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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Erohin S. V., Churkin V. D., Vnukova N. G., Visotin M. A., Kovaleva E. A., Zhukov V. V., Antipina L. Yu., Tomashevich Ye. V., Mikhlin U. L., Popov M. Yu., Churilov G. N., Sorokin P. B., Fedorov A. S.
Заглавие : Insights into fullerene polymerization under the high pressure: The role of endohedral Sc dimer
Место публикации : Carbon. - 2022. - Vol. 189. - P.37-45. - ISSN 00086223 (ISSN), DOI 10.1016/j.carbon.2021.12.040
Примечания : Cited References: 39. - The authors gratefully acknowledge the financial support of RFBR (Project identifier:18-29-19080). The calculations were performed at supercomputer cluster provided by the Materials Modeling and Development Laboratory at NUST “MISIS” and Joint Supercomputer Center of the Russian Academy of Sciences. The authors thank the staff of the Information Technology Department of the Moscow Institute of Physics and Technology and express their gratitude to the Data Center Group for their help in making calculations. M.P. acknowledges the support of the Ministry of Science and Higher Education of the Russian Federation in the framework of the State Task (project code 0718-2020-0037) for Raman study, interpretation, and discussion of obtained results as well as Russian Science Foundation (project #20-12-00097) for investigation of fullerite mechanical properties. V.D.C. acknowledges the support of RFBR (Project identifier:20-32-90038)
Аннотация: In this work, through the technology of producing endohedral metallofullerene in macroscopic quantities, the process of pressure polymerization of Sc2C2@C82 and their mechanical properties have been investigated in detail using a set of experimental and theoretical methods. The crucial role of endohedral atoms is demonstrated by comparison with pristine fullerenes. It is shown that the embedding of Sc2C2 complex inside a fullerene significantly facilitates the polymerization process which finally leads to the highly rigid material at high pressures.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kholtobina A. S., Kovaleva E. A., Melchakova J., Ovchinnikov S. G., Kuzubov A. A.
Заглавие : Theoretical investigation of the prospect to tailor ZnO electronic properties with VP thin films
Место публикации : Nanomaterials. - 2021. - Vol. 11, Is. 6. - Ст.1412. - ISSN 20794991 (ISSN), DOI 10.3390/nano11061412
Примечания : Cited References: 75. - This research was funded by the Russian Science Foundation, grant number 20-73-00179. The authors would like to thank the Information Technology Centre, Novosibirsk State University for providing access to their supercomputers
Аннотация: The atomic and electronic structure of vanadium phosphide one-to four-atomic-layer thin films and their composites with zinc oxide substrate are modelled by means of quantum chemistry. Favorable vanadium phosphide to ZnO orientation is defined and found to remain the same for all the structures under consideration. The electronic structure of the composites is analyzed in detail. The features of the charge and spin density distribution are discussed.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Melchakova I., Kovaleva E. A., Mikhaleva, Natalia S., Tomilin F. N., Ovchinnikov S. G., Kuzubov A. A., Avramov P. V.
Заглавие : External electric field effect on electronic properties and charge transfer in CoI2/NiI2 spinterface
Коллективы : Ministry of Education and Science of the Russian FederationMinistry of Education and Science, Russian Federation [16.1455.2017/PCh]; National Research Foundation of KoreaNational Research Foundation of Korea [NRF-2017R1A2B4004440]; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science [18-43-243011]
Место публикации : Int. J. Quantum Chem. - 2020. - Vol. 120, Is. 3. - Ст.e26092. - ISSN 0020-7608, DOI 10.1002/qua.26092. - ISSN 1097-461X(eISSN)
Примечания : Cited References: 27. - Ministry of Education and Science of the Russian Federation, Grant/Award Number: 16.1455.2017/PCh; National Research Foundation of Korea, Grant/Award Number: NRF-2017R1A2B4004440; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Regional Fund of Science, Grant/Award Number: 18-43-243011
Предметные рубрики: MAGNETIC-PROPERTIES
METAL
EDGE
Аннотация: Electronic structure and spin-related properties of CoI2/NiI2 heterostructure were studied by means of density functional theory. It was shown that the electronic structure at the Fermi level can be characterized by a band gap. The effect of the external electric field on charge transfer and electronic properties of the CoI2/NiI2 interface was investigated, and it was found that band gap width depends on the strength of the applied electric field, switching its nature from semiconducting to a half-metallic one. An easy control of the electronic properties and promising spin-polarized nature of the CoI2/NiI2 spinterface allows the heterostructure to be used in spin-related applications.
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Вид документа : Однотомное издание
Шифр издания :
Автор(ы) : Назаренко, Илья Иванович
Заглавие : Структура, магнитные свойства оксиборатов переходных металлов со структурой котоита и людвигита : автореферат дис. на соиск. уч. степени канд. физ.-мат. наук : 01.04.07 : защищена 24.01.2020
Выходные данные : Красноярск, 2019
Колич.характеристики :18 с
Коллективы : Институт физики им. Л.В. Киренского Сибирского отделения РАН, Казанский научный центр РАН
Примечания : Библиогр.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuklin A. V., Kuzubov A. A., Kovaleva E. A., Lee, Hyosun, Sorokin, Pavel B., Sakai, Seiji, Entani, Shiro, Naramoto, Hiroshi, Avramov P. V.
