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KRUSTALEV, B. P.
EXCHANGE INTERACTIONS IN SUPERPARAMAGNETIC NANOCLUSTER FILMS FE-SIO / B. P. KRUSTALEV, A. D. BALAEV, V. M. SOSNIN // Solid State Commun. - 1995. - Vol. 95, Is. 5. - P. 271-275, DOI 10.1016/0038-1098(95)00264-2. - Cited References: 9 . - ISSN 0038-1098

РУБ Physics, Condensed Matter

Кл.слова (ненормированные):
NANOSTRUCTURES -- THIN FILMS -- EXCHANGE AND SUPEREXCHANGE
Аннотация: The magnetic properties of superparamagnetic films Fe-SiO have been investigated. It has been shown that a proper consideration of intra- and intercluster interactions describes well the magnetic behavior of the films. Their main parameters have been determined. On the basis of a proposed cluster model, the decrease of the effective magnetic moment per one iron atom is explained.

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Доп.точки доступа:
BALAEV, A. D.; Балаев, Александр Дмитриевич; SOSNIN, V. M.; Соснин, Виктор Михайлович
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Resonant tunneling in time-periodically modulated semiconductor nanostructures / G. P. Berman [et al.] // Physica B. - 1996. - Vol. 225, Is. 1-2. - P. 1-22, DOI 10.1016/0921-4526(96)00233-5. - Cited References: 39 . - ISSN 0921-4526

РУБ Physics, Condensed Matter
Рубрики:
DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.

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Держатели документа:
LOS ALAMOS NATL LAB,CNLS,LOS ALAMOS,NM 87545
LV KIRENSKII INST PHYS,DEPT PHYS,KRASNOYARSK 660036,RUSSIA
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ИФ СО РАН

Доп.точки доступа:
Berman, G. P.; Берман, Геннадий Петрович; Bulgakov, E. N.; Булгаков, Евгений Николаевич; Campbell, D. K.; Sadreev, A. F.; Садреев, Алмаз Фаттахович
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Spontaneous magnetization and characteristics of temperature-induced magnetization of planar Co/Si nanostructures / V. O. Vas'kovskii [et al.] // Low Temp. Phys. - 2007. - Vol. 33, Is. 4. - P. 324-328 ; Физика низких температур, DOI 10.1063/1.2720079. - Cited References: 9 . - ISSN 1063-777X

РУБ Physics, Applied
Рубрики:
MULTILAYERS
FILMS
Аннотация: The magnetic properties of planar Co/Si nanostructures with different nominal thicknesses of the magnetic (2-42 nm) and nonmagnetic (0.3-10 nm) constituent layers are studied in the temperature range 4.2-300 K. It is established that in the presence of Si layers the spontaneous magnetization of Co decreases and its temperature dependence changes, and magnetic hysteresis is modified. The interlayer influence is interpreted as being due to the diffusion of Si into the Co layers, which results in the formation of magnetically disordered boundary interfaces with low average magnetization. The depth of the interfaces depends on the nominal thickness of the Si layers and is estimated to reach 1.6 nm. A qualitative explanation of the characteristics of the magnetization of the experimental objects under the influence of a magnetic field and temperature is given in a model where the interfaces have a granular microstructure. Electron-microscope observations confirm some assumptions of the proposed model. (C) 2007 American Institute of Physics.

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Держатели документа:
AM Gorkil Ural State Univ, Ekaterinburg 620083, Russia
Russian Acad Sci, Siberian Branch, LV Kirenskii Phys Inst, Krasnoyarsk 660036, Russia
Russian Acad Sci, Ural Branch, Inst Phys Met, Ekaterinburg 620241, Russia
ИФ СО РАН
A. M. Gor'kii Ural State University, pr. Lenina 51, Ekaterinburg 620083, Russian Federation
L. V. Kirenskii Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation
Institute of the Physics of Metals, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Ekaterinburg 620241, Russian Federation

Доп.точки доступа:
Vas'kovskii, V. O.; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Svalov, A. V.; Shchegoleva, N. N.

