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    Микромагнитное моделирование и численный анализ процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик / Б. А. Беляев [и др.] // Изв. вузов. Физика. - 2013. - Т. 56, № 8/2. - С. 230-232. - Работа выполнена при финансовой поддержке ФЦП «Научные и научно-педагогические кадры инновационной России 2009−2013»
   Перевод заглавия: Micromagnetic simulation and numerical analysis of magnetization reversal processes in thin-film ferromagnetic/antiferromagnetic bilayer
Кл.слова (ненормированные):
микромагнитное моделирование -- ферромагнетик/антиферромагнетик -- петля гистерезиса -- обменное смещение -- коэрцитивная сила -- micromagnetic simulation -- coercivity -- ferromagnetic/antiferromagnetic -- hysteresis loop -- exchange bias
Аннотация: На основе численного микромагнитного моделирования проведено исследование процессов перемагничивания двухслойных тонкопленочных структур ферромагнетик/антиферромагнетик. Сделан анализ влияния параметров структуры на величину поля обменного сдвига и коэрцитивной силы. Результаты расчета сравниваются с экспериментальными и теоретическими данными.
On the basis of the numerical micromagnetic simulation the study of magnetization reversal processes in thin-film ferromagnetic/antiferromagnetic bilayers was performed. The analysis of influence of parameters of the structure on exchange bias field and coercive force was carried out. Calculation results are compared with experimental and theoretical data.

Держатели документа:
Институт физики им. Л.В. Киренского СО РАН

Доп.точки доступа:
Изотов, Андрей Викторович; Izotov, A.V.; Беляев, Борис Афанасьевич; Belyaev, B. A.; Соловьев, Платон Николаевич; Волошин, Александр Сергеевич; Voloshin, A. S.
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Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures / N. V. Volkov [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 526-529, DOI 10.4028/www.scientific.net/SSP.190.526 . - ISBN 1012-0394. - ISBN 9783037854365
Кл.слова (ненормированные):
Hybrid structure -- Mis transition -- Photoelectric effect -- Schottky barrier -- Channel switching -- Comparative analysis -- Electron hole pairs -- Fe films -- Fe layer -- Ferromagnetic films -- Hybrid structure -- Optical effects -- Optical radiations -- Photogeneration -- Planar geometries -- Schottky barriers -- Semiconductor substrate -- Temperature variation -- Critical currents -- Interfaces (materials) -- Magnetic materials -- Photoelectricity -- Schottky barrier diodes -- Silicon -- Switching circuits -- Transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
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Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry / N. V. Volkov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст. 123924. - P. , DOI 10.1063/1.3600056 . - ISSN 0021-8979
Кл.слова (ненормированные):
Channel switching -- Comparative analysis -- Fe films -- Fe layer -- Ferromagnetic films -- High temperature -- Hybrid structure -- Inversion layer -- Metal-insulator-semiconductors -- Negative magneto-resistance -- Planar geometries -- Positive magnetoresistance -- Schottky barriers -- Semiconductor substrate -- Temperature variation -- Weak localization -- Critical currents -- Electric resistance -- Ferromagnetic materials -- Geometry -- Magnetic fields -- Magnetoelectronics -- Magnetoresistance -- Metal insulator boundaries -- Metal insulator transition -- MIS devices -- Schottky barrier diodes -- Silicon -- Silicon compounds -- Switching circuits -- Transport properties -- Semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович
}
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Belyaev, B. A.
Micromagnetic modeling of static and dynamic properties of ferromagnetic/antiferromagnetic bilayer / B. A. Belyaev, A. V. Zotov, P. N. Solovev // Int. Sib. Conf. on Control and Communicat. : Proc. - 2013. - Conference code: 102462. Cт. 6693573, DOI 10.1109/SIBCON.2013.6693573. - Cited References: 13 . - ISSN 978-1-479

РУБ Engineering, Electrical & Electronic + Telecommunications
Рубрики:
EXCHANGE-BIAS
DEPENDENCE
Кл.слова (ненормированные):
absorption spectrum -- exchange bias -- micromagnetic modeling
Аннотация: Static and dynamic properties of ferromagnetic (F) antiferromagnetic (AF) bilayer have been studied by using micromagnetic calculations. The reasonable value of exchange bias field has been obtained. In addition, we have shown the strong dependence of a resonance frequency F/AF structure on an angle between an external magnetic field and an easy axis of the bilayer.

