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1.


   
    A high-selectivity wideband bandpass dual-mode microstrip filter / B. A. Belyaev, S. A. Khodenkov, I. V. Govorun, A. M. Serzhantov // Dokl. Phys. - 2022. - Vol. 67, Is. 3. - P. 89-93, DOI 10.1134/S1028335822020021. - Cited References: 12. - This study was carried out within a State Assignment, project no. FEFE-2020-0013, of the Ministry of Science and Higher Education of the Russian Federation . - ISSN 1028-3358. - ISSN 1562-6903
Кл.слова (ненормированные):
microstrip resonator -- bandpass filter -- slope steepness -- frequency response -- dielectric substrate
Аннотация: A half-wave microstrip resonator design with an irregular strip conductor short-circuited to the screen by its ends has been investigated. Based on the resonances of the first two oscillatory modes of this resonator, a miniaturized second-order filter with a fractional bandwidth from 40% to 90% has been implemented, which has a wide high-frequency stopband. A prototype of the designed eight-order filter based on four dual-mode resonators with a passband center frequency of 2 GHz and a fractional bandwidth of 40% has been fabricated on an alumina substrate 45.0 × 10.5 × 1.0 mm3 in size with a permittivity of ε = 9.8. The filter frequency response slopes are extremely steepness due to two attenuation poles located on the left and right sides of the passband. The experimental characteristics of the prototype are in good agreement with the data of the numerical electromagnetic simulation of the 3D model of the filter.

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Публикация на русском языке Широкополосный высокоселективный микрополосковый фильтр на двухмодовых резонаторах [Текст] / Б. А. Беляев, С. А. Ходенков, И. В. Говорун, А. М. Сержантов // Доклады Академии наук. Физика, технические науки. - 2022. - Т. 503 № 1. - С. 57-62

Держатели документа:
Siberian State University of Science and Technology, 660014, Krasnoyarsk, Russia
Siberian Federal University, 660041, Krasnoyarsk, Russia
Kirenskii Institute of Physics, Krasnoyarsk Science Center, Siberian Branch, Russian Academy of Sciences, 660036, Krasnoyarsk, Russia

Доп.точки доступа:
Belyaev, B. A.; Khodenkov, S. A.; Govorun, I. V.; Serzhantov, A. M.
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2.


   
    A Highly Selective Bandpass Filter Based on Suspended Substrate Resonators with a Two-Sided Stripline Pattern / B. A. Belyaev [et al.] // Tech. Phys. Lett. - 2019. - Vol. 45, Is. 5. - P. 485-488, DOI 10.1134/S1063785019050225. - Cited References: 14. - This study was supported in part by the Ministry of Education and Science of the Russian Federation, agreement no. 14.575.21.0142, unique project identifier RFMEFI57517X0142. . - ISSN 1063-7850. - ISSN 1090-6533
РУБ Physics, Applied
Рубрики:
MICROSTRIP
   FEATURES

Аннотация: New resonator design employing a hairpin stripline conductor with a stub situated on one side of a dielectric substrate and regular stripline conductors (connected to a screen) on the other side. Eigenfrequencies of the first three oscillation modes of this resonator can be made closer to each other, so that the resonances of two modes are involved in the formation of the passband while the third mode resonance forms a minimum of the transmission coefficient adjacent to the passband. A structure comprising four resonators of this type has the characteristic of an eighth-order bandpass filter arranged in a case with 45 × 16 × 6.25-mm internal dimensions possessing f0 = 0.52 GHz central frequency with a 14% relative bandwidth. The filter is highly selective due to the attenuation poles being close to the pass band and a wide high-frequency stopband extending above a fivefold f0 value at a level of –100 dB.

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Публикация на русском языке Высокоселективный полосно-пропускающий фильтр на резонаторах с двухсторонним рисунком полосковых проводников на подвешенной подложке [Текст] / Б. А. Беляев [и др.] // Письма в ЖТФ. - 2019. - Т. 45 Вып. 10. - С. 13-16

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660074, Russia.

Доп.точки доступа:
Belyaev, B. A.; Беляев, Борис Афанасьевич; Serzhantov, A. M.; Bal'va, Y. F.; Бальва, Ярослав Федорович; Leksikov, An. A.; Лексиков, Андрей Александрович; Grushevskii, E. O.; Грушевский, Евгений Олегович; Ministry of Education and Science of the Russian Federation [14.575.21.0142, RFMEFI57517X0142]
}
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3.


