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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Bondarenko G. N., Mikhlin Y. L., Patrin G. S., Velikanov D. A.
Заглавие : Solid-state formation of ferromagnetic δ-Mn0.6Ga0.4 thin films with high rotatable uniaxial anisotropy
Место публикации : Phys. Status Solidi B: Wiley-VCH Verlag GMBH, 2012. - Vol. 249, Is. 8. - P.1541-1545. - ISSN 0370-1972, DOI 10.1002/pssb.201248064
Примечания : Cited References: 39
Предметные рубрики: EPITAXIAL-GROWTH
PERPENDICULAR ANISOTROPY
MAGNETIC-PROPERTIES
PHASE-FORMATION
GAAS
GAN
Ключевые слова (''Своб.индексиров.''): high anisotropy constants--mnxga1-x alloys--rotatable magnetic anisotropies--thin films
Аннотация: Solid-state reactions in Ga/Mn polycrystalline films of the composition 1 Ga:3 Mn were experimentally investigated. Our X-ray study showed that the formation of the Ga/Mn → (250 °C) ϕ-Ga7.7Mn2.3 → (350 °C) δ-Mn0.6Ga0.4 phase sequence occurs when the annealing temperature is increased to 400 °C. δ-Mn0.6Ga0.4 samples were found to have high rotatable uniaxial anisotropy. We also showed that magnetic fields with coercivities above H HC = 8.3 kOe can be used to orient the easy anisotropy axis in any spatial direction while taking the angle of the lag into account.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Alekseev K. N., Erementchouk M. V., Kusmartsev F. V.
Заглавие : Direct-current generation due to wave mixing in semiconductors
Место публикации : Europhys. Lett. - 1999. - Vol. 47, Is. 5. - P.595-600. - ISSN 0295-5075, DOI 10.1209/epl/i1999-00430-0
Примечания : Cited References: 34
Предметные рубрики: BLOCH OSCILLATOR
SUPERLATTICES
PHOTOCURRENT
TRANSPORT
FREQUENCY
FIELD
RECTIFIERS
EMISSION
CHAOS
GAAS
Аннотация: We describe an effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow-gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kobyakov A. V., Turpanov I. A., Patrin G. S., Rudenko R. Yu., Yushkov V. I., Kosyrev N. N.
Заглавие : Structural and Magnetic Properties of the Al2O3/Ge-p/Al2O3/Co System
Коллективы : Russian Foundation for Basic Research [18-02-00161-a]
Место публикации : Tech. Phys. - 2019. - Vol. 64, Is. 2. - P.236-241. - ISSN 1063-7842, DOI 10.1134/S1063784219020087. - ISSN 1090-6525(eISSN)
Примечания : Cited References: 18. - This study was supported by the Russian Foundation for Basic Research, project no. 18-02-00161-a.
Предметные рубрики: LAYER-DEPOSITED AL2O3
MAGNETORESISTANCE
GAAS
Аннотация: The Al2O3/Ge-p/Al2O3/Co system with an Al2O3 buffer layer deposited by ion-plasma sputtering has been experimentally investigated. The dependences of the magnetic properties of cobalt on the rate of its deposition by ion-plasma sputtering and rate of deposition of preceding layers have been established. It is shown that the technique used to obtain buffer layers can significantly reduce the surface roughness of the next layers. The obtained buffer layers can be used as artificial substrates for growing heterostructures with tunnel junctions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bhagat, Babli, Semisalova, Anna, Meckenstock, Ralf, Farle M.
Заглавие : Reversal of uniaxial magnetic anisotropy in Fe/GaAs (110) films driven by surface relaxation: An in situ ferromagnetic resonance study
Коллективы : Deutsche Forschungsgemeinschaft (DFG, German Research Foundation)German Research Foundation (DFG) [RO 5030/2-1, 405553726-TRR 270]; Government of the Russian Federation [075-15-2019-1886]
Место публикации : AIP Adv. - 2020. - Vol. 10, Is. 7. - Ст.075219. - ISSN 2158-3226(eISSN), DOI 10.1063/5.0004261
Примечания : Cited References: 32. - This work was supported by Deutsche Forschungsgemeinschaft (DFG, German Research Foundation): Project Nos. RO 5030/2-1 and 405553726-TRR 270, and by the Government of the Russian Federation (Research Grant No. 075-15-2019-1886). The authors acknowledge Florian Romer for initial funding and training and are thankful to Benjamin Zingsem for helping in data fitting and to Ulf Wiedwald for AFM measurements.
Предметные рубрики: EPITAXIAL FE FILMS
GAAS(001)
GAAS
RECONSTRUCTION
LAYERS
Аннотация: We report an in situ study of the time evolution of magnetic anisotropy constants of an uncapped 4 nm [~ 27 monolayers (ML)] Fe film epitaxially grown on a GaAs (110) substrate at room temperature under ultra-high vacuum (UHV) conditions. The structural and chemical properties are monitored by low energy electron diffraction and Auger spectroscopy with a sensitivity of 0.01 ML. The in situ UHV ferromagnetic resonance (FMR) study over a period of 6 days in 10-9 Pa reveals that there is a slow magneto-morphological transition of the Fe film surface at room temperature. The resonance field measured in situ in the [110] direction initially changes at a rate of 0.3 mT/h within 30 h after deposition and later at 0.1 mT/h over 80 h. We determine the time-dependent changes in the in-plane and out-of-plane anisotropy constants and find a sign change in the uniaxial in-plane anisotropy in the first 24 h due to morphological changes at the surface. The in situ FMR measurements and the Auger analysis allow us to exclude changes in the magnetization and anisotropy due to the contamination and oxidation of the Fe film.
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