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Electromagnetic density of states and absorption of radiation by aggregates of nanospheres with multipole interactions / V. A. Markel [et al.] // Phys. Rev. B. - 2004. - Vol. 70, Is. 5. - Ст. 54202, DOI 10.1103/PhysRevB.70.054202. - Cited References: 81 . - ISSN 1098-0121

РУБ Physics, Condensed Matter
Рубрики:
DISCRETE-DIPOLE APPROXIMATION
   ENHANCED RAMAN-SCATTERING
   METAL FRACTAL CLUSTERS
   OPTICAL-PROPERTIES
   SELECTIVE PHOTOMODIFICATION
   DISORDERED CLUSTERS
   NUMERICAL-SIMULATION
   SPECTRAL DEPENDENCE
   PARTICULATE MATTER
   LIGHT-SCATTERING
Кл.слова (ненормированные):
carbon -- iron -- palladium -- silver -- article -- dipole -- electromagnetic field -- geometry -- mathematical analysis -- molecular interaction -- nanoparticle -- radiation absorption
Аннотация: We calculate the quasistatic electromagnetic density of states for aggregates of touching spheres, in particular, linear chains and computer-generated random fractal aggregates. Multipole moments with orders of up to L=64 are taken into account for random aggregates with the number of particles of up to N=100 and up to L=8000 for linear chains. Extensive comparisons with the dipole approximation and geometrical cluster renormalization method are performed. Extinction spectra are calculated for several metals and black carbon. Long wavelength electromagnetic properties of fractal aggregates are considered in details.

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Держатели документа:
Univ Penn, Dept Radiol, Philadelphia, PA 19104 USA
Jackson State Univ, Dept Phys, Jackson, MS 39217 USA
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia
Krasnoyarsk State Tech Univ, Dept Phys & Engn, Krasnoyarsk 660028, Russia
Natl Acad Sci Ukraine, Inst Surface Chem, UA-03164 Kiev, Ukraine
ИФ СО РАН
Department of Radiology, University of Pennsylvania, Philadelphia, PA 19104, United States
Department of Physics, Jackson State University, Jackson, MS 39217, United States
L. V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation
Moscow Inst. of Phys. and Technology, Dolgoprudny, Moscow Region 141700, Russian Federation
Dept. of Physics, and Engineering, Krasnoyarsk State Tech. University, Krasnoyarsk 660028, Russian Federation
Institute of Surface Chemistry, Natl. Academy of Sciences of Ukraine, 17 General Naumov St., 03164 Kiev, Ukraine

Доп.точки доступа:
Markel, V. A.; Pustovit, V. N.; Karpov, S. V.; Карпов, Сергей Васильевич; Obuschenko, A. V.; Gerasimov, V. S.; Герасимов, Валерий Сергеевич; Isaev, I. L.; Исаев, Иван Леонидович
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Spectroscopic studies of fractal aggregates of silver nanospheres undergoing local restructuring / S. V. Karpov [et al.] // J. Chem. Phys. - 2006. - Vol. 125, Is. 11. - Ст. 111101, DOI 10.1063/1.2229202. - Cited References: 30 . - ISSN 0021-9606

РУБ Physics, Atomic, Molecular & Chemical
Рубрики:
ENHANCED RAMAN-SCATTERING
   SMALL-PARTICLE COMPOSITES
   OPTICAL-PROPERTIES
   DISORDERED CLUSTERS
   NONLINEAR OPTICS
   LOCALIZATION
   NANOPARTICLES
   EIGENMODES
   BOUNDS
Кл.слова (ненормированные):
Large-scale fractal geometry -- Nonlinear optical responses -- Restructuring -- Silver nanospheres -- Aggregates -- Colloids -- Electromagnetic fields -- Fractals -- Nonlinear optics -- Sampling -- Spectroscopic analysis -- Silver
Аннотация: We present an experimental spectroscopic study of large random colloidal aggregates of silver nanoparticles undergoing local restructuring. We argue that such well-known phenomena as strong fluctuation of local electromagnetic fields, appearance of "hot spots" and enhancement of nonlinear optical responses depend on the local structure on the scales of several nanosphere diameters, rather than the large-scale fractal geometry of the sample. (c) 2006 American Institute of Physics.