   
    A highly selective stripline lowpass filter with more than 100-dB wide stopband attenuation / B. A. Belyaev, A. M. Serzhantov, A. A. Leksikov [et al.] // Tech. Phys. Lett. - 2020. - Vol. 46, Is. 4. - P. 364-367, DOI 10.1134/S1063785020040173. - Cited References: 8. - This study was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of agreement no. 02G25.31.0330. . - ISSN 1063-7850. - ISSN 1090-6533
РУБ Physics, Applied

Кл.слова (ненормированные):
lowpass filter -- substrate -- stripline resonator -- stopband
Аннотация: A new miniature design of a highly selective lowpass filter based on a suspended substrate with a two-sided stripline pattern has been developed. The filter frequency response slope (cutoff attenuation rate) and stopband attenuation depth are determined by transmission zeros, the number of which is equal to the filter order. An experimental prototype of a fifth-order lowpass filter on 0.5-mm-thick alumina substrate with dielectric permittivity ε = 9.8 has been synthesized with the aid of numerical electrodynamic analysis of a three-dimensional model. The cutoff frequency of the filter passband at a –1-dB level is fc = 1.75 GHz. The stopband width at a –100-dB attenuation level reaches 4.4fc.

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Публикация на русском языке Высокоселективный полосковый фильтр нижних частот с уровнем заграждения более 100 dB в широкой полосе [Текст] / Б. А. Беляев, А. М. Сержантов, Ан. А. Лексиков [и др.] // Письма в Журн. техн. физ. - 2020. - Т. 46 Вып. 8. - С. 10-13

Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia.

Доп.точки доступа:
Belyaev, B. A.; Беляев, Борис Афанасьевич; Serzhantov, A. M.; Leksikov, An. A.; Лексиков, Андрей Александрович; Bal'va, Y. F.; Бальва, Ярослав Федорович; Grushevskii, E. O.; Грушевский, Евгений Олегович; Khodenkov, S. A.; Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation [02G25.31.0330]
}
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4.


   
    A method of stopband widening in BPF based on two-conductor suspended-substrate resonators / A. A. Leksikov [et al.] // Prog. Electromagn. Res. Lett. - 2018. - Vol. 72. - P. 11-16, DOI 10.2528/PIERL17102302. - Cited References: 10 . - ISSN 1937-6480
Кл.слова (ненормированные):
Fourth order -- Microwave bandpass filter -- Stopband -- Stripline resonators -- Suspended substrates -- Wide upper stopband
Аннотация: A method aiming to widen the upper stopband in a microwave bandpass filter based on two-conductor suspended-substrate stripline resonators is described in this letter. Applicability of the method is illustrated by simulating and fabricating fourth-order filter that has a very wide upper stopband: Δfstop/f0 = 7.92 measured at a level -50 dB, which is achieved because the widths of the inner resonators in the structure are 1.4 times greater than that of the outer ones.

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Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Leksikov, A. A.; Лексиков, Александр Александрович; Serzhantov, A. M.; Сержантов, Алексей Михайлович; Govorun, I. V.; Говорун, Илья Валерьевич; Afonin, A. O.; Афонин, Алексей Олегович; Ugryumov, A. V.; Угрюмов, Андрей Витальевич; Leksikov, An. A.; Лексиков, Андрей Александрович
}
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5.


   
    A miniature filter on a suspended substrate with a two-sided pattern of strip conductors / B. A. Belyaev [et al.] // Tech. Phys. Lett. - 2016. - Vol. 42, Is. 6. - P. 622-625, DOI 10.1134/S1063785016060195. - Cited References: 15. - This study was supported in part by the Ministry of Education and Science of the Russian Federation, project no. 14.607.21.0039. . - ISSN 1063-7850
РУБ Physics, Applied
Рубрики:
HAIRPIN RESONATORS
   BANDPASS FILTER

   WIDE-STOPBAND

   100 DB

   MICROWAVE

   FEATURES

   DESIGN

Аннотация: A miniature bandpass filter of new design with original stripline resonators on suspended substrate has been studied. The proposed filters of third to sixth order are distinguished for their high frequency-selective properties and mush smaller size in comparison to analogs. It is shown that a broad stopband extending above three-fold central bandpass frequency is determined by weak coupling of resonators at resonances of the second and third modes. A prototype sixth-order filter with a central frequency of 1 GHz, manufactured on a ceramic substrate with dielectric permittivity ε = 80, has contour dimensions of 36.6 × 4.8 × 0.5 mm3. Parametric synthesis of the filter, based on electrodynamic 3D model simulations, showed quite good agreement with the results of measurements.

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Публикация на русском языке Миниатюрный фильтр на подвешенной подложке с двухсторонним рисунком полосковых проводников [Текст] / Б. А. Беляев [и др.] // Письма в Журн. техн. физ. : Физико-технический институт им. А. Ф. Иоффе РАН, 2016. - Т. 42 Вып. 12. - С. 30–37

Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Radiosvyaz’ Corporation, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Belyaev, B. A.; Беляев, Борис Афанасьевич; Voloshin, A. S.; Волошин, Александр Сергеевич; Bulavchuk, A. S.; Galeev, R. G.
}
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6.


