вьюнышев [и др.] // Ученые зап. физ. фак-та МГУ. - 2015. - № 4. - Ст. 154302. - Библиогр.: 5. - Работа выполнена при финансовой поддержке гранта Президента РФ МК-2908.2015.2, а также гранта РФФИ № 15-02-03838. . - ISSN 2307-9665
   Перевод заглавия: Enhancement of Raman–Nath nonlinear diffraction effect in two-dimensional nonlinear structure
Кл.слова (ненормированные):
генерация второй гармоники -- квазисинхронизм -- нелинейная дифракция -- second harmonic generation -- quasi-phase-matching -- nonlinear diffraction
Аннотация: Рассмотрена нелинейная дифракция Раман-Ната в процессе генерации второй гармоники в двумерных нелинейных фотонно-кристаллических структурах. Получено аналитическое выражение для расчета спектрально-угловых характеристик генерируемого излучения. Нелинейная структура оптимизирована методом суперпозиции модуляции нелинейности для достижения эффективной множественной генерации второй гармоники.
Raman–Nath nonlinear diffraction in the process of second harmonic generation in two-dimensional nonlinear photonic structures is considered. An analytical expression for the calculation of spectral-angular characteristics of radiation is obtained. Nonlinear structure is optimized by the method of superposition of nonlinear susceptibility modulation to obtain efficient multiple second harmonic generation.

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Вьюнышев, Андрей Михайлович; Vyunishev, A. M.; Тимофеев, Иван Владимирович; Timofeev, I. V.; Поспелов, Г. И.; Pospelov G. I.; Наседкин, Б. А.; Nasedkin B. A.; Шереметьева, Ю. А.; Sheremet’eva A. Y.; Чиркин, А. С.; Chirkin A. S.; Московский государственный университет им. М.В. Ломоносова; Волны-2015. Всероссийская школа-семинар "Физика и применение микроволн" имени А.П. Сухорукова(15 ; 2015 ; 1-6 июня ; Можайск, Моск. обл.); "Физика и применение микроволн", Всероссийская школа-семинар имени А.П. Сухорукова(15 ; 2015 ; 1-6 июня ; Можайск, Моск. обл.)
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    Микрополосковый диплексер для радионавигационных систем ГЛОНАСС/GPS / А. А. Лексиков [и др.] // Изв. вузов. Физика. - 2015. - Т. 58, № 8/2. - С. 325-327. - Библиогр.: 5. - Работа выполнена при поддержке Министерства образования и науки РФ, соглашение №14-607-21-0039 . - ISSN 0021-3411
   Перевод заглавия: Microstrip diplexer for radio-navigation systems GLONASS/GPS
Кл.слова (ненормированные):
микрополосковый диплексер -- электромагнитное моделирование -- согласование -- ГЛОНАСС/GPS -- microstrip diplexer -- electromagnetic simulation -- matching -- GPS/GLONASS
Аннотация: Разработана и исследована новая конструкция микрополоскового диплексера для радионавигационных систем ГЛОНАСС/GPS, в которой предложен оригинальный способ согласования каналов с общим портом, существенно упрощающий настройку устройства. Каналы диплексера выполнены в виде трехзвенных полоснопропускающих фильтров на четвертьволновых микрополосковых резонаторах.
A new structure of microstrip diplexer for radio-navigation systems GLONASS/GPS is proposed and investigated. An original way for matching the diplexer’s channels with the common port is applied, which greatly simplifies designing the device. The diplexer’s channels comprise three-pole band-pass filters based on quarter-wave microstrip resonators.

Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Лексиков, Александр Александрович; Leksikov, Al. A.; Лексиков, Андрей Александрович; Leksikov, An. A.; Говорун, Илья Валерьевич; Govorun, I. V.; Афонин, А. О.; Угрюмов, Андрей Витальевич; Гребенников, А. В.
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    Исследование связи согласующей цепи c входными резонаторами каналов в микрополосковом диплексере / А. О. Афонин, А. А. Лексиков, И. В. Говорун [и др.] // Журн. СФУ. Техн. и технол. - 2020. - Т. 13, № 7. - С. 871-881 ; J. Sib. Fed. Univ. Engin. Technol., DOI 10.17516/1999-494X-0272. - Библиогр.: 11 . - ISSN 1999-494X. - ISSN 2313-6057
   Перевод заглавия: The Investigation of Coupling between Matching Circuit and Input Resonators of Channels in a Microstrip Diplexer
Кл.слова (ненормированные):
микрополосковый диплексер -- согласующая цепь -- регулярный нерезонансный отрезок микрополосковой линии -- коэффициенты связи -- квазистатическое приближение -- microstrip diplexer -- matching circuit -- regular non-resonant segment of microstrip line -- coupling coefficients -- quasi-TEM approach
Аннотация: В данной статье приведены результаты исследования коэффициентов связи согласующей цепи с входными резонаторами каналов в микрополосковом диплексере. Каналы диплексера представляют собой двухзвенные фильтры, а согласующая цепь – регулярный нерезонансный отрезок микрополосковой линии, помещенной между входными резонаторами каналов. Общий порт подключен к наружному концу отрезка, а его второй конец разомкнут. Исследования проводили теоретически с помощью компьютерной программы, разработанной на основе математических выражений, полученных применением одномерных моделей и квазистатического приближения. Результаты исследования показывают, что величина связи достаточно велика и использование согласующей цепи в виде нерезонансного отрезка микрополосковой линии позволяет проектировать диплексеры с широкими полосами пропускания каналов.
This paper deals with investigation of the coupling coefficients between the matching circuit and the input resonators of channels in a microstrip diplexer. Diplexer channels are two-section filters, and matching circuit is regular non-resonant segment of a microstrip line placed between input resonators of channels. The common port is connected to outer end of the segment and its second end is opened. Research was carried out theoretically using a computer program developed on the basis of mathematical expressions obtained by means of one-dimensional models and quasi-static approximation. The results show that a value of coupling is quite large and the use of the matching circuit in a form of a non-resonant segment of a microstrip line allows to design diplexers with wide fractional bandwidth of the channels.

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Институт физики им. Л.В. Киренского СО РАН Российская Федерация, Красноярск
Сибирский федеральный университет Российская Федерация, Красноярск

Доп.точки доступа:
Афонин, Алексей Олегович; Afonin, A. O.; Лексиков, Андрей Александрович; Leksikov, An. A.; Лексиков, Александр Александрович; Leksikov, A. A.; Говорун, Илья Валерьевич; Govorun, I. V.; Сержантов, Алексей Михайлович; Serzhantov, A. M.; Угрюмов, Андрей Витальевич; Ugryumov, A. V.

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Tarasov, I. A.
α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces / I. A. Tarasov, I. A. Bondarev, A. I. Romanenko // J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P. 851-861, DOI 10.1134/S1027451020040357. - Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Кл.слова (ненормированные):
iron silicide -- interface structure -- orientation relationship -- near coincidence site lattice -- edge-to-edge matching -- plane-to-plane matching
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.

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Держатели документа:
RAS, Kirensky Inst Phys, Fed Res Ctr, KSC,SB, Krasnoyarsk 660036, Russia.
RAS, Nikolaev Inst Inorgan Chem, SB, Novosibirsk 630090, Russia.

Доп.точки доступа:
Bondarev, I. A.; Бондарев, Илья Александрович; Romanenko, A. I.; Тарасов, Иван Анатольевич; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
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Three-wave mixing of ordinary and backward electromagnetic waves: Extraordinary transients in the nonlinear reflectivity and parametric amplification / V. V. Slabko [et al.] // Opt. Lett. - 2016. - Vol. 41, Is. 17. - P. 3976-3979, DOI 10.1364/OL.41.003976 . - ISSN 0146-9592
Кл.слова (ненормированные):
Amplification -- Circular waveguides -- Electromagnetic waves -- Mixing -- Nonlinear optics -- Phase matching -- Reflection -- Backward waves -- Energy fluxes -- Non-linear reflectivity -- Optical parametric amplification -- Parametric amplification -- Three wave mixing -- Transient process -- Optical parametric amplifiers
Аннотация: Three-wave mixing of ordinary and backward electromagnetic waves in a pulsed regime is investigated in the metamaterials that enable the coexistence and phase-matching of such waves. It is shown that the opposite direction of phase velocity and energy flux in backward waves gives rise to extraordinary transient processes due to greatly enhanced optical parametric amplification and frequency up- and down-shifting nonlinear reflectivity. The differences are illustrated through comparison with the counterparts in ordinary, co-propagating settings. © 2016 Optical Society of America.

