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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Knyazev, Yu. V., Kazak N. V., Platunov M. S., Ivanova N. B., Bezmaternykh L. N., Arauzo A., Bartolome J., Ovchinnikov S. G.
Заглавие : Disorder- and correlation-induced charge carriers localization in oxyborate MgFeBO4, Mg0.5Co0.5FeBO4, CoFeBO4 single crystals
Место публикации : J. Alloys Compd.: Elsevier Science, 2015. - Vol. 642. - P.232-237. - ISSN 0925, DOI 10.1016/j.jallcom.2015.04.056. - ISSN 18734669(eISSN)
Примечания : Cited References:32. - This work has been financed by Council for Grants of the President of the Russian Federation (Project Nos. NSh-2886.2014.2, SP-938.2015.5), Russian Foundation for Basic Research (Project Nos. 13-02-00958-a, 13-02-00358-a, 14-02-31051-mol-a). The work of one of coauthors (M.S.P.) was supported by the grant of KSAI "Krasnoyarsk Regional Fund of Supporting Scientific and Technological Activities'' and by the Program of Foundation for Promoting the Development of Small Enterprises in Scientific and Technical Sphere ("UMNIK'' program). Financial support from the Spanish MINECO MAT11/23791 and DGA IMANA project E-34 is acknowledged.
Предметные рубрики: WARWICKITE
Fe2OBO3
FeBO3
Ключевые слова (''Своб.индексиров.''): transition metal alloys and compounds--disordered system--semiconductors--electrical transport
Аннотация: The temperature dependence of the resistivity of single crystalline Mg1−xCoxFeBO4 samples with x = 0.0, 0.5, 1.0 is investigated for the temperature range (210–400 K). The conduction was found to be governed by Mott variable-range hopping (VRH) in the low-temperature range (T = 210–270 K) and by thermo-activation mechanism in the high-temperature range (T = 280–400 K). Microscopic electronic parameters, such as the density of the localized states near the Fermi level, localization length, the hopping length, and the activation energy have been obtained. The change of the activation energy observed at high-temperature range was attributed to local structure distortions around Fe and Co atoms. The complicated behavior of charge transfer mechanisms is discussed based on two approaches: atomic disorder and electron correlations.Температурная зависимость сопротивления монокристаллических образцов Mg1- XCoxFeBO4 с х = 0,0; 0.5, 1.0 исследована в интервале температур (210-400 К). Было установлено, что проводимость регулируется Мотт-переменной длиной прыжка (VRH) в области низких температур (T = 210-270 К) и термо-активационным механизмом в области высоких температур (Т = 280-400 К). Микроскопические электронные параметры, такие как плотность локализованных состояний вблизи уровня Ферми, длины локализации, длина прыжка, и энергия активации были получены. Изменение энергии активации наблюдается при высокой температурном Диапазоне, что было связано с локальными искажениями структуры вокруг Fe и Co атомов. Сложный механизм поведения переноса заряда обсуждается на основе двух подходов: атомный беспорядок и электронная корреляция.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavriliuk A. G., Kazak N. V., Ovchinnikov S. G., Lyubutin I. S.
Заглавие : Electronic Transitions in the VBO3 Single Crystal at High Pressures
Коллективы :
Разночтения заглавия :авие SCOPUS: Electronic transitions in the VBO3 single crystal at high pressures
Место публикации : JETP Letters. - 2008. - Vol. 88, Is. 11. - P.762-766. - ISSN 0021-3640, DOI 10.1134/S0021364008230136
Примечания : Cited References: 19. - We are grateful to V.V. Rudenko for the samples provided for this study and to I.S. Edelman for discussions of the results. This work was supported by the Russian Foundation for Basic Research (project nos. 07-02-00490a, 08-02-00897a, and 08-02-90708mob_st); by the Council of the President of the Russian Federation for Support of Young Scientists and Leading Scientific Schools (project no. MK-4278.2008.2); and by the Division of Physical Sciences, Russian Academy of Sciences (program "Strongly Correlated Electrons").