   
    An ultra-wideband stripline bandpass filter with a noise suppression level of more than 100 dB / B. A. Belyaev, A. M. Serzhantov, A. A. Leksikov [et al.] // Tech. Phys. Lett. - 2020. - Vol. 46, Is. 8. - P. 787-791, DOI 10.1134/S1063785020080179. - Cited References: 9. - This work was financially supported by the Ministry of Science and Higher Education of the Russian Federation in the implementation of the integrated project "Creation of a production of earth stations of advanced satellite communications systems to ensure the coherence of hard, northern and Arctic territory of Russian Federation," implemented with the participation of the Federal Research Center "Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences|" (agreement number 075-11-2019-078 dated 13.12.2019) . - ISSN 1063-7850. - ISSN 1090-6533
РУБ Physics, Applied

Кл.слова (ненормированные):
passband filter -- resonator -- dielectric substrate -- strip conductors
Аннотация: An ultra-wideband bandpass filter formed by cascading of a novel high-pass filter (HPF) and a low-pass filter (LPF) on suspended substrates with a two-sided pattern of strip conductor has been investigated. The high selectivity of the HPF is ensured by the transmission zeros near the passband, the number of which is equal to the filter order. A second-order HPF has been designed on a 0.5-mm-thick substrate with a permittivity of ε = 9.8 using the numerical electrodynamic analysis of a 3D model of the filter. The experimental HPF prototype has a cutoff frequency of fb = 0.25 GHz at a level of –3 dB and a passband that extends to 5 GHz. The ultra-wideband bandpass filter formed by cascading of the LPF and the designed HPF has a fractional bandwidth of Δf/f0 = 150% with a central frequency of f0 = 1 GHz. It has the broad and deep high-frequency stopband, which extends to a frequency of 7.8f0 at a suppression level of –100 dB.

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Публикация на русском языке Полосковый сверхширокополосный полосно-пропускающий фильтр с уровнем подавления помех более 100 dB [Текст] / Б. А. Беляев, А. М. Сержантов, Ан. А. Лексиков [и др.] // Письма в Журн. техн. физ. - 2020. - Т. 46 Вып. 16. - С. 7-11

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Belyaev, B. A.; Беляев, Борис Афанасьевич; Serzhantov, A. M.; Leksikov, An. A.; Лексиков, Андрей Александрович; Bal'va, Y. F.; Бальва, Ярослав Федорович; Grushevskii, E. O.; Грушевский, Евгений Олегович; Ministry of Science and Higher Education of the Russian Federation [075-11-2019-078]
}
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7.


   
    Anisotropic magnetization of an NbN film / D. M. Gokhfeld, N. E. Savitskaya, S. I. Popkov [et al.] // J. Exp. Theor. Phys. - 2022. - Vol. 134, Is. 6. - P. 707-712, DOI 10.1134/S1063776122060097. - Cited References: 31. - We are grateful to I.V. Nemtsev for measurements on the scanning electron microscope, S.A. Skorobogatov for his help in magnetic measurements (scanning electron microscopy and magnetic measurements have been performed at the Krasnoyarsk Regional Collective Usage Center of the Federal Research Center “Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences”) . - ISSN 1063-7761
Кл.слова (ненормированные):
Critical currents -- Magnetization -- Niobium compounds -- Nitrogen compounds -- Reactive sputtering -- Scanning electron microscopy -- Superfluid helium -- Anisotropic magnetization -- Columnar structures -- Field orientation -- Film magnetization -- Film surfaces -- Liquid helium temperature -- Magnetization loops -- Niobium nitride films -- Quartz substrate -- Structural and magnetic properties -- Current density
Аннотация: The structural and magnetic properties of a niobium nitride (NbN) film prepared by reactive sputtering onto a quartz substrate are investigated. It is shown using scanning electron microscopy that the film has a columnar structure with a diameter of crystallite columns of about 50 nm. The film magnetization loops are measured for the field orientation parallel and perpendicular to its surface. Based on the experimental data, the critical current densities of the film are estimated in both cases. For the field parallel to the film surface, the estimate is 6.5 × 104 A/cm2 at the liquid helium temperature. For the field perpendicular to the surface, the critical current density is close to the depairing current density (107 A/cm2). Analysis of the results based on different models of magnetic vortex pinning in superconductors shows that in the former case, pinning occurs at the boundaries of columns in the bulk of the sample, while in the latter case, it is determined by the influence of the surface barrier.

