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    Cell growth and accumulation of polyhydroxyalkanoates from CO2 and H2 of a hydrogen-oxidizing bacterium, Cupriavidus eutrophus B-10646 / T. G. Volova [et al.] // Bioresource Technol. - 2013. - Vol. 146. - P. 215-222, DOI 10.1016/j.biortech.2013.07.070 . - ISSN 0960-8524
   Перевод заглавия: Рост клеток и накопление полигидроксиалканоатов из CO2 и H2 водород-окисляющими бактериями, Cupriavidus eutrophus B-10646
Кл.слова (ненормированные):
Autotrophic synthesis -- Cupriavidus eutrophus -- Polyhydroxyalkanoates
Аннотация: Synthesis of polyhydroxyalkanoates (PHAs) by a new strain of Cupriavidus - Cupriavidus eutrophus B-10646 - was investigated under autotrophic growth conditions. Under chemostat, at the specific flow rate D=0.1h-1, on sole carbon substrate (CO2), with nitrogen, sulfur, phosphorus, potassium, and manganese used as growth limiting elements, the highest poly(3-hydroxybutyrate) [P(3HB)] yields were obtained under nitrogen deficiency. In batch autotrophic culture, in the fermenter with oxygen mass transfer coefficient 0.460h-1, P(3HB) yields reached 85% of dry cell weight (DCW) and DCW reached 50g/l. Concentrations of supplementary PHA precursor substrates (valerate, hexanoate, ?-butyrolactone) and culture conditions were varied to produce, for the first time under autotrophic growth conditions, PHA ter- and tetra-polymers with widely varying major fractions of 3-hydroxybutyrate, 4-hydroxybutyrate, 3-hydroxyvalerate, and 3-hydroxyhexanoate monomer units. Investigation of the high-purity PHA specimens showed significant differences in their physicochemical and physicomechanical properties. В© 2013 Elsevier Ltd.

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Держатели документа:
Russian Acad Sci, Inst Biophys, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk, Russia
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660036, Russia;

Доп.точки доступа:
Volova, T. G.; Волова, Татьяна Григорьевна; Kiselev, E. G.; Киселев, Евгений Геннадьевич; Shishatskaya, E. I.; Шишацкая, Екатерина Игоревна; Zhila, N. O.; Жила, Наталья Олеговна; Boyandin, A. N.; Бояндин, Анатолий Николаевич; Syrvacheva, D. A.; Vinogradova, O. N.; Kalacheva, G. S.; Калачева, Галина Сергеевна; Vasiliev, A. D.; Васильев, Александр Дмитриевич; Peterson, I. V.; Петерсон, Иван Викторович
}
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Patrin, G. S.
Influence of semimetal spacer on magnetic properties in NiFe/Bi/NiFe trilayer films / G. S. Patrin, V. Y. Yakovchuk, D. A. Velikanov // Phys. Lett. A. - 2007. - Vol. 363, Is. 1-2. - P. 164-167, DOI 10.1016/j.physleta.2006.10.088. - Cited References: 19 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary
Рубрики:
BISMUTH
SYSTEM
Кл.слова (ненормированные):
semimetal spacer -- magnetization -- spin accumulation -- trilayer film -- Magnetization -- Semimetal spacer -- Spin accumulation -- Trilayer film
Аннотация: The results of experimental study of magnetic properties in permalloy/bismuth/permalloy trilayer films synthesized for the first time are presented. Measurements of magnetic field and temperature dependences of magnetization have shown that the interlayer coupling depends on bismuth spacer thickness. The dependence of saturation magnetization of the system on semimetal thickness has been found. Possible mechanisms responsible for the observed features of behavior are discussed. (c) 2006 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Krasnoyarsk 660041, Russia
ИФ СО РАН
L.V. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Krasnoyarsk State University, prospect Svobodny 79, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Yakovchuk, V. Y.; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Патрин, Геннадий Семёнович
}
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Spin accumulation effect in fabricated planar device based on epitaxial Fe3Si/p-Si structure / A. S. Tarasov [et al.] // International school/workshop on actual problems of condensed matter physics : Program. Book of abstracts / ed. S. G. Ovchinnikov. - Norilsk, 2018. - P. 24 . - ISBN 978-5-904603-08-3

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Доп.точки доступа:
Ovchinnikov, S. G. \ed.\; Овчинников, Сергей Геннадьевич; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Ovchinnikov, S. G.; Volkov, N. V.; Волков, Никита Валентинович; Federal Research Center KSC SB RAS; Kirensky Institute of Physics; Research Institute of Agriculture and Ecology of the Arctic; Siberian Federal Univercity
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Room temperature spin accumulation effect in boron doped Si created by epitaxial Fe3Si/p-Si Schottky contact / A. S. Tarasov [et al.] // J. Surf. Ingestig. - 2018. - Vol. 12, Is. 4. - P. 633-637, DOI 10.1134/S1027451018040171. - Cited References: 33. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 16-42-243046, 16-42-242036 and 16-42-243060. . - ISSN 1027-4510. - ISSN 1819-7094

