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1.


    Belyaev, B. A.
    Impedance spectra of thin permalloy films with a nanoisland structure / B. A. Belyaev, N. A. Drokin // Phys. Solid State. - 2012. - Vol. 54, Is. 2. - P. 360-367, DOI 10.1134/S1063783412020084. - Cited References: 20. - This study was supported by the Russian Federal Targeted Program "Scientific and Scientific-Pedagogical Human Resources for the Innovative Russia in 2009-2013," the Siberian Branch of the Russian Academy of Sciences (Integration research project no. 5), and the Presidium of the Russian Academy of Sciences (project no. 21.1). . - ISSN 1063-7834
РУБ Physics, Condensed Matter
Рубрики:
CAPACITANCE
Аннотация: The behavior of the impedance spectra of island permalloy films prepared through vacuum evaporation onto optically polished glass-ceramic substrates has been investigated in the frequency range from 0.0001 to 100 MHz. A resistor-capacitor model of the films has been developed and the model parameters, for which there is a good agreement with experimental data on the frequency dependences of the real and imaginary components of the impedance, have been determined. The specific features in the behavior of the electrical and physical characteristics with variations in the thickness of the sample and the gap between the measuring electrodes have been investigated. It has been found that the relative permittivity of the films under investigation reaches values E similar to 10(7)-10(8). The structural relaxation times have been calculated.

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Публикация на русском языке Беляев, Борис Афанасьевич. Спектры импеданса тонких пермаллоевых пленок с наноостровковой структурой [Текст] / Б. А. Беляев, Н. А. Дрокин // Физ. тверд. тела : Физико-технический институт им. А.Ф.Иоффе РАН, 2012. - Т. 54 Вып. 2. - С. 340-346

Держатели документа:
[Belyaev, B. A.
Drokin, N. A.] Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
[Belyaev, B. A.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia

Доп.точки доступа:
Drokin, N. A.; Дрокин, Николай Александрович; Беляев, Борис Афанасьевич
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2.


   
    Wigner function description of ac transport through a two-dimensional quantum point contact / I. E. Aronov [et al.] // J. Phys.: Condens. Matter. - 1997. - Vol. 9, Is. 24. - P. 5089-5103, DOI 10.1088/0953-8984/9/24/009. - Cited References: 45 . - ISSN 0953-8984
РУБ Physics, Condensed Matter
Рубрики:
QUANTIZED CONDUCTANCE
   BALLISTIC-RESISTANCE

   CONSTRICTION

   CAPACITANCE

   ADMITTANCE

   ELECTRONS

   SYSTEMS

   FIELD

   PUMP

Аннотация: We have calculated the admittance of a two-dimensional quantum point contact (QPC) using a novel variant of the Wigner distribution function (WDF) formalism. In the semiclassical approximation, a Boltzmann-like equation is derived for the partial WDF describing both propagating and non-propagating electron modes in an effective potential generated by the adiabatic QPC. We show that this quantum kinetic approach leads to the well known stepwise behaviour of the real part of the admittance (the conductance), and of the imaginary part of the admittance (the emittance), in agreement with the latest results derived by Christen and Buttiker, which is determined by the number of propagating electron modes. It is shown that the emittance is sensitive to the geometry of the QPC, and can be controlled by the gate voltage. We have established that the emittance has contributions corresponding to both quantum inductance and quantum capacitance. Stepwise oscillations in the quantum inductance are determined by the harmonic mean of the velocities for the propagating modes, whereas the quantum capacitance is a significant mesoscopic manifestation of the nonpropagating (reflecting) modes.

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Держатели документа:
LOS ALAMOS NATL LAB,CNLS,LOS ALAMOS,NM 87545
UKRAINIAN ACAD SCI,INST RADIOPHYS & ELECT,UA-310085 KHARKOV,UKRAINE
LV KIRENSKII INST PHYS,KRASNOYARSK 660036,RUSSIA
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ИФ СО РАН
Theoretical Division, CNLS, Los Alamos National Laboratory, Los Alamos, NM 87545, United States
Inst. Radiophysics and Electronics, Natl. Academy of Sciences of Ukraine, 12 Acad Proskura Street, 310085, Kharkov, Ukraine
Kirensky Institute of Physics, 660036, Krasnoyarsk, Russian Federation
Department of Physics, Univ. Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, IL 61801-3080, United States

Доп.точки доступа:
Aronov, I. E.; Berman, G. P.; Campbell, D. K.; Dudiy, S. V.
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3.


   
    Magnetic capacitance of the GdxBi1-xFeO3 thin films / S. S. Aplesnin [et al.] // Phys. Solid State. - 2017. - Vol. 59, Is. 4. - P. 667-673, DOI 10.1134/S1063783417040047. - Cited References:19. - This study was supported by the Russian Foundation for Basic Research, projects nos. 15-42-04099 r_sibir'_a, 16-52-00045 Bel_a, and 16-42-240436 r_a and the state order no. 114090470016. . - ISSN 1063-7834. - ISSN 1090-6460
РУБ Physics, Condensed Matter
Рубрики:
BiFeO3
   Domains

Аннотация: The capacitance, inductance, and dissipation factor of the GdxBi1–xFeO3 films were measured in the temperature range of 100 K T 800 K in magnetic fields of up to 8 kOe at frequencies of 0.1–100 kHz. The magnetic susceptibility maxima in the low-temperature region and dependences of the relaxation time and inductance on prehistory of the films cooled in zero and nonzero magnetic fields are established. The giant increase in magnetic capacitance in the external bias electric field is found. The results obtained are explained by the domain structure transformation in external electric and magnetic fields.

