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Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure / N. V. Volkov [et al.] // J. Phys. D. - 2009. - Vol. 42, Is. 6. - Ст. 65005, DOI 10.1088/0022-3727/42/6/065005. - Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS). . - ISSN 0022-3727

РУБ Physics, Applied

Кл.слова (ненормированные):
Colossal magnetoresistance -- Electric resistance -- Electronic structure -- Magnetic field effects -- Magnetoelectronics -- Manganese -- Manganites -- Oxide minerals -- Schottky barrier diodes -- Semiconductor junctions -- Silicides -- Tunnel junctions -- Tunnels -- Bottom layers -- Channel switching -- Conducting channels -- Conducting layers -- Current-driven -- Current-in-plane geometries -- Depletion layers -- Ferromagnetic state -- Layered structures -- Low-resistance contacts -- Magnetic tunnel junctions -- Magneto-transport properties -- Manganese silicides -- Manganite films -- New mechanisms -- Positive magnetoresistances -- Positive MR -- Potential barriers -- Spin-polarized -- Tunnel structures -- Voltage-current characteristics -- Current voltage characteristics
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.

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Держатели документа:
[Volkov, N. V.
Eremin, E. V.
Tsikalov, V. S.
Patrin, G. S.
Kim, P. D.] SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Patrin, G. S.] Siberian Fed Univ, Dept Phys, Krasnoyarsk 660041, Russia
[Seong-Cho, Yu
Kim, Dong-Hyun] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea
[Chau, Nguyen] Natl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam
ИФ СО РАН
Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036, Russian Federation
Department of Physics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Department of Physics, Chungbuk National University, Cheongju 361-763, South Korea
Center for Materials Science, National University of Hanoi, 334 Nguyen Trai, Hanoi, Viet Nam

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tsikalov, V. S.; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. H.; Chau, N.; RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]
}
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Current channel switching in the manganite-based multilayer structure / N. V. Volkov [et al.] // J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5, DOI 10.1088/1742-6596/200/5/052031 . - ISSN 1742-6588
Кл.слова (ненормированные):
Channel switching -- Current in planes -- Magnetic tunnel junction -- Magnetoresistive -- Manganese silicide -- Multilayer structures -- Optical radiations -- Potential barriers -- Lanthanum -- Magnetic fields -- Manganese -- Silicides -- Transport properties -- Tunnel junctions -- Manganese oxide
Аннотация: The transport properties of the structure La0.7Sr 0.3MnO3/depleted manganite layer/MnSi have been studied. The depleted manganite layer serves as a potential barrier between the ferromagnetic conducting La0.7Sr0.3MnO3 and MnSi layers by forming a magnetic tunnel junction. The study in the CIP (current-in-plane) geometry has revealed the effect of current channel switching between the manganite layer and the manganese silicide layer with higher conductivity. The effect is controlled by bias current, magnetic field, and optical radiation. Such switching is responsible for the features of the transport properties and the magnetoresistive and photovoltaic effects in the structure. © 2010 IOP Publishing Ltd.

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Держатели документа:
Kirensky Institute of Physics SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Institute of Engineering Physics and Radio Electronics, Krasnoyarsk, 660041, Russian Federation
Chungbuk National University, Department of Physics, Cheongju, 361-763, South Korea

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Пётр Дементьевич; Seong-Cho, Y.; Kim, D. -H.; Chau, N.
}
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Characterization and magnetic properties of the iron silicides / S. G. Ovchinnikov, S. N. Varnakov, A. S. Fedorov [et al.] // Proceedings Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT 2011) / Asian School-Conference on Physics and Technology of Nanostructured Materials (2011 ; Aug. ; 22-29 ; Vladivostok, Russia), Азиатская школа-конференция по физике и технологии наноструктурированных материалов (1 ; 2011 ; авг. ; 21-28 ; Владивосток). - 2011