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Держатели документа:
Siberian Federal University, 79 Svobodny Av., Krasnoyarsk, Russian Federation
Birck Nanotechnology Center, Purdue University, 1205 W State St., West Lafayette, IN, United States
L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Slabko, V. V.; Слабко, Виталий Васильевич; Popov, A. K.; Tkachenko, V. A.; Myslivets, S. A.; Мысливец, Сергей Александрович
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Vyunishev, A. M.
Theory of noncollinear frequency doubling of transform limited pulses in non-steady-state regime / A. M. Vyunishev, V. G. Arkhipkin, A. S. Chirkin // J. Opt. Soc. Am. B. - 2016. - Vol. 33, Is. 11. - P. 2308-2312, DOI 10.1364/JOSAB.33.002308. - Cited References: 22. - Council of the President of the Russian Federation (MK-2908.2015.2); Russian Foundation for Basic Research (RFBR) (15-02-03838); Krasnoyarsk Regional Fund for Science and Technical Activity Support. - The authors thank I. V. Timofeev for the fruitful discussions and theoretical support. . - ISSN 0740-3224
Кл.слова (ненормированные):
Band structure -- Frequency doublers -- Gaussian beams -- Nonlinear optics -- Phase matching -- Analytical expressions -- Frequency-doubling -- Interaction geometries -- Intersection angles -- Parametric interactions -- Phase matching conditions -- Spectral bandwidth -- Transform-limited pulse -- Harmonic generation
Аннотация: Noncollinear second-harmonic generation from two ultrashort pulses intersecting in a nonlinear medium is studied in spectral and time domains. We derive analytical expressions for the second-harmonic (SH) amplitude in crystals of finite thickness neglecting diffraction. The contribution from characteristics of the fundamental radiation and interaction geometry to the process is analyzed. In addition, refined phase-matching conditions are obtained. We find that the spectral bandwidth is determined by the intersection angle and can be enlarged. The SH pulse duration can be optimized by varying the fundamental beam size and the intersection angle. It is found that the SH beam excited by a Gaussian fundamental beam becomes elliptical. It is shown that the fundamental pulse duration can be readily characterized with single pulses by means of measuring the ellipticity of the SH beam profile. The approach developed can potentially be used to calculate parametric interactions of fundamental pulses with an arbitrary spectrum. © 2016 Optical Society of America.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Department of Photonics and Laser Technology, Siberian Federal University, Krasnoyarsk, Russian Federation
Laboratory for Nonlinear Optics and Spectroscopy, Siberian Federal University, Krasnoyarsk, Russian Federation
Faculty of Physics and International Laser Center, M.V. Lomonosov Moscow State University, Moscow, Russian Federation

Доп.точки доступа:
Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Chirkin, A. S.; Вьюнышев, Андрей Михайлович
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    Structure and optical properties of the Li2In2GeSe6 crystal / A. P. Yelisseyev [et al.] // J. Phys. Chem. C. - 2018. - Vol. 122, Is. 30. - P. 17413-17422, DOI 10.1021/acs.jpcc.8b02799. - Cited References: 49. - This work was supported by state assignment project #0330-2016-0008 and partly by the Russian Foundation of Basic Research (grants nos. 15-02-03408a, 17-45-540775r_a, and 17-52-53031), National Scientific Foundations of China (grants 11474292, 51702330, 11611530680, 91622118, and 91622124), the special foundation of the director of Technical Institute of Physics and Chemistry (TIPC), the China "863" project (no. 2015AA034203), and the Youth Innovation Promotion Association, CAS (outstanding member for Z.L. and grant 2017035 for X.J.). . - ISSN 1932-7447
   Перевод заглавия: Структура и оптические свойства в кристалле Li2In2GeSe6

