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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Visotin M. A., Tarasov I. A., Fedorov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [16-13-00060-Pi]
Место публикации : Acta Crystallogr. B. - 2020. - Vol. 76. - P.469-482. - ISSN 2052-5206(eISSN), DOI 10.1107/S2052520620005727
Примечания : Cited References: 85. - The following funding is acknowledged: Russian Science Foundation (grant No. 16-13-00060-Pi).
Предметные рубрики: THERMAL-EXPANSION
BETA-FESI2 FILMS
GROWTH
SILICON
DIFFRACTION
Аннотация: A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov I. A., Bondarev I. A., Romanenko A. I.
Заглавие : α-FeSi2 as a buffer layer for β-FeSi2 growth: analysis of orientation relationships in silicide/Silicon, silicide/silicide heterointerfaces
Коллективы : Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-42-243013]; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation; Siberian Branch of the Russian Academy of SciencesRussian Academy of Sciences [II.8.70]
Место публикации : J. Surf. Ingestig. - 2020. - Vol. 14, Is. 4. - P.851-861. - ISSN 1027-4510, DOI 10.1134/S1027451020040357. - ISSN 1819-7094(eISSN)
Примечания : Cited References: 74. - The work was supported by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project no. 18-42-243013. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70)
Предметные рубрики: β-FeSi2 thin-films
Thermal-expansion
Phase-transformation
Аннотация: In this manuscript, we attempt to clarify the capability of utilisation of α-FeSi2 nanocrystals as a buffer layer for growth of monocrystalline/high-quality β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Iron silicides-based nanostructures have a wide spectrum of possible industrial applications in different fields. Mainly, interest in these functional materials is caused by their ecological safety and Earth’s core abundance that give us the opportunity for greener future with highly effective electronic devices. β-FeSi2 phase due to its allowed direct transition with energy close to 0.87 eV can be used as active material in light emission diodes (LED). Utilisation of buffer layers between silicon substrate and give one more tool to engineer the band structure of semiconducting β‑FeSi2 phase. We attempt to clarify the capability of the utilisation of the α-FeSi2 phase as a buffer layer for the growth of β-FeSi2 direct-gap semiconductor from the point of view of the crystal lattice misfits and near coincidence site (NCS) lattices. Possible β-FeSi2/α-,γ-,s-FeSi2/Si orientation relationships (ORs) and habit planes were examined with crystallogeometrical approaches and compared with β-FeSi2/Si ones. The lowest interplanar and interatomic spacing misfits between silicon lattice and a silicide one are observed for the pair of s-FeSi2{011}[200]/Si{022}[100] at room temperature and equal to –0.57%. The least interplanar and interatomic spacing misfit of 1.7 and 1.88%, respectively, for β-FeSi2/Si, can be decreased as low as –0.67 (interplanar) and 0.87 (interatomic) % by placing an α-FeSi2 layer between silicon and β-FeSi2 phase. It is stated that the growth of metastable γ-FeSi2 is also favourable on silicon due to low interplanar and interatomic spacing misfit (–0.77%) and a higher density of NCS in comparison with s-FeSi2. Design and technological procedure for the synthesis of possible β-FeSi2/α-FeSi2/Si heterostructure have been proposed based on the results obtained.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Афонин, Алексей Олегович, Лексиков, Андрей Александрович, Лексиков, Александр Александрович, Говорун, Илья Валерьевич, Сержантов, Алексей Михайлович, Угрюмов, Андрей Витальевич
Заглавие : Исследование связи согласующей цепи c входными резонаторами каналов в микрополосковом диплексере
Место публикации : Журн. СФУ. Техн. и технол. - 2020. - Т. 13, № 7. - С. 871-881. - ISSN 1999-494X (ISSN), DOI 10.17516/1999-494X-0272; J. Sib. Fed. Univ. Engin. Technol. - ISSN 2313-6057 (eISSN)
Примечания : Библиогр.: 11
