Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

в найденном

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>S=Magnetoresistance<.>)

Общее количество найденных документов : 24
Показаны документы с 1 по 10

1-10 11-20 21-24

Magnetotransport effects and electronic phase separation in manganese sulfides with electron-hole doping / O. B. Romanova, S. S. Aplesnin, M. N. Sitnikov, L. V. Udod // J. Exp. Theor. Phys. - 2021. - Vol. 132, Is. 5. - P. 831-842, DOI 10.1134/S106377612103016X. - Cited References: 38. - This study was supported by the Russian Foundation for Basic Research and the Belarussian Republic Foundation for Basic Research (project no. 20-52-00005) . - ISSN 1063-7761. - ISSN 1090-6509

РУБ Physics, Multidisciplinary
Рубрики:
MAGNETIC-PROPERTIES
TRANSITION
MAGNETORESISTANCE
Аннотация: We analyze the effect of electron and hole doping with a low substituent concentration (x = 0.01) on the magnetic and electron subsystems in disordered semiconductors MexMn1-xS (Me = Ag and Tm) in a wide range of temperatures (77–1000 K) and magnetic fields up to 12 kOe. Using magnetic measurements, we have established the domains of ferron (polaron) formation in the vicinity of the magnetic phase transition. We have detected the magnetoimpedance and magnetoresistance, the magnitude and sign of which depend on the electric field, temperature, and the type of the substituent element. We have determined the temperatures of thermopower peaks associated with deformation of the crystalline structure. We have established the phonon and magnon contributions to charge carrier relaxation using the method of impedance spectroscopy and the Jahn–Teller mode of oscillations from the IR spectra for the system containing silver. We have determined the diffusion contribution to the conductivity from the impedance hodograph in TmxMn1-xS semiconductors. The experimental results are described using the models of supermagnetic clusters, ferroelectric domains, and the Debye model.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Публикация на русском языке Магнитотранспортные эффекты и электронное фазовое расслоение в сульфидах марганца с электронно-дырочным допированием [Текст] / О. Б. Романова, С. С. Аплеснин, М. Н. Ситников, Л. В. Удод // Журн. эксперим. и теор. физ. - 2021. - Т. 159 Вып. 5. - С. 938-951

Держатели документа:
Russian Acad Sci, Siberian Branch, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Reshetnev Siberian State Univ Sci & Technol, Krasnoyarsk 660037, Russia.

Доп.точки доступа:
Romanova, O. B.; Романова, Оксана Борисовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Udod, L. V.; Удод, Любовь Викторовна; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Belarussian Republic Foundation for Basic Research [20-52-00005]
}
Найти похожие

Spin Wave Resonance in the [(Co0.88Fe0.12)/Cu]N Synthetic Antiferromagnet / I. G. Vazhenina, R. S. Iskhakov, M. A. Milyaev [et al.] // Tech. Phys. Lett. - 2020. - Vol. 46, Is. 11. - P. 1076-1079, DOI 10.1134/S1063785020110140. - Cited References: 19. - This study was carried out under a state order of the Ministry of Science and Higher Education of the Russian Federation (theme "Spin" no. AAAA-A18-118020290104-2) and supported in part by the Russian Foundation for Basic Research (project no. 20-42-660018) . - ISSN 1063-7850. - ISSN 1090-6533

РУБ Physics, Applied
Рубрики:
MAGNETIC-PROPERTIES
   MAGNETORESISTANCE
   SPECTRUM
   FILMS
Кл.слова (ненормированные):
spin wave resonance -- synthetic antiferromagnet -- exchange coupling constant
Аннотация: The [(Co0.88Fe0.12)/Cu]N synthetic antiferromagnet has been investigated by the spin wave resonance method over the entire range of angles of an external dc magnetic field to the film surface normal. The investigations have shown that the superlattice under study consists of two exchange-coupled magnetic subsystems, each manifested in the recorded spectra as a series of spin-wave modes. The dependence of the linear region of propagation of a standing spin-wave mode on the sample orientation in an external magnetic field has been established.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Публикация на русском языке Спин-волновой резонанс в синтетическом антиферромагнетике [(Co0.88Fe0.12)/Cu]N [Текст] / И. Г. Важенина, Р. С. Исхаков, М. А. Миляев [и др.] // Письма в Журн. техн. физ. - 2020. - T. 46 Вып. 21. - С. 28-31

Держатели документа:
Russian Acad Sci, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.
Russian Acad Sci, Ural Branch, MN Mikheev Inst Met Phys, Ekaterinburg 620108, Russia.

