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    Chepkasov, I. V.
    Analysis of thermal effects on copper nanoparticles synthesized from the gas phase / I. V. Chepkasov, Z. I. Popov // IOP Conf. Ser.: Mater. Sci. Eng. - 2015. - Vol. 81. - Ст. 012033, DOI 10.1088/1757-899X/81/1/012033. - Cited References:14
Рубрики:
DEVICES
   FILMS
Аннотация: Molecular dynamics method using the tight-binding potential to carry out simulation of ultrafast heating of the synthesized particles from the gas phase to a temperature T= 600K and T= 900K, at which the particles were kept about 10 ns. As a result of the simulation revealed that the method of ultrafast heating the particles to high temperatures virtually eliminates the possibility of a clusters of defective education, but as a result of the heat treatment, the some of investigated particles can disconnect (burst) into smaller clusters.

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Доп.точки доступа:
Popov, Z. I.; Попов, Захар Иванович; International Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials (Nov 03-08, 2014 ; Tomsk, Russia); International scientific conference on radiation-thermal effects and processes in inorganic materials(2015)
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Fransson, J.
Effects of nonorthogonality in the time-dependent current through tunnel junctions / J. . Fransson, O. . Eriksson, I. . Sandalov // Phys. Rev. B. - 2001. - Vol. 64, Is. 15. - Ст. 153403, DOI 10.1103/PhysRevB.64.153403. - Cited References: 20 . - ISSN 0163-1829

РУБ Physics, Condensed Matter
Рубрики:
LOCAL OXIDATION
TRANSPORT
DEVICES
Аннотация: A theoretical technique which allows one to include contributions from nonorthogonality of the electron states in the leads connected to a tunneling junction is derived. The theory is applied to a single-barrier, tunneling structure and a simple expression for the time-dependent tunneling current is derived showing explicit dependence of the overlap. The overlap proves to be necessary for a better quantitative description of the tunneling current, and our theory reproduces experimental results substantially better compared to standard approaches.

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Держатели документа:
Univ Uppsala, Condensed Matter Theory Grp, S-75121 Uppsala, Sweden
Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Eriksson, O.; Sandalov, I. S.; Сандалов, Игорь Семёнович
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Aver'yanov, E. M.
Influence of the dimension of a polycrystalline film and the optical anisotropy of crystallites on the effective dielectric constant of the film / E. M. Aver’yanov // Phys. Solid State. - 2016. - Vol. 58, Is. 8. - P. 1634-1641, DOI 10.1134/S1063783416080035. - Cited References: 41 . - ISSN 1063-7834

РУБ Physics, Condensed Matter
Рубрики:
EFFECTIVE REFRACTIVE-INDEX
   CONJUGATED POLYMER
   POLY(P-PHENYLENE VINYLENE)
   SPECTROSCOPIC ELLIPSOMETRY
   ELECTRICAL-CONDUCTIVITY
   LOCAL-FIELD
   THIN-FILMS
   DISPERSION
   POLYFLUORENE
   DEVICES
Аннотация: The dimension D of a polycrystalline film and the optical anisotropy m = εz/εx of uniaxial crystallites with the principal components εx = εy and εz of the tensor of the dielectric constant have been shown to produce a strong influence on the effective dielectric constant εD* and the effective refractive index nD* = (εD*)1/2 of the film in the optical transparency region, as well as on the boundaries of the intervals BDl ≤ εD* ≤ BDu. The intervals Δ2(m) = B2l–B2u and Δ3(m) = B3l–B3u are separated by a gap for m in the range 1 m 2, whereas the theoretical dependence ε2*(m) is separated by a gap from the interval Δ3(m) for m in the range 1 m 4. This is confirmed by a comparison of the experimental (noP) and theoretical (nD*) ordinary refractive indices for uniaxial polycrystalline films of the conjugated polymer poly(p-phenylene vinylene) (PPV) with uniaxial crystallites and appropriate values of m. In the visible transparency region of the PPV films with a change in m(λ) in the range 2 m(λ) 3 due to the dependence of the components εx,z(λ) on the light wavelength λ, the refractive indices noP2(λ) 3 near the electronic absorption band of the crystallites, the values of εoP(λ) lie in the region of the overlap of the intervals Δ2(m) and Δ3(m). The boundaries mc of the range 1 m mc are determined, for which the interval Δ2(m) is separated by a gap from the dependences ε3*(m) corresponding to the effective medium theory with spherical crystallites and hierarchical models of a polycrystal, as well as from the proposed new dependence ε3*(m).

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Публикация на русском языке Аверьянов, Евгений Михайлович. Влияние размерности поликристаллической пленки и оптической анизотропии кристаллитов на эффективную диэлектрическую проницаемость пленки [Текст] / Е. М. Аверьянов // Физ. тверд. тела : Физико-технический институт им. А. Ф. Иоффе РАН, 2016. - Т. 58 Вып. 8. - С. 1580–1586

Доп.точки доступа:
Аверьянов, Евгений Михайлович
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Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties / A. S. Tarasov, I. A. Tarasov, I. A. Yakovlev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст. 131, DOI 10.3390/nano12010131. - Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991

РУБ Chemistry, Multidisciplinary + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
FILMS
   ANISOTROPY
   SI(001)
   DEVICES
   SURFACE
   GROWTH
Кл.слова (ненормированные):
iron silicide -- germanium -- molecular beam epitaxy -- epitaxial stress -- lattice distortion -- dislocation lattices -- FMR -- Rutherford backscattering -- spintronics
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
RAS, Boreskov Inst Catalysis SB, Synchrotron Radiat Facil SKIF, Nikolskiy Prospekt 1, Koltsov 630559, Russia.
Immanuel Kant Balt Fed Univ, REC Smart Mat & Biomed Applicat, Kaliningrad 236041, Russia.
Immanuel Kant Balt Fed Univ, REC Funct Nanomat, Kaliningrad 236016, Russia.
Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany.
Univ Duisburg Essen, Ctr Nanointegrat, D-47057 Duisburg, Germany.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, Dmitriy D.; Goikhman, Aleksandr Yu.; Belyaev, B. A.; Беляев, Борис Афанасьевич; Baron, F. A.; Барон, Филипп Алексеевич; Shanidze, Lev V.; Шанидзе, Лев Викторович; Farle, M.; Фарле, Михаель; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
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