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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kosyrev N. N., Varnakov S. N., Tarasov I. A., Lyashenko S. A., Ovchinnikov S. G.
Заглавие : Characterization of manganese and iron silicides by in situ spectral generalized magneto-optical ellipsometry
Коллективы : Workshop Ellipsometry (7; 2012 ; март ; 5-7; Leipzig, Germany)
Место публикации : 7th Workshop on Ellipsometry: abstract book. - 2012. - P. - 82
Аннотация: Dilute magnetic semiconductors (DMS) combine the electronic transport properties of semiconductors and memory characteristics of magnetic materials. The complementary properties of semiconductor and ferromagnetic material can manipulate both degrees of freedoms of electrons0 spins and charges for spintronic devices. In recent years, group IV(Ge,Si)-based DMSs attract considerable experimental effort due to the compatibility with mainstream silicon technology. In ourworkwe present the investigation of structural,magnetic and optical properties ofmanganese and iron silicides thin films on Si (100) substrate by in situ spectral generalizedmagneto-optical ellipsometry. Themeasurementswere performed by spectral and laser ellipsometers (“Spectroscan“ and “LEF-71“ respectively by Institute Semiconductors Physics SB RAS), optimized tomeasure not only traditional ellipsometric parameters, but also magneto-optical response of the sample. The magnetoellipsometers were integrated into the ultrahigh vacuum chambers of molecular beam epitaxy setup, which allowed to control the optical and magnetic properties of thin films directly in the growth process. As a result of the magneto-optical response analysis, it was found that iron and manganese silicides in magnetic phase were formed on the Si surface and by analysis of the ellipsometric parameters dependence on evaporation time the silicide nanoclusters were identified and their structural properties were found. The work was supported by project 4.1 of the OFN RAS, project 27.10 of the Presidium RAS, integration project22 of SB RAS and FEB RAS, and also the FCP NK-744P/6 .
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lyashchenko S. A., Varnakov S. N., Ovchinnikov S. G., Berezitskaya E. P., Alexandrova G. A., Vaituzin O. P.
Заглавие : Determination of structural parameters of the Fe-Si-system by spectral ellipsometry method
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : Asian School-Conference on Physics and Technology of Nanostructured Materials (1 ; 2011 ; Aug. ; 21-28 ; Vladivostok)Азиатская школа-конференция по физике и технологии наноструктурированных материалов (1 ; 2011 ; авг. ; 21-28 ; Владивосток). Physics Procedia. - 2012. - Vol. 23. - P.49-52. - ISSN 1875-3884, DOI 10.1016/j-phpro.2011.01.013
Ключевые слова (''Своб.индексиров.''): spectral ellipsometry--silicides--atomic force microscopic
Аннотация: Limitation of the thin homogeneous layers with sharp interfaces model for the structure Si(100)/FeSi2(grain) in solution the inverse problem of ellipsometry in the visible spectral range is shown. A new model of random distribution of thin disks for describing the real structure of the sample is designed. The results of the model optimization are confirmed by AFM.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Badía-Romano L., Rubin J., Bartolomé F., Bartolome J., Ovchinnikov S. G., Varnakov S.N., Magen C., Rubio-Zuazo J., Castro G. R.
Заглавие : Morphological and compositional study at the Si/Fe interface of (Fe/Si) multilayer
Место публикации : SPIN. - 2014. - Vol. 4, № 1. - P.1440002. - DOI 10.1142/S2010324714400025
Ключевые слова (''Своб.индексиров.''): fe-si interlayer--magnetic nanostructures--fe silicides--reflectivity--conversion electron möossbauer spectroscopy
Аннотация: Diffusion and reaction of elements at the interfaces of nanostructured systems play an important role in controlling their physical and chemical properties for subsequent applications. (Fe/Si) nanolayers were prepared by thermal evaporation under ultrahigh vacuum onto a Si(100) substrate. A morphological characterization of these films was performed by combination of scanning transmission electron microscopy (STEM) and X-ray reflectivity (XRR). The compositional depth profile of the (Fe/Si) structures was obtained by angle resolved X-ray photoelectron spectroscopy (ARXPS) and hard X-ray photoelectron spectroscopy (HAXPES). Moreover, determination of the stable phases formed at the Si on Fe interfaces was performed using conversion electron Mössbauer spectroscopy. The Si/Fe interface thickness and roughness were determined to be 1.4 nm and 0.6 nm, respectively. A large fraction of the interface is composed of c-Fe1-xSi paramagnetic phase, though a minoritary ferromagnetic Fe rich silicide phase is also present.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Gomoyunova M. V., Grebenyuk G. S., Zabluda V. N., Ovchinnikov S. G., Pronin I. I.
Заглавие : Initial growth stages of manganese films on the Si(100)2 x 1 surface
Коллективы : Russian-German Laboratory at HZB BESSY; Ministry of Education and Science of the Russian Federation [14V37.21.1276]; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 56, Is. 2. - P.380-384. - ISSN 1063-7834, DOI 10.1134/S1063783414020310. - ISSN 1090-6460
Примечания : Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Ministry of Education and Science of the Russian Federation (agreement 14V37.21.1276), and the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265).