Доп.точки доступа:
Ovchinnikov, S.G.; Varnakov, S.N.; Fedorov, A.S.; Lyaschenko, S.A.; Yakovlev, I.A.; Asian School-Conference on Physics and Technology of Nanostructured Materials(2011 ; Aug. ; 22-29 ; Vladivostok, Russia); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(1 ; 2011 ; авг. ; 21-28 ; Владивосток)
}
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CEMS analysis of phase formation in nanostructured films (Fe/Si) 3 / S. N. Varnakov [et al.] // Solid State Phenomena. - 2011. - Vol. 168-169. - P. 277-280, DOI 10.4028/www.scientific.net/SSP.168-169.277 . - ISSN 1662-9779
Кл.слова (ненормированные):
interfaces metal/semiconductor -- magnetic silicides -- molecular beam epitaxy technology -- semiconductor and magnetic geterostructures
Аннотация: Determination of stable phases formed at the Fe/Si interface in (Fe/Si)n structure, grown by thermal evaporation in an ultrahigh vacuum system was performed using conversion electron Mossbauer spectroscopy (CEMS).

РИНЦ
Держатели документа:
Instituto de Ciencia de Materiales de Aragon,Departamento de Ciencia de Materiales e Ingenieria Metalurgica,CSIC-Universidad de Zaragoza
Instituto de Ciencia de Materiales de Aragon,Departamento de Fisica de la Materia Condensada,CSIC-Universidad de Zaragoza
Kirensky Institute of Physics,Siberian Division,Russian Academy of Sciences
Siberian Aerospace University

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Bartolomé, J.; Rubin, J.; Badia, L.; Bondarenko, G. V.; Бондаренко, Геннадий Васильевич; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg)
}
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Characterization of manganese and iron silicides by in situ spectral generalized magneto-optical ellipsometry / N. N. Kosyrev [et al.] // 7th Workshop on Ellipsometry : abstract book. - 2012. - P. . - 82
Аннотация: Dilute magnetic semiconductors (DMS) combine the electronic transport properties of semiconductors and memory characteristics of magnetic materials. The complementary properties of semiconductor and ferromagnetic material can manipulate both degrees of freedoms of electrons0 spins and charges for spintronic devices. In recent years, group IV(Ge,Si)-based DMSs attract considerable experimental effort due to the compatibility with mainstream silicon technology. In ourworkwe present the investigation of structural,magnetic and optical properties ofmanganese and iron silicides thin films on Si (100) substrate by in situ spectral generalizedmagneto-optical ellipsometry. Themeasurementswere performed by spectral and laser ellipsometers (“Spectroscan“ and “LEF-71“ respectively by Institute Semiconductors Physics SB RAS), optimized tomeasure not only traditional ellipsometric parameters, but also magneto-optical response of the sample. The magnetoellipsometers were integrated into the ultrahigh vacuum chambers of molecular beam epitaxy setup, which allowed to control the optical and magnetic properties of thin films directly in the growth process. As a result of the magneto-optical response analysis, it was found that iron and manganese silicides in magnetic phase were formed on the Si surface and by analysis of the ellipsometric parameters dependence on evaporation time the silicide nanoclusters were identified and their structural properties were found. The work was supported by project 4.1 of the OFN RAS, project 27.10 of the Presidium RAS, integration project22 of SB RAS and FEB RAS, and also the FCP NK-744P/6 .

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Доп.точки доступа:
Kosyrev, N. N.; Косырев, Николай Николаевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Lyashenko, S. A.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Workshop Ellipsometry (7 ; 2012 ; март ; 5-7 ; Leipzig, Germany)
}
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Determination of structural parameters of the Fe-Si-system by spectral ellipsometry method / S. A. Lyashchenko [et al.] // Physics Procedia. - 2012. - Vol. 23. - P. 49-52, DOI 10.1016/j-phpro.2011.01.013 . - ISSN 1875-3884
Кл.слова (ненормированные):
spectral ellipsometry -- silicides -- atomic force microscopic
Аннотация: Limitation of the thin homogeneous layers with sharp interfaces model for the structure Si(100)/FeSi2(grain) in solution the inverse problem of ellipsometry in the visible spectral range is shown. A new model of random distribution of thin disks for describing the real structure of the sample is designed. The results of the model optimization are confirmed by AFM.

