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Lukyanenko, A. V.
Alternative technology for creating nanostructures using Dip Pen Nanolithography / A. V. Lukyanenko, T. E. Smolyarova // Физ. и техника полупроводников. - 2018. - Т. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Вып. 5. - с. 519, DOI 10.21883/FTP.2018.05.45863.52. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 16-42-243046, 16-42-242036 and 16-42-243060. . - ISSN 0015-3222
Аннотация: For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a directwrite technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe3Si/Au structure.

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"Переводная" версия Lukyanenko A. V. Alternative technology for creating nanostructures using Dip Pen Nanolithography [Текст] / A. V. Lukyanenko, T. E. Smolyarova // Semiconductors. - 2018. - Vol. 52 : 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia) Is. 5.- P.636-638

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Лукьяненко, Анна Витальевна; International Symposium on Nanostructures - Physics and Technology(25th ; Jun 26-30, 2017 ; Saint Petersburg, Russia)
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Lukyanenko, A. V.
Alternative technology for creating nanostructures using Dip Pen Nanolithography / A. V. Lukyanenko, T. E. Smolyarova // Semiconductors. - 2018. - Vol. 52: 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia), Is. 5. - P. 636-638, DOI 10.1134/S1063782618050202. - Cited References:9. - The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research project nos. 16-42-243046, 16-42-242036 and 16-42-243060. . - ISSN 1063-7826. - ISSN 1090-6479

РУБ Physics, Condensed Matter

Аннотация: For modern microelectronics, at the present time, the technologies of consciousness smart structures play an important role, which can provide accuracy, stability and high quality of the structures. Submicron lithography methods are quite expensive and have natural size limitations, not allowing the production of structures with an extremely small lateral limitation. Therefore, an intensive search was conducted for alternative methods for creating submicron resolution structures. Especially attractive one is the possibility of self-organization effects utilization, where the nanostructure of a certain size is formed under the influence of internal forces. The dip pen nanolithography method based on a scanning probe microscope uses a directwrite technology and allows one to carry out a playback of small size structures with high accuracy. In the experiment, a substrate coated with Au (15 nm) using a DPN technique is applied to the polymer to form a desired pattern nano-sized channel. The experiment was conducted using a pointed probe SiN, coated MHA-Acetonitrile, on the Si(111)/Fe3Si/Au structure.

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Публикация на "русском языке" Lukyanenko A. V. Alternative technology for creating nanostructures using Dip Pen Nanolithography [Текст] / A. V. Lukyanenko, T. E. Smolyarova // Физ. и техника полупроводников. - 2018. - Т. 52 : 25th International Symposium on Nanostructures - Physics and Technology (Jun 26-30, 2017, Saint Petersburg, Russia) Вып. 5.- с.519

Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Лукьяненко, Анна Витальевна; Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund [16-42-243046, 16-42-242036, 16-42-243060]; International Symposium on Nanostructures - Physics and Technology(25th ; Jun 26-30, 2017 ; Saint Petersburg, Russia)
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Anisotropy of the magnetoimpedance in hybrid hetero structure FeNi/SiO2/p-Si / A. V. Lukyanenko [et al.] // Int. conf. "Spin physics, spin chem., and spin technol.". - 2015. - P. 111. - This study was supported by the Russian Foundation for Basic Research, projects nos. 14-02-31156 and 14-02-00234, and the Russian Ministry of Education and Science, project no. 02.G25.31.0043

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Доп.точки доступа:
Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Gustaitsev, A. O.; Smolyakov, D. A.; Смоляков, Дмитрий Александрович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Varnakov, S. N.; Варнаков, Сергей Николаевич; Volkov, N. V.; Волков, Никита Валентинович; "Spin physics, spin chemistry, and spin technology", Internnational conference(2015 ; Jun. ; 1-5 ; Saint Peterburg); Физико-технический институт им. А.Ф. Иоффе РАН; Казанский физико-технический институт им. Е. К. Завойского Казанского научного центра РАН; "Инно-мир", центр межрегионального инновационного развития
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Approach to form planar structures based on epitaxial Fe1 − xSix films grown on Si(111) / A. S. Tarasov [et al.] // Thin Solid Films. - 2017. - Vol. 642. - P. 20-24, DOI 10.1016/j.tsf.2017.09.025. - Cited References: 29. - We thank V.S. Zhigalov for assistance with the electron microscopy studies. The reported study was funded by Russian Foundation for Basic Research, Government of Krasnoyarsk Territory, Krasnoyarsk Region Science and Technology Support Fund to the research projects Nos. 16-42-243046, 16-42-242036 and 16-42-243060. The work was also supported by the Program of the President of the Russian Federation for the support of leading scientific schools (Scientific School 7559.2016.2). . - ISSN 0040-6090
Кл.слова (ненормированные):
Iron silicides -- Wet etching -- Planar structures -- MOKE microscopy
Аннотация: An approach to form planar structures based on ferromagnetic Fe1 − xSix films is presented. Epitaxial Fe1 − xSix iron‑silicon alloy films with different silicon content (x = 0–0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation
Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Krasnoyarsk, Russian Federation
M.V.Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russian Federation

