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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Patrin K. G., Volkov N. V., Petrakovskii G. A., Boni P., Clementyev E., Sablina K. A., Eremin E. V., Vasilev V., Vasiliev A. D., Molokeev M. S.
Заглавие : (La0.4Eu0.6)0.7Pb0.3MnO3 single crystal: magnetic and transport properties; electron magnetic resonance measurements
Коллективы : "New Layered 3d-Materials for Spintronics", Workshop INTAS - Siberian Branch of the Russian Academy of Sciences Scientific Cooperation on the Research Project
Место публикации : Workshop INTAS - Sib. Branch of the RAS Sci. Cooperation on the Res. Project “New Layered 3d-Materials for Spintronics”/ chairman G. A. Petrakovskii. - 2007. - P.15
Аннотация: INTAS (The International Association for the Promotion of Cooperation with Scientists from the New Independent States of the Former Soviet Union) — международная ассоциация по содействию сотрудничеству с учёными новых независимых государств бывшего Советского Союза. Некоммерческая организация, финансировалась главным образом из бюджета Европейского Союза. Являлась крупнейшим фондом, поддерживающим научное сотрудничество между учёными стран бывшего СССР и Европейского Союза с 1993 г. Программы INTAS охватывали широкий круг научно-исследовательских проблем. 22 сентября 2006 года было принято решение о прекращении осуществления программы на основании рекомендации Европейской Комиссии. С 1 апреля 2007 года прекратилось распределение новых грантов.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Martyanov O., Yudanov V., Lee R., Volkov N. V., Sablina K. A.
Заглавие : A tool to investigate the spatial magnetic phase separation phenomena in manganites
Место публикации : Physics of the Solid State. - 2006. - P.1–3
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kartashev A. V., Flerov I. N., Volkov N. V., Sablina K. A.
Заглавие : Adiabatic calorimetric study of the intense magnetocaloric effect and the heat capacity of (La(0.4)Eu(0.6))(0.7)Pb(0.3)MnO(3)
Коллективы :
Разночтения заглавия :авие SCOPUS: Adiabatic calorimetric study of the intense magnetocaloric effect and the heat capacity of (La0.4Eu0.6)0.7Pb 0.3MnO3
Место публикации : Phys. Solid State: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2008. - Vol. 50, Is. 11. - P2115-2120. - ISSN 1063-7834, DOI 10.1134/S1063783408110188
Примечания : Cited References: 15. - This study was supported by the Council on Grants from the President of the Russian Federation for the Support of Leading Scientific Schools of the Russian Federation (NSh-1011.2008.2) and the Siberian Branch of the Russian Academy of Sciences ( Lavrent'ev Competition of Young Scientists Projects, grant no. 51) within the framework of the Integration Project no. 3.7 of the Siberian Branch of the Russian Academy of Sciences.
Предметные рубрики: LA0.7CA0.3MNO3
MANGANITES
Ключевые слова (''Своб.индексиров.''): 75--30--sg--75--40--cx
Аннотация: The temperature dependences of the intense magnetocaloric effect T (AD)(T, H) and the heat capacity C (p) (T) of the (La(0.4)Eu(0.6))(0.7)Pb(0.3)MnO(3) manganite are directly measured using adiabatic calorimetry. The experimental dependences T (AD)(T) are in satisfactory agreement with those calculated from the data on the behavior of the magnetization. The factors responsible for the absence of an anomaly in the experimental temperature dependence of the heat capacity C (p) (T) in the range of the magnetic phase transition are discussed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Eremin E. V., Volkov N. V., Sablina K. A., Bayukov O. A., Molokeev M. S., Komarov V. Y.
