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Synthesis and magnetic states of cobalt in three-layer Co/Ge/Co films / G. S. Patrin [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 2. - P. 302-309, DOI 10.1134/S1063783414020255. - Cited References: 13. - This study was supported by the Russian Foundation for Basic Research (project no. 11-02-00675-a). . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
FERROMAGNETIC LAYER THICKNESS
   NANOSTRUCTURES
   BEHAVIOR
   SPACER
Аннотация: The magnetic properties of three-layer Co-Ge magnetic films have been studied experimentally as a function of technological conditions of their deposition. It has been found that the films deposited at a high deposition rate have a granular structure, and the films obtained at a low deposition rate have an X-ray amorphous structure. Electron microscopy and nuclear magnetic resonance studies have demonstrated that, at the same cobalt layer thickness, the semiconductor granule sizes depend on the average semiconductor layer thickness and correlate with the formation of different cobalt phases (amorphous, cubic, and hexagonal). The thermomagnetic properties of the films have been investigated. © 2014 Pleiades Publishing, Ltd.

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Публикация на русском языке Синтез и магнитные состояния кобальта в трехслойных пленках Co/Ge/Co [] / Г. С. Патрин [и др.] // Физ. тверд. тела : ФТИ РАН, 2014. - Т. 56 Вып. 2. - С. 301-307

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660074, Russia

Доп.точки доступа:
Patrin, G. S.; Патрин, Геннадий Семёнович; Turpanov, I. A.; Турпанов, Игорь Александрович; Kobyakov, A. V.; Кобяков, Александр Васильевич; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Patrin, K. G.; Патрин, Константин Геннадьевич; Li, L. A.; Ли, Людмила Алексеевна; Maltsev, V. K.; Мальцев, Вадим Константинович; Zharkov, S. M.; Жарков, Сергей Михайлович; Yushkov, V. I.; Юшков, Василий Иванович
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Synthesis of 6H-SiC single-crystal nanowires in a flow of carbon-silicon high-frequency arc plasma / G. A. Glushchenko [et al.] // Phys. Solid State. - 2014. - Vol. 56, Is. 10. - P. 2107-2111, DOI 10.1134/S106378341410014X. - Cited References: 34. - This study was supported by the National Academy of Sciences of Belarus and the Siberian Branch of the Russian Academy of Sciences within the framework of the Interdisciplinary Integration project no. 24. . - ISSN 1063-7834. - ISSN 1090-6460

РУБ Physics, Condensed Matter
Рубрики:
LARGE-SCALE SYNTHESIS
   BETA-SIC NANOWIRES
   FIELD-EMISSION PROPERTIES
   CARBIDE NANOWIRES
   NANORODS
   GROWTH
   NANOSTRUCTURES
   FULLERENES
   DISCHARGE
Аннотация: Silicon carbide 6H-SiC nanoparticles and nanowires were obtained in carbon-silicon high-frequency arc plasma plasma in a helium atmosphere at a pressure of 0.1-0.6 MPa. It was shown that 6H-SiC nanowires grow from the arc plasma, as well as from the vapor, according to the known mechanism of vapor-solid condensation on a cold surface covered with single-crystal silicon carbide nuclei. The content of silicon carbide nanowires in the condensate reached 60 wt %. The obtained single-crystal silicon 6H-SiC nanowires had the diameter of 15-18 nm and length of 200-600 nm.

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Публикация на русском языке Синтез монокристаллических нанопроволок 6H-SiC в потоке углеродно-кремниевой плазмы высокочастотной дуги [Текст] / Г. А. Глущенко [и др.] // Физ. тверд. тела. - 2014. - Т. 56 Вып. 10. - С. 2039-2043

Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Russian Acad Sci, Siberian Branch, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia

Доп.точки доступа:
Glushchenko, G. A.; Глущенко, Гарий Анатольевич; Leonova, T. A.; Kolonenko, A. L.; Колоненко, Андрей Леонидович; Dudnik, A. I.; Дудник, Александр Иванович; Osipova, I. V.; Осипова, Ирина Владимировна; Vnukova, N. G.; Внукова, Наталья Григорьевна; Nemtsev, I. V.; Немцев, Иван Васильевич; Zharkov, S. M.; Жарков, Сергей Михайлович; Churilov, G. N.; Чурилов, Григорий Николаевич
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    Effects of processing parameters on the morphology, structure, and magnetic properties of Cu1-xFexCr2Se4 nanoparticles synthesized with chemical methods / R. D. Ivantsov [et al.] // J. Alloys Compd. - 2015. - Vol. 650. - P. 887-895, DOI 10.1016/j.jallcom.2015.08.017. - Cited References: 36. - The paper was partially supported by the Russian Foundation for Basic Research (grant #14-02-01211), by the President of Russia (grant #NSh-2886.2014.2), and by the Ministry of Education and Science of the Russian Federation (grant #2014/71/1763 in the framework of the state assignment for the Siberian Federal University for 2014-2016). We also thank the Ministry of Science and Technology of Taiwan and the Siberian Branch of RAS (MOST 102-2112-M-153 -002 -MY3) for financial support. . - ISSN 0925-8388
   Перевод заглавия: Влияние параметров получения на морфологию, структуру и магнитные свойства наночастиц Cu1-xFexCr2Se4, синтезированных химическими методами

