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Parshin, A. M.
Alignment of liquid crystals by polymers with residual amounts of solvents / A. M. Parshin, V. Y. Zyryanov, V. F. Shabanov // Sci. Rep. - 2017. - Vol. 7. - Ст. 3042, DOI 10.1038/s41598-017-03243-5. - Cited References:21. - This work was supported by the Russian Foundation for Basic Research (project No. 15-02-06924 and No. 16-53-00073). . - ISSN 2045-2322

РУБ Multidisciplinary Sciences
Рубрики:
DISCLINATIONS
INTERFACE
DEFECTS
Аннотация: The homogeneous nematic layers in liquid crystal cells with treated surfaces are affected by orientational transitions in the electric, magnetic, or temperature fields. The liquid crystal structures formed on solid or liquid surfaces find limited application in identifying the liquid-crystal states by the textures observed in polarized light. The use of surfaces prepared from polymer solutions makes it possible to significantly broaden the range of application of the liquid crystal structures. We investigate the structures with the continuous transformation of the nematic director orientation from radial to planar, which were formed by the polycarbonate surface in the presence of different residual solvents. The structures contained the disclination lines that aligned either by a plate rubbed to provide the homogeneous planar orientation in the LC layer or by a magnetic field applied along the polycarbonate film during the structure formation. The orientational transitions caused by surface treatment, temperature, and electric or magnetic fields in these structures are observed. The comparison of temperature critical distance as well as electric and magnetic coherence lengths with equilibrium length calculated from the expression for the free energy of the nematic is performed. The electro-optical characteristics of the nematic structures are obtained.

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Держатели документа:
Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk, Russia.
Siberian Fed Univ, Krasnoyarsk 660041, Russia.

Доп.точки доступа:
Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Shabanov, V. F.; Шабанов, Василий Филиппович; Паршин, Александр Михайлович; Russian Foundation for Basic Research [15-02-06924, 16-53-00073]
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Andreev reflections and experimental current-voltage characteristics of break junctions of polycrystalline HTSC / M. I. Petrov [et al.] // Physica C. - 2004. - Vol. 408: 7th International Conference on Materials and Mechanisms of Superconductive and High Temperature Superconductors (MAY 25-30, 2003, Rio de Janeiro, BRAZIL). - P. 620-622, DOI 10.1016/j.physc.2004.03.085. - Cited References: 3 . - ISSN 0921-4534

РУБ Physics, Applied

Кл.слова (ненормированные):
Andreev reflections -- break junction -- current-voltage characteristics -- Andreev reflections -- Break junction -- Current-voltage characteristics -- Andreev reflections -- Break junctions -- Elastic scattering -- Lattice defects -- Negative differential resistance -- Electric fields -- Heuristic methods -- Hysteresis -- Microcracks -- Polycrystalline materials -- Probability density function -- Quasicrystals -- Superconducting materials -- Yttrium barium copper oxides -- Current voltage characteristics
Аннотация: The temperature evolution of current-voltage characteristics (CVCs) of break junctions made from polycrystalline Y0.75Lu0.25Ba2Cu3O7 and La1.85Sr0.15CuO4 is investigated. The experimental CVCs have hysteretic features that reflect a part of a curve with negative differential resistance. The temperature evolution of the CVCs is discussed within the framework of the Kummel-Gunsenheimer-Nicolsky theory for superconductor/normal-metal/superconductor junctions considering multiple Andreev reflections. It is shown that the shape of the CVCs of break junctions is determined by the ratio of the number of "short" and "long" intergrain normal regions in the polycrystalline HTSC under investigation. (C) 2004 Elsevier B.V. All rights reserved.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Reshetnev Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia
Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany
ИФ СО РАН
Kirensky Intitute of Physics, Akademgorodok, 660036 Krasnoyarsk, Russian Federation
Reshetnev Siberian Stt. Aerosp. U., 660014 Krasnoyarsk, Russian Federation
Inst. fur Theor. Phys./Astrophys., Universitat Wurzburg, D-97074 Wurzburg, Germany