Заглавие : Analysis of the exchange magnetic structure in Pb3Mn7O15
Место публикации : J. Exp. Theor. Phys.: Maik Nauka-Interperiodica Publishing, 2017. - Vol. 124, Is. 5. - P.792-804. - ISSN 10637761 (ISSN), DOI 10.1134/S1063776117040112
Примечания : Cited References: 16
Ключевые слова (''Своб.индексиров.''): crystallography--magnetic properties--magnetic structure--magnetism--manganese--indirect couplings--manganese ions--structural and magnetic properties--single crystals
Аннотация: The indirect-coupling model is used to analyze the exchange magnetic structure of Pb3Mn7O15 in the hexagonal setting. The ratios of manganese ions Mn4+/Mn3+ in each nonequivalent position are determined. Pb3(Mn0.95Ge0.05)7O15 and Pb3(Mn0.95Ga0.05)7O15 single crystals are grown by the solution–melt method in order to test the validity of the proposed model. The structural and magnetic properties of the single crystals are studied. The magnetic properties of the grown single crystals are compared with those of nominally pure Pb3Mn7O15. © 2017, Pleiades Publishing, Inc.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Lukyanenko A. V., Gustaitsev A. O., Smolyakov D. A., Tarasov A. S., Varnakov S. N., Volkov N. V.
Заглавие : Anisotropy of the magnetoimpedance in hybrid hetero structure FeNi/SiO2/p-Si
Коллективы : "Spin physics, spin chemistry, and spin technology", Internnational conference, Физико-технический институт им. А.Ф. Иоффе РАН, Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН, "Инно-мир", центр межрегионального инновационного развития
Место публикации : Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P.111
Примечания : This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Kuz'min V. I., Nikolaev S. V., Ovchinnikov S. G.
Заглавие : Anomalous spectral properties of strongly correlated systems within the cluster perturbation theory
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст.I.P9. - P.151-152. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 4. - The reported study was funded by Russian Foundation for Basic Research (RFBR) according to the research project no. 18-32-00256, RFBR and Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science to the research project: “18-42-240017 Features of electron-phonon coupling in high-temperature superconductors with strong electron correlations” and the research project: “18-42-243004 New thermoelectric materials based on multi-scale spatially inhomogeneous substituted rare-earth cobalt oxides and the Ruddlesden-Popper phases”
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Lukyanenko A. V., Tarasov I. A., Bondarev I. A., Smolyarova T. E., Kosyrev N. N., Komarov V. A., Yakovlev I. A., Volochaev M. N., Solovyov L. A., Shemukhin A. A., Varnakov S. N., Ovchinnikov S. G., Patrin G. S., Volkov N. V.
Заглавие : Approach to form planar structures based on epitaxial Fe1 − xSix films grown on Si(111)
Место публикации : Thin Solid Films: Elsevier, 2017. - Vol. 642. - P.20-24. - ISSN 00406090 (ISSN), DOI 10.1016/j.tsf.2017.09.025
Примечания : Cited References: 29. - We thank V.S. Zhigalov for assistance with the electron microscopy studies. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects Nos. 16-42-243046, 16-42-242036 and 16-42-243060. The work was also supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 7559.2016.2).
Ключевые слова (''Своб.индексиров.''): iron silicides--wet etching--planar structures--moke microscopy
Аннотация: An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron‑silicon alloy films with different silicon content (x = 0–0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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11.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Belyaev B. A., Tyurnev V. V., Volkov N. V.
Заглавие : Scattering of Electromagnetic Waves on a Subwave Lattice of Square Strip Conductors
Коллективы : Ministry of Education and Science of the Russian Federation [14.575.21.0279, RFMEFI57517X0142]
Место публикации : J. Commun. Technol. Electron. - 2019. - Vol. 64, Is. 7. - P.664-674. - ISSN 1064-2269, DOI 10.1134/S1064226919070039. - ISSN 1555-6557(eISSN)
Примечания : Cited References: 24. - The study was supported by the Ministry of Education and Science of the Russian Federation (agreement no. 14.575.21.0279, unique project identifier RFMEFI57517X0142).
Предметные рубрики: MULTILAYER BANDPASS FILTER
DIELECTRIC LAYERS
DESIGN
MESH
Аннотация: Simple formulas are obtained for calculating the scattering matrix of a plane electromagnetic wave incident normally on an infinite 2D lattice formed by square strip conductors and located at the interface of two dielectric media. For the first time, the vortex behavior of the electric field of the lattice was taken into account, which made it possible to repeatedly reduce the computation error at high frequencies. This is confirmed by the close agreement of the amplitude-frequency responses of the structure calculated by the formulas with the characteristics obtained by the numerical electrodynamic analysis of the 3D model when the lattice period is less than half the wavelength.