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Chernozatonskii, L. A.
Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms / L. A. Chernozatonskii, P. B. Sorokin, J. W. Bruning // Appl. Phys. Lett. - 2007. - Vol. 91, Is. 18. - Ст. 183103, DOI 10.1063/1.2800889. - Cited References: 24 . - ISSN 0003-6951

РУБ Physics, Applied
Рубрики:
CARBON
GAS
Кл.слова (ненормированные):
Electronic properties -- Energy gap -- Graphite -- Hydrogen -- Semiconductor materials -- Superlattices -- Electronic spectra -- Graphene sheets -- Quasi-two-dimensional heterostructures -- Semiconducting nanostructures -- Nanostructured materials
Аннотация: It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the formation of 2HG-SL changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with n, but with nonzero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of zigzag strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. (C) 2007 American Institute of Physics.

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Держатели документа:
Russian Acad Sci, Emanuel Inst Biochem Phys, Moscow 119334, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Humboldt Univ, Math Inst, D-12489 Berlin, Germany
ИФ СО РАН
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, 4 Kosigina St., Moscow 119334, Russian Federation
Siberian Federal University, 79 Svobodny Ave., Krasnoyarsk 660041, Russian Federation
Kirensky Institute of Physics, Russian Academy of Sciences, Academgorodok, Krasnoyarsk 660036, Russian Federation
Institute of Mathematics, Humboldt University of Berlin, Berlin 12489, Germany

Доп.точки доступа:
Sorokin, P. B.; Bruning, J. W.
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Size effects and magnetization of (Fe/Si)(n) multilayer film nanostructures / S. N. Varnakov [et al.] // Phys. Solid State. - 2007. - Vol. 49, Is. 8. - P. 1470-1475, DOI 10.1134/S1063783407080124. - Cited References: 36 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
GIANT MAGNETORESISTANCE
   FE/SI MULTILAYERS
   ULTRAHIGH-VACUUM
   SUPERLATTICES
   EXCHANGE
   RESONANCE
   LAYER
Аннотация: The temperature dependence of the magnetization of (Fe/Si) (n) multilayer films with nanometer layers is investigated. The films are prepared through thermal evaporation under ultrahigh vacuum onto Si(100) and Si(111) single-crystal substrates. It is revealed that the thickness of individual iron layers in (Fe/Si) (n) multilayer films affects the magnetization and its temperature dependence. The inference is made that this dependence is associated with the formation of a chemical interface at the Fe-Si boundaries. The characteristics of the chemical interface in the (Fe/Si) (n) films are estimated.

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Публикация на русском языке Размерные эффекты и намагниченность многослойных пленочных наноструктур (Fe/Si)[n] [Текст] / С. Н. Варнаков [и др.] // Физ. тверд. тела. - 2007. - Т. 49 Вып. 8. - С. 1401-1405

Держатели документа:
Russian Acad Sci, Siberian Div, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Airospace Univ, Krasnoyarsk 660014, Russia
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, Zaragoza 50009, Spain
Univ Zaragoza, Inst Nanociencia Aragon, Zaragoza 50009, Spain
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok Krasnoyarsk 660036, Russian Federation
Siberian Airospace University, pr. im. gazety Krasnoyarskii R. 31, Krasnoyarsk 660014, Russian Federation
Instituto de Ciencia de Materiales de Aragon, CSIC-Universidad de Zaragoza, Zaragoza 50009, Spain
Instituto de Nanociencia de Aragon, Universidad de Zaragoza, Zaragoza 50009, Spain

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Bartolome, J.; Sese, J.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Parshin, A. S.; Bondarenko, G. V.; Бондаренко, Геннадий Васильевич; Borovik-Romanova, O. \пер.\
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Arc synthesis of silicon-doped heterofullerenes in plasma at atmospheric pressure / N. V. Bulina [et al.] // Fullerenes Nanotubes and Carbon Nanostructures. - 2007. - Т. 15, № 5. - С. 395-400, DOI 10.1080/15363830701512229 . - ISSN 1536-383X. - ISSN 1536-4046

