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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Eremin E. V., Eremin A. V., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Frequency-dependent magnetotransport phenomena in a hybrid Fe/SiO2/p-Si structure
Место публикации : J. Appl. Phys.: American Institute of Physics, 2012. - Vol. 112, Is. 12. - Ст.123906. - ISSN 0021-8979, DOI 10.1063/1.4769788
Примечания : Cited References: 31. - This study was supported by the Russian Foundation for Basic Research, Project No. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; the Division of Physical Sciences of the Russian Academy of Sciences, program Spin Phenomena in Solids Nanostructures and Spintronics, Project No. II.4.3; the Siberian Branch of the Russian Academy of Sciences, Integration Projects Nos. 85 and 102, and the Federal target program Scientific and Pedagogical Personnel of Innovative Russia (State Contract No. NK-556P_15).
Предметные рубрики: SILICON
IRON
SPINTRONICS
PAIRS
Аннотация: We report the large magnetoimpedance effect in a hybrid Fe/SiO2/p-Si structure with the Schottky barrier. The pronounced effect of magnetic field on the real and imaginary parts of the impedance has been found at temperatures 25-100K in two relatively narrow frequency ranges around 1 kHz and 100MHz. The observed frequency-dependent magnetotransport effect is related to the presence of localized "magnetic" states near the SiO2/p-Si interface. In these states, two different recharging processes with different relaxation times are implemented. One process is capture-emission of carriers that involves the interface levels and the valence band; the other is the electron tunneling between the ferromagnetic electrode and the interface states through SiO2 potential barrier. In the first case, the applied magnetic field shifts energy levels of the surface states relative to the valence band, which changes recharging characteristic times. In the second case, the magnetic field governs the spin-dependent tunneling of carriers through the potential barrier. The "magnetic" interface states originate, most likely, from the formation of the centers that contain Fe ions, which can easily diffuse through the SiO2 layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769788]
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vorotynov A. M., Ovchinnikov S. G., Rudenko V. V., Vorotynova O. V.
Заглавие : Electron paramagnetic resonance of Cr3+ ions in ABO3 (A = Sc, Lu, In) diamagnetic crystals
Место публикации : J. Exp. Theor. Phys.: MAIK Nauka-Interperiodica / Springer, 2016. - Vol. 122, Is. 4. - P.734-737. - ISSN 1063-7761, DOI 10.1134/S1063776116040087. - ISSN 1090-6509(eISSN)
Примечания : Cited References:11
Предметные рубрики: Spin-resonance
Pairs
Anisotropy
CrBO3
VBO3
Аннотация: A magnetic resonance method is applied to the investigation of a number of isostructural diamagnetic compounds ABO3 (A = Sc, Lu, In) with small additions of Cr3+ ions (S = 3/2) sufficient to observe single-ion spectra. It is shown that the resonance spectra for isolated Cr3+ ions can be described to a good accuracy by the ordinary axial spin Hamiltonian for 3d ions in octahedral oxygen environment. The parameters of the spin Hamiltonian are determined. It is established that Cr3+ ions in these crystals are characterized by easy-axis-type anisotropy.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Vorotynov A. M., Rudenko V. V., Ovchinnikov S. G., Molokeev M. S.
Заглавие : Electron Paramagnetic Resonance of Cr3+ Ions in ABO(3) (A = Sc, In, Ga) Diamagnetic Crystals
Место публикации : J. Exp. Theor. Phys. - 2018. - Vol. 127, Is. 6. - P.1067-1073. - ISSN 1063-7761, DOI 10.1134/S1063776118120245. - ISSN 1090-6509(eISSN)
Примечания : Cited References: 14
Предметные рубрики: SPIN-RESONANCE
PAIRS
ANISOTROPY
VBO3
Аннотация: A magnetic resonance method is applied to the investigation of a number of isostructural diamagnetic compounds ABO3 (A = Sc, In, and Ga) with small additions of Cr3+ ions (S = 3/2) sufficient to observe single-ion and pair spectra. It is shown that the resonance spectra for isolated Cr3+ ions can be described to a good accuracy by the ordinary axial spin Hamiltonian for 3d ions in octahedral oxygen environment. The parameters of the spin Hamiltonian are determined for single Cr3+ ion and Cr3+–Cr3+ pair. Lattice distorsions of the parent ABO3 crystals caused by the Cr3+ impurities is discussed.
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