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OVCHINNIKOV, S. G.
CHANGE OF THE DENSITY OF STATES WITH HOLE DOPING IN CUO2 LAYERS / S. G. OVCHINNIKOV // Zhurnal Eksperimentalnoi Teor. Fiz. - 1993. - Vol. 103, Is. 4. - P. 1404-1410. - Cited References: 7 . - ISSN 0044-4510

РУБ Physics, Multidisciplinary

Аннотация: By means of the exact diagonalization of the many-electron hamiltonian the single-particle density of states is calculated for CuO4 cluster. For undoped case there is a dielectric gap in which new states arise with hole doping. The concentration dependence of the Fermi level is found and the critical concentration of the insulator-metal Anderson transition is evaluated.

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Patrin, G. S.
The ''easy plane easy axis'' transition in alpha-Fe2O3:Ga crystals induced by doping with terbium ions / G. S. Patrin, N. V. Volkov, V. N. Vasiliev // Phys. Lett. A. - 1997. - Vol. 230, Is. 1-2. - P. 96-98, DOI 10.1016/S0375-9601(97)00219-3. - Cited References: 10 . - ISSN 0375-9601

РУБ Physics, Multidisciplinary

Аннотация: In easy plane weak ferromagnetic alpha-Fe2O3:Ga crystals it was found that doping with a hundredth part of To ions leads to the restoration of the transition into the ''easy axis'' magnetic state. It was established that in the alpha-Fe2O3:Ga, Tb crystal the angular magnetic phase is realized. (C) 1997 Published by Elsevier Science B.V.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Vasiliev, V. N.; Патрин, Геннадий Семёнович
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Evolution of the band structure of quasiparticles with doping in copper oxides on the basis of a generalized tight-binding method / V. A. Gavrichkov [et al.] // J. Exp. Theor. Phys. - 2000. - Vol. 91, Is. 2. - P. 369-383, DOI 10.1134/1.1311997. - Cited References: 45 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
T-J MODEL
   CUPRATE SUPERCONDUCTORS
   ELECTRONIC-STRUCTURE
   EXCITATIONS
   DEPENDENCE
   TEMPERATURE
   DERIVATION
   SR2CUO2CL2
   SPECTRUM
   DENSITY
Аннотация: Two methods for stabilizing the two-hole B-3(1g) state as the ground state instead of the Zhang-Rice singlet are determined on the basis of an orthogonal cellular basis for a realistic multiband pd model of a CuO2 layer and the dispersion relations for the valence band top in undoped and doped cases are calculated. In the undoped case, aside from the valence band, qualitatively corresponding to the experimental ARPES data for Sr2CuO2Cl2 and the results obtained on the basis of the t-t'-J model, the calculations give a zero-dispersion virtual level at the valence band top itself. Because of the zero amplitude of transitions forming the virtual level the response corresponding to it is absent in the spectral density function. In consequence, the experimental ARPES data do not reproduce its presence in this antiferromagnetic undoped dielectric. A calculation of the doped case showed that the virtual level transforms into an impurity-type band and acquires dispersion on account of the nonzero occupation number of the two-hole states and therefore should be detected in ARPES experiments as a high-energy peak in the spectral density. The computed dispersion dependence for the valence band top is identical to the dispersion obtained by the Monte Carlo method, and the ARPES data for optimally doped Bi2Sr2CaCu2O8 + delta samples. The data obtained also make it possible to explain the presence of an energy pseudogap at the symmetric X point of the Brillouin band of HTSC compounds. (C) 2000 MAIK "Nauka/Interperiodica".

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Публикация на русском языке Эволюция зонной структуры квазичастиц с допированием в оксидах меди в рамках обобщенного метода сильной связи [Текст] / В. А. Гавричков [и др.] // Журн. эксперим. и теор. физ. - 2000. - Т. 118 Вып. 2. - С. 422-437

Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Div, Krasnoyarsk 660036, Russia
ИФ СО РАН

