Библиотека института физики им. Л.В. Киренского СО РАН

Главная

Базы данных

Труды сотрудников ИФ СО РАН - результаты поиска

Вид поиска

Каталог книг и брошюр библиотеки ИФ СО РАН

Каталог журналов библиотеки ИФ СО РАН

Труды сотрудников ИФ СО РАН

Область поиска

Формат представления найденных документов:
полный	информационный	краткий

Отсортировать найденные документы по:
автору	заглавию	году издания	типу документа

Поисковый запрос: (<.>S=GAAS<.>)

Общее количество найденных документов : 4
Показаны документы с 1 по 4

Solid-state formation of ferromagnetic δ-Mn0.6Ga0.4 thin films with high rotatable uniaxial anisotropy / V. G. Myagkov [et al.] // Phys. Status Solidi B. - 2012. - Vol. 249, Is. 8. - P. 1541-1545, DOI 10.1002/pssb.201248064. - Cited References: 39 . - ISSN 0370-1972

РУБ Physics, Condensed Matter
Рубрики:
EPITAXIAL-GROWTH
   PERPENDICULAR ANISOTROPY
   MAGNETIC-PROPERTIES
   PHASE-FORMATION
   GAAS
   GAN
Кл.слова (ненормированные):
high anisotropy constants -- MnxGa1-x alloys -- rotatable magnetic anisotropies -- thin films
Аннотация: Solid-state reactions in Ga/Mn polycrystalline films of the composition 1 Ga:3 Mn were experimentally investigated. Our X-ray study showed that the formation of the Ga/Mn → (250 °C) ϕ-Ga7.7Mn2.3 → (350 °C) δ-Mn0.6Ga0.4 phase sequence occurs when the annealing temperature is increased to 400 °C. δ-Mn0.6Ga0.4 samples were found to have high rotatable uniaxial anisotropy. We also showed that magnetic fields with coercivities above H > HC = 8.3 kOe can be used to orient the easy anisotropy axis in any spatial direction while taking the angle of the lag into account.

Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ
Держатели документа:
[Myagkov, V. G.
Zhigalov, V. S.
Bykova, L. E.
Patrin, G. S.
Velikanov, D. A.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Myagkov, V. G.
Zhigalov, V. S.] Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
[Bondarenko, G. N.
Mikhlin, Yu. L.] Russian Acad Sci, Siberian Branch, Inst Chem & Chem Technol, Krasnoyarsk 660049, Russia
[Patrin, G. S.
Velikanov, D. A.] Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Myagkov, V. G.; Мягков, Виктор Григорьевич; Zhigalov, V. S.; Жигалов, Виктор Степанович; Bykova, L. E.; Быкова, Людмила Евгеньевна; Bondarenko, G. N.; Бондаренко, Галина Николаевна; Mikhlin, Y. L.; Patrin, G. S.; Патрин, Геннадий Семёнович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич
}
Найти похожие

Alekseev, K. N.
Direct-current generation due to wave mixing in semiconductors / K. N. Alekseev, M. V. Erementchouk, F. V. Kusmartsev // Europhys. Lett. - 1999. - Vol. 47, Is. 5. - P. 595-600, DOI 10.1209/epl/i1999-00430-0. - Cited References: 34 . - ISSN 0295-5075

РУБ Physics, Multidisciplinary
Рубрики:
BLOCH OSCILLATOR
   SUPERLATTICES
   PHOTOCURRENT
   TRANSPORT
   FREQUENCY
   FIELD
   RECTIFIERS
   EMISSION
   CHAOS
   GAAS
Аннотация: We describe an effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow-gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.

WOS,
Scopus,
Читать в сети ИФ
Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Loughborough Univ Technol, Sch Math & Phys Sci, Loughborough LE11 3TU, Leics, England
Russian Acad Sci, LD Landau Theoret Phys Inst, Chernogolovka 142432, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Sch. of Math. and Physical Sciences, Loughborough University, Loughborough LE11 3TU, United Kingdom
Landau Inst. for Theoretical Physics, Russian Academy of Sciences, Moscow 142432, Russian Federation

Доп.точки доступа:
Erementchouk, M. V.; Kusmartsev, F. V.
}
Найти похожие

Structural and Magnetic Properties of the Al2O3/Ge-p/Al2O3/Co System / A. V. Kobyakov [et al.] // Tech. Phys. - 2019. - Vol. 64, Is. 2. - P. 236-241, DOI 10.1134/S1063784219020087. - Cited References: 18. - This study was supported by the Russian Foundation for Basic Research, project no. 18-02-00161-a. . - ISSN 1063-7842. - ISSN 1090-6525

РУБ Physics, Applied
Рубрики:
LAYER-DEPOSITED AL2O3
MAGNETORESISTANCE
GAAS
Аннотация: The Al2O3/Ge-p/Al2O3/Co system with an Al2O3 buffer layer deposited by ion-plasma sputtering has been experimentally investigated. The dependences of the magnetic properties of cobalt on the rate of its deposition by ion-plasma sputtering and rate of deposition of preceding layers have been established. It is shown that the technique used to obtain buffer layers can significantly reduce the surface roughness of the next layers. The obtained buffer layers can be used as artificial substrates for growing heterostructures with tunnel junctions.

