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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volochaev M. N., Kalinin, Yu E., Kashirin M. A., Makagonov V. A., Pankov, S. Yu, Bassarab V. V.
Заглавие : Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films
Коллективы : Ministry of Science and Higher Education of the Russian Federation [3.1867.2017/4.6]
Место публикации : Semiconductors. - 2019. - Vol. 53, Is. 11. - P.1465-1471. - ISSN 1063-7826, DOI 10.1134/S106378261911023X. - ISSN 1090-6479(eISSN)
Примечания : Cited References: 16. - This study was carried out in the framework of the state assignment of the Ministry of Science and Higher Education of the Russian Federation, project no. 3.1867.2017/4.6.
Предметные рубрики: HETEROSTRUCTURES
Аннотация: (ZnO/SiO2)25 thin-film multilayers consisting of nanocrystalline ZnO layers and amorphous SiO2 spacers with a bilayer thickness from 6 to 10 nm are synthesized in a single deposition process. An analysis of the temperature dependences of the electrical resistivity of (ZnO/SiO2)25 thin films shows that, in the temperature range of 77–300 K, the dominant conductivity mechanism successively changes from hopping conductivity with a variable hopping length in a narrow energy band near the Fermi level at temperatures of 77–250 K to thermally activated impurity conductivity around room temperature. Using the obtained temperature dependences of the electrical resistivity, the effective density of localized states at the Fermi level and the activation energy of impurity levels are estimated. The effect of heat treatment on the structure and electrical properties of the synthesized films is examined. It is established that in (ZnO/SiO2)25 thin-film systems at temperatures of 580–600°C, the ZnO and SiO2 layers chemically interact, which is accompanied by destruction of the multilayer structure and formation of the Zn2SiO4 compound with a tetragonal structure (sp. gr. I-42d).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Begunovich L. V., Kuklin A. V., Visotin M. A., Kuzubov A. A., Tomilin F. N., Tarasov A. S., Mikhalev Y. G., Avramov P. V.
Заглавие : Triple VTe2/graphene/VTe2 heterostructures as perspective magnetic tunnel junctions
Место публикации : Appl. Surf. Sci. - 2020. - Vol. 510. - Ст.145315. - ISSN 01694332 (ISSN), DOI 10.1016/j.apsusc.2020.145315
Примечания : Cited References: 67. - This work was supported by the government contract of the Ministry of Science and Higher Education of the Russian Federation to Siberian Federal University (Grant No. 16.1455.2017/PCh ) and Russian Foundation for Basic Research , Government of Krasnoyarsk Territory , Krasnoyarsk Regional Fund of Science to the research project: “Quantum chemical modeling of Bychkov-Rashba interfaces based on transition metal compounds and nanoscaled organic fragments”. P.V.A. and A.V.K. gratefully acknowledges the financial support of National Research Foundation of Republic of Korea for support under Grant No. NRF-2017R1A2B4004440 . A.V.K. also acknowledges the US Air Force Office of Scientific Research (contract FA-9550-18-1-0032) for support. The authors would like to thank Information Technology Center, Novosibirsk State University, Institute of Computational Modelling of SB RAS, Krasnoyarsk for providing the access to supercomputer facilities, and Irkutsk Supercomputer Center of SB RAS for providing the access to HPC-cluster “Akademik V.M. Matrosov” (Irkutsk Supercomputer Center of SB RAS, Irkutsk: ISDCT SB RAS; http://hpc.icc.ru, accessed 13.05.2019 )
Аннотация: New perspective 1.4 nm thick spin-polarized triple heterostructures based on graphene sandwiched between two vanadium ditelluride monolayers (VTe2/graphene/VTe2) were studied using ab initio DFT technique. Both possible trigonal prismatic (H-VTe2) and octahedral (T-VTe2) VTe2 phases were considered to design and study graphene-based heterostructures. It was shown that the interaction with graphene changes the electronic structure of 2D T-VTe2 from metallic to half-metallic, making T phase perspective to be used for magnetic tunnel junctions. The electronic subsystem of graphene fragment is slightly hole doped. Calculated tunnel magnetoresistance ratio for the favorable heterostructure configuration estimated within the Julliere model is 220%, which opens a way to use VTe2/graphene/VTe2 as prospective magnetic tunnel junction in novel spintronic nanodevices based on tunnel magnetic resistance and spin transfer torque effects.