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Публикация на русском языке Анизотропная намагниченность пленки NbN [Текст] / Д. М. Гохфельд, Н. Е. Савицкая, С. И. Попков [и др.] // Журн. эксперим. и теор. физ. - 2022. - Т. 161 Вып. 6. - С. 833-839

Держатели документа:
Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation
Konstantinov Petersburg Nuclear Physics Institute, Nation Research Center “Kurchatov Institute”, Leningrad oblast, Gatchina, 188300, Russian Federation
Krasnoyarsk Electric Railway-Carriage Repair Works, Krasnoyarsk, 660021, Russian Federation
Mordovia State University, Saransk, 430000, Russian Federation

Доп.точки доступа:
Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Savitskaya, N. E.; Popkov, S. I.; Kuzmichev, N. D.; Vasyutin, M. A.; Balaev, D. A.; Балаев, Дмитрий Александрович
}
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8.


    Aver'yanov, E. M.
    Local-Field Anisotropy of a Light Wave in Quasi-Two-Dimensional Soft-Matter Objects / E. M. Aver'yanov // J. Exp. Theor. Phys. - 2010. - Vol. 110, Is. 4. - P. 622-636, DOI 10.1134/S1063776110040102. - Cited References: 73. - This study was supported by the Presidium of the Russian Academy of Sciences within the Program of Basic Research (project no. 27.1) and the Siberian Branch of the Russian Academy of Sciences within the Program of Interdisciplinary Basic Research (project no. 5). . - ISSN 1063-7761
РУБ Physics, Multidisciplinary
Рубрики:
INTEGRATED OPTICAL TECHNIQUES
   LANGMUIR-BLODGETT-FILMS

   SMECTIC LIQUID-CRYSTALS

   UNIAXIAL POLYMER-FILMS

   MOLECULAR-ORIENTATION

   INTERNAL FIELD

   DIELECTRIC-CONSTANT

   SPECTRAL FEATURES

   REFRACTIVE-INDEX

   THIN-FILMS

Кл.слова (ненормированные):
Anisotropic films -- Bilayer lipid membrane -- Chemical structure -- Comblike polymers -- Conductive Polymer -- Discotics -- Dispersion of refractive index -- Experimental data -- Experimental values -- Hexatic-B phase -- Isotropization -- Langmuir films -- Light wave -- Lorentz -- Macromolecular polymers -- Model approach -- Molecular polarizabilities -- Optical axis -- Order parameter -- Orientational order parameters -- Orientational orderings -- Orientational orders -- Smectic layers -- Smectic-A -- Smectics -- Soft matter -- Structural unit -- Sub-micron films -- Substrate types -- Tensor components -- Visible range -- Anisotropy -- Cell membranes -- Conductive plastics -- Conjugated polymers -- Electronic structure -- Light measurement -- Liquid crystal polymers -- Molecules -- Multilayer films -- Organic polymers -- Phase transitions -- Polarization -- Polymers -- Refractive index -- Substrates -- Tensors -- Two dimensional -- Conductive films
Аннотация: Experimental values of the Lorentz tensor components L-j for uniaxial quasi-two dimensional "soft matter" objects on substrates (bilayer lipid membranes, multilayer Langmuir films, smectics A, hexatic smectics B, submicron films of discotics Col(hd), micron anisotropic films of liquid-crystal comblike polymers and macromolecular polymers, submicron films of conjugated conductive polymers), freely suspended sub-micron films of smectics A, and uniaxially stretched micron films of conjugated conductive polymers have been determined using dispersion of refractive indices in the visible range. The dependences of the components L-j on the type of orientation (axial, planar) of uniaxial molecules (structural units of the film) with respect to the optical axis of the film, the film thickness, the substrate type, the chemical structure of molecules, and their long-range orientational order are established. It is revealed that the smectic A-hexatic B phase transition and two-dimensional crystallization of the smectic layer lead to changes in the components L-j due to the change in the orientational ordering of molecules as a result of the relation between the orientational and hexatic order parameters. All the above objects are characterized by isotropization of the Lorentz tensor L and the local-field tensor f with a simultaneous decrease in the birefringence of the sample and in the anisotropy of the molecular polarizability due to the change in the electronic structure of molecules. The correction for the anisotropy of the local-field tensor f to the orientational order parameter or the anisotropy of the molecular polarizability increases. The existing model approaches to calculating the components L-j for the objects under consideration are compared with the experimental data.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Аверьянов, Евгений Михайлович
}
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9.


    Belyaev, B. A.
    The effect of substrate artificial texture on high frequency properties of thin magnetic films / B. A. Belyaev, A. V. Izotov, P. N. Solovev // International symposium «Magnetics and optics research» MORIS-2013 : Technical digest. - 2013. - P. 54-55

Материалы конференции

Доп.точки доступа:
Izotov, A. V.; Изотов, Андрей Викторович; Solovev, P. N.; Соловьев, Платон Николаевич; Беляев, Борис Афанасьевич; Magnetics and Optics Research International Symposium(2013 ; Dec. 2-5 ; Omiya Sonic City, Saitama, Japan)
}
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10.


