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Каталог книг и брошюр библиотеки ИФ СО РАН

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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Altunin R. R., Moiseenko E. T., Zharkov S. M.
Заглавие : Effect of the structural properties on the electrical resistivity of the Al/Ag thin films during the solid-state reaction
Коллективы : Russian Science FoundationRussian Science Foundation (RSF) [18-13-00080]
Место публикации : Phys. Solid State. - 2020. - Vol. 62, Is. 4. - P.708-713. - ISSN 1063-7834, DOI 10.1134/S1063783420040034. - ISSN 1090-6460(eISSN)
Примечания : Cited References: 43. - This study was supported by the Russian Science Foundation, project no. 18-13-00080.
Предметные рубрики: LIGHT-EMITTING-DIODES
PHASE-FORMATION
AG
AL
DIFFUSION
SUPPRESSION
INTERFACE
SURFACE
GROWTH
HEAT
Аннотация: Based on the results of in situ electron diffraction study of the solid-state reaction and electrical resistivity measurements on the Al/Ag thin films with an atomic ratio of Al : Ag = 1 : 3, the temperature of the reaction onset has been established and a model of the structural phase transitions has been proposed. The solid-state reaction begins at 70°C with the formation of the Al–Ag solid solution at the interface between the aluminum and silver nanolayers. It has been found that, in the course of the reaction, the intermetallic compounds γ-Ag2Al → μ-Ag3Al are successively formed. It is shown that the possibility of the formation of the μ‑Ag3Al phase during the solid-state reaction in the Al/Ag thin films depends on the aluminum-to-silver ratio, while the formation of the μ-Ag3Al phase begins only after all fcc aluminum has reacted.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Atuchin V. V., Aleksandrovsky A. S., Chimitova O. D., Diao C. P., Gavrilova T. A., Kesler V. G., Molokeev M. S., Krylov A. S., Bazarov B. G., Bazarova J. G., Lin Z. S.
Заглавие : Electronic structure of β-RbSm(MoO4)2 and chemical bonding in molybdates
Коллективы : Ministry of Education and Science of the Russian Federation; National Natural Science Foundation of China [11174297, 11474292]; National Basic Research Project of China [2011CB922204]; Foundation of the Director of Technical Institute of Physics and Chemistry, CAS; RAS [24-29]; RFBR [13-02-00825]
Разночтения заглавия :. в WoS: Electronic structure of beta-RbSm(MoO4)2 and chemical bonding in molybdates
Место публикации : Dalton Trans.: Royal Society of Chemistry, 2015. - Vol. 44, Is. 4. - P.1805-1815. - ISSN 1477-9226, DOI 10.1039/c4dt03203a. - ISSN 1477-9234
Примечания : Cited References: 121. - VVA and ASA gratefully acknowledge the Ministry of Education and Science of the Russian Federation for financial support. ZL acknowledges the support by National Natural Science Foundation of China (11174297 and 11474292), the National Basic Research Project of China (2011CB922204), and Foundation of the Director of Technical Institute of Physics and Chemistry, CAS. The work was partially supported by RAS Project 24-29 and RFBR Grant 13-02-00825.