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Borisov, A. A.; Goryachev, E. G.
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Magnetic and optical properties and electron paramagnetic resonance of gadolinium-containing oxide glasses / J. . Kliava [et al.] // J. Phys.: Condens. Matter. - 2003. - Vol. 15, Is. 40. - P. 6671-6681, DOI 10.1088/0953-8984/15/40/005. - Cited References: 30 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
ABSORPTION-SPECTRA
   FARADAY-ROTATION
   SPIN-RESONANCE
   IONS
   GD3+
   SPECTROSCOPY
   BEHAVIOR
   GD-3
Кл.слова (ненормированные):
Doping (additives) -- Electronic structure -- Glass -- Lanthanum compounds -- Light absorption -- Magnetic susceptibility -- Oxides -- Paramagnetic resonance -- Positive ions -- Rate constants -- Substitution reactions -- Absorption band -- Gadolinium containing oxide glasses -- Positive Weiss constants -- Gadolinium compounds
Аннотация: Magnetic susceptibility, electron paramagnetic resonance (EPR) and optical absorption have been studied in a glass system 20La(2)O(3)-22Al(2)O(3)-23B(2)O(3)-35(SiO2 + GeO2) with a part of La2O3 substituted by Gd2O3 in different concentrations. Positive Weiss constants have been found in more heavily doped glasses and ascribed to clustering of Gd3+ ions. Computer simulations of the EPR spectra show that the short-range ordering in the environment of the Gd3+ ions is well preserved. The relative distribution widths of the ligand coordinates are less than 2%. In the more heavily doped glasses the EPR spectra are superpositions of signals arising from isolated ions and ferromagnetic clusters. The increase of Gd3+ concentration is shown to change substantially the strong optical absorption edge while only small changes of f-f absorption band characteristics are observed. This difference is associated with the different effect of the Gd ion clustering on the mechanisms of the strong absorption in the ultraviolet region and the f-f absorption.

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Держатели документа:
Univ Bordeaux 1, CPMOH, F-33405 Talence, France
SI Vavilov State Opt Inst, St Petersburg 199034, Russia
Bar Ilan Univ, Dept Chem, IL-52900 Ramat Gan, Israel
Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
RAS, SB, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
CPMOH, Universite Bordeaux-I, 33405 Talence Cedex, France
L V Kirensky Inst. of Physics, SB RAS, Krasnoyarsk 660036, Russian Federation
Bar-Ilan University, Department of Physics, Ramat-Gan 52900, Israel
Bar-Ilan University, Department of Chemistry, Ramat-Gan 52900, Israel
S V Vavilov State Optical Institute, St Petersburg 199034, Russian Federation

Доп.точки доступа:
Kliava, J.; Edelman, I. S.; Эдельман, Ирина Самсоновна; Potseluyko, A. M.; Petrakovskaja, E. A.; Петраковская, Элеонора Анатольевна; Berger, R.; Bruckental, I.; Yeshurun, Y.; Malakhovskii, A. V.; Малаховский, Александр Валентинович; Zarubina, Y. V.
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Borisov, A. A.
Doping dependence of the band structure and chemical potential in cuprates by the generalized tight-binding method / A. A. Borisov, V. A. Gavrichkov, S. G. Ovchinnikov // Mod. Phys. Lett. B. - 2003. - Vol. 17, Is. 10-12. - P. 479-486, DOI 10.1142/S0217984903005500. - Cited References: 12 . - ISSN 0217-9849

РУБ Physics, Applied + Physics, Condensed Matter + Physics, Mathematical
Рубрики:
CORRELATED ELECTRONS
SUPERCONDUCTIVITY
OXIDES
Аннотация: Quasiparticle band structure in hole doped CuO2 layer is calculated with account for strong electron correlations in the framework of multiband p-d model. For undoped layer we obtain the charge-transfer antiferromagnetic insulator. With doping unusual impurity-like quasiparticle appears at the top of the valence band with spectral weight proportional to doping concentration. In the overdoped regime the band structure in the paramagnetic phase results in the doping dependent Fermi surface in agreement to ARPES data.

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Держатели документа:
LV Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
Krasnoyarsk State Univ, Theoret Phys Chair, Krasnoyarsk 660041, Russia
ИФ СО РАН

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; International Conference on Modern Problems in Superconductivity(3 ; 2002 ; Sept. ; 9-14 ; Yalta, Ukrain)
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Borisov, A. A.
Temperature and concentration dependences of the electronic structure of copper oxides in the generalized tight binding method / A. A. Borisov, V. A. Gavrichkov, S. G. Ovchinnikov // J. Exp. Theor. Phys. - 2003. - Vol. 97, Is. 4. - P. 773-780, DOI 10.1134/1.1625067. - Cited References: 25 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
SUPERCONDUCTING-GAP ANISOTROPY
   BAND-STRUCTURE
   FERMI-SURFACE
   NORMAL-STATE
   BI2SR2CACU2O8+DELTA
   EVOLUTION
Кл.слова (ненормированные):
Doping (additives) -- Electron transitions -- Electronic structure -- Fermi level -- Fermi surface -- Electron correlations -- Pseudogap -- Tight binding method -- Valence band -- Copper oxides
Аннотация: The electronic structure of p-type doped HTSC cuprates is calculated by explicitly taking into account strong electron correlations. The smooth evolution of the electronic structure from undoped antiferromagnetic to optimally and heavily doped paramagnetic compositions is traced. For a low doping level, in-gap impurity-type states are obtained, at which the Fermi level is pinned in the low-doping region. These states are separated by a pseudogap from the valence band. The Fermi surfaces calculated for the paramagnetic phase for various concentrations of holes are in good agreement with the results of ARPES experiments and indicate a gradual change in the Fermi surface from the hole type to the electron type. (C) 2003 MAIK "Nauka/Interperiodica".