ГРНТИ

РИНЦ
Держатели документа:
Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences
Max-Planck-Institut fur Kernphysik
Доп.точки доступа:
Bulina, N. V.; Булина, Наталья Васильевна; Lopatin, V. A.; Лопатин, Владислав Александрович; Vnukova, N. G.; Внукова, Наталья Григорьевна; Osipova, I. V.; Осипова, Ирина Владимировна; Churilov, G. N.; Чурилов, Григорий Николаевич; Krtschmer, W.
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The model of resonant domain of metal nanoparticle aggregates in pulsed laser fields / A. P. Gavrilyuk, S. V. Karpov // Proceedings of SPIE - The International Society for Optical Engineering / sponsors: SPIE Russia Chapter, National Academy of Sciences, Belarus, Russian Academy of Sciences, Belarus Foundation for Basic Research, Russian Physical Society ; ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures (2007 ; 28.05 - 01.06 ; Минск) : S P I E - International Society for Optical Engineering, 2007. - 6728. - С. 67281T, DOI 10.1117/12.752386 . - ISBN 0819468851

ГРНТИ

31.15

РИНЦ,
Источник статьи
Держатели документа:
Institute of Computational Modeling,Russian Academy of Science
Institute of Physics,Russian Academy of Science
Доп.точки доступа:
sponsors: SPIE Russia Chapter, National Academy of Sciences, Belarus, Russian Academy of Sciences, Belarus Foundation for Basic Research, Russian Physical Society; Gavrilyuk, A. P.; Karpov, S. V.; Карпов, Сергей Васильевич; ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures(2007 ; 28.05 - 01.06 ; Минск)
Нет сведений об экземплярах (Источник в БД не найден)
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Churilov, G. N.
Synthesis of fullerenes and other nanomaterials in arc discharge / G. N. Churilov // Fullerenes Nanotubes and Carbon Nanostructures. - 2008. - Т. 16, № 5-6. - P395-403, DOI 10.1080/15363830802281641 . - ISSN 1536-383X. - ISSN 1536-4046

ГРНТИ

РИНЦ
Держатели документа:
Kirensky Institute of Physics,Siberian Branch,Russian Academy of Science
L.V. Kirensky Institute of Physic
Доп.точки доступа:
Чурилов, Григорий Николаевич
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Quantum dots embedded into silicon nanowires effectively partition electron confinement / P. V. Avramov [et al.] // J. Appl. Phys. - 2008. - Vol. 104, Is. 5. - Ст. 54305, DOI 10.1063/1.2973464. - Cited References: 22. - This work was, in part, partially supported by a Core Research for Evolutional Science and Technology (CREST) grant in the area of high performance computing for multi-scale and multiphysics phenomena from the Japan Science and Technology Agency (JST) as well as by the Russian Fund of Basic Researches (Grant No. 05-02-17443) (L.A.C.). One of the authors (P.V.A.) acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute. The geometry of all presented structures was visualized by ChemCraft software. SUP23/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations. . - ISSN 0021-8979

РУБ Physics, Applied
Рубрики:
OPTICAL-PROPERTIES
   POROUS SILICON
   WIRES
   PREDICTION
   GROWTH
Кл.слова (ненормированные):
Electric currents -- Electric wire -- Electronic states -- Electronic structure -- Nanostructured materials -- Nanostructures -- Nanowires -- Nonmetals -- Optical waveguides -- Plasma confinement -- Quantum confinement -- Quantum electronics -- Semiconducting silicon compounds -- Silicon -- electronic state -- Band gaps -- Electron confinements -- Electronic-structure calculations -- Embedded structures -- Quantum confinement effect -- Quantum dots -- Semi-empirical methods -- Silicon nanowires -- Silicon quantum dots -- Semiconductor quantum dots
Аннотация: Motivated by the experimental discovery of branched silicon nanowires, we performed theoretical electronic structure calculations of icosahedral silicon quantum dots embedded into pentagonal silicon nanowires. Using the semiempirical method, we studied the quantum confinement effect in the fully optimized embedded structures. It was found that (a) the band gaps of the embedded structures are closely related to the linear sizes of the longest constituting part rather than to the total linear dimension and (b) the discovered atypical quantum confinement with a plateau and a maximum can be attributed to the substantial interactions of near Fermi level electronic states of the quantum dots and nanowire segments. (c) 2008 American Institute of Physics.

