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Вид документа : Статья из журнала Шифр издания :
Автор(ы) : Aplesnin S. S., Romanova O. B., Har'kov A. M., Balaev D. A., Gorev M. V., Vorotynov A. M., Sokolov V. V., Pichugin A.
Заглавие : Metal–semiconductor transition in SmxMn1−xS solid solutions
Место публикации : Phys. Status Solidi B. - 2012. - Vol. 249, Is. 4. - P.812-817. - ISSN 0370-1972, DOI 10.1002/pssb.201147327 Примечания : Cited References: 27. - This study was supported by the Russian Foundation for Basic Research project No 09-02-00554_a; No 09-02-92001-NNS_a; No 11-02-98018 r_sibir_a; ADTP "Development of scientific potential of the higher school" No. 2.1.1/11763.
Предметные рубрики: Magnetic-properties Phase-transition SmS Valence Pressure Crystal Lattice CeRhSb Ключевые слова (''Своб.индексиров.''): kondo effect--metal-semiconductor transition--semiconductors--variable-valence elements Аннотация: The electrical resistivity of the SmxMn1−xS (0.15 ≤ x ≤ 0.25) solid solutions in the temperature range of 80–300 K was measured. Minimum and maximum in the temperature dependence of the resistivity were found, respectively, at T = 220 K for x = 0.15 and at T = 100 K for x = 0.2 compounds. This behavior is explained from the result of the mobility-edge movement, the disorder being due to elastic deformation and spin density fluctuations with short-range order. Metal–semiconductor phase transition versus concentration at xc = 0.25 is observed. Resistivity is described by scattering electrons with acoustic phonon mode and with localized manganese spin. From the thermal expansion coefficient the compression of the lattice below the Néel temperature for Sm0.2Mn0.8S is found.
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