Доп.точки доступа:
Vazhenina, I. G.; Важенина, Ирина Георгиевна; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Milyaev, M. A.; Naumova, L. I.; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Ministry of Science and Higher Education of the Russian Federation [AAAA-A18-118020290104-2]; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [20-42-660018]
}
Найти похожие

    Magnetoelectric effect in CoFeB/MgO/CoFeB magnetic tunnel junctions / I. Y. Pashen'kin, M. V. Sapozhnikov, N. S. Gusev [et al.] // JETP Lett. - 2020. - Vol. 111, Is. 12. - P. 690-693, DOI 10.1134/S0021364020120115. - Cited References: 13 . - ISSN 0021-3640. - ISSN 1090-6487
Рубрики:
SPIN-TRANSFER-TORQUE
   TOGGLE MRAM
   MAGNETORESISTANCE
Аннотация: The possibility of electrical control of the interlayer exchange interaction in CoFeB/MgO/CoFeB tunnel junctions exhibiting magnetoresistance of ~200% is studied. It is shown that the increase in the applied voltage from 50 mV to 1.25 V leads to a shift of the magnetization curve of the free layer by 10 Oe at a current density of ~103 A/cm2. The discovered effect can be used in the development of energy-efficient random access memory.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Публикация на русском языке Магнитоэлектрический эффект в туннельных магниторезистивных контактах CoFeB/MgO/CoFeB [Текст] / И. Ю. Пашенькин, М. В. Сапожников, Н. С. Гусев [и др.] // Письма в ЖЭТФ. - 2020. - Т. 111 Вып. 12. - С. 815-818

Держатели документа:
Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia.
Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Pashen'kin, I. Yu; Sapozhnikov, M., V; Gusev, N. S.; Rogov, V. V.; Tatarskii, D. A.; Fraerman, A. A.; Volochaev, M. N.; Волочаев, Михаил Николаевич
}
Найти похожие

Structural and Magnetic Properties of the Al2O3/Ge-p/Al2O3/Co System / A. V. Kobyakov [et al.] // Tech. Phys. - 2019. - Vol. 64, Is. 2. - P. 236-241, DOI 10.1134/S1063784219020087. - Cited References: 18. - This study was supported by the Russian Foundation for Basic Research, project no. 18-02-00161-a. . - ISSN 1063-7842. - ISSN 1090-6525

РУБ Physics, Applied
Рубрики:
LAYER-DEPOSITED AL2O3
MAGNETORESISTANCE
GAAS
Аннотация: The Al2O3/Ge-p/Al2O3/Co system with an Al2O3 buffer layer deposited by ion-plasma sputtering has been experimentally investigated. The dependences of the magnetic properties of cobalt on the rate of its deposition by ion-plasma sputtering and rate of deposition of preceding layers have been established. It is shown that the technique used to obtain buffer layers can significantly reduce the surface roughness of the next layers. The obtained buffer layers can be used as artificial substrates for growing heterostructures with tunnel junctions.

Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ

Публикация на русском языке Структурные и магнитные свойства систем Al2O3/Ge-p/Al2O3/Co [Текст] / А. В. Кобяков [и др.] // Журн. техн. физ. - 2019. - Т. 89 Вып. 2. - С. 268-273

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Fed Res Ctr, Krasnoyarsk Sci Ctr,Siberian Branch, Krasnoyarsk 660036, Russia.
Krasnoyarsk State Agrarian Univ, Achinsk Branch, Krasnoyarsk 662150, Krasnoyarsk Kra, Russia.