Аннотация: В данной статье приведены результаты исследования коэффициентов связи согласующей цепи с входными резонаторами каналов в микрополосковом диплексере. Каналы диплексера представляют собой двухзвенные фильтры, а согласующая цепь – регулярный нерезонансный отрезок микрополосковой линии, помещенной между входными резонаторами каналов. Общий порт подключен к наружному концу отрезка, а его второй конец разомкнут. Исследования проводили теоретически с помощью компьютерной программы, разработанной на основе математических выражений, полученных применением одномерных моделей и квазистатического приближения. Результаты исследования показывают, что величина связи достаточно велика и использование согласующей цепи в виде нерезонансного отрезка микрополосковой линии позволяет проектировать диплексеры с широкими полосами пропускания каналов.This paper deals with investigation of the coupling coefficients between the matching circuit and the input resonators of channels in a microstrip diplexer. Diplexer channels are two-section filters, and matching circuit is regular non-resonant segment of a microstrip line placed between input resonators of channels. The common port is connected to outer end of the segment and its second end is opened. Research was carried out theoretically using a computer program developed on the basis of mathematical expressions obtained by means of one-dimensional models and quasi-static approximation. The results show that a value of coupling is quite large and the use of the matching circuit in a form of a non-resonant segment of a microstrip line allows to design diplexers with wide fractional bandwidth of the channels.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Krinitsin, Pavel, Yelisseyev, Alexander, Jiang, Xingxing, Isaenko, Lyudmila, Molokeev M. S., Lin, Zheshuai, Pugachev, Alexey
Заглавие : Growth, Structure, and Optical Properties of Nonlinear LiGa0.55In0.45Te2 Single Crystals
Коллективы : Russian Foundation of Basic Research [15-02-03408a, 17-45-540775r_a, 17-52-53031]; national scientific foundations of China [11474292, 51702330, 11611530680, 91622118, 91622124]; special foundation of the director of Technical Institute of Physics and Chemistry (TIPC); China "863" project [2015AA034203]; Youth Innovation Promotion Association, CAS [2017035]; [0330-2016-0008]
Место публикации : Cryst. Growth Des. - 2019. - Vol. 19, Is. 3. - P.1805-1814. - ISSN 1528-7483, DOI 10.1021/acs.cgd.8b01788. - ISSN 1528-7505(eISSN)
Примечания : Cited References: 43. - This work was supported by state assignment project #0330-2016-0008 and partially by the Russian Foundation of Basic Research (Grant Nos. 15-02-03408a, 17-45-540775r_a, and 17-52-53031), national scientific foundations of China (Grant Nos. 11474292, 51702330, 11611530680, 91622118, and 91622124), the special foundation of the director of Technical Institute of Physics and Chemistry (TIPC), the China "863" project (No. 2015AA034203) and the Youth Innovation Promotion Association, CAS (outstanding member for Z.L. and Grant 2017035 for X.J.). Some part of the experiments was performed in the multiple-access center "High-Resolution Spectroscopy of Gases and Condensed Matter" at the IA&E SBRAS (Novosibirsk, Russia). The authors are grateful to N. F. Beisel from the Analytical laboratory of the Nikolaev Institute of Inorganic Chemistry SB RAS for atomic-emission spectral analysis of the studied crystals.
Предметные рубрики: PHASE-MATCHING PROPERTIES
ELECTRONIC-STRUCTURE
MID-IR
Аннотация: In search of new nonlinear optical crystals for the mid-IR range, we grew single crystals of LiGa0.55In0.45Te2 (LGITe) of optical quality; its structure was established, and the spectroscopic properties were studied. LGITe crystallizes in a tetragonal chalcopyrite-like (I4̅2d) structure at 667 ± 5 °C. Crystals are transparent in the 0.76–14.8 μm spectral region with some absorption bands related to OH/H2O and Ge–O vibrations. Analysis of the Tauc plots showed that LGITe is a direct band gap semiconductor with the band gap Eg = 1.837 eV at 300 K. The Raman spectrum for LGITe is very similar to that for LiGaTe2: the most intense band A1 near 120 cm–1 corresponds to the Li–Te vibration. DFT calculations were carried out for the first time to simulate the energy band structure (band gap ∼1.67 eV), density of states (DOS), birefringence (0.049 at 2 μm), and nonlinear susceptibility (d14 = d36 = −48.73 pm/V). For ternary LiInTe2 these parameters are Δn = 0.007 and d14 = d36 = −61.4 pm/V, respectively. The calculated optical properties indicate that LiGa0.55In0.45Te2 is a promising mid-IR nonlinear optical crystal with nonlinear parameters higher than those of LiGaTe2.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Leksikov A. A., Serzhantov A. M., Govorun I. V., Afonin A. O., Ugryumov A. V., Leksikov An. A.
Заглавие : Microstrip diplexer with Π-shaped matching circuit
Место публикации : Prog. Electromagn. Res. Lett. - 2020. - Vol. 88. - P.59-65. - ISSN 19376480 (ISSN), DOI 10.2528/PIERL19083005
Примечания : Cited References: 15. - The work is supported by the Ministry of science and highest education of the Russian Federation (contract #03.G25.31.0279).