Предметные рубрики: RAY PHOTOELECTRON-SPECTROSCOPY
CRYSTAL-STRUCTURE
X-RAY
NEUTRON-DIFFRACTION
MAGNETIC-PROPERTIES
PHASE-FORMATION
CORE LEVELS
2ND-HARMONIC GENERATION
LUMINESCENCE PROPERTIES
VIBRATIONAL PROPERTIES
Аннотация: Microcrystals of orthorhombic rubidium samarium molybdate, beta-RbSm(MoO4)(2), have been fabricated by solid state synthesis at T = 450 degrees C, 70 h, and at T = 600 degrees C, 150 h. The crystal structure has been refined by the Rietveld method in space group Pbcn with cell parameters a = 5.0984(2), b = 18.9742(6) and c = 8.0449(3) angstrom (R-B = 1.72%). Thermal properties of beta-RbSm(MoO4)(2) were traced by DSC over the temperature range of T = 20-965 degrees C, and the earlier reported β ↔ α phase transition at T similar to 860-910 degrees C was not verified. The electronic structure of beta-RbSm(MoO4) 2 was studied by employing theoretical calculations and X-ray photoelectron spectroscopy. It has been established that the O 2p-like states contribute mainly to the upper part of the valence band and occupy the valence band maximum, whereas the Mo 4d-like states contribute mainly to the lower part of the valence band. Chemical bonding effects have been analysed from the element core level binding energy data. In addition, it was found that the luminescence spectrum of beta-RbSm(MoO4)(2) is rather peculiar among the Sm3+ containing materials. The optical refractive index dispersion in beta-RbSm(MoO4)(2) was also predicted by the first-principles calculations.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Matsynin A. A., Bykova L. E., Mikhlin Y. L., Bondarenko G. N., Patrin G. S., Yurkin G. Yu.
Заглавие : Formation of ferromagnetic germanides by solid-state reactions in 20Ge/80Mn films
Место публикации : Thin Solid Films: Elsevier Science, 2014. - Vol. 552. - P.86-91. - ISSN 0040-6090, DOI 10.1016/j.tsf.2013.12.029
Примечания : Cited References: 53
Предметные рубрики: PHASE-FORMATION
MAGNETIC-PROPERTIES
Mn5Ge3 FILMS
X-RAY
Ge(111)
TRANSFORMATIONS
DIFFUSION
SPECTRA
SYSTEM
LAYERS
Ключевые слова (''Своб.индексиров.''): manganite-germanium--solid state reaction--first phase--mn5ge3 alloy--carbon impurity--oxygen impurity--annealing--magnetic anisotropy
Аннотация: Solid state reactions between Ge and Mn films are systematically examined using X-ray diffraction, photoelectron spectroscopy, and magnetic and electrical measurements. The films have a nominal atomic ratio Ge:Mn = 20:80 and are investigated at temperatures from 50 to 500 °C. It is established that after annealing at ~ 120°C, the ferromagnetic Mn5Ge3 phase is the first phase to form at the 20Ge/80Mn interface. As the annealing temperature increases to 300°C, the weak magnetic Mn5Ge 2 + Mn3Ge phases simultaneously begin to grow and they become dominant at 400°C. Increasing the annealing temperature to 500°C leads to the formation of the ferromagnetic phase with a Curie temperature TC ~ 350-360 K and magnetization 14-25 kA/m at room temperature. The X-ray diffraction study of the samples shows the reflections from the Mn 5Ge3 phase, and the photoelectron spectra contain the oxygen and carbon peaks. The homogeneous distribution of oxygen and carbon over the sample thickness suggests that the increased Curie temperature and magnetization are related to the migration of C and O atoms into the Mn 5Ge3 lattice and the formation of the Nowotny phase Mn5Ge3CxOy. The initiation temperature (~ 120 C) is the same in the Mn5Ge3 phase with the solid-state reactions in the Ge/Mn films as well as in the phase separation in the GexMn1 - x diluted semiconductors. Thus, we conclude that the synthesis of the Mn5Ge3 phase is the moving force for the spinodal decomposition of the GexMn 1 - x diluted semiconductors.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Bykova L. E., Bondarenko G. N., Bondarenko G. V.
Заглавие : Long-range chemical interaction in solid-state synthesis: The Kirkendall effect and solid-state reactions in Cu/beta-CuZn and Cu/Fe/beta-CuZn film systems
Коллективы :
Разночтения заглавия :авие SCOPUS: Long-range chemical interaction in solid-state synthesis: The Kirkendall effect and solid-state reactions in Cu/β-CuZn and Cu/Fe/β-CuZn film systems
Место публикации : JETP Letters. - 2010. - Vol. 91, Is. 12. - P.665-669. - ISSN 0021-3640, DOI 10.1134/S0021364010120106
Примечания : Cited References: 26. - We are grateful to Yu. L. Mikhlin for the measurements of the X-ray photoelectron spectra and for stimulating discussions. This work was supported by the Ministry of Education and Science of the Russian Federation (project no. 2.1.1/4399, program "Development of the Scientific Potential of Higher Education in 2009-2010").