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Доп.точки доступа:
Lyashchenko, S. A.; Лященко, Сергей Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Berezitskaya, E. P.; Alexandrova, G. A.; Vaituzin, O. P.; Asian School-Conference on Physics and Technology of Nanostructured Materials(2011 ; Aug. ; 21-28 ; Vladivostok); Азиатская школа-конференция по физике и технологии наноструктурированных материалов(1 ; 2011 ; авг. ; 21-28 ; Владивосток)
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Morphological and compositional study at the Si/Fe interface of (Fe/Si) multilayer / L. Badia-Romano [et al.] // SPIN. - 2014. - Vol. 4, № 1. - P. 1440002DOI 10.1142/S2010324714400025
Кл.слова (ненормированные):
Fe-Si interlayer -- magnetic nanostructures -- Fe silicides -- reflectivity -- conversion electron Möossbauer spectroscopy
Аннотация: Diffusion and reaction of elements at the interfaces of nanostructured systems play an important role in controlling their physical and chemical properties for subsequent applications. (Fe/Si) nanolayers were prepared by thermal evaporation under ultrahigh vacuum onto a Si(100) substrate. A morphological characterization of these films was performed by combination of scanning transmission electron microscopy (STEM) and X-ray reflectivity (XRR). The compositional depth profile of the (Fe/Si) structures was obtained by angle resolved X-ray photoelectron spectroscopy (ARXPS) and hard X-ray photoelectron spectroscopy (HAXPES). Moreover, determination of the stable phases formed at the Si on Fe interfaces was performed using conversion electron Mössbauer spectroscopy. The Si/Fe interface thickness and roughness were determined to be 1.4 nm and 0.6 nm, respectively. A large fraction of the interface is composed of c-Fe1-xSi paramagnetic phase, though a minoritary ferromagnetic Fe rich silicide phase is also present.

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Доп.точки доступа:
Badía-Romano, L.; Rubin, J.; Bartolomé, F.; Bartolome, J.; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Varnakov, S.N.; Варнаков, Сергей Николаевич; Magen, C.; Rubio-Zuazo, J.; Castro, G. R.
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Initial growth stages of manganese films on the Si(100)2 x 1 surface / S. N. Varnakov [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 2. - P. 380-384, DOI 10.1134/S1063783414020310. - Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Ministry of Education and Science of the Russian Federation (agreement 14V37.21.1276), and the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265). . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
PHOTOELECTRON-SPECTROSCOPY
   ROOM-TEMPERATURE
   SILICIDES
   SILICON
Аннотация: Initial growth stages of manganese films on the Si(100)2 × 1 surface at room temperature have been investigated using high-energy-resolution photoelectron spectroscopy, and the dynamics of the variation in their phase composition and electronic structure with the coverage growth has been revealed. It has been shown that the interfacial manganese silicide and the film of the solid solution of silicon in manganese are sequentially formed under these conditions on the silicon surface. The growth of the metal manganese film starts after the deposition of ~0.9 nm Mn. Segregation of silicon on the film surface is observed in the range of coverages up to 1.6 nm Mn.

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Публикация на русском языке Начальные стадии роста пленок марганца на поверхности Si(100)2x1 [Текст] / С. Н. Варнаков [и др.] // Физ. тверд. тела. - 2014. - Т. 56 Вып. 2. - С. 375-379

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Gomoyunova, M. V.; Grebenyuk, G. S.; Zabluda, V. N.; Заблуда, Владимир Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Pronin, I. I.; Russian-German Laboratory at HZB BESSY; Ministry of Education and Science of the Russian Federation [14V37.21.1276]; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]
}
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Solid-phase synthesis of manganese silicides on the Si(100)2 x 1 surface / S. N. Varnakov [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 4. - P. 812-815, DOI 10.1134/S1063783414040337. - Cited References: 20. - This study was supported by the Russian-German Laboratory at HZB BESSY, the Russian Foundation for Basic Research (project nos. 13-02-00398 and 13-02-01265), the Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools (grant no. NSh-1044.2012.2), and the Integration Project No. 85 of the Siberian and Ural Branches of the Russian Academy of Sciences. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
PHOTOELECTRON-SPECTROSCOPY
GROWTH
FILMS
Аннотация: The solid-phase synthesis of manganese silicides on the Si(100)2 × 1 surface coated at room temperature by a 2-nm-thick manganese film has been investigated using high-energy-resolution photoelectron spectroscopy with synchrotron radiation. The dynamics of variation of the phase composition and electronic structure of the near-surface region with increasing sample annealing temperature to 600°C, has been revealed. It has been shown that, under these conditions, a solid solution of silicon in manganese, metallic manganese monosilicide MnSi, and semiconductor silicide MnSi1.7 are successively formed on the silicon surface. The films of both silicides are not continuous, with the fraction of the substrate surface occupied by them decreasing with increasing annealing temperature. The binding energies of the Si 2p and Mn 3p electrons in the compounds synthesized have been determined.

