Библиотека института физики им. Л.В. Киренского СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bondarev I. A., Rautskii M. V., Volkov N. V., Lukyanenko A. V., Yakovlev I. A., Varnakov S. N., Tarasov A. S.
Заглавие : Lateral photovoltaic effect in silicon-based hybrid structures under external magnetic field
Колич.характеристики :6 с
Место публикации : Mater. Sci. Semicond. Process. - 2023. - Vol. 167. - Ст.107786. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2023.107786. - ISSN 18734081 (eISSN)
Примечания : Cited References: 32
Аннотация: Charge transport in semiconductor devices is highly sensitive to light, which opens up wide application prospects. The lateral photovoltaic effect (LPE) is widely used in position sensitive detectors due to its high sensitivity to the light spot position. We report on the features of the LPE in silicon-based metal/insulator/semiconductor structures at helium temperatures. To investigate the LPE, Fe/SiO2/p-Si and Mn/SiO2/n-Si structures have been fabricated by molecular beam epitaxy. It has been found by studying the lateral photovoltage that the SiO2/Si interface plays a significant role in transport of photogenerated carriers, mainly via the interface states, which induce electron capture/emission processes at certain temperatures. The value of the photovoltage is likely affected not only by the metallic film thickness, but also by the substrate conductivity type and Schottky barrier. The effect of the magnetic field on the LPE is driven by two mechanisms. The first one is the well-known action of the Lorentz force on photogenerated carriers and the second one is shifting of the interface state energy levels. Basically, the magnetic field suppresses the contribution of the interface states to the LPE, which suggests that the interface-induced transport can be controlled magnetically.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smirnov, Mikhail, Roginskii, Evgenii, Savin, Aleksandr, Oreshonkov A. S., Pankin, Dmitrii
Заглавие : Density-functional study of the Si/SiO2 interfaces in short-period superlattices: Vibrational states and Raman spectra
Колич.характеристики :18 с
Место публикации : Photonics. - 2023. - Vol. 10, Is. 8. - Ст.902. - ISSN 23046732 (eISSN), DOI 10.3390/photonics10080902
Примечания : Cited References: 61. - The study was supported by grants from the Russian Science Foundation (project No. 22-22-20021) and the Saint-Petersburg Science Center (project No. 32/2022), using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State UniversityThe study was performed using the resources of the Computing Center and the Center for Optical and Laser Materials Research at the Research Park of St. Petersburg State University. The authors thank Konstantin Smirnov for his valuable advice. The calculations were also performed in part using the facilities of the JSCC supercomputer center at RAS and the Konstantinov computational center at the Ioffe Institute
Аннотация: Raman spectroscopy has proven its effectiveness as a highly informative and sensitive method for the nondestructive analysis of layered nanostructures and their interfaces. However, there is a lack of information concerning the characteristic phonon modes and their activity in Si/SiO2 nanostructures. In order to overcome this problem, the phonon states and Raman spectra of several Si/SiO2 superlattices (SL) with layer thicknesses varied within 0.5–2 nm are studied using DFT-based computer modeling. Two types of structures with different interfaces between crystalline silicon and SiO2 cristobalite were studied. A relationship between the phonon states of heterosystems and the phonon modes of the initial crystals was established. Estimates of the parameters of deformation potentials are obtained, with the help of which the shifts of phonon frequencies caused by elastic strains in the materials of the SL layers are interpreted. The dependence of intense Raman lines on the SL structure has been studied. Several ways have been proposed to use this information, both for identifying the type of interface and for estimating the structural parameters. The obtained information will be useful for the spectroscopic characterization of the silicon/oxide interfaces.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vazhenina I. G., Stolyar S. V., Tyumentsev A. V., Volochaev M. N., Iskhakov R. S., Komogortsev S. V., Pyankov V. F., Nikolaeva E. D.
