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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Khalyapin D. L., Turpanov I. A., Li L. A., Beten'kova A. Ya., Kan S. V.
Заглавие : Anomalous temperature dependence of the magnetoresistance in Co/Cu multilayers
Место публикации : Phys. Solid State: AMER INST PHYSICS, 2000. - Vol. 42, Is. 9. - P1688-1690. - ISSN 1063-7834, DOI 10.1134/1.1309452
Примечания : Cited References: 5
Предметные рубрики: FILMS
Аннотация: An anomalous temperature dependence of magnetoresistance (MR) of Co/Cu multilayer films with a similar to 3 Angstrom thick magnetic layer has been established experimentally. The temperature of the MR maximum T-max is shown to coincide with the Neel temperature. The variation of T-max with the Cu layer thickness follows an oscillatory pattern. (C) 2000 MAIK "Nauka/Interperiodica".
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Orlov V. A., Rudenko R. Y., Prokopenko V. S., Orlova I. N., Zamai S. S.
Заглавие : Collective dynamics of magnetic vortices in an array of interacting nanodots
Коллективы : Russian Science Foundation [14-15-00805]
Место публикации : JETP Letters. - 2015. - Vol. 101, Is. 8. - P.562-567. - ISSN 0021, DOI 10.1134/S0021364015080068. - ISSN 10906487 (eISSN)
Примечания : Cited References: 30. - We are grateful to V.Ya. Prints for assistance in the fabrication of arrays of quantum dots. This work was supported by the Russian Science Foundation (project no. 14-15-00805 "Biofunctional Magnetic-Vortex Nanodisks Modified by DNA Aptamers for Targeted Microsurgery of Malignant Neoplasms" for 2014-2016).
Предметные рубрики: VORTEX
Аннотация: The lift of the degeneracy of the resonance frequency of motion of the core of a magnetic vortex in a square array of nanodots has been experimentally detected. The appearance of a frequency multiplet has been theoretically explained. It has been shown that a reason for the lift of degeneracy can be the magnetostatic interaction between nanodots.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Orlov V. A., Rudenko R. Yu., Kobyakov A. V., Lukyanenko A. V., Prokopenko V. S., Orlova I. N., Rudenko T. V.
Заглавие : Collective motion of magnetization in two-dimensional arrays of square elements
Место публикации : Eur. Phys. J. B. - 2018. - Vol. 91, Is. 5. - Ст.90. - ISSN 14346028 (ISSN), DOI 10.1140/epjb/e2018-90006-0
Примечания : Cited References: 53. - This study was supported by the Russian Foundation for basic research, project no. 16-32-00103 and, in part, project no. 18-02-00161.
Ключевые слова (''Своб.индексиров.''): solid state and materials
Аннотация: The resonance in a two-dimensional array of square ferromagnetic elements has been experimentally investigated. The magnetization of the elements is shown to be in the vortex state. The resonance peak splitting in the array with increasing density of the elements has been established. The explanation of this phenomenon is proposed and eigenfrequencies of the collective modes are theoretically estimated. Different combinations of polarities and chiralities of the nearest elements in the array are examined.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Patrin G. S., Kim P. D., Seong-Cho Y., Kim D. -H., Chau N.
Заглавие : Current channel switching in the manganite-based multilayer structure
Место публикации : J. Phys. Conf. Ser. - 2010. - Vol. 200, Is. SECTION 5. - ISSN 17426588 (ISSN), DOI 10.1088/1742-6596/200/5/052031
Ключевые слова (''Своб.индексиров.''): channel switching--current in planes--magnetic tunnel junction--magnetoresistive--manganese silicide--multilayer structures--optical radiations--potential barriers--lanthanum--magnetic fields--manganese--silicides--transport properties--tunnel junctions--manganese oxide
Аннотация: The transport properties of the structure La0.7Sr 0.3MnO3/depleted manganite layer/MnSi have been studied. The depleted manganite layer serves as a potential barrier between the ferromagnetic conducting La0.7Sr0.3MnO3 and MnSi layers by forming a magnetic tunnel junction. The study in the CIP (current-in-plane) geometry has revealed the effect of current channel switching between the manganite layer and the manganese silicide layer with higher conductivity. The effect is controlled by bias current, magnetic field, and optical radiation. Such switching is responsible for the features of the transport properties and the magnetoresistive and photovoltaic effects in the structure. © 2010 IOP Publishing Ltd.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volkov N. V., Eremin E. V., Tsikalov V. S., Patrin G. S., Kim P. D., Seong-Cho Y., Kim D. H., Chau N.
