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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : KRUSTALEV B. P., BALAEV A. D., SOSNIN V. M.
Заглавие : EXCHANGE INTERACTIONS IN SUPERPARAMAGNETIC NANOCLUSTER FILMS FE-SIO
Место публикации : Solid State Commun.: PERGAMON-ELSEVIER SCIENCE LTD, 1995. - Vol. 95, Is. 5. - P271-275. - ISSN 0038-1098, DOI 10.1016/0038-1098(95)00264-2
Примечания : Cited References: 9
Ключевые слова (''Своб.индексиров.''): nanostructures--thin films--exchange and superexchange
Аннотация: The magnetic properties of superparamagnetic films Fe-SiO have been investigated. It has been shown that a proper consideration of intra- and intercluster interactions describes well the magnetic behavior of the films. Their main parameters have been determined. On the basis of a proposed cluster model, the decrease of the effective magnetic moment per one iron atom is explained.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Berman G. P., Bulgakov E. N., Campbell D. K., Sadreev A. F.
Заглавие : Resonant tunneling in time-periodically modulated semiconductor nanostructures
Место публикации : Physica B. - 1996. - Vol. 225, Is. 1-2. - P.1-22. - ISSN 0921-4526, DOI 10.1016/0921-4526(96)00233-5
Примечания : Cited References: 39
Предметные рубрики: DOUBLE BARRIERS
TRANSMISSION
HETEROSTRUCTURES
Аннотация: We consider a semiconductor (AlGaAs/GaAs/AlGaAs) double-barrier resonant tunneling nanostructure (DBRTS), in which the bottom of the potential well is modulated by an external periodic potential V(t) = V-mod cos Omega t. We examine the resonance response to both mono-energetic and spatially localized incident electrons, extending previous results in three ways. First, we study numerically the resonant characteristics in the transmission probabilities as functions of both the electron's energy and the frequency of the external field. We find that new low-frequency resonant peaks appear in the frequency dependence of the transmission probabilities and discuss the origin and possible experimental observation of these peaks. Second, we develop an analytic perturbation theory (valid for small values of the parameter lambda = V-mod/h Omega) describing the processes of absorption and emission of single quanta of the modulation field and show that this perturbative treatment agrees well with the results of numerical calculations in the appropriate regions, up to and including the regime in which the one-quantum processes saturate. Third, for localized (Gaussian) incident wave packets, we show numerically that temporal modulations of the potential well in the DBRTS can induce spatial modulations in the transmitted and reflected wave packets. We develop a simple qualitative picture that explains our results. Finally, we estimate characteristic values of the parameters relevant for possible observation of these effects in laboratory experiments.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vas'kovskii V. O., Patrin G. S., Velikanov D. A., Svalov A. V., Shchegoleva N. N.
Заглавие : Spontaneous magnetization and characteristics of temperature-induced magnetization of planar Co/Si nanostructures
Место публикации : Low Temp. Phys. - 2007. - Vol. 33, Is. 4. - P.324-328. - ISSN 1063-777X, DOI 10.1063/1.2720079; \b Физика низких температур
Примечания : Cited References: 9
Предметные рубрики: MULTILAYERS
FILMS
Аннотация: The magnetic properties of planar Co/Si nanostructures with different nominal thicknesses of the magnetic (2-42 nm) and nonmagnetic (0.3-10 nm) constituent layers are studied in the temperature range 4.2-300 K. It is established that in the presence of Si layers the spontaneous magnetization of Co decreases and its temperature dependence changes, and magnetic hysteresis is modified. The interlayer influence is interpreted as being due to the diffusion of Si into the Co layers, which results in the formation of magnetically disordered boundary interfaces with low average magnetization. The depth of the interfaces depends on the nominal thickness of the Si layers and is estimated to reach 1.6 nm. A qualitative explanation of the characteristics of the magnetization of the experimental objects under the influence of a magnetic field and temperature is given in a model where the interfaces have a granular microstructure. Electron-microscope observations confirm some assumptions of the proposed model. (C) 2007 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chernozatonskii L. A., Sorokin P. B., Bruning J. W.