Заглавие : Study of magnetic iron oxide nanoparticles coated with silicon oxide by ferromagnetic method
Колич.характеристики :5 с
Коллективы : Nanophysics and Nanoelectronics, International Symposium
Место публикации : Phys. Solid State. - 2023. - Vol. 65, Is. 6. - P.884-888. - ISSN 10637834 (ISSN), DOI 10.21883/PSS.2023.06.56095.01H. - ISSN 10906460 (eISSN)
Примечания : Cited References: 20. - The study was supported by grant No. 22-14-20020 provided by the Russian Science Foundation, Krasnoyarsk Regional Science Foundation
Аннотация: agnetic nanoparticles of magnetite with a size of ~8 nm synthesized with a different type of coating were studied by ferromagnetic resonance in the temperature range from 7 to 300 K. The features of the experimental temperature dependences of the parameters of the ferromagnetic resonance curve (the magnitude of the resonant field, line width and intensity) and their approximation allowed us to estimate the values of characteristic temperatures. Firstly, the value of the Vervey temperature and the dependence of its value on the type of coating were determined. Secondly, the temperature of transition of nanoparticles to the superparamagnetic state (blocking temperature) and the temperature range within which the magnetic structure of the outer shell of the magnetic nanoparticle is in the spin glass state are established.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shadrina, Galina, Bulgakov E. N., Sadreev A. F., Pichugin K. N.
Заглавие : Exceptional points in periodic array of silicon rods
Колич.характеристики :5 с
Место публикации : Appl. Phys. Lett. - 2023. - Vol. 123, Is. 21. - Ст.211104. - ISSN 00036951 (ISSN), DOI 10.1063/5.0173550. - ISSN 10773118 (eISSN)
Примечания : Cited References: 37
Аннотация: We find numerically the complex eigenvalues in grating composed of infinitely long silicon rods of rectangular cross section and show existence of exceptional points (EPs) in parametric space of structural scales and wave vector along the rods. The EPs have sufficiently small imaginary parts due to their proximity to bound states in the continuum. This enables to trace the resonant frequencies in the transmission around the EP and, accordingly, to identify the EP by bifurcation of the transmission. We present generic coupled mode theory to elucidate this effect. We also show that structural fluctuations of grating preserve EP but obscures their observation because of inhomogeneous broadening of transmission peaks.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zharkov S. M., Yumashev V. V., Moiseenko E. T., Altunin R. R., Solovyov L. A., Volochaev M. N., Zeer G. M., Nikolaeva N. S., Belousov O. V.
Заглавие : Thermokinetic study of aluminum-induced crystallization of a-Si: The effect of Al layer thickness
Колич.характеристики :24 с
Место публикации : Nanomaterials. - 2023. - Vol. 13, Is. 22. - Ст.2925. - ISSN 20794991 (eISSN), DOI 10.3390/nano13222925
Примечания : Cited References: 70. - This work was supported by the Russian Science Foundation under grant #22-13-00313
Аннотация: The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si)n multilayered films was studied using a complex of in situ methods (simultaneous thermal analysis, transmission electron microscopy, electron diffraction, and four-point probe resistance measurement) and ex situ methods (X-ray diffraction and optical microscopy). An increase in the thickness of the aluminum layer from 10 to 80 nm was found to result in a decrease in the value of the apparent activation energy Ea of silicon crystallization from 137 to 117 kJ/mol (as estimated by the Kissinger method) as well as an increase in the crystallization heat from 12.3 to 16.0 kJ/(mol Si). The detailed kinetic analysis showed that the change in the thickness of an individual Al layer could lead to a qualitative change in the mechanism of aluminum-induced silicon crystallization: with the thickness of Al ≤ 20 nm. The process followed two parallel routes described by the n-th order reaction equation with autocatalysis (Cn-X) and the Avrami–Erofeev equation (An): with an increase in the thickness of Al ≥ 40 nm, the process occurred in two consecutive steps. The first one can be described by the n-th order reaction equation with autocatalysis (Cn-X), and the second one can be described by the n-th order reaction equation (Fn). The change in the mechanism of amorphous silicon crystallization was assumed to be due to the influence of the degree of Al defects at the initial state on the kinetics of the crystallization process.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyarova T. E., Shanidze, Lev V., Lukyanenko A. V., Baron F. A., Krasitskaya, Vasilisa V., Kichkailo, Anna S., Tarasov A. S., Volkov N. V.