Заглавие : Current-driven channel switching and colossal positive magnetoresistance in the manganite-based structure
Коллективы : RFBR [08-02-00259-a, 08-02-00397-a]; KRSF-RFBR [07-02-96801-a]; Division of Physical Sciences of RAS; Program 'Spin-dependent Effects in Solids and Spintronics' [2.4.2]
Место публикации : J. Phys. D. - 2009. - Vol. 42, Is. 6. - Ст.65005. - ISSN 0022-3727, DOI 10.1088/0022-3727/42/6/065005
Примечания : Cited References: 20. - This study was supported by the RFBR, Projects No 08-02-00259-a and 08-02-00397-a, the KRSF-RFBR 'Enisey-2007', Project No 07-02-96801-a and the Division of Physical Sciences of RAS, Program 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of SB RAS).
Ключевые слова (''Своб.индексиров.''): colossal magnetoresistance--electric resistance--electronic structure--magnetic field effects--magnetoelectronics--manganese--manganites--oxide minerals--schottky barrier diodes--semiconductor junctions--silicides--tunnel junctions--tunnels--bottom layers--channel switching--conducting channels--conducting layers--current-driven--current-in-plane geometries--depletion layers--ferromagnetic state--layered structures--low-resistance contacts--magnetic tunnel junctions--magneto-transport properties--manganese silicides--manganite films--new mechanisms--positive magnetoresistances--positive mr--potential barriers--spin-polarized--tunnel structures--voltage-current characteristics--current voltage characteristics
Аннотация: The transport and magnetotransport properties of a newly fabricated tunnel structure manganite/depletion layer/manganese silicide have been studied in the current-in-plane (CIP) geometry. A manganite depletion layer in the structure forms a potential barrier sandwiched between two conducting layers, one of manganite and the other of manganese silicide. The voltage-current characteristics of the structure are nonlinear due to switching conducting channels from an upper manganite film to a bottom, more conductive MnSi layer with an increase in the current applied to the structure. Bias current assists tunnelling of a carrier across the depletion layer; thus, a low-resistance contact between the current-carrying electrodes and the bottom layer is established. Below 30 K, both conducting layers are in the ferromagnetic state (magnetic tunnel junction), which allows control of the resistance of the tunnel junction and, consequently, switching of the conducting channels by the magnetic field. This provides a fundamentally new mechanism of magnetoresistance (MR) implementation in the magnetic layered structure with CIP geometry. MR of the structure under study depends on the bias current and can reach values greater than 400% in a magnetic field lower than 1 kOe. A positive MR value is related to peculiarities of the spin-polarized electronic structures of manganites and manganese silicides.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Khalyapin D. L., Kim P. D., Kim J., Turpanov I. A., Beten'kova A. Ya., Bondarenko G. V., Isaeva T. N., Kim I.
Заглавие : Effect of alloy formation processes in the Co-Cu system on the magnetic and magnetoresistance properties of multilayer Co/Cu films with ultrathin Co layers prepared by DC magnetron sputtering
Место публикации : Phys. Solid State. - 2010. - Vol. 52, Is. 9. - P.1787-1796. - ISSN 1063-7834, DOI 10.1134/S1063783410090015
Примечания : Cited References: 29
Предметные рубрики: GIANT MAGNETORESISTANCE
SIZE DISTRIBUTION
SPIN VALVES
EXCHANGE
TEMPERATURE
HYSTERESIS
ANISOTROPY
CU(001)
ISLANDS
Аннотация: This paper reports on a study of multilayer Co/Cu films with an effective thickness of the Co layer of similar to 3.5 , which were prepared by magnetron sputtering. The samples prepared have been found to have a metastable multiphase structure. An analysis of the data obtained by structural and, primarily, by magnetic methods has revealed that the main phases are the Co/Cu supersaturated solid solution (alloy) with a Co concentration of about 30 at %, the superparamagnetic phase, and the paramagnetic phase, which is accounted for by the presence of small (a few atoms at most) Co clusters embedded in the Cu matrix. A clearly pronounced maximum in the temperature dependences of the low-field magnetoresistance has been found, which is associated with the temperature of the magnetic phase transition of the supersaturated Co-Cu alloy.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Drokina T. V., Kim P. D., Zvezdin A. K., Redko V. G.
