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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Smolyakov D. A., Tarasov A. S., Bondarev M. A., Nikolskaya A. A., Vasiliev V. K., Volochaev M. N., Volkov N. V.
Заглавие : Admittance spectroscopy of dopants implanted in silicon and impurity state-induced AC magnetoresistance effect
Место публикации : Mater. Sci. Semicond. Process. - 2021. - Vol. 126. - Ст.105663. - ISSN 13698001 (ISSN), DOI 10.1016/j.mssp.2021.105663
Примечания : Cited References: 21. - This study was supported by the Government of the Russian Federation , Mega Grant for the Creation of Competitive World-Class Laboratories (Agreement no. 075-15-2019-1886)
Аннотация: A silicon structure doped with Ga using ion implantation has been investigated by admittance spectroscopy. It has been established that the presence of the Ga impurity, along with the B one, in the silicon structure leads to the appearance of the second peak in the temperature dependence of the real part of the impedance (admittance). Moreover, switching-on a magnetic field parallel to the sample plane shifts the singularities in the temperature curve to the high-temperature region. This results in the manifestation of both the positive and negative magnetoresistance effect upon temperature and magnetic field variation. It has been found by the standard admittance spectroscopy analysis of the impedance data that the energy structure of the investigated sample includes two interfacial energy levels ES1(0) = 42 meV and ES2(0) = 69.4 meV. As expected, these energies are consistent with the energies of B and Ga dopants. In a magnetic field, these levels increase by 3 meV for B and 2 meV for Ga, which induces the magnetoresistance effect. It has been demonstrated that the interfacial state-induced magnetoresistance effect can be tuned by ion implantation and dopant selection.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Gavrichkov V. A., Ovchinnikov S. G.
Заглавие : An impurity resistivity of doped manganese perovskites
Место публикации : Physica B: ELSEVIER SCIENCE BV, 1999. - Vol. 259-61: International Conference on Strongly Correlated Electron Systems (SCES 98) (JUL 15-18, 1998, PARIS, FRANCE). - P828-830. - ISSN 0921-4526, DOI 10.1016/S0921-4526(98)00875-8
Примечания : Cited References: 4
Предметные рубрики:
Ключевые слова (''Своб.индексиров.''): manganese perovskites--mobility--linear and quadratic magnetoresistance
Аннотация: We present a two-time of relaxation approach at an analysis of a magnetoresistance in ferromagnetic manganese perovskites La(1-x)(Ca,Sr)(x)MnO. To explain a change in the low-held response from predominantly quadratic dR/dH\(H--0) = 0 for T T(c) to linear dR/dH\(H--0) for T T(c) as noted in the measurements in thin films La(0.7)Ca(0.3)MnO(3) we calculated held and temperature dependences of a impurity contribution to a carrier mobility in a framework of the 2p(O)- and 3d(Mn)-scattering model elaborated for manganese perovskites. We obtained the field-dependent impurity contribution to the overall scattering of carriers that show a transition in the low-field (H) dependence of R from quadratic above T(c) to linear below consistent with an experiment. The calculated negative magnetoresistance ratio is sharply peaked at a temperature-near T(c) or below. (C) 1999 Elsevier Science B.V. All rights reserved.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : ALEKSEEV K. N., ALEKSEEVA N. V.
Заглавие : CHAOTIC DYNAMICS IN LIGHT IMPURITY CENTER INTERACTION
Разночтения заглавия :us: Chaotic dynamics in light-impurity center interaction
Место публикации : Phys. Lett. A: ELSEVIER SCIENCE BV, 1992. - Vol. 162, Is. 1. - P82-85. - ISSN 0375-9601, DOI 10.1016/0375-9601(92)90965-O
Примечания : Cited References: 26
Предметные рубрики: QUANTUM OPTICS
CRYSTALS
Аннотация: Interaction of an impurity center in crystal with light and crystal lattice vibrations is considered. Conditions of the transition to Hamiltonian chaos have been obtained for the case of strong and resonant electron-phonon coupling.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Togushova Yu. N., Dolgov, O., V
Заглавие : Decisive proofs of the s± → s++ transition in the temperature dependence of the magnetic penetration depth
Коллективы : Russian Foundation for Basic Research (RFBR)Russian Foundation for Basic Research (RFBR) [19-32-90109]; RFBRRussian Foundation for Basic Research (RFBR); Government of Krasnoyarsk Territory; Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' [19-42-240007]
Место публикации : Supercond. Sci. Technol. - 2021. - Vol. 34, Is. 7. - Ст.075008. - ISSN 0953-2048, DOI 10.1088/1361-6668/abff6f. - ISSN 1361-6668(eISSN)
Примечания : Cited References: 40. - We are grateful to D V Efremov, A S Fedorov, S G Ovchinnikov, E I Shneyder, D Torsello, and A N Yaresko for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (RFBR) Grant No. 19-32-90109 and by RFBR and Government of Krasnoyarsk Territory and Krasnoyarsk Regional Fund of Science to the Research Projects 'Electronic correlation effects and multiorbital physics in iron-based materials and cuprates' Grant No. 19-42-240007.