Доп.точки доступа:
Petrov, M. I.; Петров, Михаил Иванович; Gokhfeld, D. M.; Гохфельд, Денис Михайлович; Balaev, D. A.; Балаев, Дмитрий Александрович; Shaihutdinov, K. A.; Kummel, R.
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    Angular tuning of defect modes spectrum in the one-dimensional photonic crystal with liquid-crystal layer / V. G. Arkhipkin [et al.] // Eur. Phys. J. E. - 2007. - Vol. 24, Is. 3. - P297-302, DOI 10.1140/epje/i2007-10239-7. - Cited Reference Count: 28 . - NOV. - ISSN 1292-8941
Рубрики:
PERIODIC STRUCTURE
   REFRACTIVE-INDEX
   ENHANCEMENT
   LIGHT
   LASER
Кл.слова (ненормированные):
42.25.Bs Wave propagation, transmission and absorption -- 42.70.Df Liquid crystals -- 42.70.Qs Photonic bandgap materials -- Angles of incidence -- Angular tuning -- Defect modes -- Electric polarization -- Photonic bandgap materials -- Radiation losses -- Absorption -- Defects -- Light polarization -- Liquid crystals -- One dimensional -- Phase shift -- Wave propagation -- Photonic crystals
Аннотация: A one-dimensional ZrO2/SiO2 photonic crystal with a 4-n -pentyl-4'-cyanobiphenyl (5CB) nematic defect layer was used to investigate the transmission spectra of light polarized parallel and perpendicular to the liquid-crystal director at different angles of incidence. The spectra of the photonic crystal were shown to split into four polarized components T-ij at oblique incidence. When the incident angle increased, the bandgap edges and the defect modes shifted towards short wavelengths, while the amplitudes of the defect modes increased for the transverse magnetic polarization and decreased for the transverse electric polarization. The observed discrepancy between the defect mode amplitudes in the center and near the edges of the photonic bandgap was found to be related to the radiation losses inside the defect layer of a non-ideal photonic crystal. The simulated transmission spectra obtained using recurrence relations and taking into account the decay of defect modes are in good agreement with the experimental data.

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Держатели документа:
SB RAS, LV Kirensky Phys Inst, Krasnoyarsk Sci Ctr, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia

Доп.точки доступа:
Arkhipkin, V. G.; Архипкин, Василий Григорьевич; Gunyakov, V. A.; Гуняков, Владимир Алексеевич; Myslivets, S. A.; Мысливец, Сергей Александрович; Zyryanov, V. Ya.; Зырянов, Виктор Яковлевич; Shabanov, V. F.; Шабанов, Василий Филиппович
}
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Pankin, P. S.
Bound state in the continuum in an anisotropic photonic crystal supported by a full-wave phase plate / P. S. Pankin, D. N. Maksimov, I. V. Timofeev // J. Opt. Soc. Am. B. - 2022. - Vol. 39, Is. 4. - P. 968-972, DOI 10.1364/JOSAB.451034. - Cited References: 34. - Council on Grants of the President of the Russian Federation (MK-4012.2021.1.2). The authors are grateful to V.A. Stepanenko (Siberian Federal University) for helpful discussions. P. S. Pankin is grateful for the support of the President of the Russian Federation . - ISSN 0740-3224
Кл.слова (ненормированные):
Crystal defects -- Photonic crystals
Аннотация: We consider bound states in the continuum (BICs) in a 1D multilayered system of an anisotropic defect layer embedded into an anisotropic photonic crystal. We analytically demonstrate that an anisotropic defect layer embedded into anisotropic photonic crystal supports accidental BICs. These BICs can be transformed to high-Q resonances by variation of one of the system's parameters. At the same time, the BICs are remarkably robust in the sense that a true BIC can be recovered by further tuning any of the system's other parameters, leading to tunability of the resonance position.

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Держатели документа:
Kirensky Institute of Physics, FRC KSC SB RAS, Krasnoyarsk, 660036, Russian Federation
Siberian Federal University, Krasnoyarsk, 660041, Russian Federation

Доп.точки доступа:
Maksimov, D. N.; Максимов, Дмитрий Николаевич; Timofeev, I. V.; Тимофеев, Иван Владимирович; Панкин, Павел Сергеевич
}
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Bulgakov, E. N.
Bound States in Photonic Fabry-Perot Resonator Comprised of Two Nonlinear Off-Channel Defects / E. N. Bulgakov, A. F. Sadreev // JETP Letters. - 2009. - Vol. 90, Is. 12. - P. 744-749, DOI 10.1134/S0021364009240023. - Cited References: 32. - We thank Kostya Pichugin for many helpful discussions. The work was partially supported by the Russian Foundation for Basic Research, project no. 09-02-98005-Siberia. . - ISSN 0021-3640

РУБ Physics, Multidisciplinary
Рубрики:
SCATTERING-THEORY
   WAVE-GUIDE
   CONTINUUM
   MODES
Аннотация: Two off-channel nonlinear defects coupled to the photonic waveguide constitute the Fabry-Perot interfer-ometer (FPR). The defects are made from a Kerr-like nonlinear material. For the linear case such a FPR can support the bound states in the form of standing waves between the defects if the distance between them is quantized. For the nonlinear case the bound states appear for arbitrary distance between the defects however for an quantized electromagnetic intensity. For the transmission through FPR we reveal new resonances and show these are a result of coupling of the bound states with incident wave because of nonlinearity of the defects. The resonances are spaced at the eigen frequencies of bound states.