Предметные рубрики: FEBO3
Ключевые слова (''Своб.индексиров.''): 74.62.fj--75.50.-y--78.70.en--81.40.rs
Аннотация: Optical absorption spectra of single crystals of the ferromagnetic semiconductor VBO3 are studied at high pressures up to 70 GPa achieved in a diamond-anvil cell. An electronic transition accompanied by sharp changes in the optical parameters and a decrease in the optical gap from E-0 = 3.02 eV to 2.25 eV is found at the pressure P-C = 30 GPa. The gap does not disappear in the high-pressure phase and its value becomes typical of semiconductors. This is indicative of a semiconductor-semiconductor transition. The transition to the metallic state may occur at the critical pressure P-met similar to 290 GPa.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ovchinnikov S. G.
Заглавие : Effect of spin crossovers on the Mott-Hubbard transition at high pressures
Коллективы :
Место публикации : J. Exp. Theor. Phys.: Maik Nauka/Interperiodica/Springer, 2008. - Vol. 107, Is. 1. - P140-146. - ISSN 1063-7761, DOI 10.1134/S1063776108070145
Примечания : Cited References: 19. - The author is grateful to D. Homsky, G. Sawatzky, and M. Haverkort for fruitful discussions of results. This study was supported by the Russdian Foundation for Basic Research ( project no. 07-02-00226) and the Presidium of the Russian Academy of Sciences ( Program "Quantum Macrophysics"). This study was initiated during the author's work at the Kavli Institute for Theoretical Physics (University of California, Santa Barbara, USA) and supported by the NSF ( grant no. PHY05-51164).
Предметные рубрики: NARROW ENERGY BANDS
ELECTRONIC-STRUCTURE
MAGNETIC COLLAPSE
METAL COMPOUNDS
FEBO3
SPECTRA
GAPS
Ключевые слова (''Своб.индексиров.''): high pressures--mott hubbard transitions--spin crossovers--spin dynamics
Аннотация: The effect of spin crossovers in d (n) terms on the effective Hubbardparameter (U(eff)) determining the gap between the lower and upper Hubbard bands is analyzed using a many-electron approach to describe the electron structure of Mott insulators. A new mechanism of the insulator-metal transition is established for d(5) ions, which is related to a decrease in U(eff) caused by spin crossover. For other ions, the U (eff) value is either independent of pressure (d(2), d(4), d(7)) or it exhibits nonmonotonic growth (d(3), d(6), d(8)).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chzhan A. V.
Заглавие : Formation of inhomogeneous magnetic structures in weak ferromagnets with rhombohedral symmetry
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 50, Is. 6. - P1110-1113. - ISSN 1063-7834, DOI 10.1134/S1063783408060188
Примечания : Cited References: 8
Предметные рубрики: FEBO3
Аннотация: A model of formation of inhomogeneous magnetic structures in weak ferromagnets with rhombohedral symmetry is proposed. This model is based on the general theory of ferromagnetism in these compounds. The quantitative calculations of the dependence of the period of magnetic inhomogeneities on the parameters of the samples are presented and compared with experimental data.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ovchinnikov S. G.
Заглавие : The mechanism of the electronic transition in ferroborates under high pressure
Место публикации : J. Phys.: Condens. Matter: IOP PUBLISHING LTD, 2005. - Vol. 17: 2nd International Symposium on Physics of Solids Under High Pressure Using Nuclear Probes (JUL 20-24, 2004, Cologne, GERMANY), Is. 11. - P.S743-S751. - ISSN 0953-8984, DOI 10.1088/0953-8984/17/11/003
Примечания : Cited References: 20
Предметные рубрики: STRUCTURAL PHASE-TRANSITION
MAGNETIC COLLAPSE
OPTICAL-SPECTRA
BAND-STRUCTURE
FEBO3
MODEL
Ключевые слова (''Своб.индексиров.''): carrier concentration--correlation methods--electron transitions--high pressure effects--magnetic moments--mathematical models--metal insulator transition--crystal field--electron correlations--electronic transition--ferroborates--ferromagnetic materials
Аннотация: A novel mechanism for the insulator-semiconductor transition and magnetic collapse in FeBO3 is proposed in the framework of the multielectron model with account taken of strong electron correlations. The electronic transition results from the crossover of the high spin and low spin Fe3+ states induced by the crystal field increasing with pressure. In the high pressure phase a semiconductor-metal transition is expected.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zabluda V. N., Ovchinnikov S. G., Potseluliko A. M., Kharlamova S. A.
