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1.


    Kikoin, K. A.
    A novel explanation of the phase-transition with the valence change in cation-substituted samarium monochalcogenides / K. A. Kikoin, E. G. Goryachev, V. A. Gavrichkov // Solid State Commun. - 1986. - Vol. 60, Is. 8. - P. 663-667, DOI 10.1016/0038-1098(86)90264-4. - Cited References: 21 . - ISSN 0038-1098
РУБ Physics, Condensed Matter


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Держатели документа:
LV KIRENSKII PHYS INST,KRASNOYARSK 660036,USSR
ИФ СО РАН
Доп.точки доступа:
Goryachev, E. G.; Горячев, Евгений Геннадьевич; Gavrichkov, V. A.; Гавричков, Владимир Александрович
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2.


    Gavrichkov, V. A.
    A simple metal-insulator criterion for the doped Mott-Hubbard materials / V. A. Gavrichkov // Solid State Commun. - 2015. - Vol. 208. - P. 11-14, DOI 10.1016/j.ssc.2015.02.014. - Cited References:19. - We acknowledge with pleasure discussions with Igor S. Sandalov during the course of this work. This work was supported by RFBR Grant nos. 13-02-01395, 14-02-00186, and Nsh-28862014.2. . - ISSN 0038. - ISSN 1879-2766. -
РУБ Physics, Condensed Matter
Рубрики:
COOPER PAIRS
   Bi2Sr2CaCu2O8+DELTA

Кл.слова (ненормированные):
Doped Mott-Hubbard materials -- Metal-insulator transition -- First removal -- electron states
Аннотация: A simple metal-insulator criterion for doped Mott-Hubbard materials has been derived, Its readings are closely related to the orbital and spin nature of the ground states of the unit cell. The available criterion readings (metal or insulator) in the paramagnetic phase reveal the possibility of the insulator state of doped materials with the forbidden first removal electron states. According to its physical meaning, the result is similar to the Wilson's criterion in itinerant electron systems. The application of the criterion to high-T-c cuprates is discussed. (C) 2015 Elsevier Ltd. All rights reserved.

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Доп.точки доступа:
Гавричков, Владимир Александрович; RFBR [13-02-01395, 14-02-00186, Nsh-28862014.2]
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3.


    Gavrichkov, V. A.
    A simple metal-insulator criterion for the doped Mott-Hubbard materials / V. A. Gavrichkov // School and Workshop on Strongly Correlated Electronic Systems - Novel Materials and Novel Theories. - 2015

Материалы конференции

Доп.точки доступа:
School and Workshop on Strongly Correlated Electronic Systems - Novel Materials and Novel Theories(2015 ; jul. ; 10-21 ; Triest, Italy); International Centre for Theoretical Physics(Abdus Salam)
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4.


   
    Ab initio calculation of the parameters and band structure of the multiband p-d model for La2CuO4 / Z. V. Pchelkina [et al.] // The Physics of Metals and Metallography. - 2006. - Т. 101, №1 suppl. - P., DOI 10.1134/S0031918X06130059. - Библиогр.: 9. - Joint Integration Pro gram of the Siberian and Ural Divisions of the Russian Academy of Sciences (no. 22); the RFBR–GFEN (grant no. 03-02-39024); the Russian Foundation for Basic Research (grant nos. 04-02-16096 and 03-02-16124); the Siberian Division of the Russian Academy of Sciences, Strongly Correlated Electron Systems Pro gram; and INTAS (grant no. 01-0654). . - ISSN 0031-918X. - ISSN 1531-8672
Аннотация: In this paper, we proposed ab initio calculation of hopping parameters for La2CuO4. The Wannier function projection procedure of obtaining a small Hamiltonian in real space for different sets of bands of inter est was used. The importance of taking into account Cu and apical Oa pz orbitals is shown. The param eters obtained are used to calculate the band structure of undoped La2CuO4 in the framework of the multiband p–d model in the regime of strong electron correlations.

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Держатели документа:
Center for Electronic Correlations and Magnetism,University of Augsburg
Institute of Metal Physics,Ural Division,Russian Academy of Sciences
Kirensky Institute of Physics,Siberian Division,Russian Academy of Sciences

Доп.точки доступа:
Pchelkina, Z. V.; Kondakov, D. E.; Anisimov, V. I.; Leonov, I. V.; Gavrichkov, V. A. ; Гавричков Владимир Александрович; Ovchinnikov, S. G. ; Овчинников Сергей Геннадьевич
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5.


    Gavrichkov, V. A.
    An impurity resistivity of doped manganese perovskites / V. A. Gavrichkov, S. G. Ovchinnikov // Physica B. - 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P. 828-830, DOI 10.1016/S0921-4526(98)00875-8. - Cited References: 4 . - ISSN 0921-4526
РУБ Physics, Condensed Matter
Рубрики:

Кл.слова (ненормированные):
manganese perovskites -- mobility -- linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H-->0) = 0 for T > T(c) to linear dR/dH\(H-->0) for T < T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.

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Держатели документа:
Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Institute of Physics, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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6.