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Tarasov, I. A.; Тарасов, Иван Анатольевич; Bondarev, I. A.; Бондарев, Илья Александрович; Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Kosyrev, N. N.; Косырев, Николай Николаевич; Komarov, V. A.; Комаров, Василий Андреевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Volochaev, M. N.; Волочаев, Михаил Николаевич; Solovyov, L. A.; Соловьев, Леонид Александрович; Shemukhin, A. A.; Чемухин, А. А.; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Patrin, G. S.; Патрин, Геннадий Семёнович; Volkov, N. V.; Волков, Никита Валентинович
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Aptamer modified Au/Ni/Au nanodiscs for magnetomechanical cell surgery / A. Е. Sokolov, A. V. Lukyanenko, V. N. Zabluda [et al.] // V International Baltic Conference on Magnetism. IBCM : Book of abstracts. - 2023. - P. 12. - Cited References: 3

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Krasnoyarsk State Medical University
Federal Research Center KSC SB RAS

Доп.точки доступа:
Sokolov, A. Е.; Соколов, Алексей Эдуардович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Zabluda, V. N.; Заблуда, Владимир Николаевич; Borus, A. A.; Борус, Андрей Андреевич; Zamay, G. S.; Замай, Галина Сергеевна; Zamay, T. N.; Luzan, N.; Zamay, S. S.; International Baltic Conference on Magnetism(5 ; 2023 ; Aug. 20-24 ; Svetlogorsk, Russia); Балтийский федеральный университет им. И. Канта
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Aptamer-functionalized magnetic nanodevices for tumor cell microsurgery / A. E. Sokolov // Moscow Int. Symp. on Magnet. (MISM-2017) : 1-7 July 2017 : book of abstracts. - 2017. - Ст. 3PO-K-24. - P. 555. - Cited References: 2. - Support Grant of the President of the Russian Federation NSh-7559.2016.2

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Доп.точки доступа:
Sokolov, A. Е.; Соколов, Алексей Эдуардович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Ivanova, O. S.; Иванова, Оксана Станиславовна; Zabluda, V. N.; Заблуда, Владимир Николаевич; Kuzmichenko, N.; Zamay, S. S.; Замай С. С.; Zamay, T. S.; Замай Т. С.; Kolovskaya, O. S.; Коловская О. С.; Zamay, G. S.; Замай Г. С.; Svetlichny, V. A.; Moscow International Symposium on Magnetism(7 ; 2017 ; Jul. ; Moscow); Московский государственный университет им. М.В. Ломоносова; Российский фонд фундаментальных исследований
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Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties / A. S. Tarasov, I. A. Tarasov, I. A. Yakovlev [et al.] // Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст. 131, DOI 10.3390/nano12010131. - Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008) . - ISSN 2079-4991

РУБ Chemistry, Multidisciplinary + Nanoscience & Nanotechnology + Materials Science, Multidisciplinary + Physics, Applied
Рубрики:
FILMS
   ANISOTROPY
   SI(001)
   DEVICES
   SURFACE
   GROWTH
Кл.слова (ненормированные):
iron silicide -- germanium -- molecular beam epitaxy -- epitaxial stress -- lattice distortion -- dislocation lattices -- FMR -- Rutherford backscattering -- spintronics
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 < x < 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.

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Держатели документа:
RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Krasnoyarsk 660036, Russia.
Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia.
RAS, Fed Res Ctr KSC SB, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia.
RAS, Boreskov Inst Catalysis SB, Synchrotron Radiat Facil SKIF, Nikolskiy Prospekt 1, Koltsov 630559, Russia.
Immanuel Kant Balt Fed Univ, REC Smart Mat & Biomed Applicat, Kaliningrad 236041, Russia.
Immanuel Kant Balt Fed Univ, REC Funct Nanomat, Kaliningrad 236016, Russia.
Univ Duisburg Essen, Fac Phys, D-47057 Duisburg, Germany.
Univ Duisburg Essen, Ctr Nanointegrat, D-47057 Duisburg, Germany.

