Библиотека института физики им. Л.В. Киренского СО РАН

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Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

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Вид документа : Статья из сборника (выпуск продолж. издания)
Шифр издания :
Автор(ы) : Chepkasov I. V., Popov Z. I.
Заглавие : Analysis of thermal effects on copper nanoparticles synthesized from the gas phase
Коллективы : International scientific conference on radiation-thermal effects and processes in inorganic materials , International Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials (Nov 03-08, 2014; Tomsk, Russia)
Место публикации : IOP Conf. Ser.: Mater. Sci. Eng. - 2015. - Vol. 81. - Ст.012033. - , DOI 10.1088/1757-899X/81/1/012033
Примечания : Cited References:14
Предметные рубрики: DEVICES
FILMS
Аннотация: Molecular dynamics method using the tight-binding potential to carry out simulation of ultrafast heating of the synthesized particles from the gas phase to a temperature T= 600K and T= 900K, at which the particles were kept about 10 ns. As a result of the simulation revealed that the method of ultrafast heating the particles to high temperatures virtually eliminates the possibility of a clusters of defective education, but as a result of the heat treatment, the some of investigated particles can disconnect (burst) into smaller clusters.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Fransson J., Eriksson O., Sandalov I. S.
Заглавие : Effects of nonorthogonality in the time-dependent current through tunnel junctions
Место публикации : Phys. Rev. B: AMERICAN PHYSICAL SOC, 2001. - Vol. 64, Is. 15. - Ст.153403. - ISSN 0163-1829, DOI 10.1103/PhysRevB.64.153403
Примечания : Cited References: 20
Предметные рубрики: LOCAL OXIDATION
TRANSPORT
DEVICES
Аннотация: A theoretical technique which allows one to include contributions from nonorthogonality of the electron states in the leads connected to a tunneling junction is derived. The theory is applied to a single-barrier, tunneling structure and a simple expression for the time-dependent tunneling current is derived showing explicit dependence of the overlap. The overlap proves to be necessary for a better quantitative description of the tunneling current, and our theory reproduces experimental results substantially better compared to standard approaches.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Aver'yanov E. M.
Заглавие : Influence of the dimension of a polycrystalline film and the optical anisotropy of crystallites on the effective dielectric constant of the film
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2016. - Vol. 58, Is. 8. - P.1634-1641. - ISSN 10637834 (ISSN), DOI 10.1134/S1063783416080035
Примечания : Cited References: 41
Предметные рубрики: EFFECTIVE REFRACTIVE-INDEX
CONJUGATED POLYMER
POLY(P-PHENYLENE VINYLENE)
SPECTROSCOPIC ELLIPSOMETRY
ELECTRICAL-CONDUCTIVITY
LOCAL-FIELD
THIN-FILMS
DISPERSION
POLYFLUORENE
DEVICES
Аннотация: The dimension D of a polycrystalline film and the optical anisotropy m = εz/εx of uniaxial crystallites with the principal components εx = εy and εz of the tensor of the dielectric constant have been shown to produce a strong influence on the effective dielectric constant εD* and the effective refractive index nD* = (εD*)1/2 of the film in the optical transparency region, as well as on the boundaries of the intervals BDl ≤ εD* ≤ BDu. The intervals Δ2(m) = B2l–B2u and Δ3(m) = B3l–B3u are separated by a gap for m in the range 1 m 2, whereas the theoretical dependence ε2*(m) is separated by a gap from the interval Δ3(m) for m in the range 1 m 4. This is confirmed by a comparison of the experimental (noP) and theoretical (nD*) ordinary refractive indices for uniaxial polycrystalline films of the conjugated polymer poly(p-phenylene vinylene) (PPV) with uniaxial crystallites and appropriate values of m. In the visible transparency region of the PPV films with a change in m(λ) in the range 2 m(λ) 3 due to the dependence of the components εx,z(λ) on the light wavelength λ, the refractive indices noP2(λ) 3 near the electronic absorption band of the crystallites, the values of εoP(λ) lie in the region of the overlap of the intervals Δ2(m) and Δ3(m). The boundaries mc of the range 1 m mc are determined, for which the interval Δ2(m) is separated by a gap from the dependences ε3*(m) corresponding to the effective medium theory with spherical crystallites and hierarchical models of a polycrystal, as well as from the proposed new dependence ε3*(m).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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