Заглавие : Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms
Место публикации : Appl. Phys. Lett. - 2007. - Vol. 91, Is. 18. - Ст.183103. - ISSN 0003-6951, DOI 10.1063/1.2800889
Примечания : Cited References: 24
Предметные рубрики: CARBON
GAS
Ключевые слова (''Своб.индексиров.''): electronic properties--energy gap--graphite--hydrogen--semiconductor materials--superlattices--electronic spectra--graphene sheets--quasi-two-dimensional heterostructures--semiconducting nanostructures--nanostructured materials
Аннотация: It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the formation of 2HG-SL changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with n, but with nonzero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of zigzag strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. (C) 2007 American Institute of Physics.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Bartolome J., Sese J., Ovchinnikov S. G., Komogortsev S. V., Parshin A. S., Bondarenko G. V.
Заглавие : Size effects and magnetization of (Fe/Si)(n) multilayer film nanostructures
Разночтения заглавия :авие SCOPUS: Size effects and magnetization of (Fe/Si) n multilayer film nanostructures
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2007. - Vol. 49, Is. 8. - P1470-1475. - ISSN 1063-7834, DOI 10.1134/S1063783407080124
Примечания : Cited References: 36
Предметные рубрики: GIANT MAGNETORESISTANCE
FE/SI MULTILAYERS
ULTRAHIGH-VACUUM
SUPERLATTICES
EXCHANGE
RESONANCE
LAYER
Аннотация: The temperature dependence of the magnetization of (Fe/Si) (n) multilayer films with nanometer layers is investigated. The films are prepared through thermal evaporation under ultrahigh vacuum onto Si(100) and Si(111) single-crystal substrates. It is revealed that the thickness of individual iron layers in (Fe/Si) (n) multilayer films affects the magnetization and its temperature dependence. The inference is made that this dependence is associated with the formation of a chemical interface at the Fe-Si boundaries. The characteristics of the chemical interface in the (Fe/Si) (n) films are estimated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bulina N. V., Lopatin V. A., Vnukova N. G., Osipova I. V., Churilov G. N., Krtschmer W.
Заглавие : Arc synthesis of silicon-doped heterofullerenes in plasma at atmospheric pressure
Место публикации : Fullerenes Nanotubes and Carbon Nanostructures: Marcel Dekker Inc., 2007. - Т. 15, № 5. - С. 395-400. - ISSN 1536-383X, DOI 10.1080/15363830701512229. - ISSN 1536-4046(eissn)
ГРНТИ : 31
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Gavrilyuk A. P., Karpov S. V.
Заглавие : The model of resonant domain of metal nanoparticle aggregates in pulsed laser fields
Коллективы : ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures
Место публикации : Proceedings of SPIE - The International Society for Optical Engineering/ sponsors: SPIE Russia Chapter, National Academy of Sciences, Belarus, Russian Academy of Sciences, Belarus Foundation for Basic Research, Russian Physical Society ; ICONO 2007: Novel Photonics Materials; Optics and Optical Diagnostics of Nanostructures (2007 ; 28.05 - 01.06 ; Минск): S P I E - International Society for Optical Engineering, 2007. - 6728. - С. 67281T. - ISBN 0819468851, DOI 10.1117/12.752386 (Шифр 15048789)
ГРНТИ : 31.15
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Churilov G. N.
Заглавие : Synthesis of fullerenes and other nanomaterials in arc discharge
Место публикации : Fullerenes Nanotubes and Carbon Nanostructures: Marcel Dekker Inc., 2008. - Т. 16, № 5-6. - С. 395-403. - ISSN 1536-383X, DOI 10.1080/15363830802281641. - ISSN 1536-4046(eissn)
ГРНТИ : 31
РИНЦ
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Fedorov D. G., Sorokin P. B., Chernozatonskii L. A., Ovchinnikov S. G.
Заглавие : Quantum dots embedded into silicon nanowires effectively partition electron confinement
Коллективы :
Место публикации : J. Appl. Phys.: AMER INST PHYSICS, 2008. - Vol. 104, Is. 5. - Ст.54305. - ISSN 0021-8979, DOI 10.1063/1.2973464
Примечания : Cited References: 22. - This work was, in part, partially supported by a Core Research for Evolutional Science and Technology (CREST) grant in the area of high performance computing for multi-scale and multiphysics phenomena from the Japan Science and Technology Agency (JST) as well as by the Russian Fund of Basic Researches (Grant No. 05-02-17443) (L.A.C.). One of the authors (P.V.A.) acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute. The geometry of all presented structures was visualized by ChemCraft software. SUP23/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations.
