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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Komogortsev S. V., Lukyanenko A. V., Yakovlev I. A., Tarasov I. A., Sukhachev A. L., Rautskii M. V., Solovyov L. A., Andryushchenko T. A., Bondarev I. A., Varnakov S. N., Volkov N. V.
Заглавие : Structure, magnetic and magnetocaloric properties of the Mn5Ge3 thin film grown on Si(111)
Колич.характеристики :14 с
Место публикации : J. Mater. Sci. - 2024. - Vol. 59, Is. 21. - P.9423-9436. - ISSN 00222461 (ISSN), DOI 10.1007/s10853-024-09755-6. - ISSN 15734803 (eISSN)
Примечания : Cited References: 79. - The study was supported by the Russian Science Foundation Grant of the № 23-22-10033, https://rscf.ru/project/23-22-10033/, Krasnoyarsk Regional Fund of Science. The authors thank the laboratory of the Magnetic MAX Materials created under the Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Division, Russian Academy of Sciences) for assistance
Аннотация: Mn5Ge3 is a ferromagnetic hexagonal crystal promising for spintronics and magnetocalorics. A systematic study and analysis of the magnetic properties of the Mn5Ge3 thin film grown on Si(111) were performed. The magnetic anisotropy of the film is determined by the shape anisotropy and the easy magnetization axis aligned along the c axis of the crystal. The uniaxial anisotropy constant Ku fully corresponds to that for a bulk single crystal, which indicates that c axis coincides with film normal. Mn5Ge3 film demonstrates high saturation magnetization MS = 900 emu/cm3 (900 kA/m) at T = 100 K and magnetocaloric effect ΔS = 3.16 ± 0.22 J kg−1 K−1 at 300 K and B = 1.5 T. ΔS is comparable to that for multicomponent or Gd rare earth films. Furthermore, a different anisotropy of the magnetocaloric effect compared to bulk Mn5Ge3 was found, which may be related to the anisotropy of the film shape and, possibly, to the domain structure. The results obtained are promising for the design and development of magnetocaloric, spintronic, and spin-caloritronic devices on a silicon platform.
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Вид документа : Статья из журнала
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Автор(ы) : Kubitza, Niels, Xie, Ruiwen, Tarasov I. A., Shen, Chen, Zhang, Hongbin, Wiedwald, Ulf, Birkel, Christina S.
Заглавие : Microwave-assisted synthesis of the new solid-solution (V1–xCrx)2GaC (0 ≤ x ≤ 1), a Pauli paramagnet almost matching the Stoner criterion for x = 0.80
Место публикации : Chem. Mater. - 2023. - Vol. 35, Is. 11. - P.4427-4434. - ISSN 08974756 (ISSN), DOI 10.1021/acs.chemmater.3c00591. - ISSN 15205002 (eISSN)
Примечания : Cited References: 54. - This work has been supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) within CRC/TRR 270, projects B03 and B02, A05 (Project-ID 405553726)
Аннотация: MAX phases that exhibit long-range magnetic order in the bulk are still very hard to synthesize. Chromium and manganese are the cutoff elements when transitioning through the 3dmetals that still form stable full and doped MAX phases, respectively. An iron-based (on the M-site) bulk MAX phase does not exist. Therefore, other strategies to induce long-range magnetic ordering in bulk MAX phases are necessary to open the path to new functional materials. Here, we demonstrate the nonconventional synthesis of a hitherto unknown MAX phase solid-solution (V1–xCrx)2GaC by microwave heating. The full series with 0 ˂ x ˂ 1 (x = 0.20, 0.40, 0.50, 0.60, 0.80) forms almost single phase with minimal differences in their morphology. Their magnetic properties, however, differ rather significantly, with a maximum susceptibility around x = 0.80. Both the experimental and theoretical/ab initio magnetic analysis confirm that the solid-solution (V1–xCrx)2GaC is an itinerant Pauli paramagnet that almost fulfills the Stoner criterion for ferromagnetic order (for compositions with x around 0.80). This is a powerful insight into how chemical composition couples with electronic structure and the resulting bulk magnetic properties because it provides crucial guidelines to produce long-range ordered magnetic MAX phases.