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Держатели документа:
Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
Krasnoyarsk State Tech Univ, Dept Phys & Engn, Krasnoyarsk 660028, Russia
Univ Penn, Dept Radiol, Philadelphia, PA 19104 USA
Univ Penn, Dept Bioengn, Philadelphia, PA 19104 USA
ИФ СО РАН
L. V. Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk 660036, Russian Federation
Department of Physics and Engineering, Krasnoyarsk State Technical University, Krasnoyarsk 660028, Russian Federation
Departments of Radiology and Bioengineering, University of Pennsylvania, Philadelphia, PA 19104, United States

Доп.точки доступа:
Karpov, S. V.; Карпов, Сергей Васильевич; Gerasimov, V. S.; Герасимов, Валерий Сергеевич; Isaev, I. L.; Исаев, Иван Леонидович; Markel, V. A.
}
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Optically driven conductivity and magnetoresistance in a manganite-based tunnel structure / N. V. Volkov [et al.] // J. Phys. D. - 2009. - Vol. 42, Is. 20. - Ст. 205009, DOI 10.1088/0022-3727/42/20/205009. - Cited References: 13. - This study was supported by the Russian Foundation for Basic Research (Projects Nos 08-02-00259-a and 08-02-00397-a) and the Division of Physical Sciences of the RAS, Programme 'Spin-dependent Effects in Solids and Spintronics' (Project No 2.4.2 of the Siberian Branch of the RAS). . - ISSN 0022-3727

РУБ Physics, Applied
Рубрики:
JUNCTIONS
Кл.слова (ненормированные):
Conducting layers -- Current-in-plane geometry -- Dielectric layer -- Electron hole pairs -- Interband absorption -- Magnetic tunnel junction -- Magnetic tunnels -- Multilayer structures -- Optical radiations -- Photoinduced change -- Potential barriers -- Radiation power density -- Threshold characters -- Tunnel structures -- Electric resistance -- Lanthanum -- Light -- Magnetic field effects -- Magnetoelectronics -- Magnetoresistance -- Manganese compounds -- Oxide minerals -- Photovoltaic effects -- Semiconductor junctions -- Transport properties -- Vehicular tunnels -- Wind tunnels -- Tunnel junctions
Аннотация: In the multilayer structure, La(0.7)Sr(0.3)MnO(3)/depleted manganite layer/MnSi, the photovoltaic effect has been discovered. The depleted manganite layer in the structure is dielectric and serves as a potential barrier between the ferromagnetic conducting La(0.7)Sr(0.3)MnO(3) and MnSi layers by the formation of a magnetic tunnel junction. The photoinduced changes in the transport properties of the magnetic tunnel structure have been observed in the current-in-plane geometry. The changes are reversible and saturate at radiation power densities over 30 mW cm(-2). The photovoltaic effect has a threshold character: it reveals only at h nu > 1.17 eV. Most likely, the effect of optical radiation is related to the formation of electron-hole pairs due to interband absorption of light in the dielectric layer. A photocurrent through the tunnel junctions separating the conducting layers causes a redistribution of the current channels between the conducting layers, which influences the conductivity and the magnetoresistance of the structure.

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Держатели документа:
[Volkov, N. V.
Kim, P. D.
Eremin, E. V.
Patrin, G. S.] Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, Russia
[Volkov, N. V.
Patrin, G. S.] Siberian Fed Univ, Inst Engn Phys, Krasnoyarsk 660041, Russia
[Lee, C. G.] Changwon Natl Univ, Sch Nano & Adv Mat Engn, Chang Won 641773, Gyeongnam, South Korea
[Eremin, E. V.] Siberian State Aerosp Univ, Inst Space Technol, Krasnoyarsk 660014, Russia
ИФ СО РАН
Kirensky Institute of Physics, Russian Academy of Science, Siberian Branch, Krasnoyarsk 660036, Russian Federation
Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk 660041, Russian Federation
Changwon National University, School of Nano and Advanced Materials Engineering, Gyeongnam 641-773, Changwon, South Korea
Institute of Space Technology, Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Lee, C. G.; Kim, P. D.; Ким, Пётр Дементьевич; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Russian Foundation for Basic Research [08-02-00259-a, 08-02-00397-a]; Division of Physical Sciences of the RAS; [2.4.2]
}
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    Analytic gradient for the adaptive frozen orbital bond detachment in the fragment molecular orbital method / D. G. Fedorov [et al.] // Chem. Phys. Lett. - 2009. - Vol. 477, Is. 1-3. - P. 169-175, DOI 10.1016/j.cplett.2009.06.072. - Cited Reference Count: 49. - Гранты: We thank Professor M. Suenaga of Kyushu University for continuing his development of the modeling software FACIO and its FMO interface. D. G. F. and K. K. were supported by the a Grant-in- Aid for Scientific Research (JSPS, Japan) and the Next Generation SuperComputing Project, Nanoscience Program (MEXT, Japan). J.H.J. was supported by a Skou Fellowship from the Danish Research Agency (Forskningsradet for Natur og Univers). - Финансирующая организация: JSPS, Japan; Next Generation SuperComputing Project; MEXT, Japan; Danish Research Agency . - JUL 28. - ISSN 0009-2614
Рубрики:
DENSITY-FUNCTIONAL THEORY
   GEOMETRY OPTIMIZATIONS
   SEMICONDUCTOR NANOWIRES
   SILICON NANOWIRES
   METHOD FMO
   ENERGY
   SURFACES
   RECONSTRUCTION
   CHEMISTRY
   PROTEINS
Кл.слова (ненормированные):
Energy gradients -- Fragment molecular orbital methods -- Future applications -- Geometry optimization -- Numerical criteria -- Silicon Nanowires -- Molecular modeling -- Molecular orbitals
Аннотация: We have developed and implemented the analytic energy gradient for the bond detachment scheme in the fragment molecular orbital method (FMO) suitable to describe solids, and applied it to the geometry optimization of a silicon nanowire at several levels of theory. In addition, we have examined in detail the effects of the particular choice of the fragmentation upon the accuracy and introduced a number of numerical criteria to characterize the errors. The established route is expected to provide guidance for future applications of FMO to surfaces, solids and nanosystems. (C) 2009 Elsevier B. V. All rights reserved.