Заглавие : The direct exchange mechanism of induced spin polarization of low-dimensional π-conjugated carbon- and h-BN fragments at LSMO(001) MnO-terminated interfaces
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [14-13-00139]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.23-29. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.096. - ISSN 1873-4766(eISSN)
Примечания : Cited References:70. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow and the ICC of Novosibirsk State University for providing the computing resources. Russian Science Foundation (Grant No 14-13-00139) supported the work of Russian team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
THIN-FILMS
GIANT MAGNETORESISTANCE
METALLIC
Ключевые слова (''Своб.индексиров.''): graphene nanoribbons--dft--lsmo thin films--induced spin polarization--h-bn nanoribbons--half-metal
Аннотация: Induced spin polarization of π-conjugated carbon and h-BN low dimensional fragments at the interfaces formed by deposition of pentacene molecule and narrow zigzag graphene and h-BN nanoribbons on MnO2-terminated LSMO(001) thin film was studied using GGA PBE+U PAW D3-corrected approach. Induced spin polarization of π-conjugated low-dimensional fragments is caused by direct exchange with Mn ions of LSMO(001) MnO-derived surface. Due to direct exchange, the pentacene molecule changes its diamagnetic narrow-band gap semiconducting nature to the ferromagnetic semiconducting state with 0.15 eV energy shift between spin-up and spin-down valence bands and total magnetic moment of 0.11 μB. Direct exchange converts graphene nanoribbon to 100% spin-polarized half-metal with large amplitude of spin-up electronic density at the Fermi level. The direct exchange narrows the h-BN nanoribbon band gap from 4.04 to 1.72 eV in spin-up channel and converts the h-BN ribbon semiconducting diamagnetic nature to a semiconducting magnetic one. The electronic structure calculations demonstrate a possibility to control the spin properties of low-dimensional π-conjugated carbon and h-BN fragments by direct exchange with MnO-derived LSMO(001) surface for spin-related applications.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Fedorov A. S., Kuzubov A. A., Kovaleva E. A., Popova M. I., Kholtobina A. S., Mikhaleva N. S., Visotin M. A.
Заглавие : DFT investigation of electronic and optical magnetic properties of one dimensional transition metal halide structuresTmHaI3 : Invited
Коллективы : Federal Research Center KSC SB RAS, Kirensky Institute of Physics, Siberian Federal Univercity, International Workshop on Actual Problems of Condensed Matter Physics
Место публикации : Int. workshop on actual probl. of cond. matt. phys.: Program. Book of abstracts/ Fed. Res. Center KSC SB RAS, Kirensky Inst. of phys., Sib. Fed. Univ. - Krasnoyarsk, 2017. - P.20
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Вид документа : Однотомное издание
Шифр издания : В37 рукописный текст
Автор(ы) : Ковалева, Евгения Андреевна
Заглавие : Исследование контактных взаимодействий в интерфейсах на основе некоторых 0D и 1D нанообъектов и ферромагнитных материалов методами квантовой химии : автореферат дис. на соиск. уч. степени канд. физ.-мат. наук : 01.04.07 : защищена 07.04.2017
Выходные данные : Красноярск, 2017
Колич.характеристики :19 с
Коллективы : Сибирский федеральный университет, Институт катализа им. Г.К. Борескова Сибирского отделения РАН
Примечания : Библиогр.
ГРНТИ : 29.19.22 + 29.19.37 + 31.15.15
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Kuzubov A. A., Kovaleva E. A., Popova M. I., Kholtobina A. S., Mikhaleva N. S., Visotin M. A., Fedorov A. S.