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Публикация на русском языке Магнитоемкость тонких пленок GdxBi1-xFeO3 [Текст] / С. С. Аплеснин [и др.] // Физ. тверд. тела : Наука, 2017. - Т. 59 Вып. 4. - С. 653-659

Держатели документа:
Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia.
Russian Acad Sci, Kirensky Inst Phys, Siberian Branch, Fed Res Ctr, Krasnoyarsk 660036, Russia.
Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, Minsk 220072, Byelarus.

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Kretinin, V. V.; Panasevich, A. M.; Yanushkevich, K. I.; Russian Foundation for Basic Research [15-42-04099 r_sibir'_a, 16-52-00045 Bel_a, 16-42-240436 r_a]; [114090470016]
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4.


   
    Capacitance dilatometer for small deformations measurements caused by external magnetic and electric fields and temperature / A. L. Freydman [et al.] // Moscow International Symposium on Magnetism (MISM-2017) : 1-7 July 2017 : book of abstracts. - 2017. - Ст. 5PO-I2-2. - P. 1047

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Доп.точки доступа:
Freydman, A. L.; Фрейдман, Александр Леонидович; Popkov, S. I.; Попков, Сергей Иванович; Krasikov, A. A.; Красиков, Александр Александрович; Mikhashenok, N. V.; Михашенок, Наталья Владимировна; Moscow International Symposium on Magnetism(7 ; 2017 ; Jul. ; Moscow); Московский государственный университет им. М.В. Ломоносова; Российский фонд фундаментальных исследований
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5.


   
    Influence of cation substitution on dielectric and electric properties of bismuth stannates Bi2Sn1.9Meo.1O7 (Me=Cr, Mn) / S. S. Aplesnin [et al.] // IOP Conf. Ser.: Mater. Sci. Eng. : IOP, 2019. - Vol. 467: 21st International Scientific Conference Reshetnev Readings 2017 (8 November 2018 through 8 November 2018) Conference code: 144163, Is. 1, DOI 10.1088/1757-899X/467/1/012014. - Cited References: 9. - This study was supported by the Russian Foundation for Basic Research project N 17-32-50080, the state order № 3.5743.2017/6.7.
Кл.слова (ненормированные):
Activation energy -- Capacitance -- Chromium -- Current voltage characteristics -- Dielectric losses -- Ions -- Manganese
Аннотация: The article studies effect of nonstoichiometric substitution of the tin ions by chromium and manganese ions on the dielectric and electrical properties of bismuth pyrostannate. The research performs measurements of the current-voltage characteristics, capacitance and tangent of the dielectric loss angle in the temperature range from 300 to 800 K; it finds a qualitative difference in the temperature behavior of the permittivity of bismuth pyrostannate with chromium and manganese ions. A change in the type of conductivity from hopping to tunneling emission is established. The change in the activation energy as a function of the ion radius is found.

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Держатели документа:
Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation
Federal Research Center Krasnoyarsk Science Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Aplesnin, S. S.; Аплеснин, Сергей Степанович; Udod, L. V.; Удод, Любовь Викторовна; Loginov, Y. Y.; Kretinin, V. V.; Masyugin, A. N.; International Scientific Conference Reshetnev Readings 2017(21st ; 8 November 2018 ; Krasnoyarsk, Russian Federation)
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6.


    Aplesnin, S. S.
    Magnetic capacitance in variable-valence manganese sulfides / S. S. Aplesnin, A. M. Kharkov, G. Y. Filipson // Phys. Status Solidi B. - 2020. - Vol. 257, Is. 5. - Ст. 1900637, DOI 10.1002/pssb.201900637. - Cited References: 12. - This study was supported by the Russian Foundation for Basic Research No. 18-32-00079 mol_a. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science No. 18-42-240001 r_a . - ISSN 0370-1972
Кл.слова (ненормированные):
Debye model -- infrared spectroscopy -- magnetocapacitance -- permittivity -- relaxation time
Аннотация: The permittivity of TmxMn1–xS (0 < x < 0.15) solid solutions is measured in the frequency range of 102–106 Hz at temperatures of 300–500 K in magnetic fields of up to 12 kOe. The migration and relaxation conductivity contributions to the electric polarization are established. The relaxation time and activation energy are calculated using the Debye model. A decrease in the capacitance and relaxation time in a magnetic field is observed. The electron polarization relaxation channel provided by recombination of the electron–hole pairs is found using the infrared spectroscopy investigations.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50 bld. 38, Krasnoyarsk, 660036, Russian Federation
Institute of Space Technology, Reshetnev Siberian State University of Science and Technology, Krasnoyarskiy rabochiy Ave., 31, Krasnoyarsk, 660037, Russian Federation

Доп.точки доступа:
Kharkov, A. M.; Filipson, G. Y.; Аплеснин, Сергей Степанович
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