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12.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tarasov A. S., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-current and optically driven transport properties of the hybrid Fe/SiO 2/p-Si structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P.526-529. - ISBN 1012-0394, DOI 10.4028/www.scientific.net/SSP.190.526. - ISBN 9783037854365
Ключевые слова (''Своб.индексиров.''): hybrid structure--mis transition--photoelectric effect--schottky barrier--channel switching--comparative analysis--electron hole pairs--fe films--fe layer--ferromagnetic films--hybrid structure--optical effects--optical radiations--photogeneration--planar geometries--schottky barriers--semiconductor substrate--temperature variation--critical currents--interfaces (materials)--magnetic materials--photoelectricity--schottky barrier diodes--silicon--switching circuits--transport properties
Аннотация: Pronounced optical- and bias-current-sensitive features of the transport properties of a Fe/SiO 2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO 2 and p- Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO 2 layer. В© (2012) Trans Tech Publications.
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13.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-voltage-controlled ac and dc magnetotransport phenomena in hybrid structures
Коллективы : Moscow International Symposium on Magnetism , Russian Foundation for Basic Research [14-02-00234-a, 14-02-31156], Presidium of the Russian Academy of Sciences [20.8], Ministry of Education and Science of the Russian Federation [02.G25.31.0043]
Место публикации : J. Magn. Magn. Mater./ Moscow International Symposium on Magnetism (6th ; Moscow) (29 June – 3 July 2014): Elsevier Science, 2015. - Vol. 383. - P.69-72. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2014.11.014
Примечания : Cited References:15. - This study was supported by the Russian Foundation for Basic Research, Projects nos. 14-02-00234-a and 14-02-31156, the Presidium of the Russian Academy of Sciences, Program Quantum Mesoscopic and Disordered Structures, Project no. 20.8 and the Ministry of Education and Science of the Russian Federation, Project no. 02.G25.31.0043.
Предметные рубрики: SILICON
SPINTRONICS
FIELD
Ключевые слова (''Своб.индексиров.''): spintronics--hybrid structures--magnetoresistance--magnetoimpedance--photoinduced magnetoresistance
Аннотация: We report some ac and dc magnetotransport phenomena in silicon-based hybrid structures. The giant impedance change under an applied magnetic field has been experimentally found in the metal/insulator/semiconductor (MIS) diode with the Schottky barrier based on the Fe/SiO2/p-Si and Fe/SiO2/n-Si structures. The maximum effect is found to observe at temperatures of 10-30 K in the frequency range 10 Hz-1 MHz, Below 1 kHz the magnetoresistance can be controlled in a wide range by applying a bias to the device. A photoinduced dc magnetoresistance of over 104% has been found in the Fe/SiO2/p-Si back-to-back Schottky diode. The observed magnetic-field-dependent effects are caused by the interface states localized in the insula-tor/semiconductor interface. (C) 2014 Elsevier B.V. All rights reserved.
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14.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Volkov N. V., Tarasov A. S., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G.
Заглавие : Bias-voltage-controlled AC and DC magnetotransport phenomena in hybrid structures
Коллективы : Moscow International Symposium on Magnetism
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2014): 29 June - 3 July 2014 : вook of abstracts. - 2014. - Ст.1RP-A-10. - P.315. - ISBN 978-5-91978-025-0
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15.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyarova T. E., Tarasov A. S., Lukyanenko A. V., Shanidze L. V., Yakovlev I. A., Volkov N. V.
Заглавие : Biocompatible nanostructures fabricated by Dip-Pen nanolithography
Коллективы : Aptamers in Russia, international conference
Место публикации : Aptamers in Russia, international conference (1 ; 2019 ; Aug. 27-30 ; Krasnoyarsk). Molecular Therapy - Nucleic Acids: book of abstracts of the 1st Int. conf. "Aptamers in Russia 2019". - 2019. - Vol. 17, Suppl. 1. - P.8-9
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16.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Smolyarova T. E., Lukyanenko A. V., Tarasov A. S., Rautskii M. V., Bondarev I. A., Ovchinnikov S. G., Volkov N. V.