Предметные рубрики: ORDER-PARAMETER
IMPURITIES
SUPERCONDUCTORS
STATES
MODEL
Аннотация: One of the features of the unconventional s± state in iron-based superconductors is possibility to transform to the s++ state with the increase of the nonmagnetic disorder. Detection of such a transition would prove the existence of the s± state. Here we study the temperature dependence of the London magnetic penetration depth within the two-band model for the s± and s++ superconductors. By solving Eliashberg equations accounting for the spin-fluctuation mediated pairing and nonmagnetic impurities in the T-matrix approximation, we have derived a set of specific signatures of the s± → s++ transition: (1) sharp change in the behavior of the penetration depth λL as a function of the impurity scattering rate at low temperatures; (2) before the transition, the slope of ΔλL(T) = λL(T) - λL(0) increases as a function of temperature, and after the transition this value decreases; (3) the sharp jump in the inverse square of the penetration depth as a function of the impurity scattering rate, λL-2(Γa), at the transition; (4) change from the single-gap behavior in the vicinity of the transition to the two-gap behavior upon increase of the impurity scattering rate in the superfluid density ρs(T).
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Shestakov V. A., Korshunov M. M., Togushova Yu.N., Efremov D. V., Dolgov O. V.
Заглавие : Details of the disorder-induced transition between s± and s++ states in the two-band model for Fe-based superconductors
Коллективы : Russian Foundation for Basic Research [16-02-00098]; Government Support of the Leading Scientific Schools of the Russian Federation [NSh-7559.2016.2]; 'BASIS' Foundation for Development of Theoretical Physics and Mathematics
Место публикации : Supercond. Sci. Technol. - 2018. - Vol. 31, Is. 3. - Ст.034001. - ISSN 0953-2048, DOI 10.1088/1361-6668/aaa501. - ISSN 1361-6668(eISSN)
Примечания : Cited References:62. - We are grateful to P D Grigor'ev and M V Sadovskii for useful discussions. This work was supported in part by the Russian Foundation for Basic Research (grant 16-02-00098) and Government Support of the Leading Scientific Schools of the Russian Federation (NSh-7559.2016.2). MMK and VAS acknowledge the support of the 'BASIS' Foundation for Development of Theoretical Physics and Mathematics.
Предметные рубрики: IRON-BASED SUPERCONDUCTORS
HIGH-TEMPERATURE SUPERCONDUCTIVITY
PAIRING
Ключевые слова (''Своб.индексиров.''): unconventional superconductors--iron pnictides--iron chalcogenides--impurity scattering
Аннотация: IIrradiation of superconductors with different particles is one of many ways to investigate the effects of disorder. Here we study the disorder-induced transition between s ± and s ++ states in the two-band model for Fe-based superconductors with nonmagnetic impurities. Specifically, we investigate the important question of whether the superconducting gaps during the transition change smoothly or abruptly. We show that the behavior can be of either type and is controlled by the ratio of intraband to interband impurity scattering potentials, and by a parameter σ, that represents scattering strength and ranges from zero (Born approximation) to one (unitary limit). For the pure interband scattering potential and the scattering strength σ ≲ 0.11, the s ± → s ++ transition is accompanied by steep changes in the gaps, while for larger values of σ, the gaps change smoothly. The behavior of the gaps is characterized by steep changes at low temperatures, T˂ 0.1Tc0 with Tc0 being the critical temperature in the clean limit, otherwise it changes gradually. The critical temperature Tc is always a smooth function of the scattering rate in spite of the steep changes in the behavior of the gaps.
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Вид документа : Однотомное издание (Препринт)
Шифр издания :
Автор(ы) : Alekseev K. N., Berman G. P.