Заглавие : Effect of excited field amplitude on domain boundary resonance
Место публикации : Fiz. Tverd. Tela. - 1981. - Vol. 23, Is. 1. - P.304-306. - ISSN 0367-3294
Примечания : Cited References: 7
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kim P. D., Yu S. C., Patrin G. S., Song Y. Y., Turpanov I. A., Khalyapin D. L., Marushchenko D. A.
Заглавие : Effect of the nonmagnetic layer in a Co/Cu/CoO trilayer structure on the exchange coupling in it
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 112, Is. 4. - P612-616. - ISSN 1063-7761, DOI 10.1134/S1063776111030058
Примечания : Cited References: 21
Предметные рубрики: SPACER LAYER
BIAS
ANISOTROPY
Ключевые слова (''Своб.индексиров.''): cobalt layers--copper layer--exchange bias--interlayer exchange coupling--nonmagnetic layers--oscillation amplitude--temperature dependence--temperature range--trilayer film--trilayer structure--cobalt--crystal structure--epitaxial films--hysteresis--hysteresis loops--magnetic materials--exchange coupling
Аннотация: The dependence of the exchange bias of epitaxial single-crystal Co/Cu/CoO trilayer films on the copper layer thickness and temperature is studied. The exchange bias of the hysteresis loops of the ferromagnetic cobalt layer as a function of the copper layer thickness is found to have a well-pronounced oscillating character. The oscillations manifest themselves over the entire temperature range in which an exchange bias takes place (77-220 K). The complex variation of the oscillation amplitude with the nonmagnetic layer thickness can be explained by the superposition of two interlayer exchange coupling oscillation periods (lambda(1) a parts per thousand 10-11 , lambda(2) a parts per thousand 20 ) having differentamplitudes and temperature dependences.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Khalyapin D. L., Kim J., Stolyar S. V., Turpanov I. A., Kim P. D., Kim I.
Заглавие : Formation of 4H-closely packed structure in thin films of metastable nanocrytalline Co13Cu87 alloy
Разночтения заглавия :авие SCOPUS: Formation of 4H-closely packed structure in thin films of metastable nanocrystalline Co13Cu87 alloy
Место публикации : Solid State Commun. - 2003. - Vol. 128, Is. 6-7. - P.209-212. - ISSN 0038-1098, DOI 10.1016/j.ssc.2003.08.018
Примечания : Cited References: 10
Предметные рубрики: MAGNETORESISTANCE
Ключевые слова (''Своб.индексиров.''): nanocrystalline materials--metals--metastable solid solution--ion impact--metals--nanocrystalline materials--metastable solid solution--ion impact--crystal lattices--nanostructured materials--solid solutions--thin films--ion polishing--cobalt alloys
Аннотация: The crystal structure of the thin films of metastable Co13Cu87 alloy prepared by magnetron sputtering was investigated by transmission electron microscope. As-deposited films have a nanocrystal structure with an fcc lattice. As a result of the prolonged ion polishing with a beam of Ar ions with the energy of 4.7 keV, the four-layer 4H dhcp structure was formed. (C) 2003 Elsevier Ltd. All rights reserved.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Ignatchenko V. A., Kim P. D.
Заглавие : Domain-wall resonance in thin magnetic-films
Место публикации : Zhurnal Eksperim. Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1981. - Vol. 80, Is. 6. - P.2283-2297. - ISSN 0044-4510
Примечания : Cited References: 18
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