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Публикация на русском языке Твердофазный синтез силицидов марганца на поверхности Si(100)2x1 [Текст] / С. Н. Варнаков [и др.] // Физ. тверд. тела. - 2014. - Т. 56 Вып. 4. - С. 779-782

Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Gomoyunova, M. V.; Grebenyuk, G.S .; Zabluda, V. N.; Заблуда, Владимир Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Pronin, I. I.; Russian-German Laboratory at HZB BESSY; Russian Foundation for Basic Research [13-02-00398, 13-02-01265]; Council on Grants from the President of the Russian Federation for Support of the Leading Scientific Schools [NSh-1044.2012.2]; Siberian Branch of the Russian Academy of Sciences [85]; Ural Branch of the Russian Academy of Sciences [85]
}
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10.

    Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides / I. S. Sandalov [et al.] // Acta Crystallogr. A. - 2015. - Vol. 71, Supplement. - Ст. s362, DOI 10.1107/S2053273315094590 . - ISSN 0108-7673
   Перевод заглавия: Квазичастичная зонная структура, спектральные веса и степень локализации d-электронов в силицидах железа
Кл.слова (ненормированные):
strongly correlated electrons -- delocalization

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Доп.точки доступа:
Sandalov, I. S.; Сандалов, Игорь Семёнович; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; European Crystallographic Meeting(29 ; 2015 ; Aug. ; 23-28 ; Rovinj, Croatia)
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11.

Analysis of optical and magnetooptical spectra of Fe5Si3 and Fe3Si magnetic silicides using spectral magnetoellipsometry / S. A. Lyashchenko [et al.] // J. Exp. Theor. Phys. - 2015. - Vol. 120, Is. 5. - P. 886-893, DOI 10.1134/S1063776115050155. - Cited References:31. - This study was financially supported by the Ministry of Education and Science of the Russian Federation (state assignment no. 16.663.2014K, agreement no. 14.604.21.0002 (RFMEFI60414X0002), and contract no. 02.G25.31.0043), the Program is Support of Leading Scientific Schools (project no. NSh-2886.2014.2), and the Russian Foundation for Basic Research (project nos. 13-02-01265 and 14-02-31309). . - ISSN 1063. - ISSN 1090-6509. -

РУБ Physics, Multidisciplinary
Рубрики:
INITIO MOLECULAR-DYNAMICS
   AUGMENTED-WAVE METHOD
   FILMS
   ELLIPSOMETRY
Аннотация: The optical, magnetooptical, and magnetic properties of polycrystalline (Fe5Si3/SiO2/Si(100)) and epitaxial Fe3Si/Si(111) films are investigated by spectral magnetoellipsometry. The dispersion of the complex refractive index of Fe5Si3 is measured using multiangle spectral ellipsometry in the range of 250–1000 nm. The dispersion of complex Voigt magnetooptical parameters Q is determined for Fe5Si3 and Fe3Si in the range of 1.6–4.9 eV. The spectral dependence of magnetic circular dichroism for both silicides has revealed a series of resonance peaks. The energies of the detected peaks correspond to interband electron transitions for spin-polarized densities of electron states (DOS) calculated from first principles for bulk Fe5Si3 and Fe3Si crystals.

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Публикация на русском языке Исследование оптических и магнитооптических спектров магнитных силицидов Fe5Si3 и Fe3Si методом спектральной магнитоэллипсометрии [Текст] / С. А. Лященко [и др.] // Журн. эксперим. и теор. физ. : Наука, 2015. - Т. 147 Вып. 5. - С. 1023–1031

Держатели документа:
Reshetnikov Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia.
Russian Acad Sci, Inst Automat & Control Proc, Far East Branch, Vladivostok 690041, Russia.
Far Eastern State Transport Univ, Khabarovsk 680021, Russia.