Аннотация: We propose a new method to match diplexer channels with a common port in which a Π-shaped strip conductor is used as a matching circuit. The applicability of the method is illustrated by simulating and fabricating a microstrip diplexer for GPS/GLONASS applications. The central frequencies of the channels are 1.234 GHz and 1.597 GHz, and their fractional bandwidths are 6.8% and 7.3%, respectively; minimum insertion losses are 1.05 dB and 1.08 dB. The main advantage of the diplexer is its compact size: 16.8 mm × 9.0 mm × 6.4 mm in housing. Using 1D models and a quasi-TEM approach, the frequency-dependent coupling coefficients between the matching circuit and input resonators of the channels are calculated, and the influence of the matching circuit’s geometrical parameters on its coupling with diplexer channels is studied. © 2020, Electromagnetics Academy. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vyunishev A. M., Arkhipkin V. G.
Заглавие : Quasi-phase-matched second-harmonic generation in nonlinear crystals with harmonic modulation of nonlinearity
Место публикации : Laser Phys. - 2020. - Vol. 30, Is. 4. - Ст.045401. - ISSN 1054660X (ISSN), DOI 10.1088/1555-6611/ab7381
Примечания : Cited References: 20
Аннотация: We propose a new type of nonlinear photonic crystal with the lattice representing a harmonic function of the propagation coordinate. This type of spatial modulation of the quadratic nonlinearity is implemented to enhance the second-harmonic generation (SHG) efficiency. The process resembles that realized in periodic nonlinear photonic crystals with rectangular nonlinearity modulation under quasi-phase-matching. Residual periodic oscillations of the second-harmonic intensity were found. Comparison of the unipolar and bipolar modulations showed that they are equivalent with regard to the oscillations. The SHG efficiency in the harmonic lattices is 1.6 times lower compared with the efficiency corresponding to the quasi-phase-matching in periodic nonlinear photonic crystals with rectangular lattices.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Aleksandrovsky A.S., Vyunishev A.M., Zaitsev A.I., Ikonnikov A.A., Pospelov G.I., Slabko V.V.
Заглавие : Phase matched conversion of radiation in nonlinear photonic crystals of strontium tetraborate
Место публикации : Proceedings of SPIE - The International Society for Optical Engineering. - 2011. - Vol. 7993: ICONO 2010: International Conference on Coherent and Nonlinear Optics (23 August 2010 through 26 August 2010, Kazan, ) Conference code: 83828. - ISBN 0277786X (ISSN); 9780819485663 (ISBN), DOI 10.1117/12.872943
Ключевые слова (''Своб.индексиров.''): nonlinear photonic crystal--random quasi phase matching--second harmonic generation--strontium tetraborate--average power--deep uv--enhancement factor--fs pulse--monodomains--nonlinear photonic crystals--quasi-phase-matched frequency doubling--radiation source--random quasi phase matching--rotational shift--second harmonic generation--tetraborate--tuning ranges--band structure--harmonic generation--nonlinear optics--optical materials--phase matching--quantum optics--strontium--photonic crystals
Аннотация: Random quasi-phase-matched frequency doubling of fs pulses to the deep UV was obtained in 1D nonlinear photonic crystal (NPC) of strontium tetraborate. Tuning range of generated radiation is from 187.5 to 215 nm. The spectrum of generated radiation consists from series of peaks with the width of order of 1 A. These peaks are the manifestation of the NPC band structure. Using fs oscillator as the fundamental radiation source, maximum average power of generated radiation is of order 1 ?W, the enhancement factor with respect to monodomain sample being of order of several hundred. The red rotational shift of NPC band structure is experimentally demonstrated. © 2011 SPIE.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Aleksandrovsky A. S., Arkhipkin V. G., Kuzey I. E. , Vyunishev A. M., Zaitsev A. I., Zamkov A. V.
Заглавие : Nonlinear optical characterization of spontaneously grown domain structures in SBO crystals
Место публикации : Proceedings of SPIE - The International Society for Optical Engineering. - 2007. - Vol. 6729: ICONO 2007: Coherent and Nonlinear Optical Phenomena (28 May 2007 through 1 June 2007, Minsk, ) Conference code: 70618. - ISBN 0277786X (ISSN); 081946886X (ISBN); 9780819468864 (ISBN), DOI 10.1117/12.751986
Ключевые слова (''Своб.индексиров.''): domains--nonlinear crystals--nonlinear diffraction--nonlinear generation--quasi phase matching--nonlinear crystals--nonlinear diffraction--nonlinear generation--quasi phase matching--computation theory--crystal growth--crystal structure--crystallography--diffraction--phase matching--nonlinear optics
Аннотация: Spontaneously grown partially ordered domain structures in SBO crystals are characterized via nonlinear diffraction. Domains have the form of sheets lying in cb plane with the domain walls oriented perpendicularly to the a crystallographic axis. The thickness of domains varies in quite wide range. The effective thickness of domains contributing to the nonlinear diffraction is determined from Fourier spectrum of inverse superlattice wave vectors to lie between 180 nm and 8 microns. General properties of spatial Fourier spectrum are reproducible from one growth procedure to another, however, details of spectrum noticeably vary. Enhancement factors for random QPM are calculated and found to be of order of several thousand in the near UV.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kubitza, Niels, Xie, Ruiwen, Tarasov I. A., Shen, Chen, Zhang, Hongbin, Wiedwald, Ulf, Birkel, Christina S.
