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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Udod L. V., Aplesnin S. S., Sitnikov M. N., Molokeev M. S.
Заглавие : Dielectric and electrical properties of polymorphic bismuth pyrostannate Bi2Sn2O7
Коллективы : Russian Foundation for Basic Research [09-02-00125-a, 14-02-92003 NNS_a, 14-02-90010_Bel_a, 14-12-00124]
Место публикации : Phys. Solid State: MAIK Nauka-Interperiodica / Springer, 2014. - Vol. 56, Is. 7. - P.1315-1319. - ISSN 1063-7834, DOI 10.1134/S1063783414070336. - ISSN 1090-6460
Примечания : Cited References: 20. - This study was supported by the Russian Foundation for Basic Research (project nos. 09-02-00125-a, 14-02-92003 NNS_a, 14-02-90010_Bel_a, and 14-12-00124).
Предметные рубрики: STRONG MAGNETIC-FIELD
DOPED MANGANITES
MAGNETORESISTANCE
Bi2O3
Аннотация: The Bi2Sn2O7 compound existing simultaneously in two polymorphic modifications, namely, orthorhombic and cubic, has been synthesized for the first time by solid-phase synthesis. The dielectric and electrical properties of the compound have been studied in the temperature range 100 K ˂ T ˂ 500 K. Anomalies in the temperature dependences of the electrical resistivity and the permittivity (imaginary and real parts) have been found at both low and high temperatures. These features are explained in terms of the model of martensitic phase transitions.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tambasov I. A., Gornakov K. O., Myagkov V. G., Bykova L. E., Zhigalov V. S., Matsynin A. A., Yozhikova E. V.
Заглавие : Room temperature magneto-transport properties of nanocomposite Fe–In2O3 thin films
Место публикации : Physica B. - 2015. - Vol. 478. - P.135-137. - ISSN 0921-4526, DOI 10.1016/j.physb.2015.08.054
Примечания : Cited References: 28. - This study was supported by the Russian Foundation for Basic Research (Grants # 15-02-00948-A,), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the program of Foundation for Promotion of Small Enterprises in Science and Technology (No 6662 FY2015) ("UMNIK" program).
Предметные рубрики: Doped In2O3 Films
High-performance
Indium oxide
Transistors
Magnetoresistance
Ferromagnetism
Ключевые слова (''Своб.индексиров.''): indium oxide--fe-in2o3 thin films--weak localization--disordered semiconductors
Аннотация: A ferromagnetic Fe–In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3+In→Fe–In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe–In2O3 thin film had n=1.94·1020 cm−3, μ=6.45 cm2/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was ~−0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bartolome J., Badía-Romano L., Rubin J., Bartolome F., Varnakov S. N., Ovchinnikov S. G., Burgler D.E.
Заглавие : Magnetic properties, morphology and interfaces of (Fe/Si)n nanostructures
Коллективы : International Conference on Magnetism
Место публикации : J. Magn. Magn. Mater.: Elsevier, 2016. - Vol. 400. - P.271-275. - ISSN 03048853 (ISSN), DOI 10.1016/j.jmmm.2015.07.046
Примечания : Cited References: 43. - The financial support of the Spanish MINECOMAT2011-23791 and MAT2015-53921-R, Aragonese DGA-IMANAE34 (cofounded by Fondo Social Europeo) and European FEDER funds is acknowledged. Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 2886.2014.2), RFBR (Grant no. 13-02-01265), the Ministry of Education and Science of the Russian Federation (State contract no. 02.G25.31.0043 and State task no. 16.663.2014К)
Предметные рубрики: INTERLAYER EXCHANGE
Fe/Si(100) INTERFACE
SILICIDE FORMATION
ULTRAHIGH-VACUUM
FILMS
IRON
MAGNETORESISTANCE
SUPERLATTICES
SPECTROSCOPY
DEPOSITION
Аннотация: A systematic study of the iron–silicon interfaces formed upon preparation of (Fe/Si) multilayers has been performed by the combination of modern and powerful techniques. Samples were prepared by molecular beam epitaxy under ultrahigh vacuum onto Si wafers or single crystalline Ag(100) buffer layers grown on GaAs(100). The morphology of these films and their interfaces was studied by a combination of scanning transmission electron microscopy, X-ray reflectivity, angle resolved X-ray photoelectron spectroscopy and hard X-ray photoelectron spectroscopy. The Si-on-Fe interface thickness and roughness were determined to be 1.4(1) nm and 0.6(1) nm, respectively. Moreover, determination of the stable phases formed at both Fe-on-Si and Si-on-Fe interfaces was performed using conversion electron Mössbauer spectroscopy on multilayers with well separated Si-on-Fe and Fe-on-Si interfaces. It is shown that while a fraction of Fe remains as α-Fe, the rest has reacted with Si, forming the paramagnetic FeSi phase and a ferromagnetic Fe rich silicide. We conclude that there is an identical paramagnetic c-Fe1−xSi silicide sublayer in both Si-on-Fe and Fe-on-Si interfaces, whereas an asymmetry is revealed in the composition of the ferromagnetic silicide sublayer.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kolovsky A. R.