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Публикация на русском языке Борисов, Алексей Александрович. Температурная и концентрационная зависимости электронной структуры оксидов меди в обобщенном методе сильной связи [Текст] / А. А. Борисов, В. А. Гавричков, С. Г. Овчинников // Журн. эксперим. и теор. физ. - 2003. - Т. 124 Вып. 4. - С. 862-870

Держатели документа:
Russian Acad Sci, Siberian Div, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич
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Effective parameters of the band dispersion in n-type high-T-c superconductors / M. M. Korshunov [et al.] // Physica C. - 2004. - Vol. 402, Is. 4. - P. 365-370, DOI 10.1016/j.physc.2003.10.017. - Cited References: 32 . - ISSN 0921-4534

РУБ Physics, Applied
Рубрики:
DOPED CUPRATE SUPERCONDUCTORS
   TIGHT-BINDING METHOD
   QUASI-PARTICLES
   COPPER OXIDES
   LA2-XSRXCUO4
   SYMMETRY
   MODEL
   EVOLUTION
   ORDER
Кл.слова (ненормированные):
high-T-c superconductivity -- electronic correlations -- electron-doped cuprates -- Electron-doped cuprates -- Electronic correlations -- High-Tc superconductivity -- Approximation theory -- Atomic physics -- Band structure -- Binding energy -- Charge transfer -- Correlation methods -- Doping (additives) -- Electronic structure -- Hamiltonians -- Mathematical models -- Mathematical operators -- Oxide superconductors -- Perturbation techniques -- Photoelectron spectroscopy -- Atomic orbitals -- Conduction band -- Electron doped cuprates -- Electron spins -- Valence band -- High temperature superconductors
Аннотация: The electronic structure of electron-doped cuprates is discussed in the regions of small and optimal doping. For optimal doping we obtain the parameters from a simple tight-binding analysis by fitting ARPES data, and for small doping we study the band structure by the generalized tight-binding method that takes strong electronic correlations into account explicitly. This method has also reproduced well the ARPES data for small doping. The effective low-energy Hamiltonian is the t-t'-J model with hopping parameters t and t'. We compare both methods and find very good agreement for the value of t while t' is different because it is caused by the different contribution of the short-range spin correlations. (C) 2003 Elsevier B.V. All rights reserved.

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Держатели документа:
Free Univ Berlin, Inst Theoret Phys, D-14195 Berlin, Germany
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
ИФ СО РАН
L.V. Kirensky Institute of Physics, Siberian Branch, Russian Academy of Science, Krasnoyarsk 660036, Russian Federation
Inst. fur Theoretische Physik, Freie Universitat Berlin, Arnimallee 14, D-14195 Berlin, Germany

Доп.точки доступа:
Korshunov, M. M.; Коршунов, Максим Михайлович; Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Manske, D.; Eremin, I.
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Prediction of the in-gap states above the top of the valence band in undoped insulating cuprates due to the spin-polaron effect / S. G. Ovchinnikov [et al.] // J. Phys.: Condens. Matter. - 2004. - Vol. 16, Is. 8. - P. L93-L100, DOI 10.1088/0953-8984/16/8/L04. - Cited References: 25 . - ISSN 0953-8984