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Держатели документа:
[Bulgakov, E. N.
Sadreev, A. F.] Russian Acad Sci, Inst Phys, Krasnoyarsk 660036, Russia
[Bulgakov, E. N.] Siberian State Aerosp Univ, Krasnoyarsk, Russia
ИФ СО РАН
Institute of Physics, Academy of Sciences, Krasnoyarsk 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич; Russian Foundation for Basic Research [09-02-98005-Siberia]
}
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Bound States in Photonic Fabry-Perot Resonator with Nonlinear Off Channel Defects [Text] / Bulgakov E.N., Sadreev A.F. // Phys. Rev. B. - 2010. - Vol. 81. - P115128-12

Доп.точки доступа:
Bulgakov, E.N.; Sadreev, A.F.
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Bulgakov, E. N.
Bound states in photonic Fabry-Perot resonator with nonlinear off-channel defects / E. N. Bulgakov, A. F. Sadreev // Phys. Rev. B. - 2010. - Vol. 81, Is. 11. - Ст. 115128, DOI 10.1103/PhysRevB.81.115128. - Cited References: 73. - The work was partially supported by RFBR under Grant No. 09-02-98005 "Siberia." We are greatly acknowledge Konstantin Pichugin for many discussions. . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
CRYSTAL WAVE-GUIDES
   STATIONARY LOCALIZED STATES
   COUPLED-MODE THEORY
   OPTICAL RESONATORS
   NUCLEAR REACTIONS
   UNIFIED THEORY
   MICROCAVITIES
   TRANSMISSION
   CONTINUUM
   CIRCUITS
Аннотация: We consider a Fabry-Perot resonator (FPR) comprised of two off-channel nonlinear defects coupled to the photonic waveguide. For the linear case FPR can support bound states in the form of standing waves between the defects if a distance between them is quantized. For the nonlinear case the bound states appear for arbitrary distance between the defects if electromagnetic intensity is quantized. For transmission through the FPR we reveal additional resonances which are the result of coupling of incident wave with the bound states because of nonlinearity of the defects. The resonances are spaced at the eigenfrequencies of bound states with a width proportional to the input amplitude. The theory of the FPR based on the simple Wang and Fan model [Phys. Rev. E 68, 066616 (2003)] is complemented by the tight-binding one. The results for the transmission and bound states in these models agree with computations in real two-dimensional photonic crystal waveguide coupled with two off-channel defects fabricated from a Kerr-type material.

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Держатели документа:
[Bulgakov, Evgeny N.
Sadreev, Almas F.] Russian Acad Sci, Inst Phys, Krasnoyarsk 660036, Russia
[Bulgakov, Evgeny N.] Siberian State Aerosp Univ, Krasnoyarsk, Russia
ИФ СО РАН
Institute of Physics, Academy of Sciences, 660036 Krasnoyarsk, Russian Federation
Siberian State Aerospace University, Krasnoyarsk Rabochii, 31, Krasnoyarsk, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
}
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Bulgakov, E. N.
Bound states in the continuum in photonic waveguides inspired by defects / E. N. Bulgakov, A. F. Sadreev // Phys. Rev. B. - 2008. - Vol. 78, Is. 7. - Ст. 75105, DOI 10.1103/PhysRevB.78.075105. - Cited References: 53 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
SCATTERING-THEORY
   NUCLEAR REACTIONS
   UNIFIED THEORY
   TRANSMISSION
   ELECTRON
   MODEL
Аннотация: Photonic crystal with defect layer forms directed continuum for electromagnetic waves. Defect rods in the vicinity of the defect layer interact with the continuum and give rise to scattering of ingoing waves. We derive quantum-mechanical analog of the non-Hermitian Hamiltonian of the open system with complex eigenvalues, which describes a scattering of electromagnetic waves by the defect rods. In this formalism a bound state in the continuum (BIC) can be easily found by the condition that one of the complex eigenvalues becomes real for variation of dielectric constant of the defect rods. We numerically find BICs with discrete frequencies belong to the continuum for different arrangements of the defects and show that they are localized around the defects.