   
    Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures / N. V. Volkov [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 526-529, DOI 10.4028/www.scientific.net/SSP.190.526 . - ISBN 1012-0394. - ISBN 9783037854365
Кл.слова (ненормированные):
Hybrid structure -- Mis transition -- Photoelectric effect -- Schottky barrier -- Channel switching -- Comparative analysis -- Electron hole pairs -- Fe films -- Fe layer -- Ferromagnetic films -- Hybrid structure -- Optical effects -- Optical radiations -- Photogeneration -- Planar geometries -- Schottky barriers -- Semiconductor substrate -- Temperature variation -- Critical currents -- Interfaces (materials) -- Magnetic materials -- Photoelectricity -- Schottky barrier diodes -- Silicon -- Switching circuits -- Transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
}
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11.


    Bondarev, I. A.
    Magnetic and transport properties of the epitaxial Fe3Si film on a Si substrate / I. Bondarev // Int. workshop on actual probl. of cond. matt. phys. : Program. Book of abstracts / Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P. 25

Материалы совещания

Доп.точки доступа:
Ovchinnikov, S. G. \предс. прогр. ком.\; Овчинников, Сергей Геннадьевич; Бондарев, Илья Александрович; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Siberian Federal UnivercityInternational Workshop on Actual Problems of Condensed Matter Physics(27 Mar. - 1 Apr. 2017 ; Krasnoyarsk / Cheremushki)
}
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12.


   
    Co/Pt multilayer structures on he crystal MgO and Si substrate as a media for perpendicular magnetic recording [Text] / P. D. Kim, I. A. Turpanov, S. V. Stolyar [et al.] // The Physics of Metals and Metallography. - 2006. - Vol. 102, Suppl. 1. - P. S83-S85DOI 10.1134/S0031918X06140213. - Библиогр.: 6
Аннотация: In this work, the crystal structure and hysteretic magnetic properties of equiatomic single-crystal CoPt/MgO films prepared by magnetron sputtering and their modifications after heat treatment are studied. A perpendicular magnetic anisotropy is obtained in annealed films in a film thickness range of 2 d≤16 nm. The correlation between the magnitude of magnetocrystalline anisotropy constant of CoPt films and the order parameter of the L10 superstructure of these alloys is ascertained. The influence of the single-crystal MgO substrate on the structure and magnetic properties of the films of equiatomic CoPt alloys is also investigated.

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Держатели документа:
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036 Russia
Krasnoyarsk State University, Krasnoyarsk, 660041 Russia

Доп.точки доступа:
Kim, P. D.; Ким, Петр Дементьевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Stolyar, S. V.; Столяр, Сергей Викторович; Yushkov, V. I.; Юшков, Василий Иванович; Khalyapin, D. L.
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13.


   
    Complex study of magnetization reversal mechanisms of FeNi/FeMn bilayers depending on growth conditions / C. Gritsenko, V. Lepalovskij, M. Volochaev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 7. - Ст. 1178, DOI 10.3390/nano12071178. - Cited References: 44. - This work has been supported by the grant of the Slovak Research and Development Agency under the contract No APVV-20-0324. This work was in part financially supported by the Ministry of Science and Higher Education of the Russian Federation, Subject of the state task No. FEUZ-2020-0051 . - ISSN 2079-4991
Кл.слова (ненормированные):
exchange bias -- exchange spring -- AFM grain size -- substrate temperature -- hysteresis loop asymmetry -- magnetization reversal
Аннотация: Magnetization reversal processes in the NiFe/FeMn exchange biased structures with various antiferromagnetic layer thicknesses (0–50 nm) and glass substrate temperatures (17–600 °C) during deposition were investigated in detail. Magnetic measurements were performed in the temperature range from 80 K up to 300 K. Hysteresis loop asymmetry was found at temperatures lower than 150 K for the samples with an antiferromagnetic layer thickness of more than 10 nm. The average grain size of FeMn was found to increase with the AFM layer increase, and to decrease with the substrate temperature increase. Hysteresis loop asymmetry was explained in terms of the exchange spring model in the antiferromagnetic layer.