Заглавие : Biofunctionalized magnetic microdiscs applied in medicine
Коллективы : Moscow International Symposium on Magnetism, Московский государственный университет им. М.В. Ломоносова, Российский фонд фундаментальных исследований
Место публикации : Moscow Int. Symp. on Magnet. (MISM-2017): 1-7 July 2017 : book of abstracts. - 2017. - Ст.2PO-K-47. - P.320
Примечания : Cited References: 2. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund
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17.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyarova T. E., Lukyanenko A. V., Tarasov A. S., Shanidze L. V., Baron F. A., Zelenov F. V., Yakovlev I. A., Volkov N. V.
Заглавие : Biosensors based on nanowire field effect transistors with Schottky contacts
Коллективы : International School and Conference on optoelectronics, photonics, engineering and nanostructures
Место публикации : J. Phys.: Conf. Ser. - 2019. - Vol. 1410. - Ст.012013. - ISSN 1742-6588, DOI 10.1088/1742-6596/1410/1/012013. - ISSN 1742-6596 (eISSN)
Примечания : Cited References: 29. - This study was supported by the Russian Foundation for Basic Research, project no. 18-32-00035 and supported in part by the Ministry of Education and Science of the Russian Federation and the Siberian Branch of the Russian Academy of Sciences, project II.8.70, and the Presidium of the Russian Academy of Sciences, Fundamental Research Program no. 32 «Nanostructures: Physics, Chemistry, Biology, Basics of Technologies».
Аннотация: A top-down nanofabrication approach was used to obtain silicon nanowires from silicon-on-insulator wafers using direct-write electron beam lithography and plasma-reactive ion etching. Fabricated with designed pattern silicon nanowires are 0.4, 0.8, 2 μm in width and 100 nm in height. The devices can be applied in future medical diagnostic applications as novel biosensors with detection principle based on the changes in electrical characteristics of the silicon nanowires functionalized with thiol-containing molecules.
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18.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bolyachkin A. S., Komogortsev S. V.
Заглавие : Power-law behavior of coercivity in nanocrystalline alloys with grain-size distribution
Коллективы : Российская академия наук, Уральское отделение РАН, Институт физики металлов им. М. Н. Михеева Уральского отделения РАН, Уральский федеральный университет им. первого Президента России Б.Н. Ельцина, Российский фонд фундаментальных исследований, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : Euro-asian symposium "Trends in magnetism" (EASTMAG-2019): Book of abstracts/ чл. конс. ком.: S. G. Ovchinnikov, N. V. Volkov [et al.] ; чл. прогр. ком. D. M. Dzebisashvili [et al.]. - 2019. - Vol. 2. - Ст.J.P3. - P.195-196. - ISBN 978-5-9500855-7-4 (Шифр В33/E12-125657784)
Примечания : Cited References: 4
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19.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Bondarev I. A., Volkov N. V.
Заглавие : Transport properties of the La0.75Ca0.25MnO3 manganite
Коллективы : RACIRI Summer School
Место публикации : RACIRI Summer School: Book of abstracts. - 2013. - P.18
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20.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kablov E. N., Piskorskii V. P., Valeev R. A., Ospennikova O. G., Rezchikova I. I., Volkov N. V., Shaikhutdinov K. A.
Заглавие : Boron mobility in sintered (Pr, Dy)–(Fe, Co)–B materials with a high cobalt content
Место публикации : Russ. Metall. (Metally): Pleiades Publishing, 2014. - Vol. 2014, Is. 9. - P.721–724. - ISSN 0036-0295, DOI 10.1134/S0036029514090080. - ISSN 1555-6255
Примечания : Cited References: 15
Аннотация: Sintered (Pr, Dy)–(Fe1 – yCoy)–B materials with up to y ≈ 0.5 atomic fractions have been studied. Boron is found to be a movable element, and its diffusion between principal magnetic phase A and other boron containing phases determines the properties of the materials. The structure of principal magnetic phase grains is sufficiently complex: their periphery is enriched in boron. The enrichment is shown to cause a decrease in the coercive force of the materials to zero after sintering.
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