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Вид документа : Статья из сборника (выпуск монографической серии)
Шифр издания :
Автор(ы) : Mikhaleva N. S., Visotin M. A., Popov Z. I.
Заглавие : Theoretical investigation of NiI2 based bilayer heterostructures
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials
Место публикации : Key Eng. Mater. - 2019. - Vol. 806 KEM. - P.10-16. - , DOI 10.4028/www.scientific.net/KEM.806.10
Примечания : Cited References: 38. - N. S. M. acknowledges the financial support of the RFBR project No. 16-32-60003 mol_a_dk.
Аннотация: The electronic structure of nickel iodide monolayer in NiI2/ScX2 (X = S, Se and Te) and NiI2/NiTe2 heterostructures was investigated by density functional theory (DFT). The spin-asymmetric semiconducting behavior of NiI2 monolayer in these interfaces was observed. The width of the band gap of the NiI2 monolayer practically does not change in heterostructures and remains at the level of 1.7 and 3.0 eV for minor and major spin channels, respectively. The NiI2 layer can be p-doped by stacking with ScX2 dichalcogenides. On the contrary, charge transfer (~0.01 |e| per f.u.) from NiTe2 leads to n-doping of NiI2. As a result, the Fermi level shifts up to the area of NiI2 conduction band with spin down carriers only, which gives prospects of using this material in spin filter applications. The electronic structure of NiI2/ScTe2 under isotropic deformation in the plane remains the same under tension and compression within 5%, except for a small change in the band gap in the composite layers of NiI2 within 25%. This allows one to conclude about the stability of the electronic properties under deformations, which gives possibility to use the heterostructures in flexible electronics devices. © 2019 Trans Tech Publications Ltd, Switzerland
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shtarev D. S., Shtareva A. V., Molokeev M. S., Syuy A. V., Nashchochin E. O.
Заглавие : About photocatalytic properties of some heterostructures based on strontium bismuthate
Коллективы : Asian School-Conference on Physics and Technology of Nanostructured Materials
Место публикации : Key Eng. Mater. - 2019. - Vol. 806 KEM. - P.161-166. - ISSN 10139826 (ISSN); 9783035715682 (ISBN), DOI 10.4028/www.scientific.net/KEM.806.161
Примечания : Cited References: 9. - The research was carried out at the expense of a grant from the Russian Science Foundation (project No. 17-73-00007).
Аннотация: In the work, some heterostructures consisting of two different strontium bismuthates from the following series are investigated: Sr2Bi2O5, Sr3Bi2O6 and Sr6Bi2O11. It is shown that the creation of such heterostructures affects both optical and photocatalytic properties. The results obtained are promising for the further development and research of new heterostructures based on two different strontium bismuthates and for studying the characteristics of their photocatalytic activity. © 2019 Trans Tech Publications Ltd, Switzerland
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Volochaev M. N., Granovsky A. B., Zhilova O. V., Kalinin Y. E., Ryl'kov V. V., Sumets M. P., Makagonov V. A., Pankov S. Y., Sitnikov A. V., Fadeev E., Lahderanta E., Foshin V.
Заглавие : Transport and magnetic phenomena in ZnO-С thin-film heterostructures
Место публикации : Superlattices Microstruct. - 2020. - Vol. 140. - Ст.106449. - ISSN 07496036 (ISSN), DOI 10.1016/j.spmi.2020.106449
Примечания : Cited References: 36. - The work was supported by the Ministry of Education and Science of Russia (project No. 3.1867.2017/4.6 ) and the RFBR (project No. 19-07-00471). The work was partially funded by the Academy of Finland
Аннотация: ZnO- and C-based heterostructures were fabricated by the layer-by-layer deposition technique using the ion-beam sputtering process. Structure, electrical and magnetic properties of fabricated heterostructures are discussed. The two-phase (ZnO and C) films are evolved into a multilayer structure, consisting of amorphous carbon and crystalline ZnO layers when the bilayer thickness increases. When carbon is added to ZnO, its electrical resistivity reduces. The conduction mechanism changes from the variable-range hopping in a narrow energy band to the nearest neighbors hopping in ZnO–C films with a thickness of h ˂ 150 nm. The temperature dependence of conductivity changes from the Arrhenius-like to logarithmic law, indicating that the strong charge localization turns into a weak one when the film thickness is about 150 nm. The negative magnetoresistance of up to 1% was detected at 77 K. The film ferromagnetism at the temperature of 10 K was not found.