Предметные рубрики: PHOTOELECTRON-SPECTROSCOPY
ROOM-TEMPERATURE
SILICIDES
SILICON
Аннотация: Initial growth stages of manganese films on the Si(100)2 × 1 surface at room temperature have been investigated using high-energy-resolution photoelectron spectroscopy, and the dynamics of the variation in their phase composition and electronic structure with the coverage growth has been revealed. It has been shown that the interfacial manganese silicide and the film of the solid solution of silicon in manganese are sequentially formed under these conditions on the silicon surface. The growth of the metal manganese film starts after the deposition of ~0.9 nm Mn. Segregation of silicon on the film surface is observed in the range of coverages up to 1.6 nm Mn.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Varnakov S. N., Gomoyunova M. V., Grebenyuk G.S ., Zabluda V. N., Ovchinnikov S. G., Pronin I. I.
Заглавие : Solid-phase synthesis of manganese silicides on the Si(100)2 x 1 surface
Коллективы : Russian-German Laboratory at HZB BESSY; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]; Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools [NSh-1044.2012.2]; Siberian Branch of the Russian Academy of Sciences [85]; Ural Branch of the Russian Academy of Sciences [85]
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 56, Is. 4. - P.812-815. - ISSN 1063-7834, DOI 10.1134/S1063783414040337. - ISSN 1090-6460
Примечания : Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265), the Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools (grant no. NSh-1044.2012.2), and the Integration Project No. 85 of the Siberian and Ural Branches of the Russian Academy of Sciences.
Предметные рубрики: PHOTOELECTRON-SPECTROSCOPY
GROWTH
FILMS
Аннотация: The solid-phase synthesis of manganese silicides on the Si(100)2 × 1 surface coated at room temperature by a 2-nm-thick manganese film has been investigated using high-energy-resolution photoelectron spectroscopy with synchrotron radiation. The dynamics of variation of the phase composition and electronic structure of the near-surface region with increasing sample annealing temperature to 600°C, has been revealed. It has been shown that, under these conditions, a solid solution of silicon in manganese, metallic manganese monosilicide MnSi, and semiconductor silicide MnSi1.7 are successively formed on the silicon surface. The films of both silicides are not continuous, with the fraction of the substrate surface occupied by them decreasing with increasing annealing temperature. The binding energies of the Si 2p and Mn 3p electrons in the compounds synthesized have been determined.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Badía-Romano L., Rubin J., Bartolomé F., Magen C., Bartolome J., Varnakov S. N., Ovchinnikov S. G., Rubio-Zuazo J., Castro G.R.
Заглавие : Morphology of the asymmetric iron-silicon interfaces
Место публикации : J. Alloys Compd.: Elsevier Science, 2015. - Vol. 627. - P.136-145. - ISSN 0925, DOI 10.1016/j.jallcom.2014.12.019. - ISSN 18734669(eISSN)
Примечания : Cited References:69. - The financial support of the Spanish MINECO MAT2011-23791, the Presidentof Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, the Ministryof Education and Science of Russian Federation (14.604.21.0002 and02G25.31.0043), Aragonese DGA-IMANA E34 (cofunded by Fondo SocialEuropeo) and that received from the European Union FEDER funds isacknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant.
Предметные рубрики: RAY PHOTOELECTRON-SPECTROSCOPY
ELECTRON MOSSBAUER-SPECTROSCOPY
Ключевые слова (''Своб.индексиров.''): fe/si nanolayers--interfaces--fe silicides--compositional depth--haxpes--cems
Аннотация: A systematic study of the iron–silicon interfaces formed upon preparation of (Fe/Si) multilayers has been performed by combination of modern and powerful techniques. Samples were prepared by thermal evaporation under ultrahigh vacuum onto a Si(1 0 0) substrate. The morphology of these films and their interfaces was studied by a combination of scanning transmission electron microscopy, X-ray reflectivity, angle resolved X-ray photoelectron spectroscopy and hard X-ray photoelectron spectroscopy. The Si-on-Fe interface thickness and roughness were determined to be 1.4(1) nm and 0.6(1) nm, respectively. Moreover, determination of the stable phases formed at both Fe-on-Si and Si-on-Fe interfaces was performed using conversion electron Mössbauer spectroscopy on multilayers with well separated Si-on-Fe and Fe-on-Si interfaces. It is shown that while a fraction of Fe remains as α-Fe, the rest has reacted with Si, forming the paramagnetic c-Fe1−xSi phase and a ferromagnetic Fe rich silicide (DO3 type phase). We conclude that the paramagnetic c-Fe1−xSi silicide sublayer is identical in both Si-on-Fe and Fe-on-Si interfaces, whereas an asymmetry is revealed in the composition of the ferromagnetic silicide sublayer.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lyashchenko S. A., Popov Z. I., Varnakov S. N., Popov E. A., Molokeev M. S., Yakovlev I. A., Kuzubov A. A., Ovchinnikov S. G., Shamirzaev T. S., Latyshev A. V., Saranin A. A.