Доп.точки доступа:
Kobyakov, A. V.; Кобяков, Александр Васильевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Rudenko, R. Yu.; Руденко, Роман Юрьевич; Yushkov, V. I.; Юшков, Василий Иванович; Kosyrev, N. N.; Косырев, Николай Николаевич; Russian Foundation for Basic Research [18-02-00161-a]
}
Найти похожие

Magnetic properties, morphology and interfaces of (Fe/Si)n nanostructures / Bartolome J. [et al.] // J. Magn. Magn. Mater. - 2016. - Vol. 400. - P. 271-275, DOI 10.1016/j.jmmm.2015.07.046. - Cited References: 43. - The financial support of the Spanish MINECOMAT2011-23791 and MAT2015-53921-R, Aragonese DGA-IMANAE34 (cofounded by Fondo Social Europeo) and European FEDER funds is acknowledged. Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 2886.2014.2), RFBR (Grant no. 13-02-01265), the Ministry of Education and Science of the Russian Federation (State contract no. 02.G25.31.0043 and State task no. 16.663.2014К) . - ISSN 0304-8853

РУБ Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
INTERLAYER EXCHANGE
   Fe/Si(100) INTERFACE
   SILICIDE FORMATION
   ULTRAHIGH-VACUUM
   FILMS
   IRON
   MAGNETORESISTANCE
   SUPERLATTICES
   SPECTROSCOPY
   DEPOSITION
Аннотация: A systematic study of the iron–silicon interfaces formed upon preparation of (Fe/Si) multilayers has been performed by the combination of modern and powerful techniques. Samples were prepared by molecular beam epitaxy under ultrahigh vacuum onto Si wafers or single crystalline Ag(100) buffer layers grown on GaAs(100). The morphology of these films and their interfaces was studied by a combination of scanning transmission electron microscopy, X-ray reflectivity, angle resolved X-ray photoelectron spectroscopy and hard X-ray photoelectron spectroscopy. The Si-on-Fe interface thickness and roughness were determined to be 1.4(1) nm and 0.6(1) nm, respectively. Moreover, determination of the stable phases formed at both Fe-on-Si and Si-on-Fe interfaces was performed using conversion electron Mössbauer spectroscopy on multilayers with well separated Si-on-Fe and Fe-on-Si interfaces. It is shown that while a fraction of Fe remains as α-Fe, the rest has reacted with Si, forming the paramagnetic FeSi phase and a ferromagnetic Fe rich silicide. We conclude that there is an identical paramagnetic c-Fe1−xSi silicide sublayer in both Si-on-Fe and Fe-on-Si interfaces, whereas an asymmetry is revealed in the composition of the ferromagnetic silicide sublayer.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ

Доп.точки доступа:
Bartolome, J.; Badía-Romano, L.; Rubin J.; Bartolome F.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Burgler D.E.; International Conference on Magnetism(20 ; 2015 ; Jul ; 5-10 ; Barselona, Spain)
Свободных экз. нет}
Найти похожие

    Room temperature magneto-transport properties of nanocomposite Fe–In2O3 thin films / I. A. Tambasov [et al.] // Physica B. - 2015. - Vol. 478. - P. 135-137, DOI 10.1016/j.physb.2015.08.054. - Cited References: 28. - This study was supported by the Russian Foundation for Basic Research (Grants # 15-02-00948-A,), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the program of Foundation for Promotion of Small Enterprises in Science and Technology (No 6662 FY2015) ("UMNIK" program). . - ISSN 0921-4526
   Перевод заглавия: Магнитно-транспортные свойства композитных Fe –In2O3 тонких пленок при комнатной температуре