   
    Application of the new LDA plus GTB method for the band structure calculation of n-type cuprates / M. M. Korshunov [et al.] // Physica B. - 2006. - Vol. 378-80: International Conference on Strongly Correlated Electron Systems (SECES 05) (JUL 26-30, 2005, Vienna, AUSTRIA). - P. 459-460, DOI 10.1016/j.physb.2006.01.340. - Cited References: 11 . - ISSN 0921-4526
РУБ Physics, Condensed Matter
Рубрики:
SUPERCONDUCTIVITY
   PARAMETERS

   DENSITY

Кл.слова (ненормированные):
strongly correlated electron systems -- superconductivity -- n-type cuprates -- n-type cuprates -- Strongly correlated electron systems -- Superconductivity -- Electronic structure -- Hamiltonians -- Mathematical models -- Oxide superconductors -- Perturbation techniques -- Intercluster hopping -- N-type cuprates -- Strongly correlated electron systems -- Band structure
Аннотация: A novel hybrid scheme is proposed and applied for band structure calculations of undoped n-type cuprate Nd2CuO4. The ab initio LDA calculation is used to obtain single electron and Coulomb parameters of the multiband Hubbard-type model. In strong correlation regime the electronic structure within this model is calculated by the generalized tight-binding (GTB) method, that combines the exact diagonalization of the model Hamiltonian for a small cluster with perturbation treatment of the intercluster hopping and interactions. For Nd2CuO4, this scheme results in charge transfer insulator with value of the gap and band dispersion in agreement to the experimental data. (c) 2006 Elsevier B.V. All rights reserved.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Russian Acad Sci, Inst Met Phys, Ural Div, Ekaterinburg 620219, Russia
ИФ СО РАН
L.V. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, 660036 Krasnoyarsk, Russian Federation
Institute of Metal Physics, Russian Academy, Sciences-Ural Division, GSP-170, 620219 Yekaterinburg, Russian Federation

Доп.точки доступа:
Korshunov, M. M.; Коршунов, Максим Михайлович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Gavrichkov, V. A.; Гавричков, Владимир Александрович; Nekrasov, I. A.; Pchelkina, Z. V.; Anisimov, V. I.
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7.


    Gavrichkov, V. A.
    Cation spin and superexchange interaction in oxide materials below and above spin crossover under high pressure / V. A. Gavrichkov, S. I. Polukeev, S. G. Ovchinnikov. - Electronic text data // ArXiv. - 2019. - Ст. 1911.06482. - Cited References: 63. - We acknowledge the support of the Russian Science Foundation through Grant 18-12-00022.
Рубрики:
Materials Science
   Strongly Correlated Electrons

Аннотация: We derived simple rules for the sign of superexchange interaction based on the multielectron calculations of the superexchange interaction in the transition metal oxides that are valid both below and above spin crossover under high pressure. The superexchange interaction between two cations in dn configurations is given by a sum of individual contributions related to the electron-hole virtual excitations to the different states of the dn+1 and dn−1 configurations. Using these rules, we have analyzed the sign of the superexchange interaction of a number of oxides with magnetic cations in electron configurations from d2 till d8: the iron, cobalt, chromium, nickel, copper and manganese oxides with increasing pressure. The most interesting result concerns the magnetic state of cobalt and nickel oxides CoO, Ni2O3 and also La2CoO4, LaNiO3 isostructural to well-known high-TC and colossal magnetoresistance materials. These oxides have a spin 12 at the high pressure. Change of the interaction from antiferromagnetic below spin crossover to ferromagnetic above spin crossover is predicted for oxide materials with cations in d5(FeBO3) and d7(CoO) configurations, while for materials with the other dn configurations spin crossover under high pressure does not change the sign of the superexchange interaction.

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Держатели документа:
Kirensky Institute of Physics, Akademgorodok 50, bld.38, Krasnoyarsk, 660036 Russia

Доп.точки доступа:
Polukeev, S. I.; Полукеев, Семен Игоревич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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8.


    Gavrichkov, V. A.
    Cation spin and superexchange interaction in oxide materials below and above spin crossover under high pressure / V. A. Gavrichkov, S. I. Polukeev, S. G. Ovchinnikov // Phys. Rev. B. - 2020. - Vol. 101, Is. 9. - Ст. 094409, DOI 10.1103/PhysRevB.101.094409. - Cited References: 65. - We acknowledge the support of the Russian Science Foundation through Grant No. 18-12-00022 . - ISSN 2469-9950. - ISSN 2469-9969
РУБ Materials Science, Multidisciplinary + Physics, Applied + Physics, Condensed Matter
Рубрики:
EXCHANGE INTERACTION
   PHASE-TRANSITIONS

   STATE

   ELECTRON

   IRON

Аннотация: We derived simple rules for the sign of 180° superexchange interaction based on the multielectron calculations of the superexchange interaction in the transition metal oxides that are valid both below and above spin crossover under high pressure. The superexchange interaction between two cations in dn configurations is given by a sum of partial contributions related to the electron-hole virtual excitations to the different states of the dn+1 and dn−1 configurations. Using these rules, we have analyzed the sign of the 180° superexchange interaction of a number of oxides with magnetic cations in electron configurations from d2 until d8: the iron, cobalt, chromium, nickel, copper, and manganese oxides with increasing pressure. The most interesting result concerns the magnetic state of cobalt and nickel oxides CoO, Ni2O3 and also La2CoO4, LaNiO3 isostructural to well-known high-TC and colossal magnetoresistance materials. These oxides have a spin 12 at the high pressure. Change of the interaction from antiferromagnetic below spin crossover to ferromagnetic above spin crossover is predicted for oxide materials with cations in d5(FeBO3) and d7(CoO) configurations, while for materials with the other dn configurations spin crossover under high pressure does not change the sign of the 180∘ superexchange interaction.