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Держатели документа:
Research and Education Center “Smart Materials and Biomedical Applications”, Immanuel Kant Baltic Federal University, Gaidara str., 6, Kaliningrad, 236041, Russian Federation
Solid State Magnetism Department, Institute of Natural Sciences and Mathematics, Ural Federal University, Yekaterinburg, 620002, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, Krasnoyarsk, 660036, Russian Federation
Institute of Physics, Faculty of Science, Pavol Jozef Safarik University, Park Angelinum 9, Kosice, 040 01, Slovakia
Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Duisburg, 47057, Germany
Faculty of Applied Physics and Mathematics, Gdansk University of Technology, Narutowicza 11/12, Gdansk, 80233, Poland
Materials Science and Metallurgy Shared Use Research and Development Center, National University of Science and Technology MISiS, Moscow, 119049, Russian Federation

Доп.точки доступа:
Gritsenko, C.; Lepalovskij, V.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Komanicky, V.; Gorkovenko, A.; Pazniak, H.; Gazda, M.; Andreev, N.; Rodionova, V.
}
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14.


   
    Contact-induced spin polarization in graphene/h-BN/Ni nanocomposites / P. V. Avramov [et al.] // J. Appl. Phys. - 2012. - Vol. 112, Is. 11. - Ст. 114303. - P. , DOI 10.1063/1.4767134. - Cited References: 47. - This work was supported by JAEA Research fellowship (P.V.A.). P.V.A. also acknowledges JAEA ASRC and Molecular Spintronics Group for hospitality and fruitful collaboration. The authors are grateful to the ICS SB RAS and SFU CC (Krasnoyarsk), ISC RAS and MSU CRC, (SKIF MSU "Chebyshev", Moscow) for computer resources. This work was partially supported by the RFBR grant 12-02-31417. . - ISSN 0021-8979
РУБ Physics, Applied + Boron nitride + Electronic structure + Nanocomposites + Plates (structural components) + Spin polarization + Graphene
Рубрики:
HEXAGONAL BORON-NITRIDE
   TRILAYER GRAPHENE

   NI(111) SURFACE

   GRAPHITE

   APPROXIMATION

   SPINTRONICS

   DIFFRACTION

   SIMULATION

   SUBSTRATE

   CARBON

Аннотация: Atomic and electronic structure of graphene/Ni(111), h-BN/Ni(111) and graphene/h-BN/Ni(111) nanocomposites with different numbers of graphene and h-BN layers and in different mutual arrangements of graphene/Ni and h-BN/Ni at the interfaces was studied using LDA/PBC/PW technique. Using the same technique corresponding graphene, h-BN and graphene/h-BN structures without the Ni plate were calculated for the sake of comparison. It was suggested that C-top:C-fcc and N-top:B-fcc configurations are energetically favorable for the graphene/Ni and h-BN/Ni interfaces, respectively. The Ni plate was found to induce a significant degree of spin polarization in graphene and h-BN through exchange interactions of the electronic states located on different fragments. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767134]

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Держатели документа:
[Avramov, Pavel V.
Sakai, Seiji
Ohtomo, Manabu
Entani, Shiro
Matsumoto, Yoshihiro
Naramoto, Hiroshi] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan
[Avramov, Pavel V.
Kuzubov, A. A.
Eleseeva, Natalia S.] LV Kirensky Inst Phys SB RAS, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Avramov, P. V.; Аврамов, Павел Вениаминович; Kuzubov, A. A.; Sakai, Seiji; Ohtomo, Manabu; Entani, Shiro; Matsumoto, Yoshihiro; Naramoto, Hiroshi; Eleseeva, N. S.; Елисеева, Наталья Сергеевна
}
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15.


   
    Controllable propagation of surface plasmon polaritons in chains of non-spherical nanoparticles on dielectric substrate / I. L. Rasskazov [и др.] // Electromagnetic & Light Scattering XV : abstracts. - Leipzig, 2015. - Ст. 88

Материалы конференции

Доп.точки доступа:
Rasskazov, I. L.; Рассказов, Илья Леонидович; Karpov, S. V.; Карпов, Сергей Васильевич; Panasyuk, G. Y.; Markel, V. A.; Electromagnetic and Light Scattering Conference(15 ; 2015 ; Jun. ; 21-26 ; Leipzig, Germany)
}
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16.


   
    Cu-Ag and Ni-Ag meshes based on cracked template as efficient transparent electromagnetic shielding coating with excellent mechanical performance / A. S. Voronin, Y. V. Fadeev, I. V. Govorun [et al.] // J. Mater. Sci. - 2021. - Vol. 56. Is. 26. - P. 14741-14762, DOI 10.1007/s10853-021-06206-4. - Cited References: 79. - This work was supported by Russian Foundation for Basic Research project «mol_a» № 18-38-00852 and a scholarship from the President of the Russian Federation SP-2235.2019.1. The sputtering Ag seed mesh and physicochemical analysis of materials was carried out on the equipment of Krasnoyarsk Regional Center of Research Equipment of Federal Research Center «Krasnoyarsk Science Center SB RAS» . - ISSN 0022-2461. - ISSN 1573-4803
РУБ Materials Science, Multidisciplinary
Рубрики:
COPPER NANOWIRES
   METALLIC MESH