РУБ Physics, Condensed Matter
Рубрики:
Doped In2O3 Films
   High-performance
   Indium oxide
   Transistors
   Magnetoresistance
   Ferromagnetism
Кл.слова (ненормированные):
Indium oxide -- Fe-In2O3 thin films -- Weak localization -- Disordered semiconductors
Аннотация: A ferromagnetic Fe–In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe–In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe–In2O3 thin film had n=1.94·1020 cm−3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~−0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok 50, Krasnoyarsk, Russian Federation
Reshetnev Siberian State Aerospace University, Krasnoyarsk Worker 31, Krasnoyarsk, Russian Federation
Siberian Federal University, Svobodny prospect 79, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Tambasov, I. A.; Тамбасов, Игорь Анатольевич; Gornakov, K. O.; Myagkov, V. G.; Мягков, Виктор Григорьевич; Bykova, L. E.; Быкова, Людмила Евгеньевна; Zhigalov, V. S.; Жигалов, Виктор Степанович; Matsynin, A. A.; Мацынин, Алексей Александрович; Yozhikova, E. V.
}
Найти похожие

Dielectric and electrical properties of polymorphic bismuth pyrostannate Bi2Sn2O7 / L. V. Udod [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 7. - P. 1315-1319, DOI 10.1134/S1063783414070336. - Cited References: 20. - This study was supported by the Russian Foundation for Basic Research (project nos. 09-02-00125-a, 14-02-92003 NNS_a, 14-02-90010_Bel_a, and 14-12-00124). . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
STRONG MAGNETIC-FIELD
   DOPED MANGANITES
   MAGNETORESISTANCE
   Bi2O3
Аннотация: The Bi2Sn2O7 compound existing simultaneously in two polymorphic modifications, namely, orthorhombic and cubic, has been synthesized for the first time by solid-phase synthesis. The dielectric and electrical properties of the compound have been studied in the temperature range 100 K ˂ T ˂ 500 K. Anomalies in the temperature dependences of the electrical resistivity and the permittivity (imaginary and real parts) have been found at both low and high temperatures. These features are explained in terms of the model of martensitic phase transitions.

Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ

Публикация на русском языке Диэлектрические и электрические свойства полиморфного пиростаната висмута Bi2Sn2O7 [Текст] / Л. В. Удод [и др.] // Физ. тверд. тела : ФТИ РАН, 2014. - Т. 56 Вып. 7. - С. 1267-1271

Держатели документа:
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Udod, L. V.; Удод, Любовь Викторовна; Aplesnin, S. S.; Аплеснин, Сергей Степанович; Sitnikov, M. N.; Molokeev, M. S.; Молокеев, Максим Сергеевич; Russian Foundation for Basic Research [09-02-00125-a, 14-02-92003 NNS_a, 14-02-90010_Bel_a, 14-12-00124]
}
Найти похожие

Kolovsky, A. R.
Hall conductivity beyond the linear response regime / A. R. Kolovsky // Europhys. Lett. - 2011. - Vol. 96, Is. 5. - Ст. 50002, DOI 10.1209/0295-5075/96/50002. - Cited References: 24. - This work was supported by Russian Foundation for Basic Research, grant RFBR-10-02-00171-a. . - ISSN 0295-5075

РУБ Physics, Multidisciplinary
Рубрики:
MAGNETIC-FIELDS
   ANTIDOT ARRAYS
   NEUTRAL ATOMS
   SUPERLATTICES
   MAGNETORESISTANCE
   TRANSPORT
   ELECTRONS
Аннотация: This paper introduces a semi-analytical method for calculating the Hall conductivity in the single-band approximation. The method goes beyond the linear response theory and thus, it formally imposes no limitation on the electric-field magnitude. It is shown that, when the Bloch frequency exceeds the cyclotron frequency, the Hall current decreases with increasing electric field. The obtained results can be directly applied to the cold Bose atoms in a 2D optical lattice, where the single-band approximation is well justified. Copyright (C) EPLA, 2011

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
[Kolovsky, A. R.] LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
[Kolovsky, A. R.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
Kirensky Institute of Physics, 660036 Krasnoyarsk, Russian Federation
Siberian Federal University, 660041 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Коловский, Андрей Радиевич
}
Найти похожие