Заглавие : Dynamic chaos in the interaction between light and impurity centers in a crystal : препринт. № 598Ф
Выходные данные : Красноярск: ИФ СО АН СССР, 1989
Колич.характеристики :8 с
Коллективы : Академия наук СССР, Сибирское отделение АН СССР, Институт физики им. Л.В. Киренского Сибирского отделения АН СССР
Примечания : Библиогр. :
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Zhandun V. S., Zamkova N. G., Zinenko V. I.
Заглавие : Effect of an Eu3+ impurity on the antiferrodistortion and ferroelectric instabilities in an EuTiO3 bulk crystal and thin films
Коллективы : Russian Foundation for Basic Research [12-02-00025-a], Russian Federation [NSh-924.2014.2]
Место публикации : J. Exp. Theor. Phys.: MAIK Nauka-Interperiodica / Springer, 2015. - Vol. 120, Is. 1. - P.103-109. - ISSN 1063, DOI 10.1134/S1063776115010070. - ISSN 10906509(eISSN)
Примечания : Cited References:21. - This work was supported by the Russian Foundation for Basic Research (project no. 12-02-00025-a) and the program Leading Scientific Schools of the President of the Russian Federation (project no. NSh-924.2014.2).
Предметные рубрики: PEROVSKITES
Аннотация: The existence of an antiferrodistortion transition in EuTiO3 is disputable, and this question needs to be answered. One of the possible causes is the presence of an Eu3+ impurity in a sample. A nonempirical polarizable ion model is used to study the effect of a trivalent Eu3+ ion impurity on the antiferrodistortion and ferroelectric instabilities of an EuTiO3 crystal in the bulk and the thin-film states. Lattice dynamics calculation shows that a bulk impurity-free EuTiO3 crystal has no unstable modes throughout the entire phase space volume. The addition of an Eu3+ impurity leads to a significant softening of the rotational mode, the distortion in which makes tetragonal phase I4/mcm (which is experimentally observed) energetically favorable. In going from the bulk crystal to the thin film, the vibration spectrum of the impurity-free film has unstable antiferrodistortion and rotational modes. The addition of an Eu3+ impurity enhances the antiferrodistortion instability, which fully or partly suppresses ferroelectricity.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : Patrin G. S., Beletskii V. V., Velikanov D. A., Volkov N. V., Yurkin G. Yu.
Заглавие : Effect of cobalt impurity ions on the magnetic and electrical properties of iron monosilicide crystals
Место публикации : J. Exp. Theor. Phys.: MAIK NAUKA/INTERPERIODICA/SPRINGER, 2011. - Vol. 112, Is. 2. - P303-309. - ISSN 1063-7761, DOI 10.1134/S1063776111010146
Примечания : Cited References: 23
Предметные рубрики: GAP FORMATION
FESI
Ключевые слова (''Своб.индексиров.''): concentration dependence--electrical property--energy structures--experimental data--experimental investigations--field dependence--impurity ions--kondo models--magnetic and electrical properties--si crystals--cobalt--crystal impurities--crystals--magnetic susceptibility--electric properties
Аннотация: The results of experimental investigations of Fe1 - x Co (x) Si crystals in the impurity limit with x = 0.001, 0.005, and 0.01 are reported. The temperature and field dependences of the magnetic susceptibility have been studied. According to the experimental data, the introduction of cobalt impurity leads to a change in the energy structure, which is most pronounced in a change in the electrical properties. The temperature, field, and concentration dependences of the resistivity have been measured. The results have been interpreted in the framework of the Kondo model.
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Вид документа : Статья из журнала
Шифр издания :
Автор(ы) : SANDALOV I. S., YERUKHIMOV M. S.
Заглавие : EFFECT OF MIXING THE STATES OF CONDUCTIVITY ELECTRONS AND IMPURITY D(F) IONS ON ELECTRIC-CONDUCTIVITY
Место публикации : Zhurnal Eksperimentalnoi Teor. Fiz.: MEZHDUNARODNAYA KNIGA, 1982. - Vol. 82, Is. 1. - P246-253. - ISSN 0044-4510
Примечания : Cited References: 17
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10.

Вид документа : Статья из сборника (однотомник)
Шифр издания :
Автор(ы) : Val'kov V. V., Aksenov S. V., Ulanov E. A.
Заглавие : Effect of multiple scattering on the quantum transport of electrons through a magnetic impurity with a single-ion anisotropy : abstract
Коллективы : Российская академия наук, Физико-технический институт им. А.Ф. Иоффе РАН, "Spin Waves", International Symposium
Место публикации : Spin Waves 2013, Int. Symp.: Program. Abstracts. - СПб., 2013. - P.75. - ISBN 978-5-91918-334-1
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