Предметные рубрики: PHASE-FORMATION
DIFFUSION
Аннотация: The results of the experimental investigations of the solid-state reaction of Cu with beta brass, which is associated with the Kirkendall, in Cu/beta-CuZn and Cu/Fe/beta-CuZn film systems are reported. It has been shown that the initiation temperature of the solid-state synthesis of alpha brass at the Cu/beta-CuZn interface is about 200A degrees C. The chemically inert Fe barrier layers 420 and 850 nm in thickness between the Cu and beta-CuZn films do not suppress the solid-state synthesis of the alpha brass, but increase the initiation temperature to about 250A degrees C. This behavior indicates that the chemical interaction between the Cu and Zn atoms through the chemically inert Fe layer is long-range. The X-ray photoelectron investigations reveal the migration of Zn atoms from the beta-CuZn layer through the Fe barrier to the Cu layer. The results are interpreted under the assumption that the migration of Zn atoms in the Kirkendall is initiated by the strong chemical interaction between the Cu and Zn atoms in the Cu and beta-CuZn layers, which is due to the synthesis of alpha brass, rather than by the diffusion random walk, as is commonly accepted at present.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Bayukov O. A., Mikhlin Y. L., Zhigalov V. S., Bykova L. E., Bondarenko G. N.
Заглавие : Long-range chemical interactions in solid-state reactions: effect of an inert Ag interlayer on the formation of L10-FePd in epitaxial Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1) trilayers
Место публикации : Philos. Mag.: Taylor & Francis, 2014. - Vol. 94, Is. 23. - P.2595-2622. - ISSN 1478-6435, DOI 10.1080/14786435.2014.926037. - ISSN 1478-6443
Примечания : Cited References: 117
Предметные рубрики: HIGH-TEMPERATURE SYNTHESIS
THIN-FILMS
PHASE-FORMATION
MAGNETIC-PROPERTIES
X-RAY
MARTENSITIC TRANSFORMATIONS
PHOTOELECTRON-SPECTROSCOPY
STRUCTURAL CHARACTERISTICS
CASIMIR FORCE
GOLD-FILMS
Ключевые слова (''Своб.индексиров.''): fe-pd system--epitaxial thin film--inert ag buffer layer--diffusion--solid-state reactions--l1(0)--long-range chemical interactions
Аннотация: The effect of 0, 0.5, and 1 μm-thick Ag interlayers on the chemical interaction between Pd and Fe in epitaxial Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1)/MgO(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1)/MgO(0 0 1) trilayers has been studied using X-ray diffraction, 57Fe Mössbauer spectroscopy, X-ray photoelectron spectroscopy, and magnetic structural measurements. No mixing of Pd and Fe occurs via the chemically inert Ag layer at annealing temperatures up to 400 °C. As the annealing temperature is increased above 400 °C, a solid-state synthesis of an ordered L10-FePd phase begins in the Pd(0 0 1)/Ag(0 0 1)/Fe(0 0 1) and Fe(0 0 1)/Ag(0 0 1)/Pd(0 0 1) film trilayers regardless of the thickness of the buffer Ag layer. In all samples, annealing above 500 °C leads to the formation of a disordered FexPd1−x(0 0 1) phase; however, in samples lacking the Ag layer, the synthesis of FexPd1−x is preceded by the formation of an ordered L12-FePd3 phase. An analysis of the X-ray photoelectron spectroscopy results shows that Pd is the dominant moving species in the reaction between Pd and Fe. According to the preliminary results, the 2.2 μm-thick Ag film does not prevent the synthesis of the L10-FePd phase and only slightly increases the phase’s initiation temperature. Data showing the ultra-fast transport of Pd atoms via thick inert Ag layers are interpreted as direct evidence of the long-range character of the chemical interaction between Pd and Fe. Thus, in the reaction state, Pd and Fe interact chemically even though the distance between them is about 104 times greater than an ordinary chemical bond length.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Tambasov I. A., Bayukov O. A., Zhigalov V. S., Bykova L. E., Mikhlin Yu. L., Volochaev M. N., Bondarenko G. N.