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Держатели документа:
[Bulgakov, Evgeny N.
Sadreev, Almas F.] Russian Acad Sci, Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Institute of Physics, Academy of Sciences, 660036 Krasnoyarsk, Russian Federation

Доп.точки доступа:
Sadreev, A. F.; Садреев, Алмаз Фаттахович; Булгаков, Евгений Николаевич
}
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Calculating the energy of vacancies and adatoms in a hexagonal SiC monolayer / A. A. Kuzubov [et al.] // Russ. J. Phys. Chem. A. - 2012. - Vol. 86, Is. 7. - P. 1091-1095, DOI 10.1134/S0036024412070138. - Cited References: 21 . - ISSN 0036-0244

РУБ Chemistry, Physical
Рубрики:
INITIO MOLECULAR-DYNAMICS
ELECTRONIC-PROPERTIES
ABSORPTION-SPECTRA
Кл.слова (ненормированные):
silicon carbide -- defects -- adatoms -- density functional method
Аннотация: It is noted that the development of semiconductor SiC-electronics is prevented by a low quality of grown silicon carbide single crystals. It is found that structural defects of a substrate penetrating into an epitaxial layer upon subsequent homoepitaxial growth can considerably degrade a device's characteristics. We investigate the effect of the deformation of a hexagonal SiC monolayer on vacancy stability and material properties, and study the processes of silicon and carbon adatom migration over a surface of SiC.

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Публикация на русском языке Расчет энергии вакансий и адатомов в монослое гексагонального SiC [Текст] / А. А. Кузубов [и др.] // Журн. физ. химии. - 2012. - Т. 86 № 7. - С. 1207-1211

Держатели документа:
[Kuzubov, A. A.
Eliseeva, N. S.
Tomilin, F. N.
Tolstaya, A. V.] Siberian Fed Univ, Krasnoyarsk 660041, Russia
[Kuzubov, A. A.
Krasnov, P. O.
Tomilin, F. N.
Fedorov, A. S.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Kuzubov, A. A.
Krasnov, P. O.] Siberian State Technol Univ, Krasnoyarsk 660049, Russia

Доп.точки доступа:
Kuzubov, A. A.; Кузубов, Александр Александрович; Eliseeva, N. S.; Krasnov, P. O.; Краснов, Павел Олегович; Tomilin, F. N.; Томилин, Феликс Николаевич; Fedorov, A. S.; Федоров, Александр Семенович; Tolstaya, A. V.
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10.

    Chemical group substitution enables highly efficient Mn4+ luminescence in heterovalent systems / H. Ming, Y. Zhao, Y. Zhou [et al.] // Adv. Optical Mater. - 2023. - Vol. 11, Is. 10. - Ст. 2300076, DOI 10.1002/adom.202300076. - Cited References: 36. - This work was financially supported by the National Key Research and Development Program of China (2022YFB3503800), the National Science Foundation of China (Grant Nos. 52202170 and 51972117). This work was also funded by RFBR according to the research project No. 19-52-80003 . - ISSN 2195-1071
   Перевод заглавия: Замена химической группы обеспечивает высокоэффективную люминесценцию Mn4+ в гетеровалентных системах
Кл.слова (ненормированные):
defects -- heterovalent substitution -- Mn4+ -- oxyfluoride -- phosphors
Аннотация: Defects are a double-edged sword for heterovalent metal-ion doping phosphors. Along with the luminescence tunability of phosphors bestowed by defects, their expected luminescence efficiency would also be inevitably lowered due to the presence of these quenching sites. Herein, a chemical group substitution strategy is proposed, where inorganic polyhedrons act as the smallest chemical units during the structural evolution of the doping process. Such a method can not only effectively prevent the defect generation for charge compensation in heterovalent doping systems, but also facilitate the incorporation of activators into the matrix, leading to extremely high luminescence efficiency. The concept is first confirmed energetically favorable by first-principles simulations. As a robust experimental proof, two newly reported Mn4+-incorporated hexavalent organic-inorganic hybrid oxyfluorides (TMA)2BO2F4:Mn4+ (where TMA stands for tetramethylammonium, and B = W6+ or Mo6+) present high quantum efficiency (up to 94.4%) and short lifetime (down to 2.26 ms) that are superior to the commercial red phosphor K2SiF6:Mn4+ (≈84.8%, ≈8.06 ms). Utilizing the differences in decay lifetimes and thermal quenching behaviors of (TMA)2BO2F4:Mn4+ and K2SiF6:Mn4+, a time- and temperature-resolved single-color multiplexing mode with high-safety and easy-access is developed for information security. This work offers an effective strategy to manipulate defect generation in luminescent materials.

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Держатели документа:
State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, and Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices, South China University of Technology, Guangzhou, 510641 P. R. China
Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036 Russia
Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 660041 Russia
Department of Physics, Far Eastern State Transport University, Khabarovsk, 680021 Russia
School of Physics and Optoelectronics, South China University of Technology, Guangzhou, 510641 P. R. China

Доп.точки доступа:
Ming, Hong; Zhao, Yifei; Zhou, Yayun; Molokeev, M. S.; Молокеев, Максим Сергеевич; Wang, Yuanjing; Song, Enhai; Zhang, Qinyuan
}
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