РУБ Physics, Condensed Matter
Рубрики:
HYBRID STRUCTURES
   CURRENT-VOLTAGE
   FILMS
   TRANSPORT
   SILICON
Кл.слова (ненормированные):
spintronics -- hybrid structures -- Schottky diode -- Hanle effect -- spin -- accumulation
Аннотация: To study spin-dependent transport phenomena in Fe3Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. IaEuro'V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe3Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe3Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Bondarev, I. A.; Бондарев, Илья Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, I. A.; Тарасов, Иван Анатольевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243046, 16-42-242036, 16-42-243060]
}
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    Spin-dependent electrical hole extraction from low doped p-Si via the interface states in a Fe3Si/p-Si structure / A. S. Tarasov [et al.] // Semicond. Sci. Technol. - 2019. - Vol. 34, Is. 3. - Ст. 035024, DOI 10.1088/1361-6641/ab0327. - Cited References: 56. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund by project. 18-42-243022 and supported in part by the Russian Foundation for Basic Research by project no. 18-32-00035. The work was partially supported by the Ministry of Education and Science of the Russian Federation and by Siberian Branch of the Russian Academy of Sciences (Project II.8.70) and Fundamental research program of the Presidium of the RAS no. 32 "Nanostructures: physics, chemistry, biology, basics of technologies" . - ISSN 0268-1242. - ISSN 1361-6641
   Перевод заглавия: Спин-зависимая электрическая экстракция дырок из низколегированного p-Si через интерфейсные состояния в структуре Fe3Si/p-Si

РУБ Engineering, Electrical & Electronic + Materials Science, Multidisciplinary + Physics, Condensed Matter
Рубрики:
ALLOYS
Кл.слова (ненормированные):
spin accumulation -- interface states -- hybrid structures -- Hanle effect -- iron silicide
Аннотация: Spin accumulation effect in Fe3Si/p-Si structure with low boron doped silicon substrate was found. Calculated spin lifetimes are comparable with results reported earlier but for structures with highly doped semiconductors (SC) with or without a tunnel barrier introduced between the SC and ferromagnet (FM). Electrical characterization of a prepared Fe3Si/p-Si diode allowed the determination of possible reasons for the pronounced spin signal. Analysis of the forward bias I-V curve revealed a Schottky barrier at the Fe3Si/p-Si interface with a height of φBp = 0.57 eV. Then, using impedance spectroscopy, we observed interface states localized in the band gap of silicon with energy of E LS = 40 meV. Such states most probably cause the observed spin signal. We believe that in our experiment, spin-dependent hole extraction was performed via the interface states resulting in the minority spin accumulation in the silicon valence band. The observed effect paves the way to the development of different spintronic devices based on FM/SC structures without dielectric tunneling barriers.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Baron, F. A.; Барон, Филипп Алексеевич; Volkov, N. V.; Волков, Никита Валентинович; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [18-42-243022]; Russian Foundation for Basic Research [18-32-00035]; Ministry of Education and Science of the Russian Federation; Siberian Branch of the Russian Academy of Sciences [II.8.70]; Fundamental research program of the Presidium of the RAS [32]
}
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Effects of magnetic field on the source current of deep-submicron MOSFET baised at accumulation / F. A. Baron [et al.] // Workshop "Trends in Nanomechanics and Nanoengineering" : book of abstracts / предс. сем. K. S. Aleksandrov ; зам. предс. сем.: G. S. Patrin, S. G. Ovchinnikov ; чл. лок. ком.: N. N. Kosyrev, A. S. Fedorov [et al]. - 2009. - P. 20

Материалы семинара

Доп.точки доступа:
Aleksandrov, K. S. \предс. сем.\; Александров, Кирилл Сергеевич; Patrin, G. S. \зам. предс. сем.\; Патрин, Геннадий Семёнович; Ovchinnikov, S. G. \зам. предс. сем.\; Овчинников, Сергей Геннадьевич; Kosyrev, N. N. \чл. лок. ком.\; Косырев, Николай Николаевич; Fedorov, A. S. \чл. лок. ком.\; Федоров, Александр Семенович; Baron, F. A.; Барон, Филипп Алексеевич; Ovchinnikov, S. G.; Jiang, H.-W.; Wang, K. L.; "Trends in Nanomechanics and Nanoengineering", workshop(2009 ; Aug. ; 24-28 ; Krasnoyarsk); Сибирский федеральный университет; Институт физики им. Л.В. Киренского Сибирского отделения РАН
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    Magnetotransport phenomena and spin accumulation in MIS structures / N. V. Volkov [et al.] // J. Phys.: Conf. Ser. - 2019. - Vol. 1347, Is. 1. - Ст. 012006, DOI 10.1088/1742-6596/1347/1/012006. - Cited References: 32. - The reported study was funded by Russian Foundation for Basic Research, project No 17-02-00302. . - ISSN 1742-6588. - ISSN 1742-6596
   Перевод заглавия: Магнитотранспортные эффекты и спиновая аккумуляция в МДП структурах