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Вид документа : Статья из журнала
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Автор(ы) : Tarasov A. S., Lukyanenko A. V., Yakovlev I. A., Tarasov I. A., Bondarev I. A., Sukhachev A. L., Shanidze L. V., Smolyakov D. A., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Ferromagnetic silicides and germanides epitaxial films and multilayered hybrid structures: Synthesis, magnetic and transport properties
Колич.характеристики :14 с
Место публикации : Bull. Russ. Acad. Sci.: Phys. - 2023. - Vol. 87, Suppl. 1. - P.S133-S146. - ISSN 10628738 (ISSN), DOI 10.1134/S1062873823704518. - ISSN 19349432 (eISSN)
Примечания : Cited References: 54. - The authors thank the laboratory of Magnetic MAX Materials created under Megagrant project (agreement no. 075-15-2019-1886) for providing experimental equipment and the Collective Use Center at the Krasnoyarsk Scientific Center (Siberian Branch, Russian Academy of Sciences) for assistance. The authors also thank Professor B.A. Belyaev for FMR calculationsSupported by the Russian Science Foundation, grant no. 23-22-10033, https://rscf.ru/project/23-22-10033/, Krasnoyarsk Regional Fund of Science
Аннотация: Planar and vertical hybrid structures, which combine ferromagnetic and semiconductor layers are essential for implementation and study of spin transport phenomena in semiconductors, which is crucial for the advancement and development of spintronics. We have developed approaches for the synthesis of Fe3 + xSi1 – x epitaxial thin films and demonstrated the spin accumulation effect in multiterminal devices based on Fe3 + xSi1 – x/Si. Fe3 + xSi1 – x/Ge/Fe3Si and Fe3 + xSi1 – x/Ge/Mn5Ge3 multilayer hybrid structures were synthesized on a Si(111) substrate, study of their structural, magnetic and transport properties were performed. The effect of synthesis conditions on the growth of epitaxial structures and on their magnetic and transport properties was discussed. The results obtained may prove valuable in the development and fabrication of spintronic devices.
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Вид документа : Статья из журнала
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Автор(ы) : Zavjalov A. P., Lyubas G. A., Sharafutdinov M. R., Tarasov I. A., Belov A. A., Shichalin O. O., Papynov E. K., Kriventsov V. V., Kosyanov D. Y.
Заглавие : Fabrication and thermoelectric properties of SrTiO3–TiO2 composite ceramics
Место публикации : Ceram. Int. - 2022. - Vol. 48, Is. 24. - P.36500-36514. - ISSN 02728842 (ISSN), DOI 10.1016/j.ceramint.2022.08.210. - ISSN 18733956 (eISSN)
Примечания : Cited References: 55. - This work was supported by the Russian Foundation for Basic Research (Project No. 18-29-11044). A.P.Z. appreciate the support from the Ministry of Science and Higher Education of the Russian Federation within the governmental order for the Institute of Solid State Chemistry and Mechanochemistry of SB RAS (project No. FWUS-2021-0004). D.Yu.K. is grateful to the Council on grants of the President of the Russian Federation (scholarship No. SP-3221.2022.1) for supporting the studies devoted to obtaining advanced ceramic materials. A.A.B. O.O.Sh. and E.K.P. grateful to the State Assignment of the Ministry of Science and Higher Education of the Russian Federation (topic No. 00657-2020-0006) for supporting the SEM images obtaining. The work was partially done at the shared research center SSTRC on the basis of the VEPP-4–VEPP-2000 complex at Budker Institute of Nuclear Physics of Siberian Branch of Russian Academy of Sciences
Аннотация: The paper presents the results of preparing biphase SrTiO3–TiO2 ceramics as a promising system for n-type thermoelectrics using the features of a two-dimensional electron gas. Ceramics was obtained by reactive spark plasma sintering of SrCO3 and TiO2. The dynamics of phase transformations are shown; it is clarified that phase transformations are not the driving force of sintering. The mutual stabilization of the SrTiO3 and TiO2 phases is shown. Unique data on the assessment of the temperature gradient in the system have been obtained. A comparison of the thermoelectric characteristics of biphasic ceramics and its constituent phases allows concluding that the role of the two-dimensional electron gas is reduced to modulating the properties of bulk phases. Clear signs of size quantization were detected by the X-ray luminescence method, which is expressed in the blueshift of the luminescence spectrum by 22.3 ± 0.8 meV.
