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Alekseev, K. N. Direct-current generation due to wave mixing in semiconductors / K. N. Alekseev, M. V. Erementchouk, F. V. Kusmartsev> // Europhys. Lett. - 1999. - Vol. 47, Is. 5. - P. 595-600, DOI 10.1209/epl/i1999-00430-0. - Cited References: 34
. - ISSN 0295-5075РУБ Physics, Multidisciplinary Рубрики: BLOCH OSCILLATOR SUPERLATTICES PHOTOCURRENT TRANSPORT FREQUENCY FIELD RECTIFIERS EMISSION CHAOS GAAS Аннотация: We describe an effect of the generation of direct current which may arise in semiconductors or semiconductor microstructures due to a mixing of coherent electromagnetic radiations of commensurate frequencies. The effect is, in essence, due to a nonparabolicity of the electron energy bands and is stronger in systems where this nonparabolicity is greater. We have made exact calculations in the framework of the Kane model, applicable to narrow-gap semiconductors and the tight-binding model which we employ for a description of a semiconductor superlattice.
WOS, Scopus, Читать в сети ИФ Держатели документа: Russian Acad Sci, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia Loughborough Univ Technol, Sch Math & Phys Sci, Loughborough LE11 3TU, Leics, England Russian Acad Sci, LD Landau Theoret Phys Inst, Chernogolovka 142432, Russia ИФ СО РАН Kirensky Institute of Physics, Russian Academy of Sciences, Krasnoyarsk 660036, Russian Federation Sch. of Math. and Physical Sciences, Loughborough University, Loughborough LE11 3TU, United Kingdom Landau Inst. for Theoretical Physics, Russian Academy of Sciences, Moscow 142432, Russian Federation Доп.точки доступа: Erementchouk, M. V.; Kusmartsev, F. V. } Найти похожие
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