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Alekseev, K. N.
Direct-current generation due to wave mixing in semiconductors / K. N. Alekseev, M. V. Erementchouk, F. V. Kusmartsev // Europhys. Lett. - 1999. - Vol. 47, Is. 5. - P. 595-600, DOI 10.1209/epl/i1999-00430-0. - Cited References: 34 . - ISSN 0295-5075

РУБ Physics, Multidisciplinary
Рубрики:
BLOCH OSCILLATOR
   SUPERLATTICES
   PHOTOCURRENT
   TRANSPORT
   FREQUENCY
   FIELD
   RECTIFIERS
   EMISSION
   CHAOS
   GAAS
Аннотация: We describe an effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow-gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Loughborough Univ Technol, Sch Math & Phys Sci, Loughborough LE11 3TU, Leics, England
Russian Acad Sci, LD Landau Theoret Phys Inst, Chernogolovka 142432, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Sch. of Math. and Physical Sciences, Loughborough University, Loughborough LE11 3TU, United Kingdom
Landau Inst. for Theoretical Physics, Russian Academy of Sciences, Moscow 142432, Russian Federation

Доп.точки доступа:
Erementchouk, M. V.; Kusmartsev, F. V.
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