   PLASTIC SUBSTRATE

   ELECTRODES

   FILMS

Аннотация: Nowadays, the technical advances call for efficient electromagnetic interference (EMI) shielding of transparent devices which may be subject to data theft. We developed Cu–Ag and Ni–Ag meshes on flexible PET substrate for highly efficiency transparent EMI shielding coating. Cu–Ag and Ni–Ag meshes obtained with galvanic deposition of copper and nickel on thin Ag seed mesh which was made by cracked template method. Coefficients S11, S21 and shielding efficiency (SE) were measured for Cu–Ag and Ni–Ag meshes in X-band (8–12 GHz) and K-band (18–26.5 GHz). 90 s copper deposition increase SE from 23.2 to 43.7 dB at 8 GHz with a transparency of 82.2% and a sheet resistance of 0.25 Ω/sq. The achieved maximum SE was 47.6 dB for Cu–Ag mesh with 67.8% transparency and 41.1 dB for Ni–Ag mesh with 77.8% transparency. Cu–Ag and Ni–Ag meshes have high bending and long-term stability. Minimum bend radius is lower than 100 µm. This effect allows to produce different forms of transparent shielding objects, for example, origami method. Our coatings are the leading among all literary solutions in three-dimensional coordinates: of sheet resistance–optical transmittance–cost of produced.

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Держатели документа:
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Fed Res Ctr,FRC KSC SB RAS, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Reshetnev Univ, Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia.
Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Voronin, A. S.; Fadeev, Y. V.; Govorun, I. V.; Говорун, Илья Валерьевич; Podshivalov, I. V.; Подшивалов, Иван Валерьевич; Simunin, M. M.; Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Karpova, D. V.; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Karacharov, A. A.; Nemtsev, I. V.; Немцев, Иван Васильевич; Khartov, S. V.; Russian Foundation for Basic Research projectRussian Foundation for Basic Research (RFBR) [18-38-00852]; Russian FederationRussian Federation [SP-2235.2019.1]
}
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17.


   
    Determination of anchoring energy for nematic onto ferroelectric substrate / V. A. Gunyakov [et al.] // Solid State Commun. - 1993. - Vol. 87, Is. 9. - P. 751-753, DOI 10.1016/0038-1098(93)90406-D. - Cited References: 8 . - ISSN 0038-1098
РУБ Physics, Condensed Matter
Рубрики:
LIQUID-CRYSTALS
   SURFACE

Аннотация: A technique to determine anchoring energy of planar MBBA layer with cleavage surfaces of triglycine sulphate is presented. The method is based on guest-host phenomenon in impure nematic. The anchoring energy W = (1.0 +/- 0.3).10(-4) erg/cm2 is calculated within Rapini-Papoular approximation.

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Держатели документа:
L.V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, 660036 Krasnoyarsk, Russian Federation
ИФ СО РАН

Доп.точки доступа:
Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Parshin, A. M.; Паршин, Александр Михайлович; Khrustalev, B. P.; Хрусталев, Борис Петрович; Shabanov, V. F.; Шабанов, Василий Филиппович
}
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18.


   
    Determination of magnetic anisotropies and miscut angles in epitaxial thin films on vicinal (111) substrate by the ferromagnetic resonance / B. A. Belyaev [et al.] // J. Magn. Magn. Mater. - 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P. 181-184, DOI 10.1016/j.jmmm.2016.12.081. - Cited References:16. - This work was supported by the Ministry of Education and Science of the Russian Federation, Task no. 3.528.2014K. . - ISSN 0304-8853. - ISSN 1873-4766
РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
SURFACE
   SPECTROMETER

   SPINTRONICS

Кл.слова (ненормированные):
Thin film -- Ferromagnetic resonance -- Magnetic anisotropy -- Vicinal (111) -- surface -- Iron silicide
Аннотация: A method for determining magnetic anisotropy parameters of a thin single-crystal film on vicinal (111) substrate as well as substrate miscut angles from angular dependence of ferromagnetic resonance field has been proposed. The method is based on the following: (i) a new approach for the solution of the system of nonlinear equations for equilibrium and resonance conditions; (ii) a new expression of the objective function for the fitting problem. The study of the iron silicide films grown on vicinal Si(111) substrates with different miscut angles confirmed the efficiency of the method. The proposed method can be easily generalized to determine parameters of single-crystal films grown on substrates with an arbitrary cut.