Заглавие : Solid state synthesis and characterization of ferromagnetic nanocomposite Fe-In2O3 thin films
Место публикации : J. Alloys Compd.: Elsevier Science, 2014. - Vol. 612. - P.189-194. - ISSN 0925-8388, DOI 10.1016/j.jallcom.2014.05.176. - ISSN 1873-4669
Примечания : Cited References: 56
Предметные рубрики: HIGH-TEMPERATURE FERROMAGNETISM
PHASE-FORMATION
In2O
OXIDE
NANOPARTICLES
CO
SEMICONDUCTORS
NANOCRYSTALS
COMBUSTION
SYSTEMS
Ключевые слова (''Своб.индексиров.''): thermite reactions--reactive films--ferromagnetic nanocomposite films--transparent conducting oxides
Аннотация: We have successfully synthesized ferromagnetic Fe-In2O 3 nanocomposite thin films for the first time using the thermite reaction Fe2O3 + In = In2O3 + Fe. The initial In/Fe2O3 bilayers were obtained by the deposition of In layers on α-Fe2O3 films. The reaction occurs in a self-propagating mode in a homogeneous thermal film plane field at heating rates above 20 K/s and at temperatures above initiation temperature T[[d]]in[[/d]] ~ 180 °C. At heating rates lower than 20 K/s the mixing of the In and Fe2O3 layers occurs across the whole In/Fe2O3 interface and the synthesis of the ferromagnetic α-Fe phase starts above the initiation temperature T[[d]]in[[/d]] = 180 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Mossbauer spectroscopy, transmission electron microscopy and magnetic measurements were used for phase identification and microstructure observation of the synthesized Fe-In2O3 samples. The reaction products contain (1 1 0) textured α-Fe nanocrystals with a diameter around 100 nm and surrounded by an In2O3 matrix. These results enable new efficient low-temperature methods for synthesizing ferromagnetic nanocomposite films containing ferromagnetic nanoclusters embedded in transparent conducting oxides. © 2014 Elsevier B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Bondarenko G. N., Mikhlin Y. L., Patrin G. S., Velikanov D. A.
Заглавие : Solid-state formation of ferromagnetic δ-Mn0.6Ga0.4 thin films with high rotatable uniaxial anisotropy
Место публикации : Phys. Status Solidi B: Wiley-VCH Verlag GMBH, 2012. - Vol. 249, Is. 8. - P.1541-1545. - ISSN 0370-1972, DOI 10.1002/pssb.201248064
Примечания : Cited References: 39
Предметные рубрики: EPITAXIAL-GROWTH
PERPENDICULAR ANISOTROPY
MAGNETIC-PROPERTIES
PHASE-FORMATION
GAAS
GAN
Ключевые слова (''Своб.индексиров.''): high anisotropy constants--mnxga1-x alloys--rotatable magnetic anisotropies--thin films
Аннотация: Solid-state reactions in Ga/Mn polycrystalline films of the composition 1 Ga:3 Mn were experimentally investigated. Our X-ray study showed that the formation of the Ga/Mn → (250 °C) ϕ-Ga7.7Mn2.3 → (350 °C) δ-Mn0.6Ga0.4 phase sequence occurs when the annealing temperature is increased to 400 °C. δ-Mn0.6Ga0.4 samples were found to have high rotatable uniaxial anisotropy. We also showed that magnetic fields with coercivities above H HC = 8.3 kOe can be used to orient the easy anisotropy axis in any spatial direction while taking the angle of the lag into account.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Bayukov O. A., Bykova L. E., Zhigalov V. S., Bondarenko G. N.