Заглавие : Hall conductivity beyond the linear response regime
Место публикации : Europhys. Lett. - 2011. - Vol. 96, Is. 5. - Ст.50002. - ISSN 0295-5075, DOI 10.1209/0295-5075/96/50002
Примечания : Cited References: 24. - This work was supported by Russian Foundation for Basic Research, grant RFBR-10-02-00171-a.
Предметные рубрики: MAGNETIC-FIELDS
ANTIDOT ARRAYS
NEUTRAL ATOMS
SUPERLATTICES
MAGNETORESISTANCE
TRANSPORT
ELECTRONS
Аннотация: This paper introduces a semi-analytical method for calculating the Hall conductivity in the single-band approximation. The method goes beyond the linear response theory and thus, it formally imposes no limitation on the electric-field magnitude. It is shown that, when the Bloch frequency exceeds the cyclotron frequency, the Hall current decreases with increasing electric field. The obtained results can be directly applied to the cold Bose atoms in a 2D optical lattice, where the single-band approximation is well justified. Copyright (C) EPLA, 2011
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Edelman I. S., Zhigalov V. S., Ivantsov R. D., Seredkin V. A., Zharkov S. M., Prokof'ev D. E., Frolov G. I., Bondarenko G. N.
Заглавие : Structure and the magnetic and magneto-optical properties of Co-Sm-O nanogranular films
Коллективы :
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 50, Is. 11. - P2109-2114. - ISSN 1063-7834, DOI 10.1134/S1063783408110176
Примечания : Cited References: 15. - We would like to thank G. V. Bondarenko for the performance of the x-ray fluorescence measurements of the samples under investigation.This study was supported by the Russian Foundation for Basic Research (project no. 07-02-92174) and performed within the framework of the Program "Development of the Scientific Potential of the Higher School" (project no. 2.1.1.7376). R.D. Ivantsov acknowledges the support of the Russian Science Support Foundation.
Предметные рубрики: FARADAY-ROTATION
GRANULAR FILMS
MAGNETORESISTANCE
CO/SIO2
Ключевые слова (''Своб.индексиров.''): 75--50--tt--75--70---i--78--20--ls
Аннотация: The magnetic properties and magneto-optical effects in nanocomposites based on Co-Sm-O films prepared through pulsed plasma sputtering of a SmCo(5) target are investigated. It is shown that, depending on the technological conditions and regimes of subsequent annealing, the films can have different structures from cobalt nanoparticles distributed in the dielectric samarium oxide matrix with a magnetic phase volume of more than 60% to a continuous polycrystalline cobalt film with embedded samarium oxide nanoparticles. The evolution of the spectra of the magneto-optical Kerr effect and the field dependences of the magnetization is studied as a function of the film structure.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Balaev D. A., Dubrovskii A. A., Popkov S. I., Shaikhutdinov K. A., Petrov M. I.
Заглавие : Relaxation of the remanent resistance of granular HTSC Y-Ba-Cu-O plus CuO composites after magnetic field treatment
Разночтения заглавия :авие SCOPUS: Relaxation of the remanent resistance of granular HTSC Y-Ba-Cu-O + CuO composites after magnetic field treatment
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 50, Is. 6. - P1014-1021. - ISSN 1063-7834, DOI 10.1134/S1063783408060036
Примечания : Cited References: 24
Предметные рубрики: HIGH-TEMPERATURE SUPERCONDUCTOR
TRANSPORT CURRENT
FLUX CREEP
YBA2CU3O7-DELTA
MAGNETORESISTANCE
PENETRATION
Аннотация: The hysteresis of magnetoresistance R(H) and relaxation of the remanent resistance R-rem with time after magnetic field treatment of HTSC (Y-Ba-Cu-O) + CuO composites are studied. Such a composite constitutes a network of Josephson junctions wherein the nonsuperconducting component (CuO) forms Josephson barriers between HTSC grains. By comparing the experimental R-rem(t) and R(H) dependences, it is shown that the relaxation of the remanent resistance is caused by the decreased magnetic field in the intergrain medium due to relaxation of magnetization. The reason is uncovered for the differences between the published values of pinning potentials determined by measuring the relaxation of magnetization or resistance and fitting them by the Anderson law.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Abramova G. M., Petrakovskii G. A., Bayukov O. A., Varnek V. A., Sokolov V. V., Bovina A. F.