Предметные рубрики: OPTICAL-PROPERTIES
POROUS SILICON
WIRES
PREDICTION
GROWTH
Ключевые слова (''Своб.индексиров.''): electric currents--electric wire--electronic states--electronic structure--nanostructured materials--nanostructures--nanowires--nonmetals--optical waveguides--plasma confinement--quantum confinement--quantum electronics--semiconducting silicon compounds--silicon--electronic state--band gaps--electron confinements--electronic-structure calculations--embedded structures--quantum confinement effect--quantum dots--semi-empirical methods--silicon nanowires--silicon quantum dots--semiconductor quantum dots
Аннотация: Motivated by the experimental discovery of branched silicon nanowires, we performed theoretical electronic structure calculations of icosahedral silicon quantum dots embedded into pentagonal silicon nanowires. Using the semiempirical method, we studied the quantum confinement effect in the fully optimized embedded structures. It was found that (a) the band gaps of the embedded structures are closely related to the linear sizes of the longest constituting part rather than to the total linear dimension and (b) the discovered atypical quantum confinement with a plateau and a maximum can be attributed to the substantial interactions of near Fermi level electronic states of the quantum dots and nanowire segments. (c) 2008 American Institute of Physics.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sorokin P. B., Ovchinnikov S. G., Avramov P. V., Chernozatonskii L.A., Fedorov D.G.
Заглавие : Atypical quantum confinement effect in silicon nanowires
Место публикации : J. Phys. Chem. A. - WASHINGTON: AMER CHEMICAL SOC, 2008. - Vol. 112, Is. 40. - С. 9955-9964. - OCT 9. - ISSN 1089-5639, DOI 10.1021/jp805069b
Примечания : Cited Reference Count: 25. - Гранты: This work was in part partially supported by a CREST (Core Research for Evolutional Science and Technology) grant in the Area of High Performance Computing for Multiscale and Multiphysics Phenomena from the Japan Science and Technology Agency (JST) as well as by Russian Fund of Basic Researches (grant 08-02-01096) (L.A.C.). P.V.A. acknowledges the encouragement of Dr. Keiji Morokuma, Research Leader at Fukui Institute for Fundamental Chemistry. The geometry of all presented structures was visualized by ChemCraft software.SUP25/SUP L.A.C. acknowledges I. V. Stankevich for help and fruitful discussions. P.B.S. is grateful to the Joint Supercomputer Center of the Russian Academy of Sciences for access to a cluster computer for quantum-chemical calculations.Финансирующая организация: Japan Science and Technology Agency (JST); Russian Fund of Basic Researches [08-02-01096]
Предметные рубрики: ELECTRONIC-STRUCTURE
OPTICAL-PROPERTIES
SI
DENSITY
WIRES
EXCHANGE
ATOMS
DOTS
Ключевые слова (''Своб.индексиров.''): electric wire--energy gap--gallium alloys--mathematical models--nanostructured materials--nanostructures--nanowires--quantum confinement--quantum electronics--semiconductor quantum dots--silicon--ami methods--band gaps--blue shifts--dinger equations--linear junctions--monotonic decreases--quantum confinement effects--quantum dots--semiempirical--silicon nanowires--system sizes--theoretical models--nanocrystalline silicon--nanowire--quantum dot--silicon--article--chemistry--electron--quantum theory--electrons--nanowires--quantum dots--quantum theory--silicon
Аннотация: The quantum confinement effect (QCE) of linear junctions of silicon icosahedral quantum dots (IQD) and pentagonal nanowires (PNW) was studied using DFT and semiempirical AM1 methods. The formation of complex IQD/PNW structures leads to the localization of the HOMO and LUMO on different parts of the system and to a pronounced blue shift of the band gap; the typical QCE with a monotonic decrease of the band gap upon the system size breaks down. A simple one-electron one-dimensional Schrodinger equation model is proposed for the description and explanation of the unconventional quantum confinement behavior of silicon IQD/PNW systems. On the basis of the theoretical models, the experimentally discovered deviations from the typical QCE for nanocrystalline silicon are explained.
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