Заглавие : Optical properties and electronic structure of rare-earth ferroborates
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2005. - Vol. 47, Is. 3. - P489-494. - ISSN 1063-7834, DOI 10.1134/1.1884710
Примечания : Cited References: 19. - This work was supported by the Russian Foundation for Basic Research (project no. 03-02-16268) and the program of the Department of Physical Sciences of the Russian Academy of Sciences "Strongly Correlated Electrons"
Предметные рубрики: TRIGONAL GDFE3(BO3)(4)
MAGNETIC-PROPERTIES
BAND-STRUCTURE
FEBO3
ABSORPTION
Аннотация: The optical absorption spectra of single-crystal ferroborate GdFe3(BO3)(4) and GdFe2.1Ga0.9(BO3)(4) are measured and interpreted. It is found that the absorption edge and the absorption bands A, B, and C observed below the edge are close to those for FeBO3. A many-electron model of the band structure of GdFe3(BO3)(4) is suggested including strong electron correlations between the iron d states. It is shown that GdFe3(BO3)(4) has a charge-transfer dielectric gap. A rise in pressure is predicted to result in a crossover between the high-spin and low-spin states of the Fe ion, collapse of the magnetic moment, a weakening of Coulomb correlations, an abrupt reduction in the energy gap, and an insulator-semiconductor transition. (c) 2005 Pleiades Publishing, Inc.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavriliuk A. G., Kharlamova S. A., Lyubutin I. S., Troyan I. A., Ovchinnikov S. G., Potseluiko A. M., Eremets M. I., Boehler R.
Заглавие : Structural and electronic transitions in gadolinium iron borate GdFe3(BO3)(4) at high pressures
Место публикации : JETP Letters. - 2004. - Vol. 80, Is. 6. - P.426-432. - ISSN 0021-3640, DOI 10.1134/1.1830662
Примечания : Cited References: 20
Предметные рубрики: TRIGONAL GDFE3(BO3)(4)
RM(3)(BO3)(4) CRYSTALS
OPTICAL-SPECTRA
BAND-STRUCTURE
FEBO3
GROWTH
Аннотация: The optical properties and structure of gadolinium iron borate GdFe3(BO3)(4) crystals are studied at high pressures produced in diamond-anvil cells. X-ray diffraction data obtained at a pressure of 25.6 GPa reveal a first-order phase transition retaining the trigonal symmetry and increasing the unit cell volume by 8%. The equation of state is obtained and the compressibility of the crystal is estimated before and after the phase transition. The optical spectra reveal two electronic transitions at pressures similar to26 GPa and similar to43 GPa. Upon the first transition, the optical gap decreases jumpwise from 3.1 to similar to2.25 eV. Upon the second transition at P = 43 GPa, the optical gap deceases down to similar to0.7 eV, demonstrating a dielectric-semiconductor transition. By using the theoretical model developed for a FeBO3 crystal and taking into account some structural analogs of these materials, the anomalies of the high-pressure optical spectra are explained. (C) 2004 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ivanova N. B., Kazak N. V., Markov V. V., Ovchinnikov S. G., Rudenko V. V., Abd-Elmeguid M. M.
Заглавие : Analysis of the electrical and optical properties of VBO3 single crystals and Fe1-xVxBO3 solid solutions on the basis of a many-electron model of energy band structure
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2004. - Vol. 46, Is. 8. - P1462-1468. - ISSN 1063-7834, DOI 10.1134/1.1788779
Примечания : Cited References: 32. - One of the authors (M.M.A.) would like to thank the Deutsche Forschungsgemeinschaft (SFB608) for financial support. This study was supported by the Russian Foundation for Basic Research (project no. 03-02-16286), the program "Integration" (project no. B0017), and the program of the Division of Physical Sciences of the Russian Academy of Sciences "Strongly Correlated Electrons"
Предметные рубрики: MAGNETIC-PROPERTIES
CALCITE STRUCTURE
PHASE-TRANSITION
FERRIC BORATE
HIGH-PRESSURE
FEBO3
FE1-XCRXBO3
FERROMAGNET
MOSSBAUER
SPECTRA
Аннотация: A many-electron model of the energy band structure of VBO3 and of Fe1 - xVxBO3 solid solutions is proposed with strong electron correlations taken into account. Experimental optical absorption spectra and data on the resistivity are discussed in the framework of the suggested model. Variation in the magnetic and electronic properties of VBO3 and Fe1 - xVxBO3 under high pressure is predicted. For VBO3, a Mott-Hubbard (insulator-metal) transition is expected in the high-pressure phase. In Fe1 - xVxBO3 solid solutions, a nontrivial variation in the properties is predicted, leading to the appearance of a different magnetic state. (C) 2004 MAIK "Nauka / Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev A. D., Bayukov O. A., Vasil'ev A. D., Velikanov D. A., Ivanova N. B., Kazak N. V., Ovchinnikov S. G., Abd-Elmeguid M. M., Rudenko V. V.