Доп.точки доступа:
Lyashchenko, S. A.; Лященко, Сергей Александрович; Popov, Z. I.; Попов, Захар Иванович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Popov, E. A.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Kuzubov, A. A.; Кузубов, Александр Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Shamirzaev, T. S.; Latyshev, A. V.; Saranin, A. A.; Ministry of Education and Science of the Russian Federation [16.663.2014K, 14.604.21.0002 (RFMEFI60414X0002), 02.G25.31.0043]; Russian Foundation for Basic Research [13-02-01265, 14-02-31309]
}
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12.

Quasiparticle band structure, spectral weights and degree of d-electron localization in iron silicides / I. S. Sandalov [et al.] // The Eighth Int. Sem. on Ferroelastic Phys. : book of abstracts. - 2015. - P. 362

Доп.точки доступа:
Sandalov, I. S.; Сандалов, Игорь Семёнович; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International seminar on ferroelastic physics(8 ; 2015 ; sept. ; 14-16 ; Voronezh); Международный семинар по физике сегнетоэластиков(8(13) ; 2015 ; сент. ; 13-16 ; Воронеж); Российская академия наук; Воронежский государственный технический университет
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13.

    Исследование силицида FeSi методами электронной спектроскопии / А. Ю. Игуменов [и др.] // Решетневские чтения : материалы XIX Междунар. науч. конф. : в 2-х ч. - 2015. - Ч. 1. - С. 525-527. - Библиогр.: 7 . - ISSN 1990-7702
   Перевод заглавия: Silicide FeSi investigation with the electron spectroscopy methods
Кл.слова (ненормированные):
силициды железа -- спектроскопия сечения неупругого рассеяния электронов -- спектроскопия характеристических потерь энергии электронов -- iron silicides -- inelastic electron scattering cross-section -- electron energy loss spectroscopy
Аннотация: Для создания наногетероструктур на основе железа и кремния необходим строгий контроль элементного состава и фазообразования, в том числе силицидообразования. Моносилицид железа – перспективный материал для создания источников и детекторов света в ближней инфракрасной области, которые могут быть использованы в ракетно-космической отрасли. В данной работе проведено исследование силицида FeSi методами рентгеновской фотоэлектронной спектроскопии, спектроскопии характеристических потерь энергии отраженных электронов и сечения неупругого рассеяния электронов. Проведено исследование тонкой структуры спектров сечения неупругого рассеяния электронов посредством аппроксимации этих спектров Лоренцевоподобными пиками Тоугаарда.
The creation of iron-silicon based nanoheterostructures requires precise control of the elemental composition and phase formation, including silicide formation. Iron monosilicide is a promising material to create light sources or detectors in the near infrared region, which can be used in the space industry. In this work, the silicide FeSi investigation with X-ray photoelectron spectroscopy, electron energy loss spectroscopy and inelastic electron scattering cross-section is carried out. The inelastic electron scattering cross-section spectra fine structure investigation approximating of these spectra with the Lorentzian-type Tougaard peaks is performed.

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Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Игуменов, А. Ю.; Igumenov A. Y.; Паршин, Анатолий Сергеевич; Parshin A. S.; Михлин, Юрий Леонидович; Mikhlin Yu. L.; Пчеляков, О. П.; Pchelyakov O. P.; Жигалов, Виктор Степанович; Zhigalov, V. S.; Кущенков, С. А.; Kuschenkov S. A.; "Решетневские чтения", международная научно-практическая конференция(19 ; 2015 ; нояб. ; 10-14 ; Красноярск)
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14.

Morphology of the asymmetric iron-silicon interfaces / L. Badia-Romano [et al.] // J. Alloys Compd. - 2015. - Vol. 627. - P. 136-145, DOI 10.1016/j.jallcom.2014.12.019. - Cited References:69. - The financial support of the Spanish MINECO MAT2011-23791, the Presidentof Russia Grant (NSh-1044.2012.2), RFFI Grant 13-02-01265, the Ministryof Education and Science of Russian Federation (14.604.21.0002 and02G25.31.0043), Aragonese DGA-IMANA E34 (cofunded by Fondo SocialEuropeo) and that received from the European Union FEDER funds isacknowledged. L.B.R. acknowledges the Spanish MINECO FPU 2010 grant. . - ISSN 0925. - ISSN 1873-4669. -