Доп.точки доступа:
Tarasov, A. S.; Тарасов, Антон Сергеевич; Tarasov, I. A.; Тарасов, Иван Анатольевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Bondarev, I. A.; Бондарев, Илья Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Platunov, M. S.; Платунов, Михаил Сергеевич; Volochaev, M. N.; Волочаев, Михаил Николаевич; Efimov, Dmitriy D.; Goikhman, Aleksandr Yu.; Belyaev, B. A.; Беляев, Борис Афанасьевич; Baron, F. A.; Барон, Филипп Алексеевич; Shanidze, Lev V.; Шанидзе, Лев Викторович; Farle, M.; Фарле, Михаель; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Volkov, N. V.; Волков, Никита Валентинович; RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
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Auger electron spectroscopy of the air-exposed (Cr0.5Mn0.5)2GaC MAX film surface / T. A. Andryushchenko, S. A. Lyashchenko, A. V. Lukyanenko [et al.] // Tech. Phys. Lett. - 2023. - Vol. 49, Is. 7. - P. 59-64, DOI 10.61011/TPL.2023.07.56448.19430. - Cited References: 16. - This study was supported by a grant from the Russian Science Foundation, project № 21-12-00226 (http://rscf.ru/project/21-12-00226/) . - ISSN 1063-7850. - ISSN 1090-6533
Кл.слова (ненормированные):
MAX phases -- Auger electron spectroscopy -- epitaxial films -- ion etching
Аннотация: We have analyzed chemical bonding of atmospheric oxygen with chromium and manganese on the epitaxial MAX-phase (Cr0.5Mn0.5)2GaC surface using Auger electron spectroscopy combined with ion etching. It was found that the system has a specific anisotropic oxidation where oxygen atoms bind to chromium and manganese ones more actively at the faces of layered MAX phase crystallites in contrast to the (0001) basal plane. At the same time, the dominance of the Mn–O chemical bonding over Cr–O is observed on the latter.

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Публикация на русском языке Оже-электронная спектроскопия поверхности MAX-пленок (Cr0.5Mn0.5)2GaC, окисленной в результате хранения на воздухе [Текст] / Т. А. Андрющенко, С. А. Лященко, А. В. Лукьяненко [и др.] // Письма в ЖТФ. - 2023. - Т. 49 Вып. 14. - С. 22-27

Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Krasnoyarsk, Russia
Siberian State University, Krasnoyarsk, Russia

Доп.точки доступа:
Andryushchenko, T. A.; Андрющенко, Татьяна Александровна; Lyashchenko, S. A.; Лященко, Сергей Александрович; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
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Auger electron spectroscopy of thin Cr2GeC films / T. A. Andryushchenko, S. A. Lyaschenko, S. N. Varnakov [et al.] // Phys. Met. Metallogr. - 2023. - Vol. 124, Is. 14. - P. 1776-1782, DOI 10.1134/S0031918X2360135X. - Cited References: 33. - The research was supported by the Russian Science Foundation (grant no. 21-12-00226, http://rscf.ru/project/21-12-00226/) . - ISSN 0031-918X. - ISSN 1555-6190
Кл.слова (ненормированные):
МАХ phases -- chromium germanides -- epitaxial thin films -- Auger electron spectroscopy -- magnetron sputtering co-deposition
Аннотация: Auger electron spectroscopy was used to determine the phase composition of Cr2GeC MAX phase thin films. A distinctive feature of the formation of carbon-containing MAX phases is the shape of carbon Auger peaks, which is characteristic of metal carbides spectra. Features of the Auger spectra in the presence of secondary phases of chromium germanides are found. Their presence can manifest itself in an increase in the energy of the germanium peaks, which is caused by a chemical shift during the formation of the Cr–Ge bond. Moreover, we have detected the accumulation of electronic charge, which can be explained by the features of the surface morphology.

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Держатели документа:
Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036, Krasnoyarsk, Russia

Доп.точки доступа:
Andryushchenko, T. A.; Андрющенко, Татьяна Александровна; Lyashchenko, S. A.; Лященко, Сергей Александрович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Nemtsev, I. V.; Немцев, Иван Васильевич; Yakovlev, I. A.; Яковлев, Иван Александрович; Shevtsov, D. V.; Шевцов, Дмитрий Валентинович; Maximova, O. A.; Максимова, Ольга Александровна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
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10.

Biocompatible nanostructures fabricated by Dip-Pen nanolithography / T. E. Smolyarova, A. S. Tarasov, A. V. Lukyanenko [et al.] // Molecular Therapy - Nucleic Acids : book of abstracts of the 1st Int. conf. "Aptamers in Russia 2019". - 2019. - Vol. 17, Suppl. 1. - P. 8-9

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Доп.точки доступа:
Smolyarova, T. E.; Смолярова, Татьяна Евгеньевна; Tarasov, A. S.; Тарасов, Антон Сергеевич; Lukyanenko, A. V.; Лукьяненко, Анна Витальевна; Shanidze, L. V.; Шанидзе, Лев Викторович; Yakovlev, I. A.; Яковлев, Иван Александрович; Volkov, N. V.; Волков, Никита Валентинович; Aptamers in Russia, international conference(1 ; 2019 ; Aug. 27-30 ; Krasnoyarsk)
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