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Вид документа : Статья из журнала
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Автор(ы) : Высотин, Максим Александрович, Тарасов, Иван Анатольевич, Федоров, Александр Семенович, Варнаков, Сергей Николаевич, Овчинников, Сергей Геннадьевич
Заглавие : О возможных магнитных свойствах ультратонких пленок Mn2GaC на подложках Al2O3
Место публикации : Письма в ЖЭТФ. - 2022. - Т. 116, Вып. 5. - С. 318-323. - ISSN 0370-274X, DOI 10.31857/S1234567822170098
Примечания : Библиогр.: 22. - Исследования выполняются при финансовой поддержке Российского фонда фундаментальных исследований, Правительства Красноярского края, Красноярского краевого фонда науки в рамках научного проекта # 20-42-240012, Правительства РФ в рамках гранта по созданию лабораторий мирового уровня (соглашение # 075-15-2019-1886)
Аннотация: Рассматривается вопрос о возможности роста и магнитных свойствах тонких пленок MAX-фазы Mn2GaC на подложках Al2O3 различной ориентации. В рамках геометрического подхода спрогнозированы наиболее предпочтительные ориентационные соотношения и интерфейсные плоскости в системе Mn2GaC//Al2 O3, указывающие на возможность роста на подложках сапфира С-срез (0001), S-срез(01¯1¯1), N-срез (11¯2¯3), и R-срез (0¯11¯2). С помощью метода функционала электронной плотности рассчитаны возможные магнитные свойства сплошных ультратонких пленок Mn2GaC при условии сохранения однородных растяжений/сжатий решетки MAX-фазы,вызванных ростом на предсказанных подложках: определено влияние деформации решетки Mn2GaC на магнитное упорядочение и величины магнитных моментов, оценена возможность перехода из антиферромагнитного состояния в ферромагнитное под действием внешних магнитных полей. Показано, что рост ферромагнитной пленки MAX-фазы Mn2GaC наиболее вероятен на подложках Al2O3(0001), Al2O3(11¯2¯3) и Al2O3(0¯112¯).
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Lukyanenko A. V., Tarasov A. S., Tarasov I. A., Rauckii M.V., Yakovlev I. A., Kosyrev N. N., Komarov V. A., Shanidze L. V., Varnakov S. N., Ovchinnikov S. G., Patrin G. S., Volkov N. V.
Заглавие : Magnetic properties of mn-doped Fe3+xSi1–x films synthesized on soi substrate by low temperature annealing
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 2, Sect. J: Soft and hard magnetic materials. - Ст.J.P24. - P.248-249. - ISBN 978-5-94469-051-7
Примечания : Cited References: 6. - The research was funded by Krasnoyarsk Regional Fund of Science
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Tarasov A. S., Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Platunov M. S., Volochaev M. N., Efimov, Dmitriy D., Goikhman, Aleksandr Yu., Belyaev B. A., Baron F. A., Shanidze, Lev V., Farle M., Varnakov S. N., Ovchinnikov S. G., Volkov N. V.
Заглавие : Asymmetric interfaces in epitaxial off-stoichiometric Fe3+xSi1-x/Ge/Fe3+xSi1-x hybrid structures: Effect on magnetic and electric transport properties
Коллективы : RFBRRussian Foundation for Basic Research (RFBR); Krasnoyarsk Regional Fund of Science [20-42-243007, 20-42-240012]; Government of the Russian Federation [075-15-2019-1886]; Ministry of Science and Higher Education of the Russian Federation [FZWN-2020-0008]
Место публикации : Nanomaterials. - 2022. - Vol. 12, Is. 1. - Ст.131. - ISSN 2079-4991(eISSN), DOI 10.3390/nano12010131
Примечания : Cited References: 61. - The research was funded by RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-243007, and by the Government of the Russian Federation, Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886). I.A.T. and S.N.V. thank RFBR, Krasnoyarsk Territory, and Krasnoyarsk Regional Fund of Science, project number 20-42-240012, for partial work related to the development of the simulation model of the pore autocorrelated radial distribution function coupled with the near coincidence site model, the Fe3+xSi1-x lattice distortion analysis, and processing Rutherford backscattering spectroscopy data. The Rutherford backscattering spectroscopy measurements were supported by the Ministry of Science and Higher Education of the Russian Federation (project FZWN-2020-0008)
Предметные рубрики: FILMS
ANISOTROPY
SI(001)
DEVICES
SURFACE
GROWTH