РУБ Chemistry, Physical + Materials Science, Multidisciplinary + Metallurgy &
Рубрики:
RAY PHOTOELECTRON-SPECTROSCOPY
ELECTRON MOSSBAUER-SPECTROSCOPY
Кл.слова (ненормированные):
Fe/Si nanolayers -- Interfaces -- Fe silicides -- Compositional depth -- HAXPES -- CEMS
Аннотация: A systematic study of the iron–silicon interfaces formed upon preparation of (Fe/Si) multilayers has been performed by combination of modern and powerful techniques. Samples were prepared by thermal evaporation under ultrahigh vacuum onto a Si(1 0 0) substrate. The morphology of these films and their interfaces was studied by a combination of scanning transmission electron microscopy, X-ray reflectivity, angle resolved X-ray photoelectron spectroscopy and hard X-ray photoelectron spectroscopy. The Si-on-Fe interface thickness and roughness were determined to be 1.4(1) nm and 0.6(1) nm, respectively. Moreover, determination of the stable phases formed at both Fe-on-Si and Si-on-Fe interfaces was performed using conversion electron Mössbauer spectroscopy on multilayers with well separated Si-on-Fe and Fe-on-Si interfaces. It is shown that while a fraction of Fe remains as α-Fe, the rest has reacted with Si, forming the paramagnetic c-Fe1−xSi phase and a ferromagnetic Fe rich silicide (DO3 type phase). We conclude that the paramagnetic c-Fe1−xSi silicide sublayer is identical in both Si-on-Fe and Fe-on-Si interfaces, whereas an asymmetry is revealed in the composition of the ferromagnetic silicide sublayer.

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Держатели документа:
Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Fis Mat Condensada, E-50009 Zaragoza, Spain
Univ Zaragoza, Dept Ciencia Mat & Ingn Met, E-50018 Zaragoza, Spain
Univ Zaragoza, INA, LMA, E-50018 Zaragoza, Spain
Fdn ARAID, E-50004 Zaragoza, Spain
Russian Acad Sci, Kirensky Inst Phys, Siberian Div, Krasnoyarsk 660036, Russia
Siberian Aerosp Univ, Krasnoyarsk 660014, Russia
ESRF, SpLine Spanish CRG, F-38043 Grenoble, France
CSIC, Inst Ciencia Mat Madrid, Madrid, Spain

Доп.точки доступа:
Badía-Romano, L.; Rubin, J.; Bartolomé, F.; Magen, C.; Bartolome, J.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Rubio-Zuazo, J.; Castro, G.R.
}
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15.

Examination of structure, optical and magnetic properties of epitaxial Fe1–xSix/Si(111) alloy films / I. A. Tarasov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. O10.20. - P. 464. - References: 1. - The work was supported by State contract No. 02.G25.31.0043, State task No.16.663.2014К, the Complex program of SB RAS № II.2P, project 0358-2015-0007 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
epitaxy -- iron silicides -- optical and magnetic properties -- structure, defects

Доп.точки доступа:
Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Kuzubov, A. A.; Кузубов, Александр Александрович; Zamkova, N. G.; Замкова, Наталья Геннадьевна; Kosyrev, N. N.; Косырев, Николай Николаевич; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Shemukhin, A. A.; Чемухин А. А.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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16.

Zamkova, N. G.
The changing of magnetic and electronic structure of iron silicides Fe3Si and α-FeSi2with different substitution / N. G. Zamkova, V. S. Zhandun, I. S. Sandalov // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P3.11. - P. 193. - References: 1 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
Iron silicides -- magnetic and electronic structure -- ab initio calculation

Доп.точки доступа:
Zhandun, V. S.; Жандун, Вячеслав Сергеевич; Sandalov, I. S.; Сандалов, Игорь Семёнович; Замкова, Наталья Геннадьевна; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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17.

MBE of iron silicide heterostructures for spintronics / S. N. Varnakov [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. I4.3. - P. 213. - References: 4. - The work was supported by The Complex program of SB RAS № II.2P, project 0358-2015-0003, the Ministry of Education and Science of the RF (State task . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
molecular beam epitaxy -- iron silicides -- spintronic devices

Доп.точки доступа:
Varnakov, S. N.; Варнаков, Сергей Николаевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Lyashchenko, S. A.; Лященко, Сергей Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Molokeev, M. S.; Молокеев, Максим Сергеевич; Belyaev, B. A.; Беляев, Борис Афанасьевич; Zharkov, S. M.; Жарков, Сергей Михайлович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Bartolomé, J.; Badía-Romano, L.; Rubín, J. ; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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18.