РУБ Physics, Condensed Matter
Рубрики:
ELECTRONIC-STRUCTURE
   LA2-XSRXCUO4
   MODEL
   ANTIFERROMAGNETISM
   SPECTRA
   OXIDES
Кл.слова (ненормированные):
Quasiparticle band structure -- Spin-polaron effect -- Antiferromagnetic materials -- Approximation theory -- Doping (additives) -- Electronic structure -- Hamiltonians -- Insulation -- Magnetic fields -- Strontium compounds -- Thermal effects -- Lanthanum compounds
Аннотация: In the framework of the generalized tight binding method we have calculated the quasiparticle band structure and the spectral functions of the undoped cuprates such as La2CuO4, Sr2CUO2Cl2 etc. Due to spin fluctuations the in-gap state appears above the top of the valence band in the undoped antiferromagnetic insulator similar to in-gap states induced by hole doping. In the ARPES experiments the in-gap states can be detected as weak low energy satellites.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
ИФ СО РАН
L V Kirensky Institute of Physics, Siberian Branch, Russian Academy of Science, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Borisov, A. A.; Gavrichkov, V. A.; Гавричков, Владимир Александрович; Korshunov, M. M.; Коршунов, Максим Михайлович
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Gavrichkov, V. A.
The band structure of n-type cuprate superconductors with the T '(T) structure taking into account strong electron correlation / V. A. Gavrichkov, S. G. Ovchinnikov // J. Exp. Theor. Phys. - 2004. - Vol. 98, Is. 3. - P. 556-564, DOI 10.1134/1.1705708. - Cited References: 18. - This work was financially supported by the Russian Foundation for Basic Research (project no. 03-02-16124), RFFI-KKFN “Eniseœ” (project no. 02-02-97705), INTAS (project no. 01-0654), integration program of URO and Siberian Division, Russian Academy of Sciences . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
QUASI-PARTICLES
   COPPER OXIDES
   TEMPERATURE
   LA2-XSRXCUO4
   ND2-XCEXCUO4
   EVOLUTION
   MOMENTS
Кл.слова (ненормированные):
Dielectric properties -- Electric conductance -- Electron transitions -- Electronic structure -- Fermi level -- Phase diagrams -- Semiconductor doping -- Conduction bands -- Electron correlation -- Spectral density -- Superconducting materials
Аннотация: The spectral density, dispersion relations, and the position of the Fermi level for n-doped compositions based on NCO and LCO were calculated within the framework of the generalized tight binding method. As distinguished from LCO, the dielectric gap in NCO is nonlinear in character. We observe a virtual level both at the bottom of the conduction band and at the top of the valence band in both compounds. However, its position corresponds to the extreme bottom of the conduction band in LCO and is 0.1 - 0.2 eV above the bottom in NCO. This explains why we observe Fermi level pinning in n-LCO as the concentration of the doping component grows and reproduce its absence in NCCO at low doping values. We also found both compositions to be unstable in a narrow concentration range with respect to a nonuniform charge density distribution. The relation between the phase diagram for NCCO and the calculated electronic structure is discussed. (C) 2004 MAIK "Nauka/Interperiodica".

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Публикация на русском языке Гавричков, Владимир Александрович. Зонная структура купратных сверхпроводников n-типа с T'(T)-структурой при учете сильных электронных корреляций [Текст] / В. А. Гавричков, С. Г. Овчинников // Журн. эксперим. и теор. физ. - 2004. - Т. 125 Вып. 3. - С. 630-639

Держатели документа:
Russian Acad Sci, Siberian Div, Kirenskii Inst Phys, Krasnoyarsk 660036, Russia
ИФ СО РАН
Kirenskii Institute of Physics, Siberian Division, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk, 660036, Russian Federation

Доп.точки доступа:
Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Гавричков, Владимир Александрович
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10.

Parameters of the effective singlet-triplet model for band structure of high-T-c cuprates by alternative approaches / M. M. Korshunov [et al.] // J. Exp. Theor. Phys. - 2004. - Vol. 99, Is. 3. - P. 559-565, DOI 10.1134/1.1809685. - Cited References: 48 . - ISSN 1063-7761

РУБ Physics, Multidisciplinary
Рубрики:
DENSITY-FUNCTIONAL CALCULATION
   TIGHT-BINDING METHOD
   COPPER OXIDES
   ENERGY-BANDS
   SUPERCONDUCTORS
   HOLE
   LA2-XSRXCUO4
   PLANE
   SR2CUO2CL2
   INSULATORS
Кл.слова (ненормированные):
Band structure -- Carbon dioxide lasers -- Copper oxides -- Doping (additives) -- Parameter estimation -- Electron systems -- Generalized tight binding (GTB) -- Parameters extraction -- Singlet triplet model -- Technetium compounds
Аннотация: We consider the problem of determining the parameters for high-T-c superconducting copper oxides. Alternative approaches, the ab initio LDA and LDA + U calculations and the generalized tight-binding (GTB) method for strongly correlated electron systems, are used to calculate hopping and exchange parameters of the effective singlet-triplet model for the CuO2 layer. The resulting parameters are in remarkably good agreement with each other and with parameters extracted from experiment. This set of parameters is proposed for proper quantitative description of the physics of hole-doped high-T-c cuprates in the framework of effective models. (C) 2004 MAIK "Nauka / Interperiodica".

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Держатели документа:
Russian Acad Sci, Kirensky Inst Phys, Siberian Div, Krasnoyarsk 660036, Russia
Russian Acad Sci, Inst Met Phys, Ural Div, Ekaterinburg 620219, Russia
ИФ СО РАН
Kirensky Institute of Physics, Siberian Division, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation
Institute of Metal Physics, Ural Division, Russian Academy of Sciences, Ekaterinburg, 620219, Russian Federation

Доп.точки доступа:
Korshunov, M. M.; Коршунов, Максим Михайлович; Gavrichkov, V. A.; Гавричков, Владимир Александрович; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Pchelkina, Z. V.; Nekrasov, I. A.; Korotin, M. A.; Anisimov, V. I.
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