Заглавие : Magnetic and electrical properties of Fe1.91V0.09BO4 warwickite
Разночтения заглавия :авие SCOPUS: Magnetic and electrical properties of Fe1.91V 0.09BO4 warwickite
Место публикации : J. Exp. Theor. Phys.: AMER INST PHYSICS, 2003. - Vol. 97, Is. 5. - P989-995. - ISSN 1063-7761, DOI 10.1134/1.1633954
Примечания : Cited References: 22. - This study was supported in part by the Russian Foundation for Basic Research (project no. 03-02-16286) and by the Federal Program “Integration” (project no. B0017)
Предметные рубрики: ELECTRONIC-STRUCTURE
CRYSTAL-STRUCTURE
FE2OBO3
CHAINS
FE2BO4
FEBO3
Ключевые слова (''Своб.индексиров.''): electric conductivity--magnetic variables measurement--magnetization--single crystals--hopping conductivity--warwickite--iron compounds
Аннотация: We have performed a complex investigation of the structure and the magnetic and electrical properties of a warwickite single crystal with the composition Fe1.91V0.09BO4 . The results of Mossbauer measurements at T = 300 K indicate that there exist "localized" (Fe2+, Fe3+) and "delocalized" (Fe2.5+) states distributed over two crystallographically nonequivalent positions. The results of magnetic measurements show that warwickite is a P-type ferrimagnet below T = 130 K. The material exhibits hopping conductivity involving strongly interacting electrons. The experimental data are analyzed in comparison to the properties of the initial (unsubstituted) Fe2BO4 warwickite. The entire body of data on the electric conductivity and magnetization are interpreted on a qualitative basis. (C) 2003 MAIK "Nauka / Interperiodica".
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Lyubutin I. S., Gavriliuk A. G., Struzhkin V. V., Ovchinnikov S. G., Kharlamova S. A., Bezmaternykh L. N., Hu M., Chow P.
Заглавие : Pressure-induced electron spin transition in the paramagnetic phase of the GdFe3(BO3)(4) Heisenberg magnet
Разночтения заглавия :авие SCOPUS: Pressure-induced electron spin transition in the paramagnetic phase of the GdFe3(BO3)4 Heisenberg magnet
Место публикации : JETP Letters. - 2006. - Vol. 84, Is. 9. - P.518-523. - ISSN 0021-3640, DOI 10.1134/S0021364006210119
Примечания : Cited References: 26
Предметные рубрики: TRIGONAL GDFE3(BO3)(4)
NUCLEAR
FEBO3
STATE
SCATTERING
COLLAPSE
Аннотация: The HS - LS spin crossover effect (high-spin - low-spin transition) induced by high pressure in the range 45-53 GPa is observed in trivalent Fe3+ ions in the paramagnetic phase of a (GdFe3)-Fe-57(BO3)(4) gadolinium iron borate crystal. This effect is studied in high-pressure diamond-anvil cells by two experimental methods using synchrotron radiation: nuclear resonant forward scattering (NFS) and Fe K-beta high-resolution x-ray emission spectroscopy (YES). The manifestation of the crossover in the paramagnetic phase, which has no order parameter to distinguish between the HS and LS states, correlates with the optical-gap jump and with the insulator-semiconductor transition in the crystal. Based on a theoretical many-electron model, an explanation of this effect at high pressures is proposed.
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