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Доп.точки доступа:
Belyaev, B. A.; Беляев, Борис Афанасьевич; Izotov, A. V.; Изотов, Андрей Викторович; Solovev, P. N.; Соловьев, Платон Николаевич; Yakovlev, I. A.; Ministry of Education and Science of the Russian Federation [3.528.2014K]; Euro-Asian Symposium "Trends in MAGnetism"(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); "Trends in MAGnetism", Euro-Asian Symposium(6 ; 2016 ; Aug. ; 15-19 ; Krasnoyarsk); Институт физики им. Л.В. Киренского Сибирского отделения РАН
}
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19.


   
    Effect of a Substrate on the Magnetoelectric Effect in Rare-Earth-Doped Bismuth Iron Garnet / S. S. Aplesnin [et al.] // JETP Letters. - 2019. - Vol. 110, Is. 3. - P. 223-230, DOI 10.1134/S0021364019150074. - Cited References: 29. - This work was supported jointly by the Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory, and the Krasnoyarsk Science Foundation (project no. 18-42-240001 “Temperature-Induced Reversal of the Sign of Magnetoelectric Tensor Components in Neodymium-Doped Bismuth Iron Garnet”), as well as in part by the Russian Foundation for Basic Research (project nos. 18-32-00079_mol_a and 18-52-00009_bel_a) and by the Russian Ministry of Science and Higher Education (state contract no. 3.5743.2017/6.7). . - ISSN 0021-3640
Аннотация: The mechanism of relaxation of the electric polarization in thin films of rare-earth-doped bismuth iron garnet on glass and gallium gadolinium garnet substrates is determined in magnetic fields of 0 and 12 kOe in the temperature range of 80–380 K. The change in the sign of the residual electric polarization after switching off the electric field and the magnetic-field-induced shift of the hysteresis loop in the applied magnetic field are found. Linear and quadratic magnetoelectric effects with the tensor components depending on the substrate type are observed. The linear magnetoelectric effect is related to the spin–orbit coupling of electrons at the film–substrate interface, whereas the quadratic one is determined by the exchange–striction mechanism.

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Публикация на русском языке

Держатели документа:
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660014, Russian Federation
Kirensky Institute of Physics, Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Department of Materials Science and Technology, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Masyugin, A. N.; Sitnikov, M. N.; Ishibashi, T.
}
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20.


   
    Effect of exposure to optical radiation and temperature on the electrical and optical properties of In2O3 films produced by autowave oxidation / I. A. Tambasov [et al.] // Semiconductors. - 2014. - Vol. 48, Is. 2. - P. 207-211, DOI 10.1134/S1063782614020286. - Cited References: 42. - This study was supported by the Ministry of Education and Science of the Russian Federation, Federal Targeted Program "Research and Development in Priority Fields of Development of the Science and Technology Complex of Russia for 2007-2013", state contract no. 14.513.11.0023. . - ISSN 1063-7826. - ISSN 1090-6479
РУБ Physics, Condensed Matter
Рубрики:
GAS SENSOR RESPONSE
   INDIUM OXIDE-FILMS

   THIN-FILMS

   HIGH-PERFORMANCE

   TIN OXIDE

   TRANSPARENT CONDUCTORS

   SUBSTRATE-TEMPERATURE

   ROOM-TEMPERATURE

   TRANSISTORS

   PHOTOREDUCTION

Аннотация: Indium-oxide films are synthesized by the autowave-oxidation reaction. It is shown that, upon exposure to optical radiation, the resistance of the films sharply decreases and the maximal relative change in the resistance is 52% at room temperature. Two resistance relaxation rates after termination of the irradiation, 15 Omega s(-1) during the first 30 s and 7 Omega s(-1) over the remaining time, are determined. The data of infrared spectroscopy of the films show that exposure to optical radiation induces a 2.4% decrease in the transmittance at a wavelength of 6.3 mu m. It is found that, after termination of the irradiation, the transmittance gradually increases with a rate of 0.006% s(-1). It is suggested that photoreduction is the dominant mechanism responsible for changes in the electrical and optical properties of the In2O3 films.

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Публикация на русском языке Влияние фотооблучения и температуры на электрические и оптические свойства пленок In2O3, полученных автоволновым окислением [Текст] / И. А. Тамбасов [и др.] // Физ. и техника полупроводников : Санкт-Петербургская издательская фирма "Наука" РАН, 2014. - Т. 48 Вып. 2. - С. 220-224

Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian State Aerosp Univ, Krasnoyarsk 660037, Russia
Joint Stock Co Academician MF Reshetnev Informat, Zheleznogorsk 662972, Russia

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Myagkov, V. G.; Мягков, Виктор Григорьевич; Ivanenko, A. A.; Иваненко, Александр Анатольевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Yozhikova, E. V.; Maksimov, I. A.; Ivanov, V. V.; Ministry of Education and Science of the Russian Federation [14.513.11.0023]
}
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