Заглавие : Mossbauer studies of FexMn1-xS single crystals
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 50, Is. 2. - P237-240. - ISSN 1063-7834, DOI 10.1134/S1063783408020042
Примечания : Cited References: 16
Предметные рубрики: METAL-INSULATOR-TRANSITION
MAGNETIC-PROPERTIES
ALPHA-MNS
SULFIDES
MAGNETORESISTANCE
PRESSURE
SYSTEM
OXIDES
Аннотация: Single crystals of iron manganese sulfides FexMn1-xS (0.25
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Shaykhutdinov K. A., Tsikalov V. S., Petrov M. I., Balaev D. A., Semenov S. V.
Заглавие : The magnetic-field-driven effect of microwave detection in a manganite granular system
Место публикации : J. Phys. D. - 2008. - Vol. 41, Is. 1. - Ст.15004. - ISSN 0022-3727, DOI 10.1088/0022-3727/41/1/015004
Примечания : Cited References: 24
Предметные рубрики: IDENTICAL METALS
TUNNEL-JUNCTIONS
MAGNETORESISTANCE
RECTIFICATION
SPINTRONICS
TEMPERATURE
PEROVSKITES
Ключевые слова (''Своб.индексиров.''): bias currents--curie temperature--electric power generation--granular materials--magnetic field effects--microwave irradiation--voltage measurement--direct current voltage--magnetic tunnel junctions--metal insulator metal junctions--nonmagnetic metals--manganites
Аннотация: We demonstrate the microwave detection effect in a granular La0.7Ca0.3MnO3 sample. Dc voltage generated by the sample in response to microwave irradiation below the Curie temperature is found to be dependent on the applied magnetic field. The magnetic field dependence of the dc voltage has a broad peak resembling an absorption line. The detection effect depends substantially on the magnetic history of the sample; however, identical measurement conditions provide reproducibility of the experimental results. The detected dc voltage increases linearly with microwave power and strongly depends on a bias current through the sample. According to the results of systematic measurements, there exist two contributions to a value of the detected output signal. The first is magneto-independent; it can be explained in the framework of a mechanism used traditionally for description of the rectification effect in metal-insulator-metal junctions with nonmagnetic metals. The other is magneto-dependent; it originates from the interplay between the spin-dependent current through magnetic tunnel junctions and spin dynamics of the grains, which form these junctions in the sample.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Polyakova K. P., Patrusheva T. N., Velikanov D. A.
Заглавие : Features of the magnetic properties of La0.7Sr0.3MnO3 manganite films obtained by an extraction-pyrolysis method
Разночтения заглавия :авие SCOPUS: Features of the magnetic properties of La0.7Sr 0.3MnO3 Manganite films obtained by an extraction-pyrolysis method
Место публикации : Tech. Phys. Lett.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2007. - Vol. 33, Is. 4. - P330-332. - ISSN 1063-7850, DOI 10.1134/S1063785007040177
Примечания : Cited References: 12
Предметные рубрики: PHASE-SEPARATION
MAGNETORESISTANCE
Аннотация: We have experimentally studied the magnetic properties of manganite films obtained for first time using an extraction-pyrolysis technique. It is established that the characteristics of samples significantly depend on the conditions of final annealing. The annealing at temperatures T-a 970 K is accompanied by strong thermomagmetic effects. and the resulting films possess properties similar to those of spin glasses. When the annealig temperature is increased to T-a = 1020 K, the films exhibit magnetic properties typical of ferromagnetic systems.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ryabinkina L. I., Abramova G. M., Romanova O. B., Kiselev N. I.
Заглавие : Hall effect in the FexMn1-xS magnetic semiconductors
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2004. - Vol. 46, Is. 6. - P1068-1072. - ISSN 1063-7834, DOI 10.1134/1.1767246
Примечания : Cited References: 17
Предметные рубрики: MAGNETORESISTANCE
FIELDS
MNS
Аннотация: The electrical properties and the Hall effect in the FexMn1-xS magnetic semiconductors (0less than or equal toxless than or equal to0.5) have been experimentally studied in the range 77-300 K in magnetic fields of up to 15 kOe. The cation-substituted sulfides with 0.25less than or equal toxless than or equal to0.3 possessing colossal magnetoresistance (CMR) were established to be narrow-gap semiconductors with carrier concentrations nsimilar to10(11)-10(15) cm(-3) and high carrier mobilities musimilar to 10(2)-10(4) cm(2) V-1 s(-1). It is believed that the CMR effect in these sulfides can be explained in terms of the model of magnetic and electron phase separation, which is analogous to the percolation theory in the case of heavily doped semiconductors. (C) 2004 MAIK "Nauka/Interperiodica".
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