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Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Tomilin F. N., Kozak V., Ivanova D., Fedorova N., Shubin A.
Заглавие : Structural and electronic properties of the heterostructures based on Me2AlC-phase predicted by quantum chemistry calculations
Коллективы : International workshop on functional MAX-materials, Kirensky Institute of Physics, Siberian Federal Univercity
Место публикации : International workshop on the properties of functional MAX-materials (2nd FunMax): book of abstracts/ org. com. M. Farle [et al.]. - 2021. - P.49
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Dorovskikh S. I., Klyamer D. D., Maksimovskiy E. A., Volchek V. V., Zharkov S. M., Morozova N. B., Basova T. V.
Заглавие : Heterostructures based on cobalt phthalocyanine films decorated with gold nanoparticles for the detection of low concentrations of ammonia and nitric oxide
Место публикации : Biosensors. - 2022. - Vol. 12, Is. 7. - Ст.476. - ISSN 20796374 (ISSN), DOI 10.3390/bios12070476
Примечания : Cited References: 74. - This work was funded by the Russian Science Foundation (grant 21-73-10142). The authors acknowledge the Russian Ministry of Education and Science (project 121031700314-5) for the access to literature search databases. TEM investigations were conducted in the SFU Joint Scientific Center
Аннотация: This work is aimed at the development of new heterostructures based on cobalt phthalocyanines (CoPc) and gold nanoparticles (AuNPs), and the evaluation of the prospects of their use to determine low concentrations of ammonia and nitric oxide. For this purpose, CoPc films were decorated with AuNPs by gas-phase methods (MOCVD and PVD) and drop-casting (DC), and their chemiresistive sensor response to low concentrations of NO (10–50 ppb) and NH3 (1–10 ppm) was investigated. A comparative analysis of the characteristics of heterostructures depending on the preparation methods was carried out. The composition, structure, and morphology of the resulting hybrid films were studied by X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma atomic emission (ICP-AES) spectroscopy, as well as electron microscopy methods to discuss the effect of these parameters on the sensor response of hybrid films to ammonia and nitric oxide. It was shown that regardless of the fabrication method, the response of Au/CoPc heterostructures to NH3 and NO gases increased with an increase in the concentration of gold. The sensor response of Au/CoPc heterostructures to NH3 increased 2–3.3 times compared to CoPc film, whereas in the case of NO it increased up to 16 times. The detection limits of the Au/CoPc heterostructure with a gold content of ca. 2.1 µg/cm2 for NH3 and NO were 0.1 ppm and 4 ppb, respectively. It was shown that Au/CoPc heterostructures can be used for the detection of NH3 in a gas mixture simulating exhaled air (N2—74%, O2—16%, H2O—6%, CO2—4%).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Bikbaev R. G., Vetrov S. Ya., Timofeev I. V.
Заглавие : Hyperbolic metamaterial for the Tamm plasmon polariton application
Коллективы : Russian Foundation for Basic ResearchRussian Foundation for Basic Research (RFBR) [18-32-00053, 19-42-240004, 19-52-52006]
Место публикации : J. Opt. Soc. Am. B. - 2020. - Vol. 37, Is. 8. - P.2215-2220. - ISSN 0740-3224, DOI 10.1364/JOSAB.394935. - ISSN 1520-8540(eISSN)
Примечания : Cited References: 51. - Russian Foundation for Basic Research (18-32-00053, 19-42-240004, 19-52-52006)
Предметные рубрики: PHOTONIC CRYSTAL
PERFECT ABSORBER
STATES
HETEROSTRUCTURES
Аннотация: The possibility of using a hyperbolic metamaterial to form conventional and epsilon-near-zero Tamm plasmon polaritons in the near-infrared and visible spectral ranges is demonstrated. The spectral properties of the hyperbolic metamaterial are investigated in the framework of the effective medium theory and confirmed by the transfer matrix method. It is found that at the oblique incidence of light onto a structure, the I-type hyperbolic metamaterial can be implemented, while II-type cannot. The sensitivity of the epsilon-near-zero wavelength to the variation in the angle of light incidence for TE and TM waves is demonstrated. It is shown that both the high-quality and broadband Tamm plasmon polaritons are excited in the investigated structures.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Nikolaeva N. S., Klyamer D. D., Zharkov S. M., Tsygankova A. R., Sukhikh A. S., Morozova N. B., Basova T. V.