Заглавие : Analysis of optical and magnetooptical spectra of Fe5Si3 and Fe3Si magnetic silicides using spectral magnetoellipsometry
Коллективы : Ministry of Education and Science of the Russian Federation [16.663.2014K, 14.604.21.0002 (RFMEFI60414X0002), 02.G25.31.0043], Russian Foundation for Basic Research [13-02-01265, 14-02-31309]
Место публикации : J. Exp. Theor. Phys.: MAIK Nauka-Interperiodica / Springer, 2015. - Vol. 120, Is. 5. - P.886-893. - ISSN 1063, DOI 10.1134/S1063776115050155. - ISSN 10906509(eISSN)
Примечания : Cited References:31. - This study was financially supported by the Ministry of Education and Science of the Russian Federation (state assignment no. 16.663.2014K, agreement no. 14.604.21.0002 (RFMEFI60414X0002), and contract no. 02.G25.31.0043), the Program is Support of Leading Scientific Schools (project no. NSh-2886.2014.2), and the Russian Foundation for Basic Research (project nos. 13-02-01265 and 14-02-31309).
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
FILMS
ELLIPSOMETRY
Аннотация: The optical, magnetooptical, and magnetic properties of polycrystalline (Fe5Si3/SiO2/Si(100)) and epitaxial Fe3Si/Si(111) films are investigated by spectral magnetoellipsometry. The dispersion of the complex refractive index of Fe5Si3 is measured using multiangle spectral ellipsometry in the range of 250–1000 nm. The dispersion of complex Voigt magnetooptical parameters Q is determined for Fe5Si3 and Fe3Si in the range of 1.6–4.9 eV. The spectral dependence of magnetic circular dichroism for both silicides has revealed a series of resonance peaks. The energies of the detected peaks correspond to interband electron transitions for spin-polarized densities of electron states (DOS) calculated from first principles for bulk Fe5Si3 and Fe3Si crystals.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Sandalov I. S., Zamkova N. G., Zhandun V. S., Ovchinnikov S. G.
Заглавие : Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides
Коллективы : International seminar on ferroelastic physics, Международный семинар по физике сегнетоэластиков, Российская академия наук, Воронежский государственный технический университет
Место публикации : The Eighth Int. Sem. on Ferroelastic Phys.: book of abstracts. - 2015. - P.362

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Игуменов А. Ю., Паршин, Анатолий Сергеевич, Михлин, Юрий Леонидович, Пчеляков О. П., Жигалов, Виктор Степанович, Кущенков С. А.
Заглавие : Исследование силицида FeSi методами электронной спектроскопии
Коллективы : "Решетневские чтения", международная научно-практическая конференция
Место публикации : Решетневские чтения: материалы XIX Междунар. науч. конф. : в 2-х ч. - Красноярск: Сибирский государственный аэрокосмический университет им. акад. М. Ф. Решетнева, 2015. - Ч. 1. - С. 525-527. - ISSN 1990-7702
Примечания : Библиогр.: 7
Ключевые слова (''Своб.индексиров.''): силициды железа--спектроскопия сечения неупругого рассеяния электронов--спектроскопия характеристических потерь энергии электронов--iron silicides--inelastic electron scattering cross-section--electron energy loss spectroscopy
Аннотация: Для создания наногетероструктур на основе железа и кремния необходим строгий контроль элементного состава и фазообразования, в том числе силицидообразования. Моносилицид железа – перспективный материал для создания источников и детекторов света в ближней инфракрасной области, которые могут быть использованы в ракетно-космической отрасли. В данной работе проведено исследование силицида FeSi методами рентгеновской фотоэлектронной спектроскопии, спектроскопии характеристических потерь энергии отраженных электронов и сечения неупругого рассеяния электронов. Проведено исследование тонкой структуры спектров сечения неупругого рассеяния электронов посредством аппроксимации этих спектров Лоренцевоподобными пиками Тоугаарда.The creation of iron-silicon based nanoheterostructures requires precise control of the elemental composition and phase formation, including silicide formation. Iron monosilicide is a promising material to create light sources or detectors in the near infrared region, which can be used in the space industry. In this work, the silicide FeSi investigation with X-ray photoelectron spectroscopy, electron energy loss spectroscopy and inelastic electron scattering cross-section is carried out. The inelastic electron scattering cross-section spectra fine structure investigation approximating of these spectra with the Lorentzian-type Tougaard peaks is performed.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Sandalov I. S., Zamkova N. G., Zhandun V. S., Ovchinnikov S. G.
Заглавие : Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides
Коллективы : European Crystallographic Meeting
Место публикации : Acta Crystallogr. A: Wiley-Blackwell, 2015. - Vol. 71, Supplement. - Ст.s362. - ISSN 0108-7673, DOI 10.1107/S2053273315094590
Ключевые слова (''Своб.индексиров.''): strongly correlated electrons--delocalization
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