РУБ Chemistry, Physical + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary
Рубрики:
PHASE-MATCHING PROPERTIES
TEMPERATURE-DEPENDENCE
ELECTRONIC-STRUCTURE
Аннотация: Intense search for new nonlinear optical crystals for the mid-infrared region is in progress, and Li-containing quaternary chalcogenides are expected to improve transparency range, stability, phase-matching conditions, and other parameters in comparison with commercially available AgGaS2, AgGaSe2, and ZnGeP2. Single crystals of Li2In2GeSe6 up to 8 mm in size were obtained by the Bridgman- Stockbarger growth technique, and their high quality was confirmed by exciton luminescence. A monoclinic structure and direct band-to-band electronic transitions were established, and the thermal expansion was shown to be virtually isotropic. Defect-related absorption and luminescence were revealed, and the way to lower them was suggested. The electronic structure, density of states, and some optical properties were calculated from the first principles for Li2In2GeSe6. The calculated nonlinear coefficients and rather large birefringence indicate a strong phase-matching ability. These investigations demonstrate that Li2In2GeSe6 is a promising mid-infrared nonlinear optical crystal.

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Держатели документа:
RAS, Sobolev Inst Geol & Mineral, 3 Ac Koptyug Ave, Novosibirsk 630090, Russia.
Novosibirsk State Univ, 2 Pyrogova St, Novosibirsk 630090, Russia.
RAS, SB, KSC, Lab Crystal Phys,Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk 660036, Russia.
Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China.
Univ Chinese Acad Sci, Beijing 100190, Peoples R China.

Доп.точки доступа:
Yelisseyev, A. P.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Jiang, Xingxing; Krinitsin, P. G.; Isaenko, L. I.; Lin, Zheshuai; Russian Foundation of Basic Research [15-02-03408a, 17-45-540775r_a, 17-52-53031]; National Scientific Foundations of China [11474292, 51702330, 11611530680, 91622118, 91622124]; special foundation of the director of Technical Institute of Physics and Chemistry (TIPC); China "863" project [2015AA034203]; Youth Innovation Promotion Association, CAS [2017035]; [0330-2016-0008]
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    Structure and optical properties of Li2Ga2GeS6 nonlinear crystal / L. I. Isaenko [et al.] // Opt. Mater. - 2015. - Vol. 47. - P. 413-419, DOI 10.1016/j.optmat.2015.06.014. - Cited References:23. - This work was supported by the Russian Foundation of Basic Research (Grant No. 15-02-03408a) . - ISSN 0925-3467
   Перевод заглавия: Структура и оптические свойства нелинейного кристалла Li2Ga2GeS6

РУБ Materials Science, Multidisciplinary + Optics
Рубрики:
PHASE-MATCHING PROPERTIES
   MID-IR
   PARAMETRIC AMPLIFICATION
   GENERATION
   LiGaS2
   GROWTH
   DAMAGE
   Ga
   Te
   Se
Кл.слова (ненормированные):
Li2Ga2GeS6 -- Structure -- Absorption -- Raman -- Luminescence -- Excitons
Аннотация: Structure and optical properties of new nonlinear crystal - Li2Ga2GeS6 single crystal of optical quality, grown by the Bridgman technique were studied. The data on transmission, Raman scattering, luminescence emission, excitation and thermal quenching as well as thermostimulated luminescence are presented. Fundamental absorption edge is determined by the direct allowed electronic transitions: The values of optical band gap are estimated. Absorption band at 8.0 mu m is due to S-S vibrations. Features in photoluminescence spectra are associated with excitons: both free (narrow line at 371 nm) and self-trapped ones (broad bands at 596, 730 and 906 nm). Spontaneous emission in the 80-170 K range, both at crystal heating and cooling, is typical of pyroelectrics: This confirms the absence of symmetry center in Li2Ga2GeS6 and an opportunity of laser frequency nonlinear conversion. (C) 2015 Elsevier B.V. All rights reserved.