Заглавие : DFT investigation of electronic structures and magnetic properties of halides family MeHal3 (Me=Ti, Mo,Zr,Nb, Ru, Hal=Cl,Br,I) one dimensional structures
Коллективы : Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium, Институт физики им. Л.В. Киренского Сибирского отделения РАН , Russian Science Foundation [16-13-00060]; Russian Foundation for Basic Research [RFBR 16-32-60003 mol_a_dk]
Место публикации : J. Magn. Magn. Mater.: Elsevier Science, 2017. - Vol. 440: EURO-Asian Symposium on Trends in Magnetism (EASTMAG) (AUG 15-19, 2016, Siberian Fed Univ, Krasnoyarsk, RUSSIA). - P.93-96. - ISSN 0304-8853, DOI 10.1016/j.jmmm.2016.12.054. - ISSN 1873-4766(eISSN)
Примечания : Cited References:16. - This work was supported by the Russian Science Foundation, Project no. 16-13-00060. N.S.M. thanks the Russian Foundation for Basic Research, project RFBR 16-32-60003 mol_a_dk, for the financial support of ZrIINF3/INF, TiIINF3/INF and NbIINF3/INF electronic structure calculations
Предметные рубрики: INITIO MOLECULAR-DYNAMICS
TOTAL-ENERGY CALCULATIONS
AUGMENTED-WAVE
Ключевые слова (''Своб.индексиров.''): transition metal trihalides--magnetic properties--thermoelectric--conversion--density functional theory
Аннотация: Using DFT GGA calculations, electronic structure and magnetic properties of wide family of transition metal trihalides (TMHal3) (Zr, Ti and Nb iodides, Mo, Ru, Ti and Zr bromides and Ti or Zr chlorides) are investigated. These structures consist of transition metal atoms chains surrounded by halides atoms. Chains are connected to each other by weak interactions. All TMHal3 compounds were found to be conductive along chain axis except of MoBr3 which is indirect gap semiconductor. It was shown that NbI3 and MoBr3 have large magnetic moments on metal atoms (1.17 and 1.81 µB, respectively) but other TMHal3 materials have small or zero magnetic moments. For all structures ferromagnetic and anti-ferromagnetic phases have almost the same energies. The causes of these properties are debated.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Avramov P. V., Kuzubov A. A., Kuklin A. V., Lee H., Kovaleva E. A., Sakai S., Entani S., Naramoto H., Sorokin P. B.
Заглавие : Theoretical investigation of the interfaces and mechanisms of induced spin polarization of 1D narrow zigzag graphene- and h-BN nanoribbons on a SrO-terminated LSMO(001) surface
Коллективы : Ministry of Education and Science of the Russian Federation [K2-2015-033]; Russian Science Foundation [14-13-00139]; Japanese Science Foundation (JSPS KAKENHI) [16H3875]
Место публикации : J. Phys. Chem. A: American Chemical Society, 2017. - Vol. 121, Is. 3. - P.680-689. - ISSN 1089-5639, DOI 10.1021/acs.jpca.6b09696
Примечания : Cited References:74. - We acknowledge the Siberian Supercomputer Center (SSCC) of SB RAS, Novosibirsk; the Joint Supercomputer Center of RAS, Moscow; and the ICC of Novosibirsk State University for providing the computing resources. P.B.S. acknowledges the financial support of the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST MISiS (No. K2-2015-033). The Russian Science Foundation (Grant No 14-13-00139) supported the work of the Russian team. The Japanese Science Foundation (JSPS KAKENHI, Grant No 16H3875) supported the work of the Japanese team.
Предметные рубрики: HEXAGONAL BORON-NITRIDE
AUGMENTED-WAVE METHOD
GIANT MAGNETORESISTANCE
Аннотация: The structure of the interfaces and the mechanisms of induced spin polarization of 1D infinite and finite narrow graphene- and h-BN zigzag nanoribbons placed on a SrO-terminated La1-xSrxMnO3 (LSMO) (001) surface were studied using density functional theory (DFT) electronic structure calculations. It was found that the pi-conjugated nanofragments are bonded to the LSMO(001) surface by weak disperse interactions. The types of coordination of the fragments, the strength of bonding, and the rate of spin polarization depend upon the nature of the fragments. Infinite and finite graphene narrow zigzag nanoribbons are characterized by the lift of the spin degeneracy and strong spin polarization caused by interface-induced structural asymmetry and oxygen-mediated indirect exchange interactions with Mn ions of LSMO support. Spin polarization changes the semiconducting nature of infinite graphene nanoribbons to half-metallic state with visible spin-up density of states at the Fermi level. The h-BN nanoribbon binding energy is weaker than graphene nanoribbon ones with noticeably shorter interlayer distance. The asymmetry effect and indirect exchange interactions cause spin polarization of h-BN nanoribbon as well with formation of embedded states inside the band gap. The results show a possibility to use one-atom thick nanofragments to design LSMO-based heterostructures for spintronic nanodevices with h-BN as an inert spacer to develop different potential barriers.
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Chervyakova D. I., Churilov G. N., Dudnik A. I., Glushenko G. A., Kovaleva E. A., Kuzubov A. A., Nikolaev N. S., Osipova I. V., Vnukova N. G.
Заглавие : The technology and setup for high-throughput synthesis of endohedral metal fullerenes
Коллективы : "Research and Development - 2016", Scientific-Practical Conference
Место публикации : Proceedings of the Scientific-Practical Conference "Research and Development - 2016": Springer, 2016. - P.481-489. - ISSN 978-3-319-62869-1, DOI 10.1007/978-3-319-62870-7_51
Аннотация: The article presented the technology and setup for high-throughput synthesis of carbon nanostructures. It was shown that the plasma-chemical synthesis of fullerenes and endohedral metallofullerenes (EMF) in high-frequency arc discharge can be controlled by changing helium pressure in the chamber. The methods of extraction using Lewis acids and separation of individual EMF by HPLC were suggested as the most effective.
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