Заглавие : Protein biosensor based on Schottky barrier nanowire field effect transistor
Место публикации : Talanta. - 2022. - Vol. 239. - Ст.123092. - ISSN 0039-9140 (ISSN), DOI 10.1016/j.talanta.2021.123092. - ISSN 1873-3573 (eISSN)
Примечания : Cited References: 44. - The reported study was funded by RFBR according to the research project № 20-32-90134. The authors thank RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science (projects nos. 20-42-243007 and 20-42-240013) and the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886) for financial support. Electron microscopy investigations were conducted with the help of equipment of the Krasnoyarsk Territorial Shared Resource Center, Krasnoyarsk Scientific Center, Russian Academy of Sciences
Аннотация: A top-down nanofabrication approach involving molecular beam epitaxy and electron beam lithography was used to obtain silicon nanowire-based back gate field-effect transistors with Schottky contacts on silicon-on-insulator (SOI) wafers. The resulting device is applied in biomolecular detection based on the changes in the drain-source current (IDS). In this context, we have explained the physical mechanisms of charge carrier transport in the nanowire using energy band diagrams and numerical 2D simulations in TCAD. The results of the experiment and numerical modeling matched well and may be used to develop novel types of nanowire-based biosensors.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tetelbaum D., Nikolskaya A., Dorokhin M., Vasiliev V., Smolyakov D. A., Lukyanenko A. V., Baron F. A., Tarasov A. S.
Заглавие : Implanted gallium impurity detection in silicon by impedance spectroscopy
Место публикации : Mater. Lett. - 2022. - Vol. 308, Part B. - Ст.131244. - ISSN 0167577X (ISSN), DOI 10.1016/j.matlet.2021.131244
Примечания : Cited References: 11. - This study was supported by the Russian Foundation for Basic Research (grant No. 20-42-243007), Ministry of Science and Higher Education of the Russian Federation (project No. 075-03-2020-191/5), as well as the Government of the Russian Federation within the framework of the Megagrant for the creation of world-class laboratories (No. 075-15-2019-1886)
Аннотация: The results of determining the energy levels of boron-doped silicon implanted with gallium ions by impedance spectroscopy are reported. In the as-implanted sample the boron level remains the same and a second level appears close to the Ga-level reported in literature. In the sample annealed at 1000 °C, two levels are observed neither of which corresponds to the literature values for boron and gallium. It is assumed that in the as-implanted sample this method detects levels of gallium atoms located at a depth where ions penetrate due to the channeling effect, since a large concentration of defects at shallower depths does not allow detection of energy levels due to the Fermi level pinning. Explaining the results for the sample annealed after implantation requires additional research. The main result of this work is to establish the possibility of detecting impurity levels in ion-implanted silicon by impedance spectroscopy even in the absence of subsequent annealing.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Shanidze, Lev, Bondarev I. A., Baron F. A., Lukyanenko A. V., Yakovlev I. A., Volochaev M. N., Volkov N. V.
Заглавие : Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device
Коллективы : RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
Место публикации : Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст.2100459. - ISSN 1862-6300, DOI 10.1002/pssa.202100459. - ISSN 1862-6319(eISSN)
Примечания : Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886
Предметные рубрики: NANOSTRUCTURES
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Rautskii M. V., Yakovlev I. A., Tarasov A. S., Bondarev M. A.
Заглавие : Synthesis and characterization of epitaxial Mn5Ge3 thin films on a silicon substrate
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect.: Spin dynamics and magnetic resonances. - Ст.B.P2. - P.266-268. - ISBN 978-5-94469-051-7
Примечания : Cited References: 2. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities, (project no. 20-42-243007) and support by Krasnoyarsk Regional Fund of Science is acknowledged
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shalygina T. A., Rudenko M. S., Nemtsev I. V., Parfenov V. A., Voronina S. Yu.
Заглавие : Plasma-chemical method of silicon carbide modification to obtain particles with controlled surface morphology
Место публикации : Tech. Phys. Lett. - 2022. - Vol. 48, Is. 2. - P.57-60. - ISSN 10637850 (ISSN), DOI 10.21883/TPL.2022.02.53582.19042. - ISSN 10906533 (eISSN)
Примечания : Cited References: 9. - This study was conducted under state assignment from the Ministry of Science and Higher Education of the Russian Federation for the ”Smart Materials and Structures“ research laboratory (project No. FEFE-2020-0015 ”Development of Multipurpose Smart Materials and Structures Based on Modified Polymer Composite Materials Remaining Functional in Extreme Conditions“)
Аннотация: A plasma-chemical method for the modification of silicon carbide particles is presented, which makes it possible to obtain particles with a controlled surface morphology. The variable parameter of particle processing was the ratio of the fraction of plasma-forming (Ar) and additional (H) gases. It was shown that at Ar/H = 100/0, the formation of a carbon shell is observed; at Ar/H ratios of 91/9 and 84/16, the particles are characterized by a carbon shell decorated with silicon nanoparticles or nanowires, respectively. The modified particles were analyzed using scanning electron microscopy and Raman spectroscopy.
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