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Держатели документа:
Natl Inst Adv Ind Sci & Technol, RICS, Tsukuba, Ibaraki 3058568, Japan
SB RAS, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Siberian Fed Univ, Krasnoyarsk 660041, Russia
Univ Copenhagen, Dept Chem, DK-2100 Copenhagen, Denmark
Kyoto Univ, Grad Sch Pharmaceut Sci, Sakyo Ku, Kyoto 6068501, Japan

Доп.точки доступа:
Fedorov, D.G.; Kitaura, K.; Avramov, P. V.; Аврамов, Павел Вениаминович; Jensen, J.H.
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Magnetic tunnel junction in the current-in-plane geometry: Magnetoresistance; photovoltaic effect [Text] / N. V. Volkov, E. V. Eremin [et al.] // Rare Metals. - 2009. - Vol. 28, Spec. Issue. - P170-173

Доп.точки доступа:
Volkov, N.V.; Eremin, E.V.; Patrin, G.S.; Kim, P.D.
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Magnetic tunnel structures in the current-in-plane geometry: channel switching, magnetoresistance, and photovoltaic effect [Text] / N. V. Volkov, E. V. Eremin [et al.] // IV Euro-Asian Symposium "Trends in MAGnetism" Nanospintronics (EASTMAG-2010). School for young scientist "Spintronics" : June 28 - Lule 2, 2010"Book of abstracts. - Ekaterinburg, 2010. - P. 38

РИНЦ

Доп.точки доступа:
Volkov, N.V.; Eremin, E.V.; Tarasov, A.S.; Patrin, G.S.; Kim, P.D.; Varnakov, S.N.; Ovchinnikov, S.G.; Euro-Asian Symposium "Trends in MAGnetism"(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); "Trends in MAGnetism", Euro-Asian Symposium(4 ; 2010 ; Jun.-Jul. ; Ekaterinburg); Уральское отделение РАН
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Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry / N. V. Volkov [et al.] // Journal of Applied Physics. - 2011. - Т. 109, № 12. - P123924, DOI 10.1063/1.3600056 . - ISSN 0021-8979. - ISSN 1089-7550

РИНЦ
Держатели документа:
Kirensky Institute of Physics,Russian Academy of Sciences,Siberian Branch
Siberian State Aerospace University

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович
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Magnetic-field- and bias-sensitive conductivity of a hybrid Fe/SiO 2/p-Si structure in planar geometry / N. V. Volkov [et al.] // J. Appl. Phys. - 2011. - Vol. 109, Is. 12. - Ст. 123924. - P. , DOI 10.1063/1.3600056 . - ISSN 0021-8979
Кл.слова (ненормированные):
Channel switching -- Comparative analysis -- Fe films -- Fe layer -- Ferromagnetic films -- High temperature -- Hybrid structure -- Inversion layer -- Metal-insulator-semiconductors -- Negative magneto-resistance -- Planar geometries -- Positive magnetoresistance -- Schottky barriers -- Semiconductor substrate -- Temperature variation -- Weak localization -- Critical currents -- Electric resistance -- Ferromagnetic materials -- Geometry -- Magnetic fields -- Magnetoelectronics -- Magnetoresistance -- Metal insulator boundaries -- Metal insulator transition -- MIS devices -- Schottky barrier diodes -- Silicon -- Silicon compounds -- Switching circuits -- Transport properties -- Semiconducting silicon
Аннотация: Pronounced magnetic-field- and bias-sensitive features of the transport properties of a Fe/SiO2/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO 2/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the metal-insulator-semiconductor (MIS) transition with a Schottky barrier near the interface between SiO2 and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and a magnetic field. Positive magnetoresistance of the structures at high temperatures is determined, most likely, by disorder-induced weak localization. In the structure with the gap, negative magnetoresistance is observed at certain temperature and bias. Its occurrence should be attributed to an inversion layer formed in the semiconductor near the SiO2/p-Si interface when MIS transition is in the inversion regime. В© 2011 American Institute of Physics.