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Держатели документа:
SB RAS, VS Sobolev Inst Geol & Mineral, Novosibirsk 630090, Russia.
Novosibirsk State Univ, Novosibirsk 630090, Russia.
SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia.
Far Eastern State Transport Univ, Khabarovsk 680021, Russia.

Доп.точки доступа:
Isaenko, L. I.; Исаенко Л. И.; Yelisseyev, A. P.; Елисеев, Александр Павлович; Lobanov, S. I.; Лобанов С. И.; Krinitsin, P. G.; Криницын, Павел Геннадьевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; Russian Foundation of Basic Research [15-02-03408a]
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Random quasi-phase-matching in a nonlinear photonic crystal structure of strontium tetraborate / A. S. Aleksandrovsky, A. M. Vyunishev, I. E. Shakhura [et al.] // PHYS. REV. A : APS, 2008. - P. 031802-1-031802-4DOI 10.1103/PhysRevA.78.031802. - Библиогр.: 20. - This work was supported by RFBR Grant No. 02-07-00497, Grants of the President of the Russian Federation for the support of leading scientific schools No. SS-1011.2008.2 and No. SS-3818.2008.3 , Grant No. RNP.2.1.1.1814, and the Interdisciplinary Integration project of SB RAS 33.

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Доп.точки доступа:
Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Vyunishev, A. M.; Вьюнышев, Андрей Михайлович; Shakhura, I. E.; Zaitsev, A. I.; Зайцев, Александр Иванович; Zamkov, A. V.; Замков, Анатолий Васильевич
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10.

    Random quasi-phase-matching in a nonlinear photonic crystal structure of strontium tetraborate / A. S. Aleksandrovsky [et al.] // Phys. Rev. A. - 2008. - Vol. 78, Is. 3. - Ст. 031802, DOI 10.1103/PhysRevA.78.031802. - Cited Reference Count: 20. - Гранты: This work was supported by RFBR Grant No. 02-0700497, Grants of the President of the Russian Federation for the support of leading scientific schools (No. SS-1011.2008.2 and No. SS-3818.2008.3), Grant No. RNP.2.1.1.1814, and the Interdisciplinary Integration project of SB RAS 33. - Финансирующая организация: RFBR [02-0700497]; Russian Federation [SS-1011.2008.2, SS-3818.2008.3, RNP.2.1.1.1814]; SB RAS 33 . - ISSN 1050-2947
Рубрики:
HARMONIC-GENERATION
   DOMAIN-STRUCTURE
Кл.слова (ненормированные):
Alkaline earth metals -- Crystal atomic structure -- Experiments -- Harmonic generation -- Photonic crystals -- Powders -- Random processes -- Strontium -- Angular dependences -- Enhancement factors -- Near ultraviolet -- Photonic Crystal structures -- Quasi phase-matching -- Second-harmonic generation -- Spectral dependences -- Tetra borate -- Crystal structure
Аннотация: Random quasi-phase-matching (RQPM) of the second-harmonic generation process is investigated experimentally and theoretically in a strongly randomized spontaneously grown nonlinear photonic crystal structure of strontium tetraborate. The thickness of domains in the structure is measured and employed in calculations of angular and spectral dependences of random quasi-phase-matching. Despite the great scale of randomness, the RQPM effect is preserved. The calculated enhancement factor due to RQPM is in excellent agreement with experiment, and good agreement between calculations and experiment is obtained for the shape of the angular dependence of RQPM. The calculated spectral dependence of RQPM consists of a number of narrow peaks, and a maximum enhancement factor is attained in the near ultraviolet. The band structure of randomized nonlinear photonic crystal is calculated.

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Держатели документа:
Akademgorodok, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660079, Russia

Доп.точки доступа:
Aleksandrovsky, A. S.; Александровский, Александр Сергеевич; Zaitsev, A. I.; Зайцев, Александр Иванович; Shakhura, I. E. ; Zamkov, A. V.; Замков, Анатолий Васильевич; Vyunishev, A. M.; Вьюнышев, Андрей Михайлович
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