Аннотация: Three-layer iron-rich Fe3+xSi1-x/Ge/Fe3+xSi1-x (0.2 x 0.64) heterostructures on a Si(111) surface with Ge thicknesses of 4 nm and 7 nm were grown by molecular beam epitaxy. Systematic studies of the structural and morphological properties of the synthesized samples have shown that an increase in the Ge thickness causes a prolonged atomic diffusion through the interfaces, which significantly increases the lattice misfits in the Ge/Fe3+xSi1-x heterosystem due to the incorporation of Ge atoms into the Fe3+xSi1-x bottom layer. The resultant lowering of the total free energy caused by the development of the surface roughness results in a transition from an epitaxial to a polycrystalline growth of the upper Fe3+xSi1-x. The average lattice distortion and residual stress of the upper Fe3+xSi1-x were determined by electron diffraction and theoretical calculations to be equivalent to 0.2 GPa for the upper epitaxial layer with a volume misfit of -0.63% compared with a undistorted counterpart. The volume misfit follows the resultant interatomic misfit of |0.42|% with the bottom Ge layer, independently determined by atomic force microscopy. The variation in structural order and morphology significantly changes the magnetic properties of the upper Fe3+xSi1-x layer and leads to a subtle effect on the transport properties of the Ge layer. Both hysteresis loops and FMR spectra differ for the structures with 4 nm and 7 nm Ge layers. The FMR spectra exhibit two distinct absorption lines corresponding to two layers of ferromagnetic Fe3+xSi1-x films. At the same time, a third FMR line appears in the sample with the thicker Ge. The angular dependences of the resonance field of the FMR spectra measured in the plane of the film have a pronounced easy-axis type anisotropy, as well as an anisotropy corresponding to the cubic crystal symmetry of Fe3+xSi1-x, which implies the epitaxial orientation relationship of Fe3+xSi1-x (111)[0-11] || Ge(111)[1-10] || Fe3+xSi1-x (111)[0-11] || Si(111)[1-10]. Calculated from ferromagnetic resonance (FMR) data saturation magnetization exceeds 1000 kA/m. The temperature dependence of the electrical resistivity of a Ge layer with thicknesses of 4 nm and 7 nm is of semiconducting type, which is, however, determined by different transport mechanisms.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Yakovlev I. A., Visotin M. A., Rautskii M. V., Tarasov A. S., Lyashchenko S. A., Maximova O. A., Varnakov S. N., Andryushchenko T. A., Ovchinnikov S. G.
Заглавие : New ternary magnetic films of MAX phases
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : The Sixth Asian school-conference on physics and technology of nanostructured materials: Proceedings. - VLadivostok, 2022. - Ст.Plenary 10. - P.23-24. - ISBN 987-5-8044-1716-2
Примечания : Cited References: 16
Аннотация: This article is devoted to the data analysis of magneto-optical ellipsometry data when they are collected from structures with uniaxial optical anisotropy. The magneto-optical parameter, being a part of an off-diagonal tensor elements of dielectric permit tivity, was deduced through Maxwell equations consideration. The way of carrying out an experiment is also dicsussed.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tarasov I. A., Yakovlev I. A., Rautskii M. V., Bondarev I. A., Lukyanenko A. V., Sukhachev A. L., Varnakov S. N., Ovchinnikov S. G., Volkov N. V., Tarasov A. S.
Заглавие : Ferromagnetic silicides and germanides epitaxial films and multilayered hybryd structures: synthesys, magnetic and transport properties
Коллективы : Российская академия наук, Физико-технический институт им. Е.К. Завойского ФИЦ Казанского научного центра РАН, Казанский (Приволжский) федеральный университет, Euro-Asian Symposium "Trends in MAGnetism", "Trends in MAGnetism", Euro-Asian Symposium
Место публикации : VIII Euro-Asian symposium "Trends in magnetism" (EASTMAG-2022): Book of abstracts/ program com. S. G. Ovchinnikov [et al.]. - 2022. - Vol. 1, Sect.: Spintronics and magnetic nanostructures. - Ст.A.O2. - P.31-32. - ISBN 978-5-94469-051-7
Примечания : Cited References: 10. - Support by Russian Foundation for Basic Research, the Government of the Krasnoyarsk Territory
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Yakovlev I. A., Tarasov I. A.
Заглавие : Epitaxial growth of Mn5Ge3 on Si(111)
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials, Азиатская школа-конференция по физике и технологии наноструктурированных материалов
Место публикации : The Sixth Asian school-conference on physics and technology of nanostructured materials: Proceedings. - VLadivostok, 2022. - P.74-75. - ISBN 987-5-8044-1716-2
Примечания : Cited References: 9
Аннотация: The structure of Mn5Ge3 films deposited with and without different buffer layers on Si(111)7Ч7 substrates at a temperature of 390 °C are investigated by reflection high energy electron diffraction. It is shown that the 200 nm single-crystal germanide film is formed using two buffer layers with a slight manganese deficiency in the structure. But when deposition is without buffer layers, the thickness of a single-crystal film does not exceed 15 nm.
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