Смотреть статью,
Scopus,
WoS,
Читать в сети ИФ

Публикация на русском языке Структурные и магнитные свойства систем Al2O3/Ge-p/Al2O3/Co [Текст] / А. В. Кобяков [и др.] // Журн. техн. физ. - 2019. - Т. 89 Вып. 2. - С. 268-273

Держатели документа:
Siberian Fed Univ, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Kirensky Inst Phys, Fed Res Ctr, Krasnoyarsk Sci Ctr,Siberian Branch, Krasnoyarsk 660036, Russia.
Krasnoyarsk State Agrarian Univ, Achinsk Branch, Krasnoyarsk 662150, Krasnoyarsk Kra, Russia.

Доп.точки доступа:
Kobyakov, A. V.; Кобяков, Александр Васильевич; Turpanov, I. A.; Турпанов, Игорь Александрович; Patrin, G. S.; Патрин, Геннадий Семёнович; Rudenko, R. Yu.; Руденко, Роман Юрьевич; Yushkov, V. I.; Юшков, Василий Иванович; Kosyrev, N. N.; Косырев, Николай Николаевич; Russian Foundation for Basic Research [18-02-00161-a]
}
Найти похожие

Reversal of uniaxial magnetic anisotropy in Fe/GaAs (110) films driven by surface relaxation: An in situ ferromagnetic resonance study / B. Bhagat, A. Semisalova, R. Meckenstock, M. Farle // AIP Adv. - 2020. - Vol. 10, Is. 7. - Ст. 075219, DOI 10.1063/5.0004261. - Cited References: 32. - This work was supported by Deutsche Forschungsgemeinschaft (DFG, German Research Foundation): Project Nos. RO 5030/2-1 and 405553726-TRR 270, and by the Government of the Russian Federation (Research Grant No. 075-15-2019-1886). The authors acknowledge Florian Romer for initial funding and training and are thankful to Benjamin Zingsem for helping in data fitting and to Ulf Wiedwald for AFM measurements. . - ISSN 2158-3226

РУБ Nanoscience & Nanotechnology + Materials Science, Multidisciplinary
Рубрики:
EPITAXIAL FE FILMS
   GAAS(001)
   GAAS
   RECONSTRUCTION
   LAYERS
Аннотация: We report an in situ study of the time evolution of magnetic anisotropy constants of an uncapped 4 nm [~ 27 monolayers (ML)] Fe film epitaxially grown on a GaAs (110) substrate at room temperature under ultra-high vacuum (UHV) conditions. The structural and chemical properties are monitored by low energy electron diffraction and Auger spectroscopy with a sensitivity of 0.01 ML. The in situ UHV ferromagnetic resonance (FMR) study over a period of 6 days in 10-9 Pa reveals that there is a slow magneto-morphological transition of the Fe film surface at room temperature. The resonance field measured in situ in the [110] direction initially changes at a rate of 0.3 mT/h within 30 h after deposition and later at 0.1 mT/h over 80 h. We determine the time-dependent changes in the in-plane and out-of-plane anisotropy constants and find a sign change in the uniaxial in-plane anisotropy in the first 24 h due to morphological changes at the surface. The in situ FMR measurements and the Auger analysis allow us to exclude changes in the magnetization and anisotropy due to the contamination and oxidation of the Fe film.

Смотреть статью,
Scopus,
WOS,
Читать в сети ИФ
Держатели документа:
Univ Duisburg Esssen, Ctr Nanointegrat, D-47057 Duisburg, Germany.
Univ Duisburg Esssen, Fac Phys, D-47057 Duisburg, Germany.
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Bhagat, Babli; Semisalova, Anna; Meckenstock, Ralf; Farle, M.; Фарле, Михаель; Deutsche Forschungsgemeinschaft (DFG, German Research Foundation)German Research Foundation (DFG) [RO 5030/2-1, 405553726-TRR 270]; Government of the Russian Federation [075-15-2019-1886]
}
Найти похожие