Заглавие : Microwave-assisted synthesis of the new solid-solution (V1–xCrx)2GaC (0 ≤ x ≤ 1), a Pauli paramagnet almost matching the Stoner criterion for x = 0.80
Место публикации : Chem. Mater. - 2023. - Vol. 35, Is. 11. - P.4427-4434. - ISSN 08974756 (ISSN), DOI 10.1021/acs.chemmater.3c00591. - ISSN 15205002 (eISSN)
Примечания : Cited References: 54. - This work has been supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) within CRC/TRR 270, projects B03 and B02, A05 (Project-ID 405553726)
Аннотация: MAX phases that exhibit long-range magnetic order in the bulk are still very hard to synthesize. Chromium and manganese are the cutoff elements when transitioning through the 3dmetals that still form stable full and doped MAX phases, respectively. An iron-based (on the M-site) bulk MAX phase does not exist. Therefore, other strategies to induce long-range magnetic ordering in bulk MAX phases are necessary to open the path to new functional materials. Here, we demonstrate the nonconventional synthesis of a hitherto unknown MAX phase solid-solution (V1–xCrx)2GaC by microwave heating. The full series with 0 ˂ x ˂ 1 (x = 0.20, 0.40, 0.50, 0.60, 0.80) forms almost single phase with minimal differences in their morphology. Their magnetic properties, however, differ rather significantly, with a maximum susceptibility around x = 0.80. Both the experimental and theoretical/ab initio magnetic analysis confirm that the solid-solution (V1–xCrx)2GaC is an itinerant Pauli paramagnet that almost fulfills the Stoner criterion for ferromagnetic order (for compositions with x around 0.80). This is a powerful insight into how chemical composition couples with electronic structure and the resulting bulk magnetic properties because it provides crucial guidelines to produce long-range ordered magnetic MAX phases.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dai X., Zou X., Zhang H., Chen W., Yang C., Molokeev M. S., Xia Z., Liu Y., Zhang X., Zheng M., Lei B.
Заглавие : Novel Cr3+-doped garnet phosphor with broadband efficient far-red emission for photochrome matching plant-lighting
Колич.характеристики :9 с
Место публикации : Adv. Opt. Mater. - 2024. - Vol. 12, Is. 11. - Ст.2302380. - ISSN 21951071 (eISSN), DOI 10.1002/adom.202302380
Примечания : Cited References: 54. - The work was supported by the National Natural Science Foundations of China (No. 12274144), the Guangdong Provincial Special Fund for Modern Agriculture Industry Technology Innovation Teams (No. 2023KJ122), the Key Realm R&D Program of Guangdong Province (No. 2021B0707010003), the Guangdong Provincial Science and Technology Project (No. 2022A1515010229), and the Project of GDUPS (2018) for Prof. Bingfu LEI
Аннотация: Cr3+-doped phosphors are highly recognized in various fields for their remarkable luminous efficiency and spectral flexibility, including modern agriculture and horticulture. However, the shortage of suitable Cr3+-doped phosphors for far-red LED devices has inhibited their popularization in plant lighting. Herein, an innovative Cr3+-doped phosphor Ca2YAl3Ge2O12:Cr3+ (CYAG:Cr3+), achieving a broad far-red emission at 770 nm upon 450 nm blue light excitation is designed. The optimal CYAG:Cr3+ phosphor exhibits a high internal quantum yield of 78.2% and low thermal-quenching behavior of 85%@373 K. Thus, the fabricated phosphor-converted LEDs (pc-LEDs) for plant far-red lighting have a high output power of 33.3 mW and photovoltaic conversion efficiency of 11.5% at 100 mA. The potential of CYAG:Cr3+ in plant lighting is assessed by supplementing the far-red lighting of Italian lettuce with fabricated pc-LEDs, and the biomass of Italian lettuce is significantly increased by 33%. The successful development of CYAG:Cr3+ phosphors provides a high-quality option for plant far-red light devices and further stimulates the development of new Cr3+-doped plant-lighting phosphors.
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