Заглавие : Solid-state synthesis in Ni/Fe/MgO(001) epitaxial thin films
Место публикации :. - Vol. 80, Is. 7. - P.487-490. - ISSN 0021-3640, DOI 10.1134/1.1839296
Примечания : Cited References: 34
Предметные рубрики: HIGH-TEMPERATURE SYNTHESIS
BINARY DIFFUSION COUPLES
MARTENSITIC TRANSFORMATIONS
PHASE-FORMATION
MAGNETIC-PROPERTIES
SPIN DYNAMICS
INVAR-ALLOYS
IRON
TRANSITION
NUCLEATION
Аннотация: Solid-state synthesis in Ni/Fe/MgO(001) bilayer epitaxial thin films has been studied experimentally. The phase sequence Fe/Ni -- (similar to350degreesC)Ni(3)Fe -- (similar to400degreesC)NiFe -- (similar to550degreesC)gamma(par) is formed as the annealing temperature increases. The crystal structure in the invar region consists of epitaxially intergrown single-crystal blocks consisting of the paramagnetic gamma(par) and ferromagnetic NiFe phases, which satisfy the orientation relationship [100](001)NiFe parallel to [100](001)gamma(par). It has been shown that the nucleation temperatures of the Ni(3)Fe, NiFe, and gamma(par) phases coincide with the temperatures of solid-state transformations in the Ni-Fe system. (C) 2004 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Myagkov V. G., Zhigalov V. S., Bykova L. E., Zharkov S. M., Matsynin A. A., Volochaev M. N., Tambasov I. A., Bondarenko G. N.
Заглавие : Thermite synthesis and characterization of Co-ZrO2 ferromagnetic nanocomposite thin films
Место публикации : J. Alloys Compd.: Elsevier, 2016. - Vol. 665. - P.197-203. - ISSN 09258388 (ISSN), DOI 10.1016/j.jallcom.2015.12.257
Примечания : Cited References: 56. - This study was partially supported by the Russian Foundation for Basic Research (grants ##15-02-00948, 14-03-00515), by the Council for Grants of the President of the Russian Federation (SP-317.2015.1), and by the program of the Foundation for Assistance to Small Innovative Enterprises in Science and Technology (“UMNIK” program). The TEM studies were carried out using the facilities of Electron Microscopy Laboratory of Siberian Federal University and the Performance Service at Krasnoyarsk Scientific Center.
Предметные рубрики: SOLID-STATE SYNTHESIS
PHASE-FORMATION
ZrO2
NANOPARTICLES
TRANSPORT
OXIDE
MICROSTRUCTURE
NANOTHERMITE
FABRICATION
PARTICLES
Ключевые слова (''Своб.индексиров.''): thermite reactions--reactive films--ferromagnetic nanocomposite films--zro2
Аннотация: Co-ZrO2 ferromagnetic nanocomposite thin films were successfully synthesized using a new thermite reaction between Zr and Co3O4 in layer geometry. The initial Zr/Co3O4 bilayers were obtained by the deposition of Zr layers onto Co3O4 films at room temperature. The process of mixing at the Zr/Co3O4 interface and synthesis of fine-crystalline Co and amorphous ZrO2 phases started at a temperature above the initiation temperature Tin ∼250 °C which did not depend on the bilayer thickness. For the bilayer thickness more than 300 nm high-temperature fcc-Co and cubic c-ZrO2 (or tetragonal t-ZrO2) phases were formed. For the bilayer thickness less than ∼50 nm stable low-temperature hexagonal hcp-Co and monoclinic m-ZrO2 phases were also present in the reaction product. A partial transformation from Co3O4 to CoO occurred after annealing at 300 °C. The secondary reaction between CoO and Zr started soon after Co3O4 had been converted to the CoO phase. After annealing at 500 °C more than 80% of Co was reduced and the final product contained Co nanoparticles above and below the superparamagnetic critical size embedded into a dielectric ZrO2 matrix. The synthesized Co-ZrO2 nanocomposite films possessed soft magnetic behavior, high magnetization and good chemical stability.
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