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Держатели документа:
Kirensky Inst Phys, Akadeingorodok 50,Bld 38, Krasnoyarsk 660036, Russia.

Доп.точки доступа:
Polukeev, S. I.; Полукеев, Семен Игоревич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович; Russian Science FoundationRussian Science Foundation (RSF) [18-12-00022]
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9.


    Gavrichkov, V. A.
    Characteristic features of the extrinsic electric resistance in ferromagnets with low carrier density / V. A. Gavrichkov, S. G. Ovchinnikov // Phys. Solid State. - 1999. - Vol. 41, Is. 1. - P. 59-66, DOI 10.1134/1.1130731. - Cited References: 26 . - ISSN 1063-7834
РУБ Physics, Condensed Matter
Рубрики:
QUANTUM TEMPERATURE OSCILLATIONS
   MAGNETIC SEMICONDUCTORS

   HGCR2SE4

   RESISTIVITY

   FILMS

Аннотация: Switching from simple semiconductors to more complicated chemical compositions, we encounter mainly nonstoichiometric or undoped compounds. Combined with other characteristic features of d(f) compounds, this can lead, together with the ordinary scattering by spin disorder in magnetic semiconductors, to an unusual impurity contribution to the total scattering of carriers even in intrinsic semiconductors. A unique scheme for calculating the energy structure of the conduction-band bottom of a ferromagnetic semiconductor and the temperature and field dependences of the impurity contribution to the resistivity is proposed on the basis of a model Hamiltonian. The computed magnetoresistance ratio is negative and has a maximum near T-c. A qualitative comparison is made between the results and the experimental temperature dependences of the Hall mobility and magnetoresistance ratio in the ternary semiconductor n-HgCr2Se4, which is nonstoichiometric with respect to the chalcogen. To identify previously unobserved temperature oscillations of the resistance, a careful analysis is made of the low-temperature part of the resistance using the relations obtained. (C) 1999 American Institute of Physics. [S1063-7834(99)01701-3].

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Публикация на русском языке Гавричков, Владимир Александрович. Особенности примесного электросопротивления в ферромагнетиках с малой концентрацией носителей [Текст] / В. А. Гавричков, С. Г. Овчинников // Физ. тверд. тела. - С.-Петербург, 1999. - Т. 41 Вып. 1. - С. 68-76

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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10.


   
    Comparison of negative magnetoresistance mechanisms in manganese perovskites and chromium spinels / V. A. Gavrichkov [et al.] // Phys. Solid State. - 1999. - Vol. 41, Is. 10. - P. 1652-1655, DOI 10.1134/1.1131064. - Cited References: 17 . - ISSN 1063-7834
РУБ Physics, Condensed Matter
Рубрики:
ANISOTROPIC MAGNETORESISTANCE
   TRANSPORT-PROPERTIES

   THIN-FILMS

   ALLOYS

Аннотация: A transition of the field dependence of the electrical resistivity from a square law (similar to H-2) above T-c to a linear function (similar to H) below T-c is observed in the degenerate ferromagnetic semiconductor HgCr2Se4(n). Together with the large negative magnetoresistance, these magnetoelectric effects correspond to effects observed in the perovskite-type oxides La1-xCaxMnOdelta. Inasmuch as the undoped semiconductor HgCr2Se4 is a ferromagnet with approximately the same critical temperature as the doped semiconductor and in view of the total lack of data on the Jahn-Teller effect in this compound, we infer that our results cast doubt on existing hypotheses (polaron and binary exchange) regarding the origin of the giant magnetoresistance in La1-xCaxMnOdelta. Impurity sd scattering is discussed as a possible magnetoresistance mechanism for both compounds. (C) 1999 American Institute of Physics. [S1063-7834(99)01710-4].

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Публикация на русском языке Сравнение механизмов отрицательного магнитосопротивления в марганцевых перовскитах и хромовых шпинелях [Текст] / В. А. Гавричков, Н. Б. Иванова, С. Г. Овчинников [и др.] // Физ. тверд. тела. - Санкт-Петербург, 1999. - Т. 41 Вып. 10. - С. 1800-1803

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 117907, Russia
Krasnoyarsk State Tech Univ, Krasnoyarsk 660074, Russia
ИФ СО РАН

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ivanova, N. B.; Иванова, Наталья Борисовна; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Balaev, A. D.; Балаев, Александр Дмитриевич; Aminov, T. G.; Shabunina, G. G.; Chernov, V. K.; Petukhov, M. V.
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