Заглавие : Heterostructures based on Pd–Au nanoparticles and cobalt phthalocyanine for hydrogen chemiresistive sensors
Место публикации : Int. J. Hydrogen Energy. - 2021. - Vol. 46. Is. 37. - P.19682-19692. - ISSN 03603199 (ISSN), DOI 10.1016/j.ijhydene.2021.03.082
Примечания : Cited References: 74. - The work on the synthesis of Au MOCVD precursor and deposition of gold nanoparticles on various surfaces were funded by Russian Science Foundation (RSF) (research project № 20-15-00222 ). The TEM and electron diffraction investigations were conducted in the SFU Joint Scientific Center supported by the State assignment ( #FSRZ-2020-0011 ) of the Ministry of Science and Higher Education of the Russian Federation
Аннотация: In this work, the effect of Pd, Au and PdAu nanoparticles on sensor response of cobalt phthalocyanine films to hydrogen was studied. For this purpose, novel heterostructures based on cobalt phthalocyanine and PdAu nanoalloys were obtained by a combination of vacuum thermal evaporation and pulsed metalorganic chemical vapor deposition (MOCVD) and investigated as active layers for hydrogen detection. The structural features and phase composition of the prepared heterostructures were studied by the techniques of X-ray diffraction, transmission electron microscopy and electron diffraction. The concentration of metal nanoparticles in the samples was determined by inductively coupled plasma atomic emission spectroscopy (ICP-AES). The chemiresistive sensor response of CoPc/M (M = Pd, Au, Pd0.2Au0.8 and Pd0.8Au0.2) to hydrogen (100–400 ppm, room temperature) was compared with that of bare CoPc films. It was shown that the sensor response of the investigated heterostructures to hydrogen (300 ppm) increased in the order CoPc (0.2%) < CoPc/Pd0.2Au0.8 (1.9%) ~ CoPc/Au (2.2%) < CoPc/Pd (2.7%) < CoPc/Pd0.8Au0.2 (5.6%).
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10.

Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhilova O. V., Pankov S. Y., Sitnikov A. V., Kalinin Y. E., Volochaev M. N., Makagonov V. A.
Заглавие : Structure and electrophysical properties of thin-film SnO2–In2O3 heterostructures
Место публикации : J. Mater. Sci.: Mater. Electron. - 2019. - Vol. 30, Is. 13. - P.11859–11867. - ISSN 09574522 (ISSN) , DOI 10.1007/s10854-019-01503-w
Примечания : Cited References: 28. - The authors of the article want to express their gratitude to Professor S.A. Gridnev for helpful discussions. This work was supported by the Ministry of Education and Science in the framework of the state task (project No: 3.1867.2017/4.6).
Аннотация: The structure and electrical properties of In2O3 and SnO2 oxide semiconductors and heterostructures based on them has been experimentally investigated. The films were prepared by the method of layer-by-layer deposition using the ion-beam sputtering. The transition from the two-phase film of amorphous SnO2 and In2O3 islands, formed during the layer-by-layer deposition, to a multilayer structure consisting of the amorphous SnO2 and In2O3 continuous layers occurs with an increase in the bilayer thickness. The electrophysical properties of the (SnO2/In2O3)69 heterostructures are determined by the transition from the random distribution of SnO2 and In2O3 amorphous phases to a multilayer structure and the temperature range of measurement. For all studied systems, a consistent change in the prevailing mechanism of conductivity is observed at temperatures from 77 to 300 K. In (SnO2/In2O3)69 thin films with a bilayer thickness hbl ˂ 2.5 nm, change of the prevailing conduction mechanism takes place according to the next sequence: variable range hopping conduction over localized states near the Fermi level, hopping conduction over the nearest neighbors and hopping transfer of carriers excited into localized states near the band edges at temperatures close to room temperature.
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