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Exchange percolation effects in magnetization curves of granular nanolayer / V. A. Felk [и др.] // Moscow Int. Symp. on Magnet. (MISM-2017) : 1-7 July 2017 : book of abstracts. - 2017. - Ст. 2PO-J-31. - P. 284. - Cited References: 2

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Доп.точки доступа:
Felk, V. A.; Iskhakov, R. S.; Исхаков, Рауф Садыкович; Komogortsev, S. V.; Комогорцев, Сергей Викторович; Shadrina, G. V.; Moscow International Symposium on Magnetism(7 ; 2017 ; Jul. ; Moscow); Московский государственный университет им. М.В. Ломоносова; Российский фонд фундаментальных исследований
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    Solid-state reaction in Cu/a-Si nanolayers: A comparative study of STA and electron diffraction data / E. T. Moiseenko, V. V. Yumashev, R. R. Altunin [и др.] // Materials. - 2022. - Vol. 15, Is. 23. - Ст. 8457, DOI 10.3390/ma15238457. - Cited References: 45. - This work was supported by the Russian Science Foundation under grant # 22-13-00313 . - ISSN 1996-1944
   Перевод заглавия: Твердофазная реакция в нанослоях Cu/a-Si: сравнительное исследование данных, полученных методами СТА и дифракции электронов
Кл.слова (ненормированные):
copper silicide -- thin films -- nanolayer -- solid-state reaction -- phase formation -- kinetics -- activation energy -- enthalpy -- DSC -- electron diffraction
Аннотация: The kinetics of the solid-state reaction between nanolayers of polycrystalline copper and amorphous silicon (a-Si) has been studied in a Cu/a-Si thin-film system by the methods of electron diffraction and simultaneous thermal analysis (STA), including the methods of differential scanning calorimetry (DSC) and thermogravimetry (TG). It has been established that, in the solid-state reaction, two phases are formed in a sequence: Cu + Si → η″-Cu3Si → γ-Cu5Si. It has been shown that the estimated values of the kinetic parameters of the formation processes for the phases η″-Cu3Si and γ-Cu5Si, obtained using electron diffraction, are in good agreement with those obtained by DSC. The formation enthalpy of the phases η″-Cu3Si and γ-Cu5Si has been estimated to be: ΔHη″-Cu3Si = −12.4 ± 0.2 kJ/mol; ΔHγ-Cu5Si = −8.4 ± 0.4 kJ/mol. As a result of the model description of the thermo-analytical data, it has been found that the process of solid-state transformations in the Cu/a-Si thin-film system under study is best described by a four-stage kinetic model R3 → R3 → (Cn-X) → (Cn-X). The kinetic parameters of formation of the η″-Cu3Si phase are the following: Ea = 199.9 kJ/mol, log(A, s−1) = 20.5, n = 1.7; and for the γ-Cu5Si phase: Ea = 149.7 kJ/mol, log(A, s−1) = 10.4, n = 1.3, with the kinetic parameters of formation of the γ-Cu5Si phase being determined for the first time.

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Держатели документа:
Laboratory of Electron Microscopy, Siberian Federal University, 79 Svobodny Ave., 660041 Krasnoyarsk, Russia
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Akademgorodok 50/24, 660036 Krasnoyarsk, Russia
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Akademgorodok 50/38, 660036 Krasnoyarsk, Russia

Доп.точки доступа:
Moiseenko, E. T.; Yumashev, V. V.; Altunin, R. R.; Zeer, G. M.; Nikolaeva, N. S.; Belousov, O. V.; Zharkov, S. M.; Жарков, Сергей Михайлович
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    Thermokinetic study of aluminum-induced crystallization of a-Si: The effect of Al layer thickness / S. M. Zharkov, V. V. Yumashev, E. T. Moiseenko [et al.] // Nanomaterials. - 2023. - Vol. 13, Is. 22. - Ст. 2925, DOI 10.3390/nano13222925. - Cited References: 70. - This work was supported by the Russian Science Foundation under grant #22-13-00313 . - ISSN 2079-4991
   Перевод заглавия: Термокинетическое исследование кристаллизации a-Si, индуцированной алюминием: влияние толщины слоя Al
Кл.слова (ненормированные):
amorphous silicon -- Al/Si -- nanolayer -- multilayer film -- metal-induced crystallization -- aluminum-induced crystallization -- kinetics -- activation energy -- enthalpy -- simultaneous thermal analysis (STA)
Аннотация: The effect of the aluminum layer on the kinetics and mechanism of aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) in (Al/a-Si)n multilayered films was studied using a complex of in situ methods (simultaneous thermal analysis, transmission electron microscopy, electron diffraction, and four-point probe resistance measurement) and ex situ methods (X-ray diffraction and optical microscopy). An increase in the thickness of the aluminum layer from 10 to 80 nm was found to result in a decrease in the value of the apparent activation energy Ea of silicon crystallization from 137 to 117 kJ/mol (as estimated by the Kissinger method) as well as an increase in the crystallization heat from 12.3 to 16.0 kJ/(mol Si). The detailed kinetic analysis showed that the change in the thickness of an individual Al layer could lead to a qualitative change in the mechanism of aluminum-induced silicon crystallization: with the thickness of Al ≤ 20 nm. The process followed two parallel routes described by the n-th order reaction equation with autocatalysis (Cn-X) and the Avrami–Erofeev equation (An): with an increase in the thickness of Al ≥ 40 nm, the process occurred in two consecutive steps. The first one can be described by the n-th order reaction equation with autocatalysis (Cn-X), and the second one can be described by the n-th order reaction equation (Fn). The change in the mechanism of amorphous silicon crystallization was assumed to be due to the influence of the degree of Al defects at the initial state on the kinetics of the crystallization process.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
Laboratory of Electron Microscopy, Siberian Federal University, Krasnoyarsk 660041, Russia
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Zharkov, S. M.; Жарков, Сергей Михайлович; Yumashev, V. V.; Moiseenko, E. T.; Altunin, R. R.; Solovyov, L. A.; Volochaev, M. N.; Волочаев, Михаил Николаевич; Zeer, G. M.; Nikolaeva, N. S.; Belousov, O. V.
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