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Держатели документа:
Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch, Krasnoyarsk, 660036, Russian Federation
Siberian State Aerospace University, Krasnoyarsk 660014, Russian Federation

Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Tarasov, A. S.; Тарасов, Антон Сергеевич; Eremin, E. V.; Еремин, Евгений Владимирович; Varnakov, S. N.; Варнаков, Сергей Николаевич; Ovchinnikov, S. G.; Овчинников, Сергей Геннадьевич; Zharkov, S. M.; Жарков, Сергей Михайлович
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Response of a manganite-based magnetic tunnel structure to microwave radiation / N. V. Volkov [et al.] // Diffusion and Defect Data Pt.B: Solid State Phenomena. - 2012. - Vol. 190. - P. 125-128, DOI 10.4028/www.scientific.net/SSP.190.125 . - ISBN 978. - ISBN 9783037854365
Кл.слова (ненормированные):
Magnetic tunnel structure -- Microwave detection effect -- Spintronics -- Current flowing -- Current-in-plane geometry -- Magnetic tunnels -- Magnetization dynamics -- Microwave detection -- Non-Linearity -- Rectification effects -- Spin-polarized currents -- Voltage signals -- Magnetic materials -- Magnetoelectronics -- Manganese oxide -- Microwaves -- Magnetism
Аннотация: We demonstrate that a magnetic tunnel structure irradiated by microwaves can generate a significant voltage signal due to the rectification effect. The measurements were carried out using current-in-plane geometry with a current flowing parallel to the interfaces in the structure. A value of the microwave-induced voltage strongly depends on a bias current and can be driven by a magnetic field. The rectification effect is discussed both in "Classical" terms of nonlinearity of the current-voltage characteristic and using a mechanism that involves the interplay between the spinpolarized current and magnetization dynamics in the magnetic tunnel structure. В© (2012) Trans Tech Publications.

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Доп.точки доступа:
Volkov, N. V.; Волков, Никита Валентинович; Rautskii, M. V.; Рауцкий, Михаил Владимирович; Eremin, E. V.; Еремин, Евгений Владимирович; Patrin, G. S.; Патрин, Геннадий Семёнович; Kim, P. D.; Ким, Петр Дементьевич; Lee, C. G.; Moscow International Symposium on Magnetism(5 ; 2011 ; Aug. ; 21-25 ; Moscow)
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10.

Morozov, E. V.
MRI Comparative Study of Container Geometry Impact on the PMMA Spheres Sedimentation / E. V. Morozov, O. V. Shabanova, O. V. Falaleev // Appl. Magn. Reson. - 2013. - Vol. 44, Is. 5. - P. 619-636, DOI 10.1007/s00723-012-0432-8. - Cited References: 31 . - ISSN 0937-9347

РУБ Physics, Atomic, Molecular & Chemical + Spectroscopy
Рубрики:
OPAL PHOTONIC CRYSTALS
   SUSPENSIONS
   PARTICLES
   VELOCITY
Аннотация: Nuclear magnetic resonance (NMR) imaging results are presented for the comparative study of sedimentation of the polymethylmethacrylate colloidal suspensions with spherical particle diameters of 475, 350 and 255 nm. The time evolution of the particle volume fraction in the sedimenting system, velocity of the fluid/suspension interface, interface broadening, and sediment growth velocity are measured against the system concentration as well as the container geometry. Using the experimental data the hindered settling function is evaluated. The influence of the container geometry on the parameters defining the hindered settling function in different approaches is evaluated for the first time. The limiting value of the particle diameter is estimated at which the container geometry has no impact any longer. This effect can be explained by the microscale structure persisting at low Peclet numbers. In addition, the influence of the container geometry on interface broadening and sediment formation for different particle diameters and volume fractions is studied. Spontaneous sediment packing induced by a modified container geometry has been found. NMR imaging has proven to be a highly efficient research tool for studying sedimentation at low Peclet numbers.

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Держатели документа:
Russian Acad Sci, Siberian Branch, LV Kirensky Phys Inst, Krasnoyarsk 660036, Russia
Russian Acad Sci, Siberian Branch, Special Design & Technol Bur Nauka, Krasnoyarsk 660049, Russia

Доп.точки доступа:
Shabanova, O. V.; Falaleev, O. V.; Морозов, Евгений Владимирович
}
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