РУБ Chemistry, Physical + Materials Science, Multidisciplinary + Metallurgy & Metallurgical Engineering
Рубрики:
CuCr2Se4 SINGLE-CRYSTALS
   TRANSPORT-PROPERTIES
   CHROMIUM SPINELS
   NANOSTRUCTURES
   DIFFRACTION
   Li
Кл.слова (ненормированные):
Copper selenide -- Magnetic nanoparticles -- Visible magnetic circular dichroism
Аннотация: Cu1-xFexCr2Se4 nanoparticles with x = 0, 0.2, and 0.4 were synthesized via thermal decomposition of metal nitrate or chloride salts and selenium powder using different precursor compositions and processing details. Single crystalline nano-belts or nano-rods coexist in the synthesized powder samples with hexagon-shaped plates in dependence on the precursor composition. The belts gathered into conglomerates forming "hierarchical" particles. Visible magnetic circular dichroism (MCD) of Cu1-xFexCr2Se4 nanoparticles embedded into a transparent matrix was investigated for the first time. The similarity of the MCD spectra of all samples showed the similarity of the nanoparticles electronic structure independent of their morphology. Basing on the MCD spectral maxima characteristics, electron transitions from the ground to the excited states were identified with the help of the conventional band theory and the multi-electron approach. © 2015 Elsevier B.V.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk, Russian Federation
Siberian Federal University, Krasnoyarsk, Russian Federation
National Pingtung University, Pingtung City, Pingtung County, Taiwan

Доп.точки доступа:
Ivantsov, R. D.; Иванцов, Руслан Дмитриевич; Edelman, I. S.; Эдельман, Ирина Самсоновна; Zharkov, S. M.; Жарков, Сергей Михайлович; Velikanov, D. A.; Великанов, Дмитрий Анатольевич; Petrov, D. A.; Петров, Дмитрий Анатольевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Lin, C.-R.; Li, O.; Tseng, Y.-T.
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    Effect of magnetic and electric fields on the AC resistance of a silicon-on-insulator-based transistor-like device / D. Smolyakov, A. Tarasov, L. Shanidze [et al.] // Phys. Status Solidi A. - 2022. - Vol. 219. Is. 1. - Ст. 2100459, DOI 10.1002/pssa.202100459. - Cited References: 19. - The authors thank the Krasnoyarsk Territorial Center for Collective Use, Krasnoyarsk Scientific Center of the SB RAS, for electron microscope investigations. This study was supported by RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science, projects nos. 20-42-243007 and 20-42-240013, and by the Government of the Russian Federation, the Mega-grant for the Creation of Competitive World-Class Laboratories, agreement no. 075-15-2019-1886 . - ISSN 1862-6300. - ISSN 1862-6319
   Перевод заглавия: Влияние магнитного и электрического полей на сопротивление на переменном токе транзисторного устройства на основе кремния на изоляторе

РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
NANOSTRUCTURES
Кл.слова (ненормированные):
impurities states -- magnetoimpedance -- magnetoresistance -- pseudo-MOSFET -- semiconductors -- SOI structure -- transistor
Аннотация: Herein, the AC magnetoresistance (MR) in the silicon-on-insulator (SOI)-based Fe/Si/SiO2/p-Si structure is presented. The structure is used for fabricating a back-gate field-effect pseudo-metal-oxide-semiconductor field-effect transistor (MOSFET) device. The effects of the magnetic field and gate voltage on the transport characteristics of the device are investigated. Magnetoimpedance value of up to 100% is obtained due to recharging of the impurity and surface centers at the insulator/semiconductor interface. A resistance variation of up to 1000% is found, which is caused by the voltage applied to the gate and the field effect on the band structure of the sample. Combining the magnetic and electric fields, one can either change the absolute value of the AC resistance while having the MR fixed or change the sign and character of the field dependence of the MR. The observed effects can be used in the development of magnetic-field-driven SOI-based devices and high-frequency circuits.

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50,Bld 38, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Pr Svobodny 79, Krasnoyarsk 660041, Russia.
Russian Acad Sci, Krasnoyarsk Sci Ctr, Siberian Branch, Akademgorodok 50, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Shanidze, Lev; Шанидзе, Лев Викторович; Bondarev, I. A.; Бондарев, Илья Александрович; Baron, F. A.; Барон, Филипп Алексеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Volkov, N. V.; Волков, Никита Валентинович; RFBR, Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240013]; Government of the Russian Federation; Mega-grant for the Creation of Competitive World-Class Laboratories [075-15-2019-1886]
}
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