РУБ Functional materials

Аннотация: The present work is devoted to magnetic transport in Fe/SiO2/p-Si, Mn/SiO2/p-Si and Fe3Si/p-Si hybrid structure. For Mn/SiO2/p-Si diode extremely large values of magnetoresistance were observed (105 % for AC and 107 % for DC) which is explained by impact ionization process that can be suppressed by the magnetic field. Lateral photovoltaic effect in Fe/SiO2/p-Si have also shown a strong dependence on the magnetic field in low-temperature region (the relative change of photovoltage exceeded 103 %). In Fe3Si/p-Si spin accumulation was found via 3-terminal Hanle measurements. We believe that the magnetic field affects electric transport through Lorentz force and through the interface states which are localized at the insulator/semiconductor or metal/semiconductor interfaces. Such states play a decisive role in magnetotrasnport as their energy can be controlled by a magnetic field. In Fe3Si/p-Si they also participate in spin-dependent tunneling, causing spin injection from the Fe3Si film into the silicon.

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Держатели документа:
Kirensky Institute of physics of the Krasnoyarsk Scientific Center of the Siberian Branch of the Russian Academy of Sciences, 660036, Krasnoyarsk, Russia
Institute of engineering physics and radio electronics, Siberian Federal University, 660041, Krasnoyarsk, Russia

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Bondarev, I. A.; Бондарев, Илья Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International Russian-Chinese Symposium "New Materials and Technologies"(XV ; 16-19 October 2019 ; Sochi, Russian Federation)
}
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Spin accumulation in the Fe3Si/n-Si epitaxial structure and related electric bias effect / A. S. Tarasov, A. V. Luk'yanenko, I. A. Bondarev [et al.] // Tech. Phys. Lett. - 2020. - Vol. 46, Is. 7. - P. 665-668, DOI 10.1134/S1063785020070135. - Cited References: 17. - This study was supported by the Russian Foundation for Basic Research, the Government of Krasnoyarsk krai, and the Krasnoyarsk Territorial Foundation for Support of Scientific and R&D Activities (project no. 18-42-243022), and a Grant of the Government of the Russian Federation for Creation of World Level Laboratories (agreement no. 075-15-2019-1886) . - ISSN 1063-7850. - ISSN 1090-6533

РУБ Physics, Applied
Рубрики:
TRANSPORT
Кл.слова (ненормированные):
iron silicide -- ferromagnet/semiconductor structures -- Hanle effect -- spin accumulation -- electric spin injection
Аннотация: The electrical injection of the spin-polarized current into silicon in the Fe3Si/n-Si epitaxial structure is demonstrated. The spin accumulation effect is examined by measuring the local and nonlocal voltage in a special four-terminal device. The observed effect of the electric bias on the spin signal is discussed and compared with the results obtained for ferromagnet/semiconductor structures.

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Публикация на русском языке Эффект спиновой аккумуляции в эпитаксиальной структуре Fe3Si/n-Si и влияние на него электрического смещения [Текст] / А. С. Тарасов, А. В. Лукьяненко, И. А. Бондарев [и др.] // Письма в Журн. техн. физ. - 2020. - Т. 46 № 13. - С. 43-46

Держатели документа:
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Luk'yanenko, A. V.; Лукьяненко, Анна Витальевна; Bondarev, I. A.; Бондарев, Илья Александрович; Yakovlev, I. A.; Яковлев, Иван Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk krai; Krasnoyarsk Territorial Foundation [18-42-243022]; Grant of the Government of the Russian Federation for Creation of World Level Laboratories [075-15-2019-1886]
}
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Electron charge accumulation by island surfaces of Cr-Mn based MAX phase thin films on MgO / T. A. Andryushchenko, S. A. Lyashchenko, S. N. Varnakov [et al.] // V International Baltic Conference on Magnetism. IBCM : Book of abstracts. - 2023. - P. 129. - Cited References: 2. - РФН № 21-12-00226

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Federal Research Center KSC SB RAS
Siberian Federal University

Доп.точки доступа:
Andryushchenko, T. A.; Lyashchenko, S. A.; Лященко, Сергей Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Shvetsov, D. V.; Yakovlev, I. A.; Яковлев, Иван Александрович; International Baltic Conference on Magnetism(5 ; 2023 ; Aug. 20-24 ; Svetlogorsk, Russia); Балтийский федеральный университет им. И. Канта
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