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Доп.точки доступа:
Zotov, A. V.; Solovev, P. N.; Беляев, Борис Афанасьевич; International Siberian Conference on Control and Communications(10 ; 2013 ; Sept. 12-13 ; Krasnoyarsk)
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Magnetic tunnel structures: Transport properties controlled by bias, magnetic field, and microwave and optical radiation / N. V. Volkov [et al.] // J. Magn. Magn. Mater. - 2012. - Vol. 324, Is. 21. - P. 3579-3583, DOI 10.1016/j.jmmm.2012.02.095. - Cited References: 15. - This study was supported by the RFBR, project no. 11-02-00367-a; the Presidium of the Russian Academy of Sciences, project no. 21.1; the Division of Physical Sciences of the Russian Academy of Sciences, project no. 2.4.4.1; the Siberian Branch of the Russian Academy of Sciences, integration projects nos. 5, 22 and 134, and the Federal Program (State contract no. NK-556P_15). . - ISSN 0304-8853

РУБ Physics, Condensed Matter + Materials Science, Multidisciplinary

Кл.слова (ненормированные):
Spintronics -- Magnetic tunnel junction -- High-frequency rectification -- Photoelectric effect
Аннотация: Different phenomena that give rise to a spin-polarized current in some systems with magnetic tunnel junctions are considered. In a manganite-based magnetic tunnel structure in CIP geometry, the effect of current-channel switching was observed, which causes bias-driven magnetoresistance, rf rectification, and the photoelectric effect. The second system under study, ferromagnetic/insulator/semiconductor, exhibits the features of the transport properties in CIP geometry that are also related to the current-channel switching effect. The described properties can be controlled by a bias, a magnetic field, and optical radiation. At last, the third system under consideration is a cooperative assembly of magnetic tunnel junctions. This system exhibits tunnel magnetoresistance and the magnetic-field-driven microwave detection effect. (C) 2012 Elsevier BY. All rights reserved.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Eremin, E. V.; Еремин, Евгений Владимирович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
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Coercivity and exchange bias in magnetic sandwich structure prepared by chemical deposition / A. V. Chzhan [et al.] // Solid State Phenomena : Selected, peer reviewed papers. - 2012. - Vol. 190: Magnetism and Magnetic Materials V : Selected, Peer Reviewed Papers. - P. 463-465, DOI 10.4028/www.scientific.net/SSP.190.463. - Cited References: 5 . - ISSN 1662-9779. - ISSN 978-30378

РУБ Materials Science, Multidisciplinary + Physics, Multidisciplinary

Кл.слова (ненормированные):
sandwich structure -- exchange bias -- coercivity -- magnetization reversal
Аннотация: Exchange bias and coercivity of the hysteresis loop of a low-coercive layer in magnetic three-layered structure prepared by chemical deposition are studied. It is established that the coercive force in the films obtained nonmonotonically changed with the low-coercive layer thickness. The specificity of magnetization reversal of exchange-biased layers is analyzed.

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Доп.точки доступа:
Perov, N. \ed.\; Rodionova, V. \ed.\; Chzhan, A. V.; Чжан, Анатолий Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kiparisov, S. Ya.; Кипарисов, Семен Яковлевич; Seredkin, V. A.; Середкин, Виталий Александрович; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
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The bias-controlled giant magnetoimpedance effect caused by the interface states in a metal-insulator-semiconductor structure with the Schottky barrier / N. V. Volkov [et al.] // Appl. Phys. Lett. - 2014. - Vol. 104, Is. 22. - Ст. 222406, DOI 10.1063/1.4881715. - Cited References: 20. - This study was supported by the Russian Foundation for Basic Research, Project Nos. 14-02-00234-a and 14-02-31156; the Presidium of the Russian Academy of Sciences, program Quantum Mesoscopic and Disordered Structures, Project No. 20.8; and the Russian Ministry of Education and Science, Project No. 02.G25.31.0043. . - ISSN 0003-6951. - ISSN 1077-3118

РУБ Physics, Applied
Рубрики:
MAGNETO-IMPEDANCE
FILMS
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10–30 K in the frequency range of 10 Hz–1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (<1 kHz), these ratios could be controlled in wide range by applying bias to the device. The main contribution to the impedance when measured at temperatures corresponding to the strongest magnetic-field sensitivity comes from the interface states localized near the SiO2/n-Si interface and the processes of their recharging in an applied ac voltage. The applied magnetic field changes the energy structure of the interface states, thus affecting the processes of the charging dynamics.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia
Russian Acad Sci, Inst Automat & Control Proc, Far East Branch, Vladivostok 690041, Russia
Far Eastern Fed Univ, Sch Nat Sci, Vladivostok 690950, Russia

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Gustaitsev, A. O.; Balashov, V. V.; Korobtsov, V .V.; Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156]; Presidium of the Russian Academy of Sciences [20.8]; Russian Ministry of Education and Science [02.G25.31.0043.]
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The investigation of long-range exchange interaction in spin valve structures / P. D. Kim [et al.] // Solid State Phenom. : Selected, peer reviewed papers. - 2014. - Vol. 215: Trends in Magnetism: Nanomagnetism (EASTMAG-2013). - P. 489-494, DOI 10.4028/www.scientific.net/SSP.215.489. - Cited References: 17 . - ISSN 978-30383. - ISSN 1662-9779
Кл.слова (ненормированные):
Exchange bias -- Exchange interaction -- Spin valve -- Thin films
Аннотация: Magnetic spin valve structures have a great practical interest as sensors of magnetic fields, hard disk read heads and elements of magnetic random access memories (MRAM). Despite the large number of experimental and theoretical work on spin valve structures, the effects of interlayer interactions occurring in these structures, at present time are not fully understood. © (2014) Trans Tech Publications, Switzerland.

Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Samardak, A. \ed.\; Kim, P. D.; Ким, Пётр Дементьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Турпанов, Игорь Александрович; Marushchenko, D. A.; Марущенко, Дмитрий Анатольевич; Lee, L. A.; Ли, Людмила Алексеевна; Rudenko, T. V.; Руденко, Т. В.; Euro-Asian Symposium "Trends in MAGnetism": Nanomagnetism(5 ; 2013 ; sept. ; 15-21 ; Vladivostok)
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Magnetic properties and the mechanism of formation of the uncompensated magnetic moment of antiferromagnetic ferrihydrite nanoparticles of a bacterial origin / D. A. Balaev [et al.] // J. Exp. Theor. Phys. - 2014. - Vol. 119, Is. 3. - P. 479-487, DOI 10.1134/S1063776114080044. - Cited References: 42. - This work was supported by the Ministry of Education and Science of the Russian Federation (state contract in 2014-2016) and a program of the Siberian Branch of the Russian Academy of Sciences. . - ISSN 1063-7761. - ISSN 1090-6509

РУБ Physics, Multidisciplinary
Рубрики:
NIO NANOPARTICLES
   EXCHANGE BIAS
   HYSTERESIS ANOMALIES
   FERRITIN
   SURFACE
   MOSSBAUER
   ORDER
   SIZE
Аннотация: The magnetic properties of the superparamagnetic ferrihydrite nanoparticles that form as a result of the vital activity of Klebsiella oxytoca bacteria are studied. Both an initial powder with an average number of iron atoms N Fe ∼ 2000–2500 in a particle and this powder after annealing at 140°C for 3 h in air are investigated. The following substantial modifications of the magnetic properties of the ferrihydrite nanoparticles are detected after annealing: the superparamagnetic blocking temperature increases from 23 to 49.5 K, and the average magnetic moment of a particle increases (as follows from the results of processing of magnetization curves). The particles have antiferromagnetic ordering, and the magnetic moment resulting in the superparamagnetism of the system appears due to random spin decompensation inside the particle. For this mechanism, the number of uncompensated spins is proportional to the number of magnetically active atoms raised to the one-half power, and this relation holds true for the samples under study at a good accuracy. The possible causes of the detected shift of magnetic hysteresis loops at low temperatures upon field cooling are discussed.

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Публикация на русском языке Магнитные свойства и механизм формирования нескомпенсированного магнитного момента антиферромагнитных наночастиц ферригидрита бактериального происхождения [Текст] / Д. А. Балаев [и др.] // Журн. эксперим. и теор. физ. : Наука, 2014. - Т. 146 Вып. 3. - С. 546–556

Держатели документа:
Russian Acad Sci, Siberian Branch, Kirenskii Inst Phys, Krasnoyarsk 660041, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Russian Acad Sci, Int Sci Ctr Extreme States Organisms, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Balaev, D. A.; Балаев, Дмитрий Александрович; Krasikov, A. A.; Красиков, Александр Александрович; Dubrovskii, A. A.; Дубровский, Андрей Александрович; Semenov, S. V.; Семёнов, Сергей Васильевич; Bayukov, O. A.; Баюков, Олег Артемьевич; Stolyar, S. V.; Столяр, Сергей Викторович; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Ladygina, V. P.; Ладыгина, Валентина Петровна; Ishchenko, L. A.; Ищенко, Л. А.; Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences
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10.

Calculation of thermostable directions and the influence of bias electricfield on the propagation of the Lamb and SH waves in langasite single crystalplates / S. I. Burkov [et al.] // Proceedings - IEEE Ultrasonics Symposium. - 2010. - Ст. 5935458. - P. 1853-1856, DOI 10.1109/ULTSYM.2010.5935458 . - ISBN 1051. - ISBN 9781457703829
Кл.слова (ненормированные):
dc electric field influence -- Lamb wave -- SH-wave -- thermostability -- Bias electric fields -- Dc electric field -- Lamb Wave -- Langasite crystals -- Langasites -- SH wave -- Single-crystal plates -- Temperature coefficient -- thermostability -- Computer simulation -- Electromechanical coupling -- Shear waves -- Single crystals -- Ultrasonics -- Electric fields -- Electric fields -- Shear waves
Аннотация: Paper is presented the results of computer simulation. Effect of the dcelectric field influence on the propagation of Lamb and SH waves and itstemperature coefficients of delay in piezoelectric langasite crystal plate for alot of cuts and directions have been calculated. There were found the cutspossessing the thermostability and sufficient electromechanical coupling. В©2010 IEEE.

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Доп.точки доступа:
Burkov, S. I.; Zolotova, O. P.; Turchin, P. P.; Sorokin, B. P.; Aleksandrov, K. S.; Александров, Кирилл Сергеевич; IEEE International ultrasonics symposium(2010 ; Oct. ; 11-14 ; San Diego, CA)
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