Magnetic and electrical properties of cation-substituted sulfides Me (x) Mn1-x S (Me = Co, Gd) / S. S. Aplesnin [et al.] // Phys. Solid State. - 2009. - Vol. 51, Is. 4. - P. 698-701, DOI 10.1134/S1063783409040076. - Cited References: 17. - This study was supported by the Russian Foundation for Basic Research RFFI-BRFFI (project no. 0802-90031) and FFIRB (project no. F08R-037). . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
ALPHA-MNS
MAGNETORESISTANCE
TRANSPORT
Аннотация: The temperature dependences of the specific magnetization sigma and the electrical resistivity rho of Me (x) Mn1 - x S single crystals (Me= Co, Gd; x= 0.05) have been studied in the temperature range 80 K T 1000 K. The samples under study have revealed the presence of a spontaneous magnetic moment below the N,el temperature (T (N)) and ferromagnetic clusters in Gd0.05Mn0.95S in the temperature range 146 K T 680 K. Substitution of gadolinium for manganese initiates a transition from p-type to n-type conduction. The change in the conduction type is accompanied by an increase in the electrical resistivity at 300 K by approximately one order of magnitude and, accordingly, by a decrease in the activation energy. The magnetic and electrical properties of the crystals under study have been interpreted in terms of the cluster model with temperature-dependent ferromagnetic exchange and an electron localized in this cluster.

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
[Aplesnin, S. S.
Ryabinkina, L. I.
Romanova, O. B.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Sokolov, V. V.
Pichugin, A. Yu.] Russian Acad Sci, Siberian Branch, Inst Inorgan Chem, Novosibirsk 630090, Russia
[Galyas, A. I.
Demidenko, O. F.
Makovetskii, G. I.
Yanushkevich, K. I.] Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 220072, Byelarus
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Akademgorodok 50, Krasnoyarsk 660036, Russian Federation
Reshetnev Siberian State Aerospace University, pr. im. Gazety Krasnoyarski rabochi 31, Krasnoyarsk 660014, Russian Federation
Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, ul. Akademika Lavrent'eva 3, Novosibirsk 630090, Russian Federation
Scientific-Practical Materials Research Centre, National Academy of Sciences of Belarus, ul. P. Brovki 19, Minsk 220072, Belarus

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Ryabinkina, L. I.; Рябинкина, Людмила Ивановна; Romanova, O. B.; Романова, Оксана Борисовна; Sokolov, V. V.; Pichugin, A. Y.; Galyas, A. I.; Demidenko, O. F.; Makovetskii, G. I.; Yanushkevich, K. I.; Russian Foundation for Basic Research RFFI-BRFFI [0802-90031]; FFIRB [F08R-037]
}
Найти похожие

10.

Relaxation of the remanent resistance of granular HTSC Y-Ba-Cu-O plus CuO composites after magnetic field treatment / D. A. Balaev [et al.] // Phys. Solid State. - 2008. - Vol. 50, Is. 6. - P. 1014-1021, DOI 10.1134/S1063783408060036. - Cited References: 24 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
HIGH-TEMPERATURE SUPERCONDUCTOR
   TRANSPORT CURRENT
   FLUX CREEP
   YBA2CU3O7-DELTA
   MAGNETORESISTANCE
   PENETRATION
Аннотация: The hysteresis of magnetoresistance R(H) and relaxation of the remanent resistance R-rem with time after magnetic field treatment of HTSC (Y-Ba-Cu-O) + CuO composites are studied. Such a composite constitutes a network of Josephson junctions wherein the nonsuperconducting component (CuO) forms Josephson barriers between HTSC grains. By comparing the experimental R-rem(t) and R(H) dependences, it is shown that the relaxation of the remanent resistance is caused by the decreased magnetic field in the intergrain medium due to relaxation of magnetization. The reason is uncovered for the differences between the published values of pinning potentials determined by measuring the relaxation of magnetization or resistance and fitting them by the Anderson law.

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
[Balaev, D. A.
Dubrovskii, A. A.
Popkov, S. I.
Shaikhutdinov, K. A.
Petrov, M. I.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Dubrovskii, A. A.; Дубровский, Андрей Александрович; Popkov, S. I.; Попков, Сергей Иванович; Shaikhutdinov, K. A.; Шайхутдинов, Кирилл Александрович; Petrov, M. I.; Петров, Михаил Иванович
}
Найти похожие