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Держатели документа:
[Avramov, Pavel V.] Kyoto Univ, Fukui Inst Fundamental Chem, Kyoto 6068103, Japan
[Fedorov, Dmitri G.] Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan
[Sorokin, Pavel B.
Ovchinnikov, Sergei G.] LV Kirensky Inst Phys SB RAS, Krasnoyarsk 660036, Russia
[Sorokin, Pavel B.
Ovchinnikov, Sergei G.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Sorokin, Pavel B.
Chernozatonskii, Leonid A.] RAS, NM Emanuel Inst Biochem Phys, Moscow 119334, Russia
ИФ СО РАН
Fukui Institute for Fundamental Chemistry, Kyoto University, 34-3 Takano Nishihiraki, Sakyo, Kyoto 606-8103, Japan
Research Institute for Computational Science, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8568, Japan
L.V. Kirensky Institute of Physics, SB, RAS, 660036 Krasnoyarsk, Russian Federation
Siberian Federal University, 79 Svobodny Av., 660041 Krasnoyarsk, Russian Federation
N.M. Emanuel Institute of Biochemical Physics, RAS, 119334 Moscow, Russian Federation

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Fedorov, D. G.; Sorokin, P. B.; Chernozatonskii, L. A.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
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10.

    Atypical quantum confinement effect in silicon nanowires / P. B. Sorokin [et al.] // J. Phys. Chem. A. - 2008. - Vol. 112, Is. 40. - P9955-9964, DOI 10.1021/jp805069b. - Cited Reference Count: 25. - Гранты: This work was in part partially supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) as well as by Russian Fund of Basic Researches (grant 08-02-01096) (L.A.C.). P.V.A. acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute for Fundamental Chemistry. The geometry of all presented structures was visualized by ChemCraft software.SUP25/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations. - Финансирующая организация: Japan Science and Technology Agency (JST); Russian Fund of Basic Researches [08-02-01096] . - OCT 9. - ISSN 1089-5639
Рубрики:
ELECTRONIC-STRUCTURE
   OPTICAL-PROPERTIES
   SI
   DENSITY
   WIRES
   EXCHANGE
   ATOMS
   DOTS
Кл.слова (ненормированные):
Electric wire -- Energy gap -- Gallium alloys -- Mathematical models -- Nanostructured materials -- Nanostructures -- Nanowires -- Quantum confinement -- Quantum electronics -- Semiconductor quantum dots -- Silicon -- Ami methods -- Band gaps -- Blue shifts -- Dinger equations -- Linear junctions -- Monotonic decreases -- Quantum confinement effects -- Quantum dots -- Semiempirical -- Silicon nanowires -- System sizes -- Theoretical models -- Nanocrystalline silicon -- nanowire -- quantum dot -- silicon -- article -- chemistry -- electron -- quantum theory -- Electrons -- Nanowires -- Quantum Dots -- Quantum Theory -- Silicon
Аннотация: The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.

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Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia
LV Kirenskii Inst Phys, SB RAS, Krasnoyarsk 660036, Russia
RAS, N M Emanuel Inst Biochem Phys, Moscow 119334, Russia
Kyoto Univ, Fukui Inst Fundamental Chem, Kyoto 6068103, Japan
Natl Inst Adv Ind Sci & Technol, Res Inst Computat Sci, Tsukuba, Ibaraki 3058568, Japan

Доп.точки доступа:
Sorokin, P. B.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Avramov, P. V.; Chernozatonskii, L.A.; Fedorov, D.G.
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