The temperature dependences of optical and magneto-optical properties of iron silicides / S. A. Lyashchenko [et al.] // VI Euro-Asian Symposium "Trends in MAGnetism" (EASTMAG-2016) : abstracts / ed.: O. A. Maksimova, R. D. Ivantsov. - Krasnoyarsk : KIP RAS SB, 2016. - Ст. P6.11. - P. 319. - References: 3. - The work was supported by The Complex program of SB RAS № II.2P, project 0358-2015-0004 . - ISBN 978-5-904603-06-9
Кл.слова (ненормированные):
ellipsometry -- magneto-optic effects -- Fe-Si system

Доп.точки доступа:
Lyashchenko, S. A.; Лященко, Сергей Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Maximova, O. A.; Максимова, Ольга Александровна; Shevtsov, D. V.; Шевцов, Дмитрий Валентинович; Zabluda, V. N.; Заблуда, Владимир Николаевич; Popov, Z. I.; Попов, Захар Иванович; Molokeev, M. S.; Молокеев, Максим Сергеевич; Kuzubov, A. A.; Кузубов, Александр Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН

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19.

Approach to form planar structures based on epitaxial Fe1 − xSix films grown on Si(111) / A. S. Tarasov [et al.] // Thin Solid Films. - 2017. - Vol. 642. - P. 20-24, DOI 10.1016/j.tsf.2017.09.025. - Cited References: 29. - We thank V.S. Zhigalov for assistance with the electron microscopy studies. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects Nos. 16-42-243046, 16-42-242036 and 16-42-243060. The work was also supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 7559.2016.2). . - ISSN 0040-6090
Кл.слова (ненормированные):
Iron silicides -- Wet etching -- Planar structures -- MOKE microscopy
Аннотация: An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron‑silicon alloy films with different silicon content (x = 0–0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
M.V.Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russian Federation

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, I. A.; Тарасов, Иван Анатольевич; Bondarev, I. A.; Бондарев, Илья Александрович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Kosyrev, N. N.; Косырев, Николай Николаевич; Komarov, V. A.; Комаров, Василий Андреевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Solovyov, L. A.; Соловьев, Леонид Александрович; Shemukhin, A. A.; Чемухин, А. А.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Volkov, N. V.; Волков, Никита Валентинович
}
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20.

Reflection electron energy loss spectroscopy of structures based on silicon and transition metals / A. S. Parshin [et al.] // IOP Conf. Ser.: Mater. Sci. Eng. - 2017. - Vol. 255, Is. 1. - Ст. 012019, DOI 10.1088/1757-899X/255/1/012019. - Cited References: 24
Кл.слова (ненормированные):
Dissociation -- Electron emission -- Electron energy levels -- Electron scattering -- Electrons -- Energy dissipation -- Iron -- Iron compounds -- Silicides -- Silicon compounds -- Transition metals
Аннотация: The investigation of iron silicides FeSi2, FeSi and Fe5Si3 with the methods of reflection electron energy loss spectroscopy and inelastic electron scattering cross-section spectroscopy was carried out. It is shown that the shape and peak energy position of electron energy loss spectra are almost identical to silicides with different composition, while the amplitude of inelastic electron scattering cross-section spectra decreases with increasing of iron content. The decomposition of inelastic electron scattering cross-section spectra of FeSi2, FeSi and Fe5Si3 to Tougaard peaks is used for unresolved energy loss peaks analysis, determination its energies and identification bulk and surface peaks. The amplitude of fitting peak describing bulk plasmon excitation can be used for identification of the iron silicides with different composition.

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Доп.точки доступа:
Parshin, A. S.; Паршин, Анатолий Сергеевич; Igumenov, A. Y.; Mikhlin, Y. L.; Михлин, Юрий Леонидович; Pchelyakov, O. P.; Zhigalov, V. S.; Жигалов, Виктор Степанович; International Scientific Conference Reshetnev Readings(20 ; 